公开(公告)号：US07508776B2

公开(公告)日：2009-03-24

申请号：US10824440

申请日：2004-04-15

Applicant: Kevin Lin ,  Morris Chu

Inventor： Kevin Lin ,  Morris Chu

IPC: H04L12/54 ,  H04J3/02 ,  G06F15/00 ,  G06F15/173

CPC classification number: G06F3/061 ,  G06F3/0656 ,  G06F3/0674 ,  G06F13/385 ,  G06F13/387 ,  G06F13/4081 ,  G06F17/5022 ,  G11C5/06 ,  G11C29/56004

Abstract: A controlling method and device for data transmission including the steps of providing a system bus for connecting a first transmission channel and a second transmission channel with a command processor, adjusting a transmitting direction of the system bus according to a transmitting direction of the second transmission channel, and proceeding the data processing procedures of the second transmission channel, wherein parts of data processing procedures of the first transmission channel will last during a interval between the system bus adjusting the transmitting direction and the data processing procedures of the second transmission channel start on.The present invention ensure that the independence between every data caching and processing reduces the times of flushing the cached data from the data transmission channel and re-seeking through the source, shortening the transmission time, increasing facileness and improving the efficiency of the data transmission.

Abstract translation: 一种用于数据传输的控制方法和装置，包括以下步骤：提供用于与命令处理器连接第一传输信道和第二传输信道的系统总线，根据第二传输信道的传输方向调整系统总线的传输方向 并且进行第二传输信道的数据处理过程，其中第一传输信道的数据处理过程的一部分将在调整发射方向的系统总线与第二传输信道的数据处理过程开始之间的间隔期间持续。 本发明确保了每个数据高速缓存与处理之间的独立性，减少了从数据传输通道冲洗缓存数据，通过源重新寻找，缩短传输时间，提高易用性，提高数据传输效率的时间。

公开(公告)号：US20090038553A1

公开(公告)日：2009-02-12

申请号：US11835591

申请日：2007-08-08

Applicant: Kevin Lin ,  Jorge Robles ,  Jessica A. Scott

Inventor： Kevin Lin ,  Jorge Robles ,  Jessica A. Scott

IPC: A01K29/00

CPC classification number: A01K1/0114

Abstract: The present invention provides a thermoformed litter scoop comprising a generally concave scoop portion, and a handle portion attached to the scoop portion. The scoop portion has a bottom, sides and a rear and a plurality of openings therein. The openings are defined to allow the passage of litter granules therethrough. The handle portion has reinforcing ribs and the scoop portion has reinforcing ribs. The invention also describes a method of making a thermoformed scoop.

Abstract translation: 本发明提供了一种热成型的垃圾勺，其包括大致凹形的勺部分，以及附接到勺部分的把手部分。 勺部具有底部，侧面和后部以及多个开口。 开口限定为允许垃圾颗粒通过其中。 手柄部分具有加强肋，并且铲斗部分具有加强筋。 本发明还描述了制造热成型勺的方法。

公开(公告)号：USD556871S1

公开(公告)日：2007-12-04

申请号：US29248639

申请日：2006-08-25

Applicant: Kevin Lin ,  Camel Hou

Designer： Kevin Lin ,  Camel Hou

公开(公告)号：USD556300S1

公开(公告)日：2007-11-27

申请号：US29248495

申请日：2006-08-18

Applicant: Kevin Lin ,  Camel Hou

Designer： Kevin Lin ,  Camel Hou

公开(公告)号：USD545411S1

公开(公告)日：2007-06-26

申请号：US29248460

申请日：2006-08-17

Applicant: Kevin Lin ,  Camel Hou

Designer： Kevin Lin ,  Camel Hou

公开(公告)号：US20070090151A1

公开(公告)日：2007-04-26

申请号：US11255318

申请日：2005-10-20

Applicant: Tomy Lin ,  Kevin Lin

Inventor： Tomy Lin ,  Kevin Lin

IPC: B23K1/00

CPC classification number: B23K5/22

Abstract: A welding head with heat-conducting structure for a gas welding gun comprises: a housing, a welding head and a non-flat net-like heating member. The housing is formed with a recess and a plurality of air holes in communication with the recess. The welding head is installed on the housing and formed with a guiding slope being located correspondingly to the air holes of the housing, and between the guiding slope and the air holes of the housing is formed a space. The non-flat net-like heating member received in the recess of the housing. The heating effect of the heating member is substantially increased by improving the contacting area. The heat produced during gas combustion will be discharged via the air holes and then guided to flow in the direction of the guide slope, and thus it can be prevented from damaging the neighboring electronic components.

Abstract translation: 一种用于气体焊枪的导热结构的焊接头包括：壳体，焊接头和非扁平网状加热构件。 壳体形成有与凹部连通的凹部和多个气孔。 焊接头安装在壳体上并且形成有与壳体的气孔相对应的引导斜面，并且在引导斜面和壳体的气孔之间形成空间。 非扁平网状加热构件容纳在壳体的凹部中。 加热部件的加热效果通过改善接触面积而显着提高。 气体燃烧时产生的热量将通过空气孔排出，然后被引导以沿着导向斜坡的方向流动，从而可以防止相邻电子部件的损坏。

公开(公告)号：US07192662B2

公开(公告)日：2007-03-20

申请号：US10909529

申请日：2004-08-02

Applicant: Chaopeng Chen ,  Kevin Lin ,  Jei Wei Chang

Inventor： Chaopeng Chen ,  Kevin Lin ,  Jei Wei Chang

IPC: G11B5/33

CPC classification number: C25D5/18 ,  C25D3/562 ,  C25D5/006 ,  C25D7/001 ,  G11B5/3109 ,  G11B5/3163 ,  H01F10/16 ,  H01F41/26 ,  Y10T428/115 ,  Y10T428/12493

Abstract: A plated magnetic thin film of high saturation magnetization and low coercivity having the general form Co100-a-bFeaMb, where M can be Mo, Cr, W, Ni or Rh, which is suitable for use in magnetic recording heads that write on narrow trackwidth, high coercivity media. The plating method that produces the alloy includes four current application processes: direct current, pulsed current, pulse reversed current and conditioned pulse reversed current.

Abstract translation: 具有高饱和磁化强度和低矫顽力的电镀磁性薄膜具有一般形式，其中M可以是 Mo，Cr，W，Ni或Rh，其适用于写在窄轨道宽度，高矫顽力介质上的磁记录头。 生产合金的电镀方法包括四个电流施加工艺：直流，脉冲电流，脉冲反向电流和调节脉冲反向电流。

公开(公告)号：US07136323B2

公开(公告)日：2006-11-14

申请号：US11162972

申请日：2005-09-29

Applicant: Kevin Lin ,  Alex Chang

Inventor： Kevin Lin ,  Alex Chang

IPC: G11C8/00

CPC classification number: G06F13/4234

Abstract: Apparatus and method for generating a variable-frequency clock is disclosed. A control state machine defines various commands and generates corresponding control signals. A variable-frequency clock generator then outputs the variable-frequency clock that has a specific pattern corresponding with the respective command, where the variable-frequency clock is constructed with a first clock and a second clock having a frequency different from the first clock. A control signals generator accordingly outputs the control signals that are also constructed with the first clock and the second clock.

Abstract translation: 公开了一种用于产生可变频率时钟的装置和方法。 控制状态机定义各种命令并产生相应的控制信号。 然后，可变频率时钟发生器输出具有与相应命令对应的特定模式的可变频率时钟，其中可变频率时钟由第一时钟构成，第二时钟具有与第一时钟不同的频率。 控制信号发生器相应地输出也由第一时钟和第二时钟构成的控制信号。

公开(公告)号：US20050249025A1

公开(公告)日：2005-11-10

申请号：US10709299

申请日：2004-04-27

Applicant: Kevin Lin ,  Alex Chang

Inventor： Kevin Lin ,  Alex Chang

IPC: G06F13/42 ,  G11C8/00 ,  G11C11/407

CPC classification number: G06F13/4234

Abstract: A method for providing a variable frequency clock for a SDRAM. First, receiving a clock with a fixed frequency and a plurality of signals, wherein each the signal is an interlace combination of a plurality of high level signals and a plurality of low levels signals. Second, extracting a plurality of proper positions from the signals, wherein each low level of each the signal corresponds to a proper position. Third, amending the frequency of the clock such that each the proper position corresponds to a rising edge of the clock.

Abstract translation: 一种用于为SDRAM提供可变频率时钟的方法。 首先，接收具有固定频率和多个信号的时钟，其中每个信号是多个高电平信号和多个低电平信号的隔行组合。 第二，从信号中提取多个适当的位置，其中每个信号的每个低电平对应于适当的位置。 第三，修改时钟的频率，使得每个正确的位置对应于时钟的上升沿。

公开(公告)号：US06403411B1

公开(公告)日：2002-06-11

申请号：US09208601

申请日：1998-12-08

Applicant: Chih-Hsun Chu ,  Horng-Nan Chern ,  Kevin Lin ,  Kuo-Tai Huang ,  Wen-Yi Hsieh ,  Tri-Rung Yew

Inventor： Chih-Hsun Chu ,  Horng-Nan Chern ,  Kevin Lin ,  Kuo-Tai Huang ,  Wen-Yi Hsieh ,  Tri-Rung Yew

IPC: H01L218234

CPC classification number: H01L28/84 ,  H01L21/76895

Abstract: A method for manufacturing the lower electrode of a DRAM capacitor. The method includes depositing polysilicon instead of amorphous silicon to form the lower electrode. Because polysilicon has a higher depositing temperature, it has a higher depositing rate capable of shortening depositing time. After forming the polysilicon lower electrode, the upper portion of the polysilicon layer is transformed into an amorphous layer by bombarding the polysilicon layer with ions to damage its internal structure. Eventually, hemispherical grain silicon is able to grow over the lower electrode, thereby increasing its surface area.

Abstract translation: 一种用于制造DRAM电容器的下电极的方法。 该方法包括沉积多晶硅而不是非晶硅以形成下电极。 由于多晶硅具有较高的沉积温度，因此具有更高的沉积速率，能够缩短沉积时间。 在形成多晶硅下电极之后，通过用离子轰击多晶硅层将多晶硅层的上部转变成非晶层，以破坏其内部结构。 最终，半球形晶粒硅能够在下电极上生长，从而增加其表面积。