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    Field emission type backlight unit and method of manufacturing the same
    1.
    发明申请
    Field emission type backlight unit and method of manufacturing the same 审中-公开
    场发射型背光单元及其制造方法

    公开(公告)号：US20070229003A1

    公开(公告)日：2007-10-04

    申请号：US11510580

    申请日：2006-08-28

    申请人： Shang-Hyeun Park ,  Chan-Wook Baik ,  Jeong-Hee Lee ,  Yong-Wan Jin

    发明人： Shang-Hyeun Park ,  Chan-Wook Baik ,  Jeong-Hee Lee ,  Yong-Wan Jin

    IPC分类号： H01J1/02 ,  H01J9/02

    CPC分类号： H01J9/025 ,  H01J63/06

    摘要： A field emission type backlight unit and a method of manufacturing the same. The field emission type backlight unit includes a lower substrate, a plurality of cathode electrodes formed on the lower substrate, a plurality of insulating layers formed in a line shape on the lower substrate and the cathode electrodes, a plurality of gate electrodes formed on the insulating layers, and at least one emitter formed of an electron emission material on each cathode electrode between the insulating layers.

    摘要翻译： 场发射型背光单元及其制造方法。 场致发射型背光单元包括下基板，形成在下基板上的多个阴极电极，在下基板上形成为线状的多个绝缘层和阴极电极，形成在绝缘体上的多个栅电极 以及在绝缘层之间的每个阴极电极上由电子发射材料形成的至少一个发射体。

    Transfer film having organic polymer film and method of forming thin metal layer using the transfer film
    2.
    发明申请
    Transfer film having organic polymer film and method of forming thin metal layer using the transfer film 审中-公开
    使用有机聚合物膜的转印膜和使用转印膜形成薄金属层的方法

    公开(公告)号：US20080044671A1

    公开(公告)日：2008-02-21

    申请号：US11785587

    申请日：2007-04-18

    申请人： Jeong-Hee Lee ,  Tae-Won Jeong ,  Jeong-Na Heo ,  Yong-Wan Jin ,  Shang-Hyeun Park

    发明人： Jeong-Hee Lee ,  Tae-Won Jeong ,  Jeong-Na Heo ,  Yong-Wan Jin ,  Shang-Hyeun Park

    IPC分类号： B41M3/12 ,  B32B15/04

    CPC分类号： B32B15/04 ,  Y10T428/31678

    摘要： A transfer film includes an organic film that can be removed using a solvent and a metal film formed on the organic film. The metal film is formed by: preparing a first substrate; forming a transfer film by stacking an organic film and a metal film on the first substrate; separating the transfer film from the first substrate; bonding the transfer film separated from the first substrate to a second substrate by arranging the metal film to face the second substrate; and removing the organic film from the metal film using a solvent.

    摘要翻译： 转印膜包括可以使用溶剂除去的有机膜和形成在有机膜上的金属膜。 金属膜通过以下方式形成：制备第一基板; 通过在第一基板上层叠有机膜和金属膜来形成转印膜; 从第一基板分离转印膜; 通过将金属膜设置为面对第二基板，将从第一基板分离的转印膜接合到第二基板; 并使用溶剂从金属膜除去有机膜。

    Display device
    3.
    发明申请
    Display device 审中-公开
    显示设备

    公开(公告)号：US20070080625A1

    公开(公告)日：2007-04-12

    申请号：US11449738

    申请日：2006-06-09

    申请人： Shang-Hyeun Park ,  Jeong-Hee Lee ,  Yong-Wan Jin ,  In-Taek Han ,  Jeong-Na Heo ,  Tae-Won Jeong

    发明人： Shang-Hyeun Park ,  Jeong-Hee Lee ,  Yong-Wan Jin ,  In-Taek Han ,  Jeong-Na Heo ,  Tae-Won Jeong

    IPC分类号： H01J63/04 ,  H01J1/62

    CPC分类号： H01J31/123 ,  H01J31/127

    摘要： A display device includes: a first substrate and a second substrate, a plurality of first electrodes, a light emitting layer, and a plurality of second electrodes. The first and second substrates are spaced apart to face each other, and the plurality of first electrodes are formed on an inner surface of the first substrate. The light emitting layer is arranged on the plurality of first electrodes and includes phosphor bodies and light emitting sources mixed therein. The plurality of second electrodes are arranged on an inner surface of the second substrate.

    摘要翻译： 显示装置包括：第一基板和第二基板，多个第一电极，发光层和多个第二电极。 第一和第二基板间隔开以面对彼此，并且多个第一电极形成在第一基板的内表面上。 发光层布置在多个第一电极上，并且包括混合在其中的荧光体和发光源。 多个第二电极布置在第二基板的内表面上。

    Electroluminescent device
    4.
    发明申请
    Electroluminescent device 审中-公开
    电致发光器件

    公开(公告)号：US20080007171A1

    公开(公告)日：2008-01-10

    申请号：US11730720

    申请日：2007-04-03

    申请人： Tae-Won Jeong ,  Shang-Hyeun Park ,  Jeong-Na Heo ,  Jeong-Hee Lee ,  Jong-Min Kim ,  Jin-Pyo Hong ,  Yong-Wan Jin ,  Byong-Gwon Song

    发明人： Tae-Won Jeong ,  Shang-Hyeun Park ,  Jeong-Na Heo ,  Jeong-Hee Lee ,  Jong-Min Kim ,  Jin-Pyo Hong ,  Yong-Wan Jin ,  Byong-Gwon Song

    IPC分类号： H01J63/04

    CPC分类号： H05B33/10 ,  H05B33/24 ,  H05B33/26 ,  H05B33/28

    摘要： An electroluminescent device uses nano structures having a wide surface area. The electroluminescent device includes a substrate, a first electrode having a plurality of nano structures formed on an upper surface of the substrate, a dielectric layer formed so as to correspond to the shape of the nano structures, a light emitting layer formed so as to correspond to the shape of the dielectric layer, and a second electrode covering the light emitting layer. A surface of the second electrode facing the light emitting layer is separated by a predetermined distance from a surface of the nano structures.

    摘要翻译： 电致发光器件使用具有宽表面积的纳米结构。 电致发光器件包括衬底，具有形成在衬底的上表面上的多个纳米结构的第一电极，形成为对应于纳米结构的形状的电介质层，形成为对应于发光层的发光层 到电介质层的形状，以及覆盖发光层的第二电极。 面向发光层的第二电极的表面与纳米结构的表面隔开预定的距离。

    Field emission type backlight unit and method of manufacturing upper panel thereof
    5.
    发明申请
    Field emission type backlight unit and method of manufacturing upper panel thereof 审中-公开
    场发射型背光单元及其制造方法

    公开(公告)号：US20070164653A1

    公开(公告)日：2007-07-19

    申请号：US11509622

    申请日：2006-08-25

    申请人： Byong-Gwon Song ,  Shang-Hyeun Park ,  Yong-Wan Jin ,  Sun-Il Kim ,  Tae-Won Jeong

    发明人： Byong-Gwon Song ,  Shang-Hyeun Park ,  Yong-Wan Jin ,  Sun-Il Kim ,  Tae-Won Jeong

    IPC分类号： H01J63/04 ,  H01J1/62 ,  B05D5/12

    CPC分类号： H01J63/06 ,  B82Y10/00 ,  H01J2201/30469

    摘要： A method of manufacturing an upper panel of a field emission type backlight unit. The method includes: sequentially forming an anode electrode and a phosphor layer on a substrate; forming a metal reflection film on the phosphor layer; and annealing a surface of the metal reflection film. The method can increase brightness of an image, can prevent occurrence of an electric arc when a high driving voltage is applied to the backlight unit, and allows removal of residues produced when manufacturing the backlight unit.

    摘要翻译： 一种制造场致发射型背光单元的上面板的方法。 该方法包括：在基板上依次形成阳极电极和荧光体层; 在荧光体层上形成金属反射膜; 并退火金属反射膜的表面。 该方法可以增加图像的亮度，当向背光单元施加高驱动电压时可以防止发生电弧，并且允许去除制造背光单元时产生的残留物。

    Method of manufacturing field emission device
    6.
    发明授权
    Method of manufacturing field emission device 有权
    场致发射装置的制造方法

    公开(公告)号：US07942714B2

    公开(公告)日：2011-05-17

    申请号：US11790657

    申请日：2007-04-26

    申请人： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

    发明人： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

    IPC分类号： H01J9/02 ,  H01J1/304

    CPC分类号： H01J63/02 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455

    摘要： A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.

    摘要翻译： 场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

    Method of manufacturing field emission device
    7.
    发明申请
    Method of manufacturing field emission device 有权
    场致发射装置的制造方法

    公开(公告)号：US20080108271A1

    公开(公告)日：2008-05-08

    申请号：US11790657

    申请日：2007-04-26

    申请人： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

    发明人： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

    IPC分类号： H01J9/02

    CPC分类号： H01J63/02 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455

    摘要： A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.

    摘要翻译： 场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

    Mechanical memory device and method of manufacturing the same
    9.
    发明申请
    Mechanical memory device and method of manufacturing the same 失效
    机械记忆装置及其制造方法

    公开(公告)号：US20070138525A1

    公开(公告)日：2007-06-21

    申请号：US11606966

    申请日：2006-12-01

    申请人： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

    发明人： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

    IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01L27/10805 ,  H01L27/1203 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/86 ,  Y10S977/724 ,  Y10S977/725

    摘要： A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a source electrode, a drain electrode, and a gate electrode, each of which is formed on an insulating substrate. A nanowire capacitor is formed on the source electrode. The nanowire capacitor includes a first nanowire vertically grown from the source electrode, a dielectric layer formed on the outer surface of the first nanowire, and a floating electrode formed on the outer surface of the dielectric layer. A second nanowire is vertically grown on the drain electrode. The drain electrode is arranged between the source electrode and the gate electrode. The second nanowire is elastically deformed and contacts the nanowire capacitor when a drain voltage is applied to the drain electrode, and polarity of the drain voltage is opposite to polarity of a source voltage that is applied to the source electrode. Information is stored in the memory device in a form of a charged or non-charged state of the nanowire capacitor. Reading and writing operation of the memory device is performed by the mechanical movement of the second nanowire.

    摘要翻译： 提供了使用纳米线的机械移动执行写入和读取操作的存储器件，以及制造存储器件的方法。 存储器件包括源电极，漏电极和栅电极，它们都形成在绝缘衬底上。 在源电极上形成纳米线电容器。 纳米线电容器包括从源极垂直生长的第一纳米线，形成在第一纳米线的外表面上的电介质层和形成在电介质层的外表面上的浮动电极。 在漏电极上垂直生长第二纳米线。 漏极布置在源电极和栅电极之间。 当向漏电极施加漏极电压时，第二纳米线弹性变形并与纳米线电容器接触，并且漏极电压的极性与施加到源电极的源极电压的极性相反。 信息以纳米线电容器的充电或非充电状态的形式存储在存储器件中。 通过第二纳米线的机械运动来进行记忆装置的读写操作。