摘要:
The present invention provides siRNA nucleic acid molecules that inhibit Notch1 expression. Methods of using the nucleic acid molecules are also provided.
摘要:
A method and a computer-readable storage medium are disclosed for flexible network measurement. Embodiments disclose receiving a network measurement request, transmitting portions of the request to network devices, configuring the network devices to collect metrics from packet data based on the portions of the request, and performing operations to generate metrics as a response to the network measurement request. Embodiments also disclose a flexible, dynamically configurable packet parser. Other embodiments are also disclosed.
摘要:
Mechanisms are provided for characterizing long range variability in integrated circuit manufacturing. A model derivation component tests one or more density pattern samples, which are a fabricated integrated circuits having predetermined pattern densities and careful placement of current-voltage (I-V) sensors. The model derivation component generates one or more empirical models to establish range of influence of long range variability effects in the density pattern sample. A variability analysis component receives an integrated circuit design and, using the one or more empirical models, analyzes the integrated circuit design to isolate possible long range variability effects in the integrated circuit design.
摘要:
A method for circuit simulation using a netlist in which a first device having an unmodeled, nonlinear behavior is modified by inserting a second device which has a nonlinear response approximating the unmodeled nonlinear behavior. The first device may be for example a first transistor and the second device may be a variable current source, in particular one whose current is modeled after a floating transistor template which represents gate leakage current of the first transistor (gate-to-source or gate-to-drain). During simulation of the circuit a parameter such as a gate-to-source voltage of the second transistor is controlled to model gate leakage. The model parameters can be a function of an effective quantum mechanical oxide thickness value of a gate of the first transistor technology.
摘要:
Embodiments of the invention include nanoparticulate products of a flash nanoprecipitation process, the products comprising, in combination, pre-formed nanoparticles having properties of an upconversion phosphor and a hydrophobic organic compound having the properties of a photosensitizer, and a method of photodynamic therapy comprising the use of the nanoparticulate products is described.
摘要:
A parallel array architecture for constant current electro-migration stress testing is provided. The parallel array architecture comprises a device under test (DUT) array having a plurality of DUTs coupled in parallel and a plurality of localized heating elements associated with respective ones of the DUTs in the DUT array. The architecture further comprises DUT selection logic that isolates individual DUTs within the array. Moreover, the architecture comprises current source logic that provides a reference current and controls the current through the DUTs in the DUT array such that each DUT in the DUT array has substantially a same current density, and current source enable logic for selectively enabling portions for the current source logic. Electro-migration stress testing is performed on the DUTs of the DUT array using the heating elements, the DUT selection logic, current source logic, and current source enable logic.
摘要:
A unified test structure having a large number of electronic devices under test is used to characterize both capacitance-voltage parameters (C-V) and current-voltage parameters (I-V) of the devices. The devices are arranged in an array of columns and rows, and selected by control logic which gates input/output pins that act variously as current sources, sinks, clamps, measurement ports and sense lines. The capacitance-voltage parameter is measured by taking baseline and excited current measurements for different excitation voltage frequencies, calculating current differences between the baseline and excited current measurements, and generating a linear relationship between the current differences and the different frequencies. The capacitance is then derived by dividing a slope of a line representing the linear relationship by the excitation voltage. Different electronic devices may be so tested, including transistors and interconnect structures.
摘要:
A unified test structure having a large number of electronic devices under test is used to characterize both capacitance-voltage parameters (C-V) and current-voltage parameters (I-V) of the devices. The devices are arranged in an array of columns and rows, and selected by control logic which gates input/output pins that act variously as current sources, sinks, clamps, measurement ports and sense lines. The capacitance-voltage parameter is measured by taking baseline and excited current measurements for different excitation voltage frequencies, calculating current differences between the baseline and excited current measurements, and generating a linear relationship between the current differences and the different frequencies. The capacitance is then derived by dividing a slope of a line representing the linear relationship by the excitation voltage. Different electronic devices may be so tested, including transistors and interconnect structures.
摘要:
A unified test structure having a large number of electronic devices under test is used to characterize both capacitance-voltage parameters (C-V) and current-voltage parameters (I-V) of the devices. The devices are arranged in an array of columns and rows, and selected by control logic which gates input/output pins that act variously as current sources, sinks, clamps, measurement ports and sense lines. The capacitance-voltage parameter is measured by taking baseline and excited current measurements for different excitation voltage frequencies, calculating current differences between the baseline and excited current measurements, and generating a linear relationship between the current differences and the different frequencies. The capacitance is then derived by dividing a slope of a line representing the linear relationship by the excitation voltage. Different electronic devices may be so tested, including transistors and interconnect structures.
摘要:
The present invention provides an illumination module, and a display and a general lighting apparatus using the same. Said illumination module includes a plurality of light guiding strips arranged in juxtaposition with a predefined distance; a plurality of light sources, disposed on at least one end of said light guiding strips respectively for providing the light into said light guiding strips; and a plurality of light reflecting units, disposed between said light guiding strips for reflecting the light from said light guiding strips. The light reflecting units according to the present invention can guide the light from the sides of light guiding strips or other light not toward the right side of the illumination module back to the right side of the illumination module, and thus improving the light output efficiency and uniformity.