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公开(公告)号：US20030168431A1
公开(公告)日：2003-09-11
申请号：US10372140
申请日：2003-02-25
发明人： Hsu Fong Lee , Hsin Tzu Yao , Chung Che Chou , Ming Shih Chung , Tien Sheng Yeh , Chao Chin Wu
IPC分类号： C23F001/00 , B44C001/22 , C03C015/00 , C03C025/68
CPC分类号： C23F1/30 , H01L21/32134 , H01L21/32139
摘要： A series of etchant compositions for silver alloy is disclosed. The etchant composition for silver alloy comprises 1 to 60 weight part(s) of hydrogen peroxide; 1 to 60 weight part(s) of sulfuric acid, nitric acid, or organic acid; and 5 to 90 weight part(s) of water Similar etchant composition for silver alloy is. also disclosed, which comprises. 1 to 60 weight part(s) of ammonium compound; 1 to 60 weight part(s) of hydrogen peroxide; and 0 to 96 weight part(s) of water. The etchant composition for silver alloy of the present invention can: etch silver alloy containing more than 80% of silver with a controlled etching rate selectively and effectively. Moreover, the method for using the foresaid etchant composition for silver alloy to form a patterned silver alloy is also disclosed therewith.
摘要翻译： 公开了一系列用于银合金的蚀刻剂组合物。 银合金蚀刻剂组合物含有1〜60重量份的过氧化氢; 1至60重量份的硫酸，硝酸或有机酸; 和5至90重量份的水类似于银合金的蚀刻剂组成。 也披露，其中包括。 1〜60重量份铵化合物; 1至60重量份过氧化氢; 和0至96重量份的水。 本发明的银合金蚀刻剂组合物可以：选择性且有效地以受控的蚀刻速率蚀刻含有超过80％的银的银合金。 此外，还公开了使用上述银合金的上述蚀刻剂组合物来形成图案化的银合金的方法。
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公开(公告)号：US20030139045A1
公开(公告)日：2003-07-24
申请号：US10350185
申请日：2003-01-24
发明人： Hidemitsu Aoki , Hiroaki Tomimori
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/02074 , C11D3/3955 , C11D3/3956 , C11D7/105 , C11D11/0047 , C23F1/18 , C23F1/30 , H01L21/02087 , H01L21/0209 , H01L21/32134
摘要： The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other metals having a relatively large oxidation-reduction potential.
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公开(公告)号：US20030121891A1
公开(公告)日：2003-07-03
申请号：US10322960
申请日：2002-12-18
IPC分类号： H01L021/302 , H01L021/306
CPC分类号： C23C16/4407 , C22B11/046 , C23F1/30 , H01L21/32134 , Y02P10/214
摘要： A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.
摘要翻译： 一种用于去除包括钌金属和/或二氧化钌在内的诸如层，膜或沉积物的结构的至少一部分的方法包括使结构与包括硝酸铈铵的材料接触。 用于除去钌金属和无定形二氧化钌的材料包括硝酸铈铵，并且可以是包括硝酸铈铵和任选的提供所需性质的其它固体或液体溶质的水溶液的形式。 在一个应用中，可以利用该方法和材料在制造半导体系统及其元件，组件和器件（例如导线，电触头）中蚀刻，形成或图案钌金属和/或二氧化钌的层或膜 ，字线，位线，互连，通孔，电极，电容器，晶体管，二极管和存储器件。
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公开(公告)号：US20030017419A1
公开(公告)日：2003-01-23
申请号：US10245503
申请日：2002-09-18
申请人： Hitachi, Ltd.
发明人： Takuya Futase , Tomonori Saeki , Mieko Kashi
IPC分类号： H01L021/461 , H01L021/31
CPC分类号： C23F1/30 , H01L21/32134 , H01L27/10814 , H01L28/55 , H01L28/60 , Y10S134/902
摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).
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45.发明申请Method and apparatus for cleaning semiconductor device and method of fabricating semiconductor device 失效用于清洁半导体器件的方法和装置及其制造半导体器件的方法公开(公告)号：US20020177310A1
公开(公告)日：2002-11-28
申请号：US09998692
申请日：2001-12-03
IPC分类号： H01L021/20 , B32B009/00 , B32B019/00
CPC分类号： H01L21/02052 , B08B3/02 , C11D3/3947 , C11D7/08 , C11D11/0047 , C23F1/30 , H01L21/67051
摘要： Disclosed is a method for removing Pt (or PtnullIr) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a PtnullIr film, and a BanullSrnullTi film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.
摘要翻译： 公开了一种在半导体晶片的表面边缘，背面和斜面上去除Pt（或Pt-Ir）和BST污染物的方法。 制备其上形成从Pt膜，Pt-Ir膜和Ba-Sr-Ti膜的组中选择的层叠膜的晶片。 含有盐酸的化学物质仅施加于晶片的表面边缘，背面和斜面。 用纯水冲洗晶片的表面边缘，背面和斜面。 此外，应用含有氟化氢的化学物质。 用纯水再次冲洗晶片的表面边缘，背面和斜面。
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公开(公告)号：US20020056697A1
公开(公告)日：2002-05-16
申请号：US09990481
申请日：2001-11-16
IPC分类号： H01G004/00
CPC分类号： C23C16/4407 , C22B11/046 , C23F1/30 , H01L21/32134 , Y02P10/214
摘要： A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.
摘要翻译： 一种用于去除包括钌金属和/或二氧化钌在内的诸如层，膜或沉积物的结构的至少一部分的方法包括使结构与包括硝酸铈铵的材料接触。 用于除去钌金属和无定形二氧化钌的材料包括硝酸铈铵，并且可以是包括硝酸铈铵和任选地提供所需性质的其它固体或液体溶质的水溶液形式。 在一个应用中，可以利用该方法和材料在制造半导体系统及其元件，组件和器件（例如导线，电触头）中蚀刻，形成或图案钌金属和/或二氧化钌的层或膜 ，字线，位线，互连，通孔，电极，电容器，晶体管，二极管和存储器件。
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47.发明申请公开(公告)号：US20010007317A1
公开(公告)日：2001-07-12
申请号：US09251644
申请日：1999-02-17
发明人： RAYMOND LETIZE , ROBERT HAMILTON
IPC分类号： C23F001/00 , H01B013/00 , C09K013/06
摘要： Tin or tin alloys, and any underlying copper-tin intermetallic, are stripped from copper surfaces utilizing an aqueous solution comprising nitric acid, sulfamic acid and a mono, di, or tri hydroxyl benzene.
摘要翻译： 使用包含硝酸，氨基磺酸和单，二或三羟基苯的水溶液，从铜表面剥离锡或锡合金和任何下面的铜 - 锡金属间化合物。
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公开(公告)号：US06258294B1
公开(公告)日：2001-07-10
申请号：US08940125
申请日：1997-10-01
申请人： Todd Johnson, II , John T. Fakler
发明人： Todd Johnson, II , John T. Fakler
IPC分类号： C09K1300
摘要： A composition and method for stripping tin and solder and the underlying tin-copper alloy from the copper substrate of a printed circuit board is presented. The liquid includes an aqueous solution of nitric acid in an amount sufficient to dissolve solder and tin, a source of ferric ions in an amount sufficient to dissolve the tin-copper alloy, and a source of halide ions in an amount sufficient to significantly improve the resistance between printed circuits.
摘要翻译： 提出了一种从印刷电路板的铜基板上剥离锡和焊料以及底层锡 - 铜合金的组合物和方法。 液体包括硝酸水溶液，其量足以溶解焊锡和锡，铁离子源的量足以溶解锡 - 铜合金，卤素源的量足以显着改善 印刷电路之间的电阻。
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公开(公告)号：US6143192A
公开(公告)日：2000-11-07
申请号：US146365
申请日：1998-09-03
IPC分类号： C09G1/02 , C23C16/44 , C23F1/00 , C23F1/30 , C23F1/44 , C23F4/00 , H01G4/00 , H01G4/008 , H01L21/3213 , H01L21/461
CPC分类号： C23C16/4407 , C22B11/046 , C23F1/30 , H01L21/32134 , Y02P10/214
摘要： A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.
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50.发明授权
公开(公告)号：US5989449A
公开(公告)日：1999-11-23
申请号：US134222
申请日：1998-08-14
申请人： Scott Campbell
发明人： Scott Campbell
摘要： A composition and method for stripping tin or tin-lead alloys, and any underlying copper-tin intermetallic, from a copper surface. The composition includes an aqueous solution of approximately 5-60% nitric acid by weight, approximately 0.5-30% ferric nitrate by weight, and a nitric acid stabilizer selected from the group consisting of an amino-triazole, an amino-isoxazole, and a linear amino sulfone in the form H.sub.2 N--SO.sub.2 --R, where R is any alkyl or benzene group, wherein the stabilizer is present at a concentration sufficient to inhibit exothermic conditions, emission of toxic NOx gas, and copper attack. A soluble source of halogen ion, such as hydrochloric acid, can be added to the composition to yield a uniform, reflective, bright pink copper appearance, and to further reduce sludge formation. In addition, sludge formation can be eliminated by adding a soluble source of sulfate ion (SO.sub.4.sup.-2) to the composition.
摘要翻译： 用于从铜表面剥离锡或锡铅合金以及任何下面的铜 - 锡金属间化合物的组合物和方法。 该组合物包含约5-60％硝酸重量的水溶液，约0.5-30％重量的硝酸铁，以及选自氨基 - 三唑，氨基异恶唑和 线性氨基砜，形式为H2N-SO2-R，其中R为任何烷基或苯基，其中稳定剂以足以抑制放热条件，排放有毒NOx气体和铜侵蚀的浓度存在。 可以向组合物中加入卤素离子的可溶性源，例如盐酸，以产生均匀的反射，明亮的粉红色铜外观，并进一步减少污泥的形成。 此外，通过向组合物中加入硫酸根离子（SO4-2）的可溶性源可以消除污泥形成。
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