公开(公告)号：US6015066A

公开(公告)日：2000-01-18

申请号：US991783

申请日：1997-12-16

申请人： Yoshio Kimura ,  Satoshi Morita ,  Yuji Matsuyama ,  Norio Semba

发明人： Yoshio Kimura ,  Satoshi Morita ,  Yuji Matsuyama ,  Norio Semba

IPC分类号： G03F7/30 ,  B67D5/08

CPC分类号： G03F7/30 ,  Y10T137/3124

摘要： Disclosed herein is a device for supplying a liquid to a plurality of apparatuses which apply the liquid to substrates to process the substrates. The device comprises a tank containing the liquid, a supply passage for supplying the liquid from the tank to the apparatuses, branch passages connected to the supply passage, for supplying the liquid to liquid-applying members provided in the apparatuses, and valves provided on the branch passages, respectively. The valves are controlled each other, for opening and closing the branch passages such that the liquid-applying member of one apparatus applies the liquid to a substrate while the liquid-applying member of any other apparatus remains to apply the liquid to a substrate.

摘要翻译： 这里公开了一种用于将液体供应到将液体施加到基板以处理基板的多个装置的装置。 该装置包括容纳液体的容器，用于将液体从罐供给到设备的供给通道，连接到供给通道的分支通道，用于将液体供应到设置在设备中的液体施加部件， 分支通道。 阀被彼此控制，用于打开和关闭分支通道，使得一个设备的液体施加构件将液体施加到基底，同时任何其他设备的液体施加构件保持将液体施加到基底。

公开(公告)号：US5733375A

公开(公告)日：1998-03-31

申请号：US580620

申请日：1995-12-29

申请人： Takahide Fukuda ,  Shinichiro Izumi ,  Yoshio Kimura ,  Yuuji Matsuyama ,  Satoshi Morita ,  Kunie Tsunematsu

发明人： Takahide Fukuda ,  Shinichiro Izumi ,  Yoshio Kimura ,  Yuuji Matsuyama ,  Satoshi Morita ,  Kunie Tsunematsu

IPC分类号： C23C16/448 ,  C23C16/00 ,  B01F3/04

CPC分类号： C23C16/4482

摘要： An apparatus for supplying a treating material to a treating device has a tank containing a liquid treating material and a heat exchanger formed by a spiral pipe and provided in the tank. A nitrogen gas (N.sub.2 gas) is introduced into the tank and evaporates the liquid treating material. Water is supplied from a fluid inlet pipe connected to the lower portion of the exchanger to a fluid outlet pipe connected to the upper portion of the exchanger through the spiral pipe of the exchanger. In the heat exchange, heat exchange between the water and the liquid treating material is performed very efficiently. No use of electric power provides high safety. The temperature of the liquid treating material which is changed into a gas state by a bubbling process is controlled efficiently and the density of the vaporized treating material in the tank is made stable.

摘要翻译： 一种用于将处理材料供给到处理装置的装置具有容纳液体处理材料的容器和由螺旋管形成的热交换器并设置在罐中。 将氮气（N 2气）引入罐中并蒸发液体处理材料。 水从连接到交换器下部的流体入口管供给到通过交换器的螺旋管连接到交换器的上部的流体出口管。 在热交换中，水和液体处理材料之间的热交换非常有效地进行。 不使用电力提供高安全性。 有效地控制通过鼓泡处理而变为气态的液体处理材料的温度，使罐内的汽化处理材料的密度稳定。

公开(公告)号：US5061144A

公开(公告)日：1991-10-29

申请号：US442535

申请日：1989-11-28

申请人： Masami Akimoto ,  Yoshio Kimura ,  Osamu Hirakawa ,  Noriyuki Anai ,  Masanori Tateyama ,  Yasuhiro Sakamoto

发明人： Masami Akimoto ,  Yoshio Kimura ,  Osamu Hirakawa ,  Noriyuki Anai ,  Masanori Tateyama ,  Yasuhiro Sakamoto

IPC分类号： G03F7/26 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/68707 ,  G03F7/26 ,  H01L21/67778 ,  Y10S414/135 ,  Y10S414/137

摘要： A resist process apparatus of the invention serves to load/unload a semiconductor wafer in/from the respective process mechanisms. The apparatus includes a wafer holding member for holding a semiconductor wafer, and X, Y, Z and .theta. driving mechanisms for conveying the wafer holding member to a resist coating mechanism and the like. The wafer holding member includes a support frame which is larger than diameter of a semiconductor wafer, and a plurality of support members, arranged on the support frame, for supporting the semiconductor wafer in partial contact with the peripheral portion of the semiconductor wafer. Since the contact area between the support members and a semiconductor wafer is small, changes in temperature of the semiconductor, when it is held, are small.

摘要翻译： 本发明的抗蚀剂处理装置用于在各个加工机构中加载/卸载半导体晶片。 该装置包括用于保持半导体晶片的晶片保持构件和用于将晶片保持构件输送到抗蚀剂涂覆机构等的X，Y，Z和θ驱动机构。 晶片保持构件包括比半导体晶片的直径大的支撑框架和布置在支撑框架上的多个支撑构件，用于支撑半导体晶片与半导体晶片的周边部分部分接触。 由于支撑构件和半导体晶片之间的接触面积小，因此在保持时半导体的温度变化小。

公开(公告)号：US5026222A

公开(公告)日：1991-06-25

申请号：US490385

申请日：1990-03-08

申请人： Satoshi Kawano ,  Yoshio Kimura ,  Eiji Fukushima

发明人： Satoshi Kawano ,  Yoshio Kimura ,  Eiji Fukushima

IPC分类号： B23B31/10 ,  B23B33/00 ,  B23Q3/18

CPC分类号： B23B33/00 ,  Y10T279/19 ,  Y10T409/30868 ,  Y10T409/309016

摘要： A pin for use in a chuck for clamping a discoid portion of a workpiece, the chuck including a base, at least to fixed clamps secured on a front end surface of the base, a movable clamp adjacent to the front end surface of the base and the pin secured to the front end surface of the base. The pin is adapted to fit in a hole formed in a discoid when the discoid is mounted on the chuck wherein the hole has a larger diameter than the pin. The pin has generally rhombic transversed section with a long diagonal and a short diagonal. The pin is truncated by a predetermined amount at each end along the long diagonal to allow the workpiece to move a limited distance relative to the pin along a line formed by the short diagonal. The limited distance may be a function of an initial clearance between the discoid portion and the chuck or a function or a variation between the diameter of the discoid portion and its design diameter, or a function of both. In the preferred embodiment, the predetermined amount truncated from each end of the pin is a function of 1/2 the difference between the long diagonal and the square root of the difference between the long diagonal squared and the limited distance squared.

公开(公告)号：US4963186A

公开(公告)日：1990-10-16

申请号：US239655

申请日：1988-09-02

申请人： Masataka Shimizu ,  Ryuichi Hori ,  Yoshio Kimura ,  Fumio Noma ,  Mitsutoshi Isobe ,  Tsunao Kamijo ,  Shinichi Inaba

发明人： Masataka Shimizu ,  Ryuichi Hori ,  Yoshio Kimura ,  Fumio Noma ,  Mitsutoshi Isobe ,  Tsunao Kamijo ,  Shinichi Inaba

IPC分类号： C21B5/00

CPC分类号： C21B5/008

摘要： Disclosed herein is a method for operating blast furnace, wherein, when charging coke and ore alternately from the furnace top to form alternate coke and ore layers for operation of a blast furnace, a coke layer is formed by charging coke of properties especially suitable for improvement of gas and liquid permeability of the coke layer to the central part thereof or an ore layer is formed by charging ordinary versatile type coke to the central part of the ore layer prior to formation thereof. The centrally charged coke forms a major part of the dead coke layer which is sequentially renewed under the cohesive zone of the blast furnace to maintain appropriate gas and liquid permeability of the dead coke layer, thereby enhancing the production efficiency and stability of the blast furnace operation while suppressing erosive wear of refractory walls of the furnace.

公开(公告)号：US4629582A

公开(公告)日：1986-12-16

申请号：US693317

申请日：1985-01-22

申请人： Kenji Terashima ,  Yoshio Kimura ,  Masao Asada ,  Satoshi Sugano

发明人： Kenji Terashima ,  Yoshio Kimura ,  Masao Asada ,  Satoshi Sugano

IPC分类号： C09K11/08 ,  C09K11/77 ,  C09K11/81 ,  C09K11/82 ,  H01J61/44

CPC分类号： C09K11/7774 ,  C09K11/7777

摘要： A green-emitting phosphor is activated by cerium and terbium and is represented by the general formula:(Re.sub.1-a-b-3c Tb.sub.a Ce.sub.b A.sub.3c).sub.2 O.sub.3.mP.sub.2 O.sub.5.nSiO.sub.2wherein Re is at least one member selected from the group consisting of yttrium, lanthanum, and gadolinium; A is at least one member selected from the group consisting of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and cesium (Cs); and a>0, b>0, c>0, 0 0, and n>0.The green-emitting phosphor of the invention may be widely applied to fluorescent lamps for copying machine light sources, or high luminous efficacy and high color rendering property fluorescent lamps such as three peak emission system fluorescent lamps.

摘要翻译： PCT No.PCT / JP82 / 00229 Sec。 371日期1983年2月14日 102（e）日期1983年2月14日PCT Filed 1982年6月16日PCT公布。 公开号WO82 / 04438 日期为1982年12月23日。绿色发光荧光体由铈和铽活化，由通式表示：（Re1-ab-3cTbaCebA3c）2O3.mP2O5.nSiO2其中Re为选自以下的至少一种： 的钇，镧和钆; A是选自锂（Li），钠（Na），钾（K），铷（Rb）和铯（Cs）中的至少一种; a> 0，b> 0，c> 0,0 = 5×10-2，m> 0，n> 0。 本发明的绿色荧光体可以广泛地应用于复印机光源的荧光灯，或高发光效率的荧光灯，以及三峰发光系统荧光灯等高显色性荧光灯。

公开(公告)号：US20130216698A1

公开(公告)日：2013-08-22

申请号：US13881080

申请日：2011-04-08

申请人： Fukutaro Kato ,  Eiichi Nagao ,  Tsuyoshi Amimoto ,  Yoshio Kimura ,  Noboru Hosokawa ,  Junji Tanimura ,  Satoru Toyama

发明人： Fukutaro Kato ,  Eiichi Nagao ,  Tsuyoshi Amimoto ,  Yoshio Kimura ,  Noboru Hosokawa ,  Junji Tanimura ,  Satoru Toyama

IPC分类号： H01F41/00 ,  H01B3/20 ,  B05D5/00

CPC分类号： H01F41/005 ,  B05D5/00 ,  H01B3/20 ,  H01F27/12

摘要： The present invention provides a method for inhibiting production of copper sulfide in an electrical insulating oil inside an oil-filled electrical apparatus, including adding a benzotriazole compound not having a long-chain alkyl group when the oil-filled electrical apparatus is an open-type oil-filled electrical apparatus, or adding a benzotriazole compound having a long-chain alkyl group when the oil-filled electrical apparatus is a closed-type oil-filled electrical apparatus.

摘要翻译： 本发明提供了一种用于在充油电气设备内的电绝缘油中抑制硫化铜的生产的方法，包括在充油电气设备是开放型的情况下加入不具有长链烷基的苯并三唑化合物 充油电气设备，或者当充油电气设备是闭式充油电气设备时，加入具有长链烷基的苯并三唑化合物。

公开(公告)号：US08408158B2

公开(公告)日：2013-04-02

申请号：US11276662

申请日：2006-03-09

申请人： Masami Akimoto ,  Shinichi Hayashi ,  Yasushi Hayashida ,  Nobuaki Matsuoka ,  Yoshio Kimura ,  Issei Ueda ,  Hikaru Ito

发明人： Masami Akimoto ,  Shinichi Hayashi ,  Yasushi Hayashida ,  Nobuaki Matsuoka ,  Yoshio Kimura ,  Issei Ueda ,  Hikaru Ito

IPC分类号： B05C11/10 ,  G03D15/02 ,  G03D5/04

CPC分类号： H01L21/67742 ,  G03F7/162 ,  H01L21/6715 ,  H01L21/67173 ,  H01L21/67178

摘要： A coating/developing device includes a processing block having a plurality of coating unit blocks stacked and a developing unit block stacked on the coating unit blocks. Each of the unit blocks is provided with a liquid processing unit for coating a liquid chemical on a substrate, a heating unit for heating the substrate, a cooling unit for cooling the substrate and a transfer unit for transferring the substrate between the units. The liquid processing unit is provided with a coating unit for coating a resist liquid on the substrate, a first bottom antireflection coating (BARC) forming unit for coating a liquid chemical for a BARC on the substrate before the resist liquid is coated thereon, and a second BARC forming unit for coating a liquid chemical for the BARC on the substrate after the resist liquid is coated thereon.

摘要翻译： 涂覆/显影装置包括具有堆叠的多个涂布单元块的处理块和堆叠在涂布单元块上的显影单元块。 每个单元块设置有用于在基板上涂覆液体化学品的液体处理单元，用于加热基板的加热单元，用于冷却基板的冷却单元和用于在单元之间转移基板的转移单元。 液体处理单元设置有用于在基板上涂覆抗蚀剂液体的涂布单元，在其上涂覆抗蚀剂液体之前，在基板上涂布用于BARC的液体化学品的第一底部抗反射涂层（BARC）形成单元，以及 第二BARC形成单元，用于在其上涂覆抗蚀剂液体之后，在基板上涂覆用于BARC的液体化学品。

公开(公告)号：US08302556B2

公开(公告)日：2012-11-06

申请号：US12855534

申请日：2010-08-12

申请人： Masami Akimoto ,  Shinichi Hayashi ,  Yasushi Hayashida ,  Nobuaki Matsuoka ,  Yoshio Kimura ,  Issei Ueda ,  Hikaru Ito

发明人： Masami Akimoto ,  Shinichi Hayashi ,  Yasushi Hayashida ,  Nobuaki Matsuoka ,  Yoshio Kimura ,  Issei Ueda ,  Hikaru Ito

IPC分类号： B05C5/02 ,  B05C11/02

CPC分类号： H01L21/67184 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/67745

摘要： Provided is a coating and developing apparatus composed of an assembly of plural unit blocks. A first unit-block stack and a second unit-block stack are arranged at different positions with respect to front-and-rear direction. Unit blocks for development, each of which comprises plural processing units including a developing unit that performs developing process after exposure and a transfer device that transfers a substrate among the processing units, are arranged at the lowermost level. Unit blocks for application, or coating, each of which comprises plural processing units including a coating unit that performs application process before exposure and a transfer device that transfers a substrate among the processing units, are arranged above the unit blocks for development. Unit blocks for application are arranged in both the first and second unit-block stacks. Unit blocks for application which a wafer goes through are determined depending on the layering positional relationship between an antireflective film and a resist film. An exposed wafer goes only through the unit block for development without going through any one of the unit blocks for application.

摘要翻译： 提供一种由多个单元块组成的涂层显影装置。 第一单位块堆叠和第二单位块堆叠被布置在相对于前后方向的不同位置。 用于显影的单元块，每个包括多个处理单元，包括执行曝光之后的显影处理的显影单元和在处理单元之间传送基板的转印装置布置在最下层。 用于应用或涂布的单元块包括多个处理单元，其包括在曝光之前进行施加处理的涂覆单元和在处理单元之间传送基板的转印装置，布置在用于显影的单位块上方。 用于应用的单元块被布置在第一和第二单元块堆叠中。 根据防反射膜和抗蚀剂膜之间的层叠位置关系确定晶片通过的应用单元块。 暴露的晶片仅通过单元块进行开发，而不经过用于应用的单元块中的任何一个。

公开(公告)号：US08231285B2

公开(公告)日：2012-07-31

申请号：US12610907

申请日：2009-11-02

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B27/53

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

摘要翻译： 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个 选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。 基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。 这导致操作者的工作量减少，并且可以执行适当的修改。