Solid-state imaging device and portable information terminal
    41.
    发明授权
    Solid-state imaging device and portable information terminal 有权
    固态成像装置和便携式信息终端

    公开(公告)号:US08681249B2

    公开(公告)日:2014-03-25

    申请号:US13221097

    申请日:2011-08-30

    IPC分类号: H04N9/64 H04N5/225

    CPC分类号: H04N5/232

    摘要: A solid-state imaging device according to an embodiment includes: a first optical system configured to form an image of an object on an image formation plane; an imaging element comprising an imaging area which includes a plurality of pixel blocks each including a plurality of pixels; a second optical system configured to include a microlens array including a plurality of microlenses provided to correspond to the plurality of pixel blocks and reduce and re-form an image scheduled to be formed on the image formation plane, in a pixel block corresponding to an individual microlens; and a signal processing unit configured to perform image signal processing with an optical position relation between each microlens and the pixel block corrected, by using an image signal of the object obtained by the imaging element.

    摘要翻译: 根据实施例的固态成像装置包括:第一光学系统,被配置为在图像形成平面上形成对象的图像; 成像元件包括:成像区域,其包括多个像素块,每个像素块包括多个像素; 第二光学系统,被配置为包括微透镜阵列,所述微透镜阵列包括多个微透镜,所述微透镜提供为对应于所述多个像素块,并且在对应于个体的像素块中减少并重新形成被调度以形成在所述图像形成平面上的图像 微透镜 以及信号处理单元,被配置为通过使用由所述成像元件获得的所述对象的图像信号,通过校正的每个微透镜与所述像素块之间的光学位置关系来执行图像信号处理。

    UNCOOLED INFRARED IMAGING DEVICE
    42.
    发明申请
    UNCOOLED INFRARED IMAGING DEVICE 审中-公开
    未经处理的红外成像装置

    公开(公告)号:US20130248714A1

    公开(公告)日:2013-09-26

    申请号:US13728009

    申请日:2012-12-27

    IPC分类号: H01L27/146 G01J5/20

    摘要: An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.

    摘要翻译: 根据实施例的非冷却红外成像装置包括:形成在半导体衬底上并布置在至少一行中的参考像素; 以及布置在其余行中的红外检测像素,并检测入射的红外线。 每个参考像素包括位于第一凹部上方的第一单元。 第一电池包括具有第一红外线吸收膜的第一热电转换单元; 和第一热电转换元件。 每个红外检测像素包括位于第二凹部上方的第二单元,并且具有比第一单元更大的面积。 第二单元包括:位于第二凹部上方的第二热电转换单元; 以及第一和第二支撑结构单元,其在第二凹部上方支撑第二热电转换单元。 第二热电转换单元包括:第二红外线吸收膜; 和第二热电转换元件。

    Semiconductor memory and method of manufacturing the same
    43.
    发明授权
    Semiconductor memory and method of manufacturing the same 有权
    半导体存储器及其制造方法

    公开(公告)号:US08410545B2

    公开(公告)日:2013-04-02

    申请号:US12710172

    申请日:2010-02-22

    IPC分类号: H01L29/66

    摘要: A semiconductor memory includes a semiconductor substrate, a buried insulating film formed on a part of an upper surface of the semiconductor substrate, and a semiconductor layer formed on another part of the upper surface of the semiconductor substrate. Each of the memory cell transistors comprises a first-conductivity-type source region, a first-conductivity-type drain region, and a first-conductivity-type channel region arranged in the semiconductor layer in the column direction, and a gate portion formed on a side surface of the channel region in the row direction.

    摘要翻译: 半导体存储器包括半导体衬底,形成在半导体衬底的上表面的一部分上的埋入绝缘膜和形成在半导体衬底的上表面的另一部分上的半导体层。 每个存储单元晶体管包括在列方向上布置在半导体层中的第一导电类型源极区,第一导电型漏极区和第一导电类型沟道区,以及形成在 沟道区域的行方向的侧面。

    SOLID-STATE IMAGING DEVICE
    45.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号:US20120062771A1

    公开(公告)日:2012-03-15

    申请号:US13039504

    申请日:2011-03-03

    IPC分类号: H04N5/335

    CPC分类号: H04N13/218 H04N13/232

    摘要: In one embodiment, a solid-state imaging device includes: an imaging optical system including: a first and second surfaces facing each other; a flat reflector provided on the first surface and having an aperture in an outer circumferential portion; and a plurality of reflectors provided on the second surface and located in a plurality of ring-like areas, each of the reflectors being inclined in a radial direction, the reflectors having different diameters from one another; and an imaging element module including: an imaging element including an imaging area having a plurality of pixel blocks each including a plurality of pixels, and receiving and converting light from the imaging optical system into image data; a visible light transmission substrate provided between the imaging optical system and the imaging element; a microlens array provided on a surface of the visible light transmission substrate on the imaging element side; and an image processing unit processing the image data obtained by the imaging element.

    摘要翻译: 在一个实施例中,固态成像装置包括:成像光学系统,包括:彼此面对的第一和第二表面; 设置在第一表面上并在外圆周部分具有孔的平面反射器; 以及设置在所述第二表面上并且位于多个环状区域中的多个反射器,每个所述反射器在径向方向上倾斜,所述反射器彼此具有不同的直径; 以及成像元件模块,包括:成像元件,包括具有多个像素块的成像区域,每个像素块包括多个像素,并且将来自所述成像光学系统的光接收并转换为图像数据; 设置在所述摄像光学系统和所述摄像元件之间的可见光透射基板; 设置在所述可见光透射基板的所述摄像元件侧的表面上的微透镜阵列; 以及图像处理单元,处理由所述成像元件获得的图像数据。

    SOLID-STATE IMAGING ELEMENT
    46.
    发明申请
    SOLID-STATE IMAGING ELEMENT 有权
    固态成像元件

    公开(公告)号:US20110226953A1

    公开(公告)日:2011-09-22

    申请号:US13052903

    申请日:2011-03-21

    IPC分类号: G01J5/12 G01J5/20

    摘要: It is possible to quickly and readily determine the location of an object. A solid-state imaging element according to an embodiment includes: at least two infrared detectors formed on a semiconductor substrate; an electric interconnect configured to connect the at least two infrared detectors in series; and a comparator unit configured to compare an intermediate voltage of the electric interconnect connecting the infrared detectors in series, with a predetermined reference voltage.

    摘要翻译: 可以快速,容易地确定对象的位置。 根据实施例的固态成像元件包括:形成在半导体衬底上的至少两个红外检测器; 配置为串联连接所述至少两个红外检测器的电互连; 以及比较器单元,被配置为将连接红外线检测器的电气互连串联的中间电压与预定的参考电压进行比较。

    INFRARED SOLID-STATE IMAGE SENSOR
    47.
    发明申请
    INFRARED SOLID-STATE IMAGE SENSOR 有权
    红外固态图像传感器

    公开(公告)号:US20100230594A1

    公开(公告)日:2010-09-16

    申请号:US12709759

    申请日:2010-02-22

    IPC分类号: H01L27/146

    摘要: An infrared solid-state image sensor comprises: a pixel area comprising a sensitive pixel area where infrared detection pixels are arranged in a matrix form to detect incident infrared rays on the semiconductor substrate and a reference pixel area where reference pixels are provided, each of the infrared detection pixels comprising a thermoelectric conversion part, the thermoelectric conversion part comprising an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a first thermoelectric conversion element to convert the heat obtained by the conversion in the infrared absorption film to a electric signal, each of the reference pixels comprising a second thermoelectric conversion element. Each of first ends of the reference pixels are connected to a reference potential line, and a difference between the signal potential read out from a corresponding signal line and a reference potential supplied from the reference potential line is amplified and outputted.

    摘要翻译: 一种红外固态图像传感器包括:像素区域,包括敏感像素区域,其中红外检测像素以矩阵形式布置以检测半导体衬底上的入射红外线和参考像素的参考像素区域, 红外线检测像素包括热电转换部分,该热电转换部分包括用于吸收入射的红外线并将入射的红外线转换成热的红外线吸收膜和第一热电转换元件,以将通过红外吸收中的转换获得的热量转换 每个参考像素包括第二热电转换元件。 参考像素的每个第一端连接到参考电位线,并且从相应的信号线读出的信号电位与从参考电位线提供的参考电位之间的差放大并输出。

    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
    48.
    发明申请
    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权
    图像传感器及其制造方法

    公开(公告)号:US20100025584A1

    公开(公告)日:2010-02-04

    申请号:US12508846

    申请日:2009-07-24

    IPC分类号: H01L31/02 H01L31/00

    摘要: An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

    摘要翻译: 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方,第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件,支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素,而不经由空腔,其中多个第一像素和多个第二像素被二维布置以形成像素区域,并且每个第二像素与 第一个像素。

    INFRARED RAY SENSOR ELEMENT
    49.
    发明申请
    INFRARED RAY SENSOR ELEMENT 审中-公开
    红外辐射传感器元件

    公开(公告)号:US20090236526A1

    公开(公告)日:2009-09-24

    申请号:US12405497

    申请日:2009-03-17

    IPC分类号: H01L27/14

    摘要: An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part.

    摘要翻译: 一种红外线传感器元件包括:第一信号布线部,包括第一信号线,设置在与设置有凹部的区域不同的半导体基板的第一区域上; 第二信号布线部分,包括第二信号线,并设置在第一区域上,以与第一信号布线部分相交; 支撑件,其包括设置在所述凹部上方的支撑布线部,并且包括在其第一端处电连接到所述第一信号线的第一线和与所述第一线平行布置的与所述第一线绝缘的第二线,以及 在其第一端电连接到第二信号线; 电连接到第一和第二导线的第二端的热电换能器; 设置在所述热电换能器上的红外线吸收层; 以及设置在所述凹部上的检测单元。

    Acoustoelectric conversion device
    50.
    发明授权
    Acoustoelectric conversion device 失效
    声电转换装置

    公开(公告)号:US07293463B2

    公开(公告)日:2007-11-13

    申请号:US11116273

    申请日:2005-04-28

    IPC分类号: G01H9/00 G01B11/16

    CPC分类号: G01N29/2418 G01H9/00

    摘要: In an acoustoelectric converter element, a light wave from a light source is introduced into a first optical waveguide of a vibration substrate, and diffracted by a diffraction grating disposed on the first optical waveguide. The diffracted light is directed to and detected by a photo detector. Here, the vibration substrate is so supported as to vibrate with respect to an acoustic wave. Therefore, the diffracted light detected by the photo detector is modulated by the acoustic wave, and a signal is output from the detector in accordance with the acoustic wave.

    摘要翻译: 在声电转换元件中,来自光源的光波被引入到振动基板的第一光波导中,并且被设置在第一光波导上的衍射光栅衍射。 衍射光被光检测器导向并检测。 这里,振动基板被支撑为相对于声波振动。 因此,由光检测器检测的衍射光被声波调制,并且根据声波从检测器输出信号。