Abstract:
A method for characterizing a CMOS logic cell of the partially depleted silicon-on-insulator type (PD-SOI) may include modeling the logic cell and determining internal potentials of transistors of the cell in a dynamic equilibrium state based upon a functional simulation of the modeled cell. This may be done using a binary stimulation signal having an initial logic value. The dynamic equilibrium state may be based upon a cancellation, to within a precision error, of the sum of the squares of variations in the quantities of charge in floating substrates of the transistors taken over a period of two successive transitions of the stimulation signal.
Abstract:
A controllable pulse generator generates the pulses of the signal which are respectively contained in successive time windows, and a control device formulates a control signal for the generator including, for each pulse, an indication of its position in the corresponding window. The control device includes a processor to deliver for each time window, at a delivery frequency Fe greater than the pulse repetition frequency, successive groups of N bits together defining a digital cue of position of a pulse inside the window. Also, a converter converts this digital position cue into the control signal temporally spread over the length (T) of the window and including the indication of position at an instant corresponding to the digital position cue. This makes it possible to position the pulse inside its window with a temporal precision equal to 1/N.Fe.
Abstract:
The present invention relates to a page-erasable FLASH memory including a memory array having a plurality of pages each with floating-gate transistors connected by their gates to word lines, a word line decoder connected to the word lines of the memory, and the application of a positive erase voltage to the source or drain electrodes of all the floating-gate transistors of a sector forming a page to be erased. According to the present invention, the word line decoder includes a unit for applying, when a page is being erased, a negative erase voltage to the gates of the transistors of the page to be erased, while applying a positive inhibit voltage to the gates of the transistors of at least one page that is not to be erased.
Abstract:
A circuit for splitting poles between a first stage and a second inverting voltage-amplifier stage of an electronic circuit, comprises, in series between the output of the first stage and the output of the second stage, and in that order, a first capacitor, a second capacitor and a resistor. The circuit further comprises a voltage-divider bridge which is connected between a terminal delivering a substantially constant voltage and the output of the first stage. The output of the voltage-divider bridge is linked to the common node between the first capacitor and the second capacitor, in such a way that a first resistor of the voltage-divider bridge is connected in parallel with the first capacitor.
Abstract:
A method is provided for secured transfer of data from a first memory containing the data element to a second memory through a data bus that is connected between the first memory and the second memory. According to the method, a secret N-byte data element is transferred byte-by-byte through the data bus, with each byte transiting at least once on the data bus. Before each transfer of a byte of the secret data element, a current index ranging from 0 to Nnull1 is randomly chosen, with the current index corresponding to a place value of the byte to be transferred. At each transfer of a byte of the secret data element with a place value equal to the current index, a corresponding bit of an N-byte loading indicator is modified as a function of a loading mode, with the loading mode being an integer ranging from 0 to a first constant. The transfer of the secret data element is ended when the loading indicator takes a predetermined value.
Abstract:
In one embodiment, a semiconductor device includes a carrier substrate, a buried dielectric region overlying the carrier substrate, and a semiconductor film separated from the carrier substrate by the buried dielectric region. NMOS transistors and PMOS transistors are disposed at a surface of the semiconductor film and coupled together to form a static random access memory (SRAM) cell. The NMOS transistors and the PMOS transistors each include a gate dielectric layer having a thickness greater than three nanometers and an active region in the semiconductor film. The active region of the PMOS transistors are formed from a silicon-germanium alloy.
Abstract:
An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal imposes the drain-source current of the first transistor.
Abstract:
An indirect time-of-flight measurement sensor includes a photosensitive pixel array configured to acquire a succession of images of a scene during a given exposure time. The sensor includes a control unit configured to control the acquisition of the succession of images by the pixel array and to define an exposure time for this acquisition based on a pixel saturation rate of the array, distances between the sensor and elements of the scene, and a standard deviation of the distances between the sensor and the elements of the scene.
Abstract:
A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.
Abstract:
A device is configured to receive a first carrier signal, and deliver a second carrier signal, and has a phase-locked loop including a first domain including an oscillator configured to generate a signal at a given frequency, and a circuit configured to generate information representative of the frequency of the signal generated by the oscillator, and to generate the second carrier signal and a clock signal, the first domain being clocked by the first carrier signal, a second domain, clocked by the clock signal, including a circuit configured to compare the frequency of the signal generated by the oscillator with the frequency of the first carrier signal and to control the oscillator, a matching circuit configured to transfer information representative of the frequency of the signal generated by the oscillator from the first domain to the second domain.