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    Power trench transistor
    2.
    发明申请
    Power trench transistor 有权
    功率沟槽晶体管

    公开(公告)号：US20060118864A1

    公开(公告)日：2006-06-08

    申请号：US11264756

    申请日：2005-10-31

    申请人： Franz Hirler ,  Wolfgang Werner ,  Markus Zundel ,  Frank Pfirsch

    发明人： Franz Hirler ,  Wolfgang Werner ,  Markus Zundel ,  Frank Pfirsch

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7811 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7813

    摘要： A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.

    摘要翻译： 功率沟槽晶体管包括其中形成有单元阵列和围绕单元阵列的边缘区域的半导体本体。 第一边缘沟槽形成在边缘区域内。 第一边缘沟槽包含场电极，并且第一边缘沟槽的纵向取向从单元阵列朝向沟槽晶体管的边缘延伸。

    Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone
    4.
    发明申请
    Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone 有权
    具有带场电极的漂移区的垂直半导体元件及其制造方法

    公开(公告)号：US20050082591A1

    公开(公告)日：2005-04-21

    申请号：US10927948

    申请日：2004-08-27

    申请人： Franz Hirler ,  Ralf Henninger ,  Frank Pfirsch ,  Markus Zundel ,  Jenoe Tihanyi

    发明人： Franz Hirler ,  Ralf Henninger ,  Frank Pfirsch ,  Markus Zundel ,  Jenoe Tihanyi

    IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

    CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/407 ,  H01L29/7813 ,  H01L29/861

    摘要： The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features: a semiconductor body (100) having a first side (101) and a second side (102), a drift zone (30) of a first conduction type which is arranged in the region between the first and the second sides (101, 102) and is formed for the purpose of taking up a reverse voltage, a field electrode arrangement arranged in the drift zone (30) and having at least one electrically conducted field electrode (40; 40A-40E; 90A-90J) arranged in a manner insulated from the semiconductor body (100), an electrical potential of the at least one field electrode (40; 40A-40E; 90A-90J) varying in the vertical direction of the semiconductor body (100) at least when a reverse voltage is applied.

    摘要翻译： 本发明涉及一种用于制造垂直半导体部件和具有以下特征的垂直半导体部件的漂移区的方法：具有第一侧（101）和第二侧（102）的半导体本体（100），漂移 第一导电类型的区域（30）布置在第一和第二侧面（101,102）之间的区域中并且被形成为用于吸收反向电压的目的，设置在漂移区域中的场电极布置（ 30），并且具有以与半导体本体（100）绝缘的方式布置的至少一个导电场电极（40; 40A-40E; 90A-90J），所述至少一个场电极 40; 40A-40E; 90A-90J），至少在施加反向电压时，在半导体本体（100）的垂直方向上变化。

    Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone
    5.
    发明授权
    Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone 有权
    具有带场电极的漂移区的垂直半导体元件及其制造方法

    公开(公告)号：US07173306B2

    公开(公告)日：2007-02-06

    申请号：US10927948

    申请日：2004-08-27

    申请人： Franz Hirler ,  Ralf Henninger ,  Frank Pfirsch ,  Markus Zundel ,  Jenoe Tihanyi

    发明人： Franz Hirler ,  Ralf Henninger ,  Frank Pfirsch ,  Markus Zundel ,  Jenoe Tihanyi

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/407 ,  H01L29/7813 ,  H01L29/861

    摘要： The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features: a semiconductor body (100) having a first side (101) and a second side (102), a drift zone (30) of a first conduction type which is arranged in the region between the first and the second sides (101, 102) and is formed for the purpose of taking up a reverse voltage, a field electrode arrangement arranged in the drift zone (30) and having at least one electrically conducted field electrode (40; 40A–40E; 90A–90J) arranged in a manner insulated from the semiconductor body (100), an electrical potential of the at least one field electrode (40; 40A–40E; 90A–90J) varying in the vertical direction of the semiconductor body (100) at least when a reverse voltage is applied.

    摘要翻译： 本发明涉及一种用于制造垂直半导体部件和具有以下特征的垂直半导体部件的漂移区的方法：具有第一侧（101）和第二侧（102）的半导体本体（100），漂移 第一导电类型的区域（30）布置在第一和第二侧面（101,102）之间的区域中并且被形成为用于吸收反向电压的目的，设置在漂移区域中的场电极布置（ 30），并且具有以与半导体本体（100）绝缘的方式布置的至少一个导电场电极（40; 40A-40E; 90A-90J），所述至少一个场电极 40; 40A-40E; 90A-90J），至少在施加反向电压时，在半导体本体（100）的垂直方向上变化。

    Field effect-controllable semiconductor component
    7.
    发明授权
    Field effect-controllable semiconductor component 有权
    场效应可控半导体元件

    公开(公告)号：US6147381A

    公开(公告)日：2000-11-14

    申请号：US187501

    申请日：1998-11-06

    申请人： Franz Hirler ,  Frank Pfirsch ,  Wolfgang Werner

    发明人： Franz Hirler ,  Frank Pfirsch ,  Wolfgang Werner

    IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739 ,  H01L29/72

    CPC分类号： H01L29/0623 ,  H01L29/0619 ,  H01L29/7395 ,  H01L29/0847

    摘要： A field effect-controllable semiconductor component, such as a new IGBT using planar technology, includes a shielding zone disposed about a base zone, resulting in elevation of a minority charge carrier density at a cathode side of the IGBT, leading to a reduction of forward voltage. The effect of a drift field produced due to a concentration gradient between the shielding zone and the base zone is that the inner zone no longer acts as a sink for the minority charge carriers. In order to ensure that the breakdown voltage of the IGBT is not reduced by the incorporation of the shielding zone, a non-connected, floating region of high conductivity is disposed in the region of the inner zone. A lower edge of the non-connected, floating region is deeper in the inner zone than a lower edge of the shielding zone. The non-connected, floating region has a conduction type opposite that of the shielding zone and the inner zone.

    摘要翻译： 诸如使用平面技术的新型IGBT的场效应可控半导体部件包括围绕基极区设置的屏蔽区域，导致IGBT的阴极侧的少量电荷载流子密度升高，导致向前的减少 电压。 由于屏蔽区域和基极区域之间的浓度梯度而产生的漂移场的影响是内部区域不再充当少量电荷载流子的吸收器。 为了确保IGBT的击穿电压不被并入屏蔽区域而降低，在内部区域中设置高导电性的非连接浮动区域。 非连接的浮动区域的下边缘在内区域比屏蔽区域的下边缘更深。 非连接的浮动区域具有与屏蔽区域和内部区域相反的导电类型。

    Semiconductor device having a floating semiconductor zone
    8.
    发明授权
    Semiconductor device having a floating semiconductor zone 有权
    具有浮动半导体区的半导体器件

    公开(公告)号：US08482062B2

    公开(公告)日：2013-07-09

    申请号：US13610240

    申请日：2012-09-11

    申请人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

    发明人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

    摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.

    摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。