摘要:
A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, and (v) a step of developing the resist coating.
摘要:
A positive resist composition comprising: (A) a resin showing an increase in the solubility in an alkali developer by the action of an acid; (B) a compound being capable of generating an acid when irradiated with an actinic ray or a radiation; (C) a resin having a silicon-containing repeating unit of a specific structure and being stable to acids but insoluble in an alkali developer; and (D) a solvent; and a pattern making method using the same.
摘要:
A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (C) a resin having at least one repeating unit selected from fluorine atom-containing repeating units represented by the following formulae (1-1), (1-2) and (1-3), the resin being stable to an acid and insoluble in an alkali developer, and (D) a solvent: wherein R1 represents a hydrogen atom or an alkyl group; R2 represents a fluoroalkyl group; R3 represents a hydrogen atom or a monovalent organic group; R4 to R7 each independently represents a hydrogen atom, a fluorine atom, an alkyl group, a fluoroalkyl group, an alkoxy group or a fluoroalkoxy group, provided that at least one of R4 to R7 represents a fluorine atom, and R4 and R5, or R6 and R7 may combine to form a ring; R8 represents a hydrogen atom, a fluorine atom or a monovalent organic group; Rf represents a fluorine atom or a fluorine atom-containing monovalent organic group; L represents a single bond or a divalent linking group; Q represents an alicyclic structure; and k represents an integer of 0 to 3.
摘要:
A positive photosensitive composition comprises (A) a resin that has an acid decomposable repeating unit represented by formula (I) and increases its solubility in an alkali developer by action of an acid; (B) a compound generating an acid in irradiation with actinic light or radiation; (C) a resin that contains neither fluorine nor silicon and has a repeating unit having the predetermined structure; and (D) a solvent, wherein each symbol represents a predetermined group.
摘要:
A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.
摘要:
A positive resist composition comprising: (A) a resin showing an increase in the solubility in an alkali developer by the action of an acid; (B) a compound being capable of generating an acid when irradiated with an actinic ray or a radiation; (C) a resin having a silicon-containing repeating unit of a specific structure and being stable to acids but insoluble in an alkali developer; and (D) a solvent; and a pattern making method using the same.
摘要:
A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (C) a resin having at least one repeating unit selected from fluorine atom-containing repeating units represented by the following formulae (1-1), (1-2) and (1-3), the resin being stable to an acid and insoluble in an alkali developer, and (D) a solvent: wherein R1 represents a hydrogen atom or an alkyl group; R2 represents a fluoroalkyl group; R3 represents a hydrogen atom or a monovalent organic group; R4 to R7 each independently represents a hydrogen atom, a fluorine atom, an alkyl group, a fluoroalkyl group, an alkoxy group or a fluoroalkoxy group, provided that at least one of R4 to R7 represents a fluorine atom, and R4 and R5, or R6 and R7 may combine to form a ring; R8 represents a hydrogen atom, a fluorine atom or a monovalent organic group; Rf represents a fluorine atom or a fluorine atom-containing monovalent organic group; L represents a single bond or a divalent linking group; Q represents an alicyclic structure; and k represents an integer of 0 to 3.
摘要翻译:正型抗蚀剂组合物包括:(A)在酸性作用下在碱性显影剂中的溶解度增加的树脂,(B)在用光化射线或辐射照射时能够产生酸的化合物,(C)具有 选自由下式(1-1),(1-2)和(1-3)表示的含氟原子的重复单元中的至少一种重复单元,该树脂对酸稳定且不溶于碱性显影剂, 和(D)溶剂:其中R 1表示氢原子或烷基; R 2表示氟代烷基; R 3表示氢原子或一价有机基团; R 4至R 7各自独立地表示氢原子,氟原子,烷基,氟烷基,烷氧基或氟烷氧基,条件是至少 R 4至R 7中的一个表示氟原子,R 4和R 5,或R 5, SUB> 6和R 7可以结合形成环; R 8表示氢原子,氟原子或一价有机基团; Rf表示氟原子或含氟原子的一价有机基团; L表示单键或二价连接基团; Q表示脂环结构; k表示0〜3的整数。
摘要:
A positive resist composition for immersion exposure comprises: (A) a resin containing at least one repeating unit having a fluorine atom and increasing a solubility of the resin in an alkali developer by an action of an acid; and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and radiation.
摘要:
A positive resist composition comprising (A) a compound generating a specific sulfonimide compound by irradiation with an actinic ray or a radiation and (B) a resin having a group, which is decomposed by the action of an acid to increase the solubility of the composition in an alkali developer. The resist composition has an improved resolving power and an improved process allowance such as exposure margin and the depth of focus in a lithographic technique using a light source of short wavelengths capable of super fine working and a positive chemically amplified resist.
摘要:
A method of producing a color filter includes (a) forming a colored pattern on a substrate by exposing and developing a colored curable composition containing a dye, a polymerizable monomer and an organic solvent, (b) forming a transparent protective film on the colored pattern, and (c) irradiating at least the transparent protective film with light after forming the transparent protective film on the colored pattern.