公开(公告)号：US07741197B1

公开(公告)日：2010-06-22

申请号：US11643025

申请日：2006-12-20

申请人： Xiangfeng Duan ,  Paul Bernatis ,  Alice Fischer-Colbrie ,  James M. Hamilton ,  Francesco Lemmi ,  Yaoling Pan ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  David P. Stumbo

发明人： Xiangfeng Duan ,  Paul Bernatis ,  Alice Fischer-Colbrie ,  James M. Hamilton ,  Francesco Lemmi ,  Yaoling Pan ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  David P. Stumbo

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02639 ,  B82Y30/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02628 ,  Y10S977/70 ,  Y10S977/742

摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

摘要翻译： 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，其包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。

公开(公告)号：US20080150165A1

公开(公告)日：2008-06-26

申请号：US11936590

申请日：2007-11-07

申请人： David P. Stumbo ,  Yaoling Pan ,  Costas P. Grigoropoulos ,  Nipun Misra

发明人： David P. Stumbo ,  Yaoling Pan ,  Costas P. Grigoropoulos ,  Nipun Misra

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L21/02 ,  H05B1/00

CPC分类号： H01L29/0665 ,  B23K26/073 ,  B82Y10/00 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/0673 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed. The nanowires are in electrical contact with the plurality of electrodes. The nanowires are doped. A polarized laser beam is applied to the nanowires to anneal at least a portion of the nanowires. The nanowires may be aligned substantially parallel to an axis. The laser beam may be polarized in various ways to modify absorption of radiation of the applied laser beam by the nanowires. For example, the laser beam may be polarized in a direction substantially parallel to the axis or substantially perpendicular to the axis to enable different nanowire absorption profiles.

摘要翻译： 提供了用于退火半导体纳米线并用于制造电气器件的方法，系统和装置。 纳米线沉积在基底上。 形成多个电极。 纳米线与多个电极电接触。 纳米线是掺杂的。 将极化激光束施加到纳米线以退火至少一部分纳米线。 纳米线可以基本上平行于轴线对准。 激光束可以以各种方式被极化，以通过纳米线来改变施加的激光束的辐射的吸收。 例如，激光束可以在基本上平行于轴线或基本上垂直于轴线的方向上极化，以实现不同的纳米线吸收曲线。

公开(公告)号：US07105428B2

公开(公告)日：2006-09-12

申请号：US11117703

申请日：2005-04-29

申请人： Yaoling Pan ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Jay L. Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda T. Romano ,  Dave Stumbo

发明人： Yaoling Pan ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Jay L. Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda T. Romano ,  Dave Stumbo

IPC分类号： H01L21/20 ,  H01L21/477 ,  H01L21/31 ,  H01L23/48 ,  H01L29/40 ,  B01J27/22 ,  H01L21/44

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/18 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7854 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/843 ,  Y10S977/891 ,  H01L2924/00

摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.