公开(公告)号：US20210050190A1

公开(公告)日：2021-02-18

申请号：US16990294

申请日：2020-08-11

Applicant: Tokyo Electron Limited

Inventor： Kazuyuki MIURA ,  Norihiko AMIKURA

IPC: H01J37/32

Abstract: A substrate processing method is provided. In the method, a process gas is supplied into a chamber. A pressure in the chamber is controlled to a first pressure by evacuating the chamber via a first exhaust line. Then, the pressure in the chamber is controlled to a second pressure that is higher than the first pressure by evacuating the chamber via a second exhaust line while closing the first exhaust line. Next, the pressure in the chamber is controlled to the first pressure by evacuating the chamber via the first exhaust line while closing the second exhaust line.

公开(公告)号：US20180299908A1

公开(公告)日：2018-10-18

申请号：US15954973

申请日：2018-04-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Norihiko AMIKURA ,  Risako MIYOSHI

IPC: G05D7/01 ,  H01L21/67

Abstract: A method of obtaining the output flow rate of the flow rate controller according to an aspect is provided. The method including a first step of outputting gas whose flow rate is adjusted according to a designated set flow rate from the flow rate controller, in a state where the diaphragm mechanism is opened; a second step of adjusting the diaphragm mechanism so that the pressure in the second pipe is the target pressure value, in a state where the output of gas from the flow rate controller is continued in the first step; and a third step of obtaining the output flow rate of the flow rate controller by using a pressure value and a temperature value in the tank, after the pressure in the second pipe is set to the target pressure value in the second step.

公开(公告)号：US20180122620A1

公开(公告)日：2018-05-03

申请号：US15854066

申请日：2017-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Norihiko AMIKURA ,  Norikazu SASAKI ,  Atsushi SAWACHI

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

Abstract: Processing gases respectively supplied from multiple gas supply lines into a processing vessel can be switched at a high speed in a uniform manner. A plasma processing apparatus includes the processing vessel configured to perform therein a plasma process to a target substrate; and a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable. Further, the first gas discharge holes and the second gas discharge holes independently and respectively introduce a first processing gas and a second processing gas, which are respectively supplied from the first gas supply line and the second gas supply line and used in the plasma process, into the processing vessel. Both of the first gas discharge holes and the second gas discharge holes are arranged on a same line extended from a center of the gas inlet member toward a periphery of the gas inlet member along a diameter direction of the gas inlet member.

公开(公告)号：US20180073911A1

公开(公告)日：2018-03-15

申请号：US15702824

申请日：2017-09-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Norihiko AMIKURA ,  Risako MIYOSHI

IPC: G01F25/00 ,  G01F13/00

Abstract: A method according to an aspect includes a first step of connecting a reference device to the other end of a connecting pipe, a second step of supplying a gas from one flow controller into piping, a third step of acquiring measured values of a first pressure gauge and a first thermometer, a fourth step of supplying a portion of the gas in piping into a tank, a fifth step of acquiring measured values of the first pressure gauge and the first thermometer or measured values of a second pressure gauge and a second thermometer, and a sixth step of using a Boyle-Charles' law to calculate a volume of the piping on the basis of the measured values acquired in the third step, the measured values acquired in the fifth step, and a volume of a closed space including a space in the tank when the third valve is closed.

公开(公告)号：US20160299514A1

公开(公告)日：2016-10-13

申请号：US15080692

申请日：2016-03-25

Applicant: Tokyo Electron Limited

Inventor： Kumiko ONO ,  Hiroshi TSUJIMOTO ,  Atsushi SAWACHI ,  Norihiko AMIKURA ,  Norikazu SASAKI ,  Yoshitaka KAWAGUCHI

IPC: G05D16/20

CPC classification number: G05D7/0647

Abstract: A gas supply control method uses a pressure control flowmeter and first and second valves provided upstream and downstream, respectively, of the pressure control flowmeter in a gas supply line. The pressure control flowmeter includes a control valve and an orifice. The gas supply control method includes maintaining a pressure P1 of a first gas supply pipe between the orifice and the control valve and a pressure P2 of a second gas supply pipe between the orifice and the second valve so as to satisfy P1>2×P2. The supply of gas is controlled by controlling the opening and closing of the second valve with the first valve being open and the control valve being controlled. A volume V1 of the first gas supply pipe and a volume V2 of the second gas supply pipe have a relationship of V1/V2≧9.

Abstract translation: 气体供给控制方法使用压力控制用流量计和分别设置在气体供给管路中的压力控制用流量计的上游和下游的第一阀和第二阀。 压力控制流量计包括控制阀和孔。 气体供给控制方法包括：保持孔和控制阀之间的第一气体供给管的压力P1和孔与第二阀之间的第二气体供给管的压力P2，以满足P1> 2×P2。 通过控制第一阀打开并控制控制阀来控制第二阀的打开和关闭来控制气体供应。 第一气体供给管的体积V1和第二气体供给管的体积V2具有V1 /V2≥9的关系。

公开(公告)号：US20140203702A1

公开(公告)日：2014-07-24

申请号：US14161893

申请日：2014-01-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Norihiko AMIKURA ,  Risako MIYOSHI

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32091

Abstract: Disclosed is a plasma processing apparatus including a mounting table within a processing container. The mounting table includes a lower electrode. A shower head constituting an upper electrode is provided above the mounting table. A gas inlet tube is provided above the shower head. The shower head includes a plurality of downwardly opened gas ejection holes, and first and second separate gas diffusion chambers on the gas ejection holes. The first gas diffusion chamber extends along a central axis that passes through a center of the mounting table. The second gas diffusion chamber extends circumferentially around the first gas diffusion chamber. The gas inlet tube includes a cylindrical first tube wall and a cylindrical second tube wall provided outside the first tube wall, and defines a first gas inlet path inside the first tube wall, and a second gas inlet path between the first and second tube walls.

Abstract translation: 公开了一种等离子体处理装置，其包括处理容器内的安装台。 安装台包括下电极。 构成上电极的花洒头设置在安装台的上方。 在淋浴喷头上方设有进气管。 喷淋头包括多个向下打开的气体喷射孔，以及气体喷射孔上的第一和第二分离的气体扩散室。 第一气体扩散室沿着穿过安装台的中心的中心轴线延伸。 第二气体扩散室围绕第一气体扩散室周向延伸。 气体入口管包括圆柱形第一管壁和设置在第一管壁外侧的圆柱形第二管壁，并且限定第一管壁内部的第一气体入口路径和在第一和第二管壁之间的第二气体入口路径。