公开(公告)号：US20080150043A1

公开(公告)日：2008-06-26

申请号：US11826170

申请日：2007-07-12

Applicant: Seung-Nam Cha ,  Jae-Eun Jang ,  Jae-Eun Jung ,  Yong-Wan Jin ,  Byong-Gwon Song

Inventor： Seung-Nam Cha ,  Jae-Eun Jang ,  Jae-Eun Jung ,  Yong-Wan Jin ,  Byong-Gwon Song

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/42372 ,  H01L21/2652 ,  H01L21/2807 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/515 ,  H01L29/6659

Abstract: A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.

Abstract translation: 晶体管包括：半导体衬底; 布置在所述半导体衬底上的沟道区; 分别布置在通道区域的任一侧上的源极和漏极; 以及布置在半导体衬底上以横向源极和漏极之间的沟道区域的导电纳米管栅极。 其制造方法包括：在半导体衬底的表面上布置导电纳米管; 限定具有预定尺寸并穿过纳米管的源区和漏区; 在源极和漏极区域上形成金属层; 去除形成在纳米管上的金属层的一部分，以分别形成与纳米管的任一侧上的金属层分离的源极和漏极; 以及通过离子注入在排列在源极和漏极之间的纳米管下方的沟道区域掺杂。

公开(公告)号：US20070229003A1

公开(公告)日：2007-10-04

申请号：US11510580

申请日：2006-08-28

Applicant: Shang-Hyeun Park ,  Chan-Wook Baik ,  Jeong-Hee Lee ,  Yong-Wan Jin

Inventor： Shang-Hyeun Park ,  Chan-Wook Baik ,  Jeong-Hee Lee ,  Yong-Wan Jin

IPC: H01J1/02 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J63/06

Abstract: A field emission type backlight unit and a method of manufacturing the same. The field emission type backlight unit includes a lower substrate, a plurality of cathode electrodes formed on the lower substrate, a plurality of insulating layers formed in a line shape on the lower substrate and the cathode electrodes, a plurality of gate electrodes formed on the insulating layers, and at least one emitter formed of an electron emission material on each cathode electrode between the insulating layers.

Abstract translation: 场发射型背光单元及其制造方法。 场致发射型背光单元包括下基板，形成在下基板上的多个阴极电极，在下基板上形成为线状的多个绝缘层和阴极电极，形成在绝缘体上的多个栅电极 以及在绝缘层之间的每个阴极电极上由电子发射材料形成的至少一个发射体。

公开(公告)号：US20070228928A1

公开(公告)日：2007-10-04

申请号：US11655153

申请日：2007-01-19

Applicant: Kyong-Won Min ,  Byong-Gwon Song ,  Yong-Wan Jin ,  Deuk-Seok Chung ,  Moon-Jin Shin

Inventor： Kyong-Won Min ,  Byong-Gwon Song ,  Yong-Wan Jin ,  Deuk-Seok Chung ,  Moon-Jin Shin

IPC: H01J1/62

CPC classification number: H01J9/385 ,  H01J31/127 ,  H01J2329/941

Abstract: A field emission display device and a field emission type backlight device having a sealing structure for a vacuum exhaust are provided. The field emission display device is constructed with a cathode substrate and an anode substrate attached to each other and facing each other and a vacuum-exhausted panel space formed therebetween to generated a visual image. Also, the field emission display device is constructed with a sealing member disposed along edges of the cathode substrate and the anode substrate to seal the panel space. At least one inlet exposed to the panel space and an exhaust passage through which the inlet communicates with an outside of the field emission display device are formed in the sealing member. The field emission display device and the field emission type backlight device according to the present invention has a reduced number of manufacturing processes and is suitable for a compact, slim and lightweight design, and a large screen by having the sealing structure for the vacuum exhaust.

Abstract translation: 提供了一种具有真空排气密封结构的场发射显示装置和场发射型背光装置。 场致发射显示装置由阴极基板和阳极基板构成，彼此相邻并且彼此面对，并且在其间形成真空排空的面板空间以产生视觉图像。 此外，场致发射显示装置构造有沿着阴极基板和阳极基板的边缘设置的密封构件，以密封面板空间。 在密封构件中形成有至少一个暴露于面板空间的入口和入口与场致发射显示装置的外部连通的排气通道。 根据本发明的场致发射显示装置和场发射型背光装置的制造工艺数量减少，并且适合于紧凑，纤薄和轻便的设计，并且通过具有用于真空排气的密封结构的大屏幕。

公开(公告)号：US20070051970A1

公开(公告)日：2007-03-08

申请号：US11408054

申请日：2006-04-21

Applicant: Jae-Eun Jang ,  Seung-nam Cha ,  Yong-Wan Jin ,  Byong-Gwon Song

Inventor： Jae-Eun Jang ,  Seung-nam Cha ,  Yong-Wan Jin ,  Byong-Gwon Song

IPC: H01L29/74

CPC classification number: B81C1/00111 ,  B81B3/0086 ,  B81B2201/018 ,  H01H1/0094 ,  Y10S977/762 ,  Y10T29/49105

Abstract: A nanowire electronmechanical device with an improved structure and a method of fabricating the same prevent burning of two nanowires which are switched due to contact with each other while providing stable on-off switching characteristics. The nanowire electromechanical device comprises: an insulating substrate; first and third electrodes spaced apart from each other on the insulating substrate, wherein a negative voltage and a positive voltage, varying within a predetermined range, are applied to the first and third electrodes, respectively; a second electrode interposed between the first and third electrodes, a constant positive voltage, lower than the voltage applied to the third electrode, being applied to the second electrode; a first nanowire vertically grown on the first electrode and charged with a negative charge; a second nanowire vertically grown on the second electrode and charged with a positive charge; and a third nanowire vertically grown on the third electrode and charged with an amount of positive charge corresponding to the magnitude of the varying voltage applied to the third electrode.

Abstract translation: 具有改进的结构的纳米线电子机械装置及其制造方法防止由于彼此接触而切换的两个纳米线的燃烧，同时提供稳定的开 - 关开关特性。 纳米线机电装置包括：绝缘基板; 第一和第三电极在绝缘基板上彼此间隔开，其中在预定范围内变化的负电压和正电压分别施加到第一和第三电极; 插入在第一和第三电极之间的第二电极，施加到第二电极的恒定的正电压低于施加到第三电极的电压; 在第一电极上垂直生长并带有负电荷的第一纳米线; 在第二电极上垂直生长并带有正电荷的第二纳米线; 以及在第三电极上垂直生长的第三纳米线，并充有与施加到第三电极的变化电压的幅度相对应的一定量的正电荷。

公开(公告)号：US20060192475A1

公开(公告)日：2006-08-31

申请号：US11244106

申请日：2005-10-06

Applicant: Hang-Woo Lee ,  Yong-Wan Jin ,  In-Taek Han ,  Ha-Jin Kim ,  Min-Jong Bae

Inventor： Hang-Woo Lee ,  Yong-Wan Jin ,  In-Taek Han ,  Ha-Jin Kim ,  Min-Jong Bae

IPC: H01J1/14 ,  H01J63/04

CPC classification number: H01J29/481 ,  B82Y10/00 ,  B82Y30/00 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30469 ,  Y10S977/84 ,  Y10S977/842 ,  Y10S977/847 ,  Y10S977/89

Abstract: A carbon nanotube emitter and its fabrication method, a Field Emission Device (FED) using the carbon nanotube emitter and its fabrication method include a carbon nanotube emitter having a plurality of first carbon nanotubes arranged on a substrate and in parallel with the substrate, and a plurality of the second carbon nanotubes arranged on a surface of the first carbon nanotubes.

公开(公告)号：US20050129858A1

公开(公告)日：2005-06-16

申请号：US10992333

申请日：2004-11-19

Applicant: Yong-Wan Jin ,  Hyun-Jung Lee ,  Jong-Woon Moon ,  Deuk-Seok Chung ,  Jun-Hee Choi ,  Sung-Hee Cho

Inventor： Yong-Wan Jin ,  Hyun-Jung Lee ,  Jong-Woon Moon ,  Deuk-Seok Chung ,  Jun-Hee Choi ,  Sung-Hee Cho

IPC: H01J1/304 ,  H01J9/02 ,  B05D3/02

CPC classification number: H01J9/025 ,  B82Y30/00 ,  H01J1/3042

Abstract: A method of forming a carbon nanotube emitter includes: forming a carbon nanotube composite on a substrate with a predetermined shape, coating surface treating material in a liquid phase on the carbon nanotube composite and drying the surface treating material, and peeling the dried surface treating material off of the carbon nanotube composite.

Abstract translation: 形成碳纳米管发射体的方法包括：在具有预定形状的基板上形成碳纳米管复合材料，在碳纳米管复合材料上形成液相涂布表面处理材料，并干燥表面处理材料，并将干燥的表面处理材料 关闭碳纳米管复合材料。