公开(公告)号：US20150330631A1

公开(公告)日：2015-11-19

申请号：US14699102

申请日：2015-04-29

Applicant: Tokyo Electron Limited

Inventor： Norihiko AMIKURA ,  Norikazu SASAKI ,  Risako MIYOSHI

IPC: F23N5/24 ,  G01N25/54

CPC classification number: F23N5/24 ,  F23M11/00 ,  F23M2900/11021 ,  G01N25/54 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605 ,  Y10T137/0346

Abstract: Disclosed is a plasma processing apparatus in which a main control unit is capable of managing the processing situation of an exhaust gas in an exhaust gas processing unit through a dilution controller. The exhaust gas processing unit includes a detoxifying device connected to the outlet of a vacuum pump through an exhaust pipe, a dilution gas source connected to the exhaust pipe near the outlet of the vacuum pump through a dilution gas supply pipe, an MFC and an opening/closing valve installed at the middle of the dilution gas supply pipe, a gas sensor attached to the exhaust pipe on the downstream side of an end (node N) of the dilution gas supply pipe, and a dilution controller configured to control the MFC.

Abstract translation: 公开了一种等离子体处理装置，其中主控制单元能够通过稀释控制器管理废气处理单元中的废气的处理情况。 废气处理单元包括通过排气管连接到真空泵出口的解毒装置，通过稀释气体供给管，MFC和开口连接到靠近真空泵出口的排气管的稀释气体源 安装在稀释气体供给管的中间的气体传感器，附着在稀释气体供给管的端部（节点N）的下游侧的排气管的气体传感器，以及配置为控制MFC的稀释控制器。

公开(公告)号：US20150206713A1

公开(公告)日：2015-07-23

申请号：US14600224

申请日：2015-01-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Norihiko AMIKURA ,  Norikazu SASAKI ,  Atsushi SAWACHI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

Abstract: Processing gases respectively supplied from multiple gas supply lines into a processing vessel can be switched at a high speed in a uniform manner. A plasma processing apparatus includes the processing vessel configured to perform therein a plasma process to a target substrate; and a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable. Further, the first gas discharge holes and the second gas discharge holes independently and respectively introduce a first processing gas and a second processing gas, which are respectively supplied from the first gas supply line and the second gas supply line and used in the plasma process, into the processing vessel.

Abstract translation: 分别从多个气体供给管路供给到处理容器中的处理气体可以以均匀的方式高速地切换。 等离子体处理装置包括：处理容器，被配置为在目标衬底中执行等离子体处理; 以及包括第一气体排出孔和第二气体排出孔的气体入口构件，所述第一气体排出孔和第二气体排出孔彼此相邻配置并分别与可切换的第一气体供给管线和第二气体供给管路连通。 此外，第一气体排出孔和第二气体排出孔独立地分别引入从第一气体供给管线和第二气体供给管线分别供给并用于等离子体处理的第一处理气体和第二处理气体， 进入处理容器。

公开(公告)号：US20180122620A1

公开(公告)日：2018-05-03

申请号：US15854066

申请日：2017-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Norihiko AMIKURA ,  Norikazu SASAKI ,  Atsushi SAWACHI

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

Abstract: Processing gases respectively supplied from multiple gas supply lines into a processing vessel can be switched at a high speed in a uniform manner. A plasma processing apparatus includes the processing vessel configured to perform therein a plasma process to a target substrate; and a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable. Further, the first gas discharge holes and the second gas discharge holes independently and respectively introduce a first processing gas and a second processing gas, which are respectively supplied from the first gas supply line and the second gas supply line and used in the plasma process, into the processing vessel. Both of the first gas discharge holes and the second gas discharge holes are arranged on a same line extended from a center of the gas inlet member toward a periphery of the gas inlet member along a diameter direction of the gas inlet member.

公开(公告)号：US20160299514A1

公开(公告)日：2016-10-13

申请号：US15080692

申请日：2016-03-25

Applicant: Tokyo Electron Limited

Inventor： Kumiko ONO ,  Hiroshi TSUJIMOTO ,  Atsushi SAWACHI ,  Norihiko AMIKURA ,  Norikazu SASAKI ,  Yoshitaka KAWAGUCHI

IPC: G05D16/20

CPC classification number: G05D7/0647

Abstract: A gas supply control method uses a pressure control flowmeter and first and second valves provided upstream and downstream, respectively, of the pressure control flowmeter in a gas supply line. The pressure control flowmeter includes a control valve and an orifice. The gas supply control method includes maintaining a pressure P1 of a first gas supply pipe between the orifice and the control valve and a pressure P2 of a second gas supply pipe between the orifice and the second valve so as to satisfy P1>2×P2. The supply of gas is controlled by controlling the opening and closing of the second valve with the first valve being open and the control valve being controlled. A volume V1 of the first gas supply pipe and a volume V2 of the second gas supply pipe have a relationship of V1/V2≧9.

Abstract translation: 气体供给控制方法使用压力控制用流量计和分别设置在气体供给管路中的压力控制用流量计的上游和下游的第一阀和第二阀。 压力控制流量计包括控制阀和孔。 气体供给控制方法包括：保持孔和控制阀之间的第一气体供给管的压力P1和孔与第二阀之间的第二气体供给管的压力P2，以满足P1> 2×P2。 通过控制第一阀打开并控制控制阀来控制第二阀的打开和关闭来控制气体供应。 第一气体供给管的体积V1和第二气体供给管的体积V2具有V1 /V2≥9的关系。

公开(公告)号：US20150000707A1

公开(公告)日：2015-01-01

申请号：US14311640

申请日：2014-06-23

Applicant: Tokyo Electron Limited

Inventor： Eiji TAKAHASHI ,  Norikazu SASAKI ,  Atsushi SAWACHI

IPC: H01J37/32

CPC classification number: H01J37/32862 ,  H01J37/32449 ,  H01J37/32853 ,  Y10T137/2574

Abstract: A method for cleaning a process chamber of a processing apparatus including the process chamber and a gas supply mechanism. The gas supply mechanism includes a flow splitter, a first flow path communicating with an upstream end of the flow splitter, a first valve provided in the first flow path, a second flow path communicating with a downstream end of the flow splitter and connected to the process chamber, a second valve provided in the second flow path, a bypass flow path connecting the first flow path and the second flow path, and a bypass valve provided in the bypass flow path. The method includes a step of closing the first valve and the second valve and opening the bypass valve, and a step of cleaning the process chamber by introducing a gas through the bypass flow path into the process chamber after opening the bypass valve.

Abstract translation: 一种用于清洁包括处理室和气体供应机构的处理设备的处理室的方法。 气体供给机构包括分流器，与分流器的上游端连通的第一流路，设置在第一流路中的第一阀，与流量分配器的下游端连通的第二流路， 处理室，设置在第二流路中的第二阀，连接第一流路和第二流路的旁通流路，以及设置在旁通流路中的旁通阀。 该方法包括关闭第一阀和第二阀并打开旁通阀的步骤，以及通过在打开旁通阀之后通过旁路流动路径将气体引入处理室来清洁处理室的步骤。