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173 条记录 (耗时 0.027 秒)

    SEMICONDUCTOR DEVICE
    42.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090134434A1

    公开(公告)日：2009-05-28

    申请号：US11944717

    申请日：2007-11-26

    申请人： Wolfgang Werner

    发明人： Wolfgang Werner

    IPC分类号： H01L27/06 ,  H01L29/808

    CPC分类号： H01L29/7802 ,  H01L27/0705 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7803 ,  H01L29/7828

    摘要： A semiconductor device is disclosed. One embodiment provides a top surface. A first lateral semiconductor region is arranged adjacent to the top surface and includes a transistor structure. The transistor structure includes a drain zone of a first conductivity type. A second lateral semiconductor region is arranged below the first semiconductor region and includes a junction field-effect transistor structure. The junction field-effect transistor structure includes a source zone of the first conductivity type which is electrically connected to the drain zone of the transistor structure.

    摘要翻译： 公开了一种半导体器件。 一个实施例提供了顶面。 第一横向半导体区域布置成与顶表面相邻并且包括晶体管结构。 晶体管结构包括第一导电类型的漏区。 第二横向半导体区域布置在第一半导体区域的下方并且包括结型场效应晶体管结构。 结场效应晶体管结构包括电连接到晶体管结构的漏极区的第一导电类型的源极区。

    Method for operating an automation device and automation device
    43.
    发明申请
    Method for operating an automation device and automation device 有权
    用于操作自动化设备和自动化设备的方法

    公开(公告)号：US20070286242A1

    公开(公告)日：2007-12-13

    申请号：US11811943

    申请日：2007-06-12

    申请人： Wilhelm Diesch ,  Dieter Klotz ,  Patrik Sieberling ,  Wolfgang Werner

    发明人： Wilhelm Diesch ,  Dieter Klotz ,  Patrik Sieberling ,  Wolfgang Werner

    IPC分类号： H04J1/00

    CPC分类号： H04L49/901 ,  H04L49/90

    摘要： A method is specified for the operation of an automation device provided for the receiving of telegrams together with such an automation device, which is distinguished by the fact that the automation device manages a resource pool for telegrams which are arriving or received, that the automation device distinguishes between active and new communication relationships with a remote communication participant and that for each new communication relationship a free resource is selected from the resource pool and thereafter is used for this communication relationship, which thereby becomes an active communication relationship.

    摘要翻译： 为自动化设备的操作规定了一种用于与这样的自动化设备一起接收电报的自动化设备的操作，该自动化设备的区别在于自动化设备管理到达或接收的报文的资源池，自动化设备 区分与远程通信参与者的活动和新的通信关系，并且对于每个新的通信关系，从资源池中选择一个空闲资源，此后将被用于该通信关系，从而成为主动通信关系。

    Field effect semiconductor component and method for its production
    44.
    发明申请
    Field effect semiconductor component and method for its production 审中-公开
    场效应半导体元件及其制作方法

    公开(公告)号：US20070075375A1

    公开(公告)日：2007-04-05

    申请号：US11463755

    申请日：2006-08-10

    申请人： Jeno Tihanyi ,  Nada Tihanyi ,  Wolfgang Werner

    发明人： Jeno Tihanyi ,  Nada Tihanyi ,  Wolfgang Werner

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7395 ,  H01L29/0649

    摘要： A field effect semiconductor component has a bipolar transistor structure in a semiconductor body consisting of a lightly doped upper area of a first conductivity type as base region and of a lower heavily doped area as emitter region with a complementary conductivity type. Between the base region and the emitter region, a horizontal pn junction forms. The emitter region is in resistive contact with a large-area emitter electrode on the rear of the semiconductor component. On the top of the semiconductor component, a first insulated gate electrode and a second insulated gate electrode are arranged adjacently in the area close to the surface. A vertical pn junction region insulated from the upper area is arranged in such a manner that a collector region and the base region of the bipolar transistor structure can be controlled via the insulated gate electrodes (G1 and G2) arranged electrically separately.

    摘要翻译： 场效应半导体元件在半导体主体中具有双极晶体管结构，该半导体主体由作为基极区的第一导电类型的轻掺杂上部区域和作为具有互补导电类型的发射极区域的较低重掺杂区域组成。 在基极区域和发射极区域之间形成水平pn结。 发射极区域与半导体元件后面的大面积发射极电阻接触。 在半导体部件的顶部，第一绝缘栅电极和第二绝缘栅电极相邻布置在靠近表面的区域中。 与上部区域绝缘的垂直pn结区域被布置成使得双极晶体管结构的集电极区域和基极区域可以经由绝缘栅极电极（G＆lt; 1＆gt;和＆ 电气分开排列。

    Power trench transistor
    47.
    发明申请
    Power trench transistor 有权
    功率沟槽晶体管

    公开(公告)号：US20060118864A1

    公开(公告)日：2006-06-08

    申请号：US11264756

    申请日：2005-10-31

    申请人： Franz Hirler ,  Wolfgang Werner ,  Markus Zundel ,  Frank Pfirsch

    发明人： Franz Hirler ,  Wolfgang Werner ,  Markus Zundel ,  Frank Pfirsch

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7811 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7813

    摘要： A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.

    摘要翻译： 功率沟槽晶体管包括其中形成有单元阵列和围绕单元阵列的边缘区域的半导体本体。 第一边缘沟槽形成在边缘区域内。 第一边缘沟槽包含场电极，并且第一边缘沟槽的纵向取向从单元阵列朝向沟槽晶体管的边缘延伸。

    Micromechanical component with sealed membrane openings and method of fabricating a micromechanical component
    49.
    发明授权
    Micromechanical component with sealed membrane openings and method of fabricating a micromechanical component 有权
    具有密封膜开口的微机械部件和制造微机械部件的方法

    公开(公告)号：US06541833B2

    公开(公告)日：2003-04-01

    申请号：US09794663

    申请日：2001-02-27

    申请人： Wolfgang Werner ,  Stefan Kolb

    发明人： Wolfgang Werner ,  Stefan Kolb

    IPC分类号： H01L2982

    CPC分类号： B81C1/00158 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  G01L9/0042 ,  Y10T428/24331

    摘要： The method for producing a micromechanical component includes the following steps: producing a semi-finished micromechanical component; producing openings and forming a cavity; sealing the opening with sealing lids; removing material on the top surface of the first membrane layer, the surface of the first membrane layer being exposed and planarized. The invention also relates to a micromechanical component which can be produced according to the above method and to its use in sensors such as pressure sensors, microphones, or acceleration sensors.

    摘要翻译： 微机械部件的制造方法包括以下步骤：制造半成品微机械部件; 产生开口并形成空腔; 用密封盖密封开口; 去除第一膜层的顶表面上的材料，第一膜层的表面被曝光和平坦化。 本发明还涉及一种可以根据上述方法制造的微机械部件，以及其在诸如压力传感器，麦克风或加速度传感器的传感器中的应用。

    Low impedance VDMOS semiconductor component
    50.
    发明授权
    Low impedance VDMOS semiconductor component 有权

    公开(公告)号：US06534830B2

    公开(公告)日：2003-03-18

    申请号：US10011131

    申请日：2001-11-13

    申请人： Jenoe Tihanyi ,  Wolfgang Werner

    发明人： Jenoe Tihanyi ,  Wolfgang Werner

    IPC分类号： H01L2976

    CPC分类号： H01L29/7802 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7396

    摘要： A low impedance VDMOS semiconductor component having a planar gate structure is described. The VDMOS semiconductor component contains a semiconductor body of a first conductivity type having two main surfaces, including a first main surface and a second main surface disposed substantially opposite to one another. A highly doped first zone of the first conductivity type is disposed in an area of the first main surface. A second zone of a second conductivity type separates the first zone from the semiconductor body. The first zone and the second zone have a trench with a bottom formed therein reaching down to the semiconductor body. An insulating material fills the trench at least beyond an edge of the second zone facing the semiconductor body. A region of the second conductivity type surrounds an area of the bottom of the trench.