公开(公告)号：US20080211044A1

公开(公告)日：2008-09-04

申请号：US12071513

申请日：2008-02-21

申请人： Tamotsu Akashi ,  Tsuyoshi Yamamoto

发明人： Tamotsu Akashi ,  Tsuyoshi Yamamoto

IPC分类号： H01L29/84

CPC分类号： B81B3/0078 ,  B81B2201/042 ,  B81B2201/045 ,  B81B2203/0109 ,  G02B26/0833

摘要： According to an aspect of an embodiment, a micro-electro-mechanical systems (MEMS) device comprises a substrate, a MEMS and a movable absorber.The MEMS has a movable part having a resonance frequency on the substrate. The movable absorber absorbs a vibration in accordance with the resonance frequency so as to vibrate itself.

摘要翻译： 根据实施例的一个方面，微电子机械系统（MEMS）装置包括衬底，MEMS和可移动吸收体。 MEMS具有在基板上具有共振频率的可移动部分。 可移动吸收体根据谐振频率吸收振动，以便自身振动。

公开(公告)号：US20080157059A1

公开(公告)日：2008-07-03

申请号：US11976120

申请日：2007-10-22

申请人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

IPC分类号： H01S5/34 ,  H01L33/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/06226 ,  H01S5/0655 ,  H01S5/3086 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34353 ,  H01S2301/18

摘要： An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.

摘要翻译： 具有p型量子点结构的有源层设置在由第一导电类型的半导体材料制成的下包层上。 上覆层设置在有源层上。 上包层由半导体材料制成，并且包括脊部和盖部。 脊部沿一个方向延伸，并且盖部分覆盖脊部两侧的表面。 电容减小区域设置在脊部的两侧并且至少到达盖部的下表面。 电容减小区域具有比脊部分的第一导电类型或更高的电阻率，并且脊部分具有第二导电类型。 如果下包层为n型，则电容减小区域至少到达下包层的上表面。

公开(公告)号：US20080080573A1

公开(公告)日：2008-04-03

申请号：US11902622

申请日：2007-09-24

申请人： Kenichi Kawaguchi ,  Tsuyoshi Yamamoto

发明人： Kenichi Kawaguchi ,  Tsuyoshi Yamamoto

IPC分类号： H01S5/06 ,  H01L33/00 ,  H01S5/026

CPC分类号： H01S5/18341 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/3027 ,  H01S5/3036 ,  H01S5/3412 ,  H01S2304/04

摘要： Disclosed is a semiconductor laser device capable of realizing efficient current injection and a method of manufacturing the same. The method includes the steps of: forming a DBR mirror over a Si substrate; forming an n-type conductive layer over the DBR mirror; forming a luminescent layer over a part of the n-type conductive layer; forming an insulating layer over a side surface of the luminescent layer over the n-type conductive layer; forming a p-type conductive layer over the insulating layer and the luminescent layer; forming another DBR mirror over the p-type conductive layer so as to be located immediately above the luminescent layer; forming an electrode electrically connected to the n-type conductive layer; and forming another electrode over the p-type conductive layer.

摘要翻译： 公开了能够实现高效电流注入的半导体激光装置及其制造方法。 该方法包括以下步骤：在Si衬底上形成DBR镜; 在DBR镜上形成n型导电层; 在n型导电层的一部分上形成发光层; 在所述n型导电层的上方在所述发光层的侧面上形成绝缘层; 在绝缘层和发光层上形成p型导体层; 在p型导电层上形成另一个DBR镜，以便位于发光层的正上方; 形成与n型导电层电连接的电极; 并在p型导电层上形成另一电极。

公开(公告)号：US07330617B2

公开(公告)日：2008-02-12

申请号：US11320973

申请日：2005-12-30

申请人： Hirofumi Aota ,  Kohei Shibata ,  Tamotsu Akashi ,  Shinji Yamashita ,  Tsuyoshi Yamamoto ,  Shinichi Takeuchi ,  Yoshinobu Kubota ,  Nobuhiro Fukushima ,  Hiroyuki Furukawa ,  Toshiya Kishida

发明人： Hirofumi Aota ,  Kohei Shibata ,  Tamotsu Akashi ,  Shinji Yamashita ,  Tsuyoshi Yamamoto ,  Shinichi Takeuchi ,  Yoshinobu Kubota ,  Nobuhiro Fukushima ,  Hiroyuki Furukawa ,  Toshiya Kishida

IPC分类号： G02B6/26

CPC分类号： G02B6/29395 ,  G02B6/2931 ,  G02B6/29313 ,  G02B6/3512 ,  G02B6/4215

摘要： A wavelength selective optical switch of the present invention separates a WDM light emitted from an input port of an input and output optical system, according to wavelengths, by a diffraction grating, and thereafter, condenses the lights of respective wavelengths on MEMS mirrors respectively corresponding to the respective wavelengths, in a mirror array, to reflect them by a condenser optical system, to thereby switch optical paths for the respective lights. The condenser optical system is configured by combining a plurality of lenses whose focal distances are different from each other, and positions in an optical axis direction of the lenses are adjustable by a slide mechanism. Thus, despite an error in the focal distances of the condenser lenses, in a mounting angle of a spectral element or the like, a beam pitch at the condensing positions of the lights of respective wavelengths can be coincident with a mirror pitch in the mirror array.

摘要翻译： 本发明的波长选择性光开关根据波长通过衍射光栅分离从输入和输出光学系统的输入端口发射的WDM光，然后将分别对应于 反射镜阵列中的各个波长通过聚光器光学系统反射，从而切换各个光的光路。 聚光器系统通过组合焦距彼此不同的多个透镜来构成，透镜的光轴方向的位置通过滑动机构来调节。 因此，尽管聚光透镜的焦距存在误差，但是在光谱元件等的安装角度，各波长的光的聚光位置处的光束间距可以与镜阵列中的镜间距一致 。

公开(公告)号：US07330616B2

公开(公告)日：2008-02-12

申请号：US10952761

申请日：2004-09-30

申请人： Tsuyoshi Yamamoto ,  Shinichi Takeuchi

发明人： Tsuyoshi Yamamoto ,  Shinichi Takeuchi

IPC分类号： G02B6/35

CPC分类号： G02B6/3588 ,  G02B5/08 ,  G02B6/3518 ,  G02B6/3546 ,  G02B6/3556 ,  G02B6/356 ,  G02B26/0841 ,  H04Q11/0005 ,  H04Q2011/0039 ,  H04Q2011/0083

摘要： A micromirror element is configured such that a mirror body is arranged via a support on a wiring substrate on which a pair of mirror drive electrodes and a light detection unit are arranged. A mirror is constituted of a mirror frame and a movable mirror swayably supported by the mirror frame. A light transmitting hole is formed at the center of the movable mirror. Light passing through the light transmitting hole is detected by the light detection device.

摘要翻译： 微镜元件被构造成使得镜体经由支撑件布置在其上布置有一对镜驱动电极和光检测单元的布线基板上。 镜子由镜框和由镜框支撑的活动镜构成。 透光孔形成在可动镜的中心。 由光检测装置检测出通过透光孔的光。

公开(公告)号：US07310429B2

公开(公告)日：2007-12-18

申请号：US10531584

申请日：2003-10-28

申请人： Naofumi Aoki ,  Hideaki Tamori ,  Tsuyoshi Yamamoto

发明人： Naofumi Aoki ,  Hideaki Tamori ,  Tsuyoshi Yamamoto

IPC分类号： G06K9/00

CPC分类号： G06T1/0042 ,  G06T2201/0051 ,  G06T2201/0052 ,  G06T2201/0061 ,  H04N1/32144 ,  H04N1/32154 ,  H04N1/32331

摘要： A false alteration detecting method using an electronic watermark method of fragile type by number theoretic transform. A processing section sets parameters P, N, α of number theoretic transform (S101), and reads original image blocks fi,j(x,y) (S103), conducts number theoretic transform of fi,j(x,y) to calculate the number theoretic transform blocks Fi,j(x,y) (S105), determines the position (x′,y′) at which a signature image is to be embedded by using a randomizing function (S107), reads pixel values gi,j of the signature image for embedment from a storage section (S109), determines the embedment value δ of each block from the Fi,j(x′,y′) of the embedment position and gi,j (S111), adds the embedment value δ to the Fi,j(x,y) or subtracts the embedment value δ from the Fi,j(x,y) to determine the number theoretic transform blocks Hi,j(x,y) of the embedded image block (S113), calculates the inverse number theoretic transform of the Hi,j(x,y), determines the embedded image blocks hi,j(x,y), stores them, and outputs them to an output section.

摘要翻译： 一种使用数字理论变换的脆弱型电子水印方法的虚假变更检测方法。 处理部分设定数理论变换的参数P，N，α（S 101），并且读取原始图像块f i，j（x，y）（S103），进行数理论变换 （x，y），以计算数理论变换块F i，j（x，y）（S105），确定位置（x' ，y'），通过使用随机化函数来嵌入签名图像（S107），从存储部读取用于嵌入的签名图像的像素值g i，j， ），从嵌入位置的F i，j（x'，y'）确定每个块的嵌入值增量，并且g i，j（S 111） 将嵌入值增量添加到F i，j（x，y），或从F i i，j（x，y）中减去嵌入值增量以确定 嵌入图像块的数理论变换块H i，j（x，y）计算H i，j i，j（x，y）的倒数理论变换， （x，y），确定嵌入的im （x，y）存储它们，并将它们输出到输出部分。

公开(公告)号：US07307313B2

公开(公告)日：2007-12-11

申请号：US11206212

申请日：2005-08-18

申请人： Takasumi Ohyanagi ,  Atsuo Watanabe ,  Toshio Sakakibara ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura ,  Rajesh Kumar Malhan

发明人： Takasumi Ohyanagi ,  Atsuo Watanabe ,  Toshio Sakakibara ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura ,  Rajesh Kumar Malhan

IPC分类号： H01L29/76

CPC分类号： H01L29/1066 ,  H01L29/7722 ,  H01L29/8083

摘要： A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface of the semiconductor, control regions of a second conductivity type formed respectively along the first trenches, a source region of the first conductivity type formed along the second surface of the semiconductor between the first trenches, a source electrode joined to the source region, and a gate electrode adjacent to the control regions, (b) a pair of second trenches formed from the second surface of the semiconductor independently of the field effect transistor, (c) control regions of the second conductivity type formed along the second trenches, and (d) a diode having a junction formed on the second surface between the second trenches.

摘要翻译： 半导体器件包括（a）垂直场效应晶体管，垂直场效应晶体管包括形成在第一导电类型的半导体的第一表面上的漏电极，由半导体的第二表面形成的一对第一沟槽， 沿着第一沟槽分别形成的第二导电类型的控制区域，沿着第一沟槽之间的半导体的第二表面形成的第一导电类型的源极区域，与源极区域连接的源极电极和与源极区域相邻的栅电极 控制区域，（b）与场效应晶体管独立地由半导体的第二表面形成的一对第二沟槽，（c）沿着第二沟槽形成的第二导电类型的控制区，以及（d）二极管， 在第二沟槽之间的第二表面上形成的结。

公开(公告)号：US20070110453A1

公开(公告)日：2007-05-17

申请号：US11364054

申请日：2006-03-01

申请人： Suguru Akiyama ,  Tsuyoshi Yamamoto

发明人： Suguru Akiyama ,  Tsuyoshi Yamamoto

IPC分类号： H04B10/04

CPC分类号： H04B10/58 ,  G02B6/12004 ,  G02B6/12007 ,  G02F1/3519 ,  H01S5/0078 ,  H04B10/25 ,  H04B10/503 ,  H04B10/504

摘要： In an optical transmitter comprising a directly modulated laser and a wavelength filter provided on a post-stage of the directly modulated laser, the wavelength filter has a modulated light input port for inputting modulated light output from the directly modulated laser, a filter transmitted light output port for outputting light having a wavelength included in a filter transmission band among the modulated light as filter transmitted light, and a filter cutoff light output port provided separately from the modulated light input port and the filter transmitted light output port and outputting light having a wavelength included in a filter cutoff band among the modulated light as filter cutoff light, and the peak of the filter transmission band is set on a shorter-wave side from the peak of the spectrum of modulated light output from the directly modulated laser.

摘要翻译： 在包括直接调制激光器和设置在直接调制激光器的后级上的波长滤波器的光发射机中，波长滤波器具有用于输入从直接调制的激光器输出的调制光的调制光输入端口，滤波器透射光输出 用于输出调制光中包括在滤波器传输频带中的波长的光作为滤波器透射光的端口，以及与调制光输入端口和滤光透射光输出端口分离设置的滤光器截止光输出端口，并输出具有波长 被包含在作为滤波器截止光的调制光中的滤波器截止频带中，并且滤波器传输频带的峰值被设置在从直接调制的激光器输出的调制光谱的峰值的较短波侧。

公开(公告)号：US20060266806A1

公开(公告)日：2006-11-30

申请号：US11208552

申请日：2005-08-23

申请人： Tsuyoshi Yamamoto ,  Akiomi Hiruma ,  Fumigi Koyama

发明人： Tsuyoshi Yamamoto ,  Akiomi Hiruma ,  Fumigi Koyama

IPC分类号： B23K1/20 ,  B23K5/00 ,  B23K35/38

CPC分类号： H05K3/3494 ,  H01L24/98 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H05K1/0201 ,  H05K3/284 ,  H05K3/288 ,  H05K2201/062 ,  H05K2203/0126 ,  H05K2203/176 ,  H05K2203/304

摘要： A soldering method for soldering an electronic part on a substrate by reflow soldering is disclosed that includes the steps of applying a solder paste on the substrate; mounting the electronic part on the substrate by using the solder paste; disposing a heat capacity enhancing member on the electronic part, the heat capacity enhancing member including a gel-like material able to enhance the heat capacity of the electronic part; and soldering the electronic part onto the substrate by reflow soldering with the heat capacity enhancing member being applied thereon.

摘要翻译： 公开了一种通过回流焊接将电子部件焊接在基板上的焊接方法，其包括在基板上涂敷焊膏的工序; 通过使用焊膏将电子部件安装在基板上; 在电子部件上设置热容量增强部件，该热容增强部件包括能够提高电子部件的热容量的凝胶状材料; 以及通过在其上施加热容增强部件的回流焊将电子部件焊接到基板上。

公开(公告)号：US20060239607A1

公开(公告)日：2006-10-26

申请号：US11473117

申请日：2006-06-23

申请人： Tsuyoshi Yamamoto ,  Shinji Taniguchi

发明人： Tsuyoshi Yamamoto ,  Shinji Taniguchi

IPC分类号： G02B6/26 ,  G02B6/34 ,  G02B27/14

CPC分类号： G02B6/2713 ,  G02B6/272 ,  G02B6/2766 ,  G02B6/2931 ,  G02B6/29311 ,  G02B6/29358 ,  H04Q11/0005 ,  H04Q2011/0015 ,  H04Q2011/0026 ,  H04Q2011/0035

摘要： A wavelength selector switch includes first and second refracting plates, an optical splitter, first and second optical systems, an optical coupler polarization controller, and second refracting plate. The first refracting plate refracts the second wavelength-multiplexed light beam. The optical splitter spatially splits into a plurality of wavelength components light beams. The first optical system changes the wavelength components into parallel light beams. The polarization controller selectively changes a polarization angle of each of the parallel light beams. The second optical system condenses the parallel light beams. The optical coupler multiplexes into a third wavelength-multiplexed light beam the parallel light beams condensed. The second refracting plate directs wavelength components of the third wavelength-multiplexed light beam to the first and second optical output ports depending on their polarization angles.

摘要翻译： 波长选择开关包括第一和第二折射板，光分路器，第一和第二光学系统，光耦合器偏振控制器和第二折射板。 第一折射板折射第二波长复用光束。 光分路器在空间上分裂成多个波长分量光束。 第一光学系统将波长分量改变为平行光束。 偏振控制器选择性地改变每个平行光束的偏振角。 第二光学系统凝结平行光束。 光耦合器将平行光束聚光到第三波长复用光束中。 第二折射板根据其偏振角将第三波长复用光束的波长成分引导到第一和第二光输出端口。