公开(公告)号：US06329643B1

公开(公告)日：2001-12-11

申请号：US09653460

申请日：2000-08-31

申请人： Fujio Suzuki ,  Koichi Sakamoto ,  Wenling Wang ,  Moyuru Yasuhara

发明人： Fujio Suzuki ,  Koichi Sakamoto ,  Wenling Wang ,  Moyuru Yasuhara

IPC分类号： H05B102

CPC分类号： H01L21/67253 ,  C30B25/10 ,  C30B31/12 ,  F27D19/00 ,  H01L21/67248

摘要： A second vertical heat treating apparatus is temperature-calibrated based on a heat treatment result obtained by a first vertical heat treating apparatus for reference. First, temperature measurement wafers is heated in the first apparatus to obtain set values of temperature controllers for a target value of temperature. Then, wafers are subjected to an oxidizing process in the first apparatus by using these set values to form an oxide film. The thickness of the oxide film is measured and recorded as a reference film thickness. Then, wafers are subjected to an oxidizing process in a second apparatus at temperatures near the target value to form an oxide film. The thickness of the oxide film is measured, and difference in thickness between the oxide film formed in the second apparatus and the reference film thickness is obtained. The oxidizing process in the second apparatus is repeated to obtain set values of temperature controllers for the second apparatus at the time when the difference in film thickness becomes zero. The second apparatus is temperature-calibrated on the basis of the set value thus obtained.

摘要翻译： 基于由第一垂直热处理装置获得的热处理结果进行参考的第二垂直热处理装置进行温度校准。 首先，在第一装置中加热温度测量晶片，以获得目标温度值的温度控制器的设定值。 然后，通过使用这些设定值在第一装置中对晶片进行氧化处理，形成氧化膜。 氧化膜的厚度被测量并记录为参考膜厚度。 然后，在靠近目标值的温度下，在第二装置中对晶片进行氧化处理，以形成氧化膜。 测量氧化膜的厚度，并且获得在第二装置中形成的氧化膜之间的厚度差和参考膜厚度。 重复第二装置中的氧化处理，以获得当膜厚度差为零时第二装置的温度控制器的设定值。 基于由此获得的设定值对第二装置进行温度校准。

公开(公告)号：US06262641B1

公开(公告)日：2001-07-17

申请号：US09326202

申请日：1999-06-04

申请人： Takatoshi Kato ,  Koichi Sakamoto ,  Atsushi Saitoh

发明人： Takatoshi Kato ,  Koichi Sakamoto ,  Atsushi Saitoh

IPC分类号： H03H738

CPC分类号： H03B19/14

摘要： In a dielectric transmission line device and a radio device using a dielectric transmission line device, an output matching circuit is constructed in a simplified fashion and an output signal of a frequency multiplier is output via a dielectric transmission line. The frequency multiplier is constructed in a small form in the dielectric transmission line device so as to obtain a dielectric transmission line device with a small total size and also obtain a small-sized high-efficiency radio device using such a dielectric transmission line device as a transmission line for transmitting a transmission signal. An input matching circuit is disposed between an input terminal and an FET for generating a harmonic. An open-ended transmission line is also provided which is coupled with an electromagnetic field of a dielectric transmission line in the form of a dielectric strip.

摘要翻译： 在介质传输线装置和使用电介质传输线装置的无线电装置中，以简化的方式构成输出匹配电路，经由介质传输线输出倍频器的输出信号。 在介质传输线路器件中以倍频器的形式构造倍频器，以获得总体尺寸小的介质传输线路器件，并且还可以获得使用这样的介质传输线路器件的小型高效无线电设备 用于发送发送信号的传输线。 输入匹配电路设置在输入端子和用于产生谐波的FET之间。 还提供了开口传输线，其与介质条形式的电介质传输线的电磁场耦合。

公开(公告)号：US06175335B1

公开(公告)日：2001-01-16

申请号：US09342582

申请日：1999-06-29

申请人： Yohei Ishikawa ,  Koichi Sakamoto ,  Hideaki Yamada ,  Fuminori Nakamura

发明人： Yohei Ishikawa ,  Koichi Sakamoto ,  Hideaki Yamada ,  Fuminori Nakamura

IPC分类号： H01Q102

CPC分类号： H01Q15/08 ,  G01S2013/9389 ,  H01Q1/02

摘要： A dielectric lens antenna having a lens comprising a dielectric material and a heating body disposed on a surface of the lens. The dielectric lens antenna has a snow-melting function, which prevents degradation in lens-efficiency.

摘要翻译： 一种电介质透镜天线，具有透镜，该透镜包括设置在透镜表面上的电介质材料和加热体。 介电透镜天线具有融雪功能，防止透镜效率降低。

公开(公告)号：US6087912A

公开(公告)日：2000-07-11

申请号：US060190

申请日：1998-04-14

申请人： Koichi Sakamoto ,  Kenichi Iio ,  Sadao Yamashita ,  Yohei Ishikawa

发明人： Koichi Sakamoto ,  Kenichi Iio ,  Sadao Yamashita ,  Yohei Ishikawa

IPC分类号： H01L23/12 ,  H01L23/66 ,  H01L25/04 ,  H01L25/18 ,  H01P1/00 ,  H01P1/30 ,  H01P5/08 ,  H01P7/10 ,  H03B5/18 ,  H05K1/02 ,  H05K1/18

CPC分类号： H01L23/66 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12034 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19041 ,  H05K1/0237 ,  H05K1/183

摘要： An electronic module, comprising: a dielectric base plate having first and second opposing surfaces on which respective electrodes are disposed such that respective areas at the first and second surfaces are free of electrode material and aligned relative to one another to form a dielectric resonator; a first electronic component coupled to the base plate; and a first circuit sheet having first and second opposing surfaces, at least one aperture between the surfaces, and a conductor pattern disposed on the first surface, the first circuit sheet being disposed on the base plate such that: (i) the first electronic component is at least partially received within the aperture; and (ii) at least part of the conductor pattern is coupled to the dielectric resonator.

摘要翻译： 一种电子模块，包括：具有第一和第二相对表面的介电基板，各相应的电极设置在其上，使得第一表面和第二表面处的相应区域不含电极材料并相对于彼此对准以形成介质谐振器; 耦合到所述基板的第一电子部件; 以及第一电路板，其具有第一和第二相对表面，所述表面之间的至少一个孔和布置在所述第一表面上的导体图案，所述第一电路板设置在所述基板上，使得：（i）所述第一电子部件 至少部分地接收在所述孔内; 和（ii）至少部分导体图案耦合到介质谐振器。

公开(公告)号：US5982032A

公开(公告)日：1999-11-09

申请号：US905151

申请日：1997-08-01

申请人： Yohei Ishikawa ,  Koichi Sakamoto ,  Hiroaki Tanaka

发明人： Yohei Ishikawa ,  Koichi Sakamoto ,  Hiroaki Tanaka

IPC分类号： H01L25/18 ,  H01L21/8232 ,  H01L25/04 ,  H01L25/16 ,  H01L27/06 ,  H01L27/095 ,  H01P5/08 ,  H03H9/05 ,  H01L23/34

CPC分类号： H03H9/0542 ,  H01L25/16 ,  H01L2224/48137 ,  H01L2924/01068 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19011

摘要： An electronic device includes one or more GaAs integrated circuits having a plurality of mutually independent field-effect transistors formed on a GaAs base-member; and one or more high-dielectric-constant base-members including a passive element on a surface thereof or therein.

摘要翻译： 一种电子器件包括一个或多个GaAs集成电路，其具有形成在GaAs基底上的多个相互独立的场效应晶体管; 以及包括其表面上或其中的无源元件的一个或多个高介电常数基体元件。

公开(公告)号：US5867707A

公开(公告)日：1999-02-02

申请号：US823071

申请日：1997-03-24

申请人： Munechika Nishida ,  Koichi Sakamoto ,  Akefumi Kumeta ,  Yuzuru Tanaka

发明人： Munechika Nishida ,  Koichi Sakamoto ,  Akefumi Kumeta ,  Yuzuru Tanaka

IPC分类号： G06F9/06 ,  G06F9/40 ,  G06F9/44

CPC分类号： G06F9/4428

摘要： To permit a user to produce application programs easily, a plurality of object names and objects linkage information is specified as external specification data, the plurality of objects are related to each other based on linkage information stored in an objects linkage information storage, transmission and reception of data between the plurality of objects are controlled, and processes in which the plurality of objects constituting the application program are linked are executed.

摘要翻译： 为了容易地使用户生成应用程序，将多个对象名称和对象链接信息指定为外部指定数据，基于存储在对象链接信息存储，发送和接收中的链接信息，多个对象彼此相关 控制多个对象之间的数据，并且执行其中构成应用程序的多个对象链接的处理。

公开(公告)号：US5686753A

公开(公告)日：1997-11-11

申请号：US777570

申请日：1996-12-31

申请人： Tomoyasu Miyata ,  Koichi Sakamoto ,  Katsutoshi Toyama ,  Masaaki Sueyoshi

发明人： Tomoyasu Miyata ,  Koichi Sakamoto ,  Katsutoshi Toyama ,  Masaaki Sueyoshi

IPC分类号： H01L29/06 ,  H01L29/872 ,  H01L29/74 ,  H01L27/095 ,  H01L29/47

CPC分类号： H01L29/872 ,  H01L29/0661

摘要： In a Schottky barrier diode, concentration of an electrical field at an edge of an insulation layer is suppressed to improve the reverse breakdown voltage. An n- layer of a compound semiconductor substrate having an n+ layer and the n- layer is configured in the form of a mesa. An insulation layer is formed on at least a skirt portion and a slant portion of the mesa. An anode is formed on the insulation layer and n- layer, and a cathode is formed on the n+ layer. Thus, concentration of an electrical field at an edge of the insulation layer is canceled at least in part by an electrical field generated at the anode on the slant portion to improve the reverse breakdown voltage.

摘要翻译： 在肖特基势垒二极管中，抑制了绝缘层边缘处的电场浓度，以提高反向击穿电压。 具有n +层和n层的化合物半导体衬底的n-层被配置为台面的形式。 绝缘层形成在台面的至少裙部和倾斜部分上。 在绝缘层和n层上形成阳极，在n +层上形成阴极。 因此，至少部分地通过在倾斜部分上的阳极产生的电场抵消在绝缘层的边缘处的电场的集中，以提高反向击穿电压。

公开(公告)号：US5495895A

公开(公告)日：1996-03-05

申请号：US263668

申请日：1994-06-22

申请人： Koichi Sakamoto

发明人： Koichi Sakamoto

IPC分类号： A01B45/02

CPC分类号： A01B45/023

摘要： A tine device for a soil conditioning aeration machine capable of replacing a tine with another in a simple motion. The tine is mounted onto a driving portion through a coupler having an internal member. The internal member has a body portion capable of being inserted into the tine and the coupler retains the inserted tine through movable steel balls. The steel balls are freed by pushing an outer cylinder of the coupler against the force of a coiled spring so that the tine may be removed/mounted in a simple motion.

摘要翻译： 一种用于土壤调理曝气机的齿装置，能够以简单的运动将另一种齿替代。 齿通过具有内部构件的联接器安装在驱动部分上。 内部构件具有能够插入齿中的主体部分，并且联接器通过可移动的钢球保持插入的齿。 通过按照螺旋弹簧的力推动联接器的外圆筒来释放钢珠，使得齿可以以简单的运动被移除/安装。

公开(公告)号：US08634657B2

公开(公告)日：2014-01-21

申请号：US13074426

申请日：2011-03-29

申请人： Koichi Sakamoto

发明人： Koichi Sakamoto

IPC分类号： G06K9/62

CPC分类号： H04N5/23245 ,  H04N5/23219 ,  H04N5/23222

摘要： An image processing device includes: a first arithmetic operation unit that individually calculates an evaluation value based upon first factors, in correspondence to each of a plurality of images included in an image batch input thereto; an exclusion unit that executes exclusion processing based upon calculation results provided by the first arithmetic operation unit so as to exclude an image, the calculation results for which satisfy a predetermined condition, from the image batch; a second arithmetic operation unit that individually calculates an evaluation value based upon second factors, which include a factor different from the first factors, in correspondence to each image in the image batch having undergone the exclusion processing; and an evaluation processing unit that ranks individual images in the image batch having undergone the exclusion processing based upon calculation results provided by the second arithmetic operation unit.

摘要翻译： 一种图像处理装置包括：第一算术运算单元，其对应于包括在输入到其中的图像批次中的多个图像中的每一个，基于第一因素单独计算评估值; 排除单元，其基于由所述第一算术运算单元提供的计算结果执行排除处理，以从所述图像批中排除其计算结果满足预定条件的图像; 第二算术运算单元，对应于经过排除处理的图像批次中的每个图像，基于第二因子单独地计算评估值，所述第二因子包括与第一因子不同的因子; 以及评估处理单元，其基于由第二算术运算单元提供的计算结果，对经过排除处理的图像批次中的各个图像进行排序。

公开(公告)号：US08153451B2

公开(公告)日：2012-04-10

申请号：US11626752

申请日：2007-01-24

申请人： Koichi Sakamoto ,  Yamato Tonegawa ,  Takehiko Fujita

发明人： Koichi Sakamoto ,  Yamato Tonegawa ,  Takehiko Fujita

IPC分类号： H01L21/66

CPC分类号： H01L21/67259 ,  H01L21/67253 ,  H01L21/68 ,  H01L22/20 ,  Y10S414/135 ,  Y10S414/136

摘要： A semiconductor process system (10) includes a measuring section (40), an information processing section (51), and a control section (52). The measuring section (40) measures a characteristic of a test target film formed on a target substrate (W) by a semiconductor process. The information processing section (51) calculates a positional correction amount of the target substrate (W) necessary for improving planar uniformity of the characteristic, based on values of the characteristic measured by the measuring section (40) at a plurality of positions on the test target film. The control section (52) controls a drive section (30A, 32A) of a transfer device (30), based on the positional correction amount, when the transfer device (30) transfers a next target substrate (W) to the support member (17) to perform the semiconductor process.

摘要翻译： 半导体处理系统（10）包括测量部分（40），信息处理部分（51）和控制部分（52）。 测量部分（40）通过半导体工艺测量在目标衬底（W）上形成的测试目标膜的特性。 信息处理部（51）基于在测试时的多个位置上由测量部（40）测量的特性的值来计算提高特性的平面均匀性所需的目标基板（W）的位置修正量 目标电影。 当传送装置（30）将下一个目标基板（W）传送到支撑部件（30）时，控制部分（52）基于位置校正量来控制传送装置（30）的驱动部分（30A，32A） 17）进行半导体处理。