公开(公告)号：US08689733B2

公开(公告)日：2014-04-08

申请号：US12176501

申请日：2008-07-21

申请人： Chishio Koshimizu ,  Yohei Yamazawa

发明人： Chishio Koshimizu ,  Yohei Yamazawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/3299

摘要： This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11), and a control means (36) for controlling the impedance of the first filter (27) on the basis of a detection result output from the sensor (28). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.

摘要翻译： 本发明包括连接在基座（21）和接地之间并具有可变阻抗的第一滤波器（27），用于基于在处理室中产生的等离子体（P）的状态来检测电信号的传感器（28） 11），以及控制装置（36），用于根据从传感器（28）输出的检测结果来控制第一过滤器（27）的阻抗。 因此，可以实现与等离子体处理的目的相匹配的优选的等离子体分布。

公开(公告)号：US08251011B2

公开(公告)日：2012-08-28

申请号：US11756097

申请日：2007-05-31

申请人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

发明人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32174 ,  H01J37/321

摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

摘要翻译： 通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。 在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。 提供RF功率的RF电源通过匹配电路连接到第一或第二电极。 匹配电路自动执行相对于RF功率的输入阻抗匹配。 可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。 阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。 控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

公开(公告)号：US20060037704A1

公开(公告)日：2006-02-23

申请号：US11192041

申请日：2005-07-29

申请人： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

发明人： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

IPC分类号： C23F1/00

CPC分类号： H01J37/32091 ,  H01J37/32183

摘要： A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.

摘要翻译： 用于通过使用等离子体处理衬底的等离子体处理装置包括用于在其中容纳和处理衬底的处理室，用于将衬底安装在处理室中的下电极，设置成面对处理室中的下电极的上电极 ，用于向下电极和上电极中的至少一个提供射频电力的射频电源，从而在下电极和上电极之间产生等离子体;以及电特性控制单元，用于调节电路的阻抗 在等离子体的电极的侧面处于存在于处理室中的至少一个射频的频率，使得电路不共振。

公开(公告)号：US08431035B2

公开(公告)日：2013-04-30

申请号：US12465436

申请日：2009-05-13

申请人： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

发明人： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

IPC分类号： H01L21/3065 ,  C23C16/00 ,  C23C16/50 ,  C23C16/503 ,  C23C16/52 ,  B44C1/22

CPC分类号： H01J37/32091 ,  H01J37/32183

摘要： A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.

摘要翻译： 用于通过使用等离子体处理衬底的等离子体处理装置包括用于在其中容纳和处理衬底的处理室，用于将衬底安装在处理室中的下电极，设置成面对处理室中的下电极的上电极 ，用于向下电极和上电极中的至少一个提供射频电力的射频电源，从而在下电极和上电极之间产生等离子体;以及电特性控制单元，用于调节电路的阻抗 在等离子体的电极的侧面处于存在于处理室中的至少一个射频的频率，使得电路不共振。

公开(公告)号：US20070284044A1

公开(公告)日：2007-12-13

申请号：US11742688

申请日：2007-05-01

申请人： Naoki MATSUMOTO ,  Yohei Yamazawa ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

发明人： Naoki MATSUMOTO ,  Yohei Yamazawa ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

IPC分类号： H01L21/306

CPC分类号： G01N21/68 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

摘要翻译： 用于测量等离子体电子密度的装置即使在低电子密度条件或高压条件下也能精确地测量等离子体中的电子密度。 该等离子体电子密度测量装置包括测量单元中的矢量网络分析仪，其测量复数反射系数并确定系数的虚部的频率特性。 读取复数反射系数的虚部为零交叉点的共振频率，并且通过测量控制单元基于谐振频率计算电子密度。

公开(公告)号：US20050009347A1

公开(公告)日：2005-01-13

申请号：US10831757

申请日：2004-04-26

申请人： Naoki Matsumoto ,  Yohei Yamazawa ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

发明人： Naoki Matsumoto ,  Yohei Yamazawa ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

IPC分类号： H05H1/00 ,  C23C16/52 ,  C23F4/00 ,  G01N23/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461 ,  H01L21/66 ,  H05H1/46

CPC分类号： G01N21/68 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

摘要翻译： 用于测量等离子体电子密度的装置即使在低电子密度条件或高压条件下也能精确地测量等离子体中的电子密度。 该等离子体电子密度测量装置包括测量单元中的矢量网络分析仪，其测量复数反射系数并确定系数的虚部的频率特性。 读取复数反射系数的虚部为零交叉点的共振频率，并且通过测量控制单元基于谐振频率计算电子密度。

公开(公告)号：US08824875B2

公开(公告)日：2014-09-02

申请号：US13034858

申请日：2011-02-25

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： A21B2/00 ,  F26B19/00

CPC分类号： H01L21/67115 ,  F27B17/0025 ,  F27D11/12

摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.

摘要翻译： 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

公开(公告)号：US08777483B2

公开(公告)日：2014-07-15

申请号：US13231027

申请日：2011-09-13

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

IPC分类号： G01K1/00 ,  G01J5/00

CPC分类号： G01K11/12

摘要： The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit.

摘要翻译： 温度测量装置包括：光源; 将来自光源的光波长分割成波长彼此不同的m个光的第一波长分割单元; m个第一分割单元，其将每个m个光从第一波长分割单元分成n个灯; 发射单元，其将来自第m分割单元的光传输到被测量物体的测量点; 光接收单元，其接收由每个测量点反射的光; 以及温度计算单元，其基于由光接收单元接收的光的波形来计算每个测量点的温度。

公开(公告)号：US08523428B2

公开(公告)日：2013-09-03

申请号：US13432617

申请日：2012-03-28

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： G01K13/00

CPC分类号： G01K11/14 ,  G01K5/48 ,  H01L21/67248

摘要： A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.

摘要翻译： 在基板处理装置的处理室中的部件，其中即使当前表面和后表面由于磨损而不平行时，也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度 ，等等。 在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面，未暴露于研磨性气氛的非磨损表面，包括顶表面和底部的薄壁部分 表面彼此平行;以及涂覆部件，其涂覆在薄壁部分的顶表面上，其中在薄壁部分的每个顶表面和底表面上执行镜像整理。

公开(公告)号：US20120176692A1

公开(公告)日：2012-07-12

申请号：US13344926

申请日：2012-01-06

申请人： Jun Yamawaku ,  Chishio Koshimizu

发明人： Jun Yamawaku ,  Chishio Koshimizu

IPC分类号： G02B7/04 ,  H01L21/306

CPC分类号： H01J37/32642 ,  H01J37/32724

摘要： There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.

摘要翻译： 提供了一种聚焦环，其能够防止沉积物粘附到具有不同温度的两个构件之间的间隙中具有较低温度的构件。 焦点环25设置成围绕基板处理装置10的腔室11中的晶片W的周边部分。聚焦环25包括内聚焦环25a和外聚焦环25b。 这里，内聚焦环25a被放置成与晶片W相邻并被配置为被冷却; 并且外聚焦环25b被放置成围绕内聚焦环25a并且被配置为不被冷却。 此外，在内聚焦环25a和外聚焦环25b之间的间隙中设置有块部件25c。