公开(公告)号：US11278127B2

公开(公告)日：2022-03-22

申请号：US16257806

申请日：2019-01-25

申请人： Sinomax USA Inc.

发明人： Josh Micklos

IPC分类号： A47C27/15 ,  A47C27/08 ,  A47C27/14

摘要： A mattress comprising a first layer comprising at least one channel extending laterally from a first side of the layer to an opposite side of the layer, and a plurality of foam spheres or hemispheres disposed in each channel. A mattress assembly comprising the mattress and a mattress foundation.

公开(公告)号：US11264463B2

公开(公告)日：2022-03-01

申请号：US16883492

申请日：2020-05-26

申请人： GLOBALFOUNDRIES INC.

发明人： Guillaume Bouche ,  Andy Chih-Hung Wei

IPC分类号： H01L29/161 ,  H01L29/16 ,  H01L23/482 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

摘要： Embodiments of the present invention provide a multiple fin field effect transistor (finFET) with low-resistance gate structure. A metallization line is formed in parallel with the gate, and multiple contacts are formed over the fins which connect the metallization line to the gate. The metallization line provides reduced gate resistance, which allows fewer transistors to be used for providing In-Out (IO) functionality, thereby providing space savings that enable an increase in circuit density.

公开(公告)号：US11228325B2

公开(公告)日：2022-01-18

申请号：US16833663

申请日：2020-03-30

申请人： GLOBALFOUNDRIES INC.

发明人： Abdellatif Bellaouar ,  Sher Jiun Fang ,  Frank Zhang

IPC分类号： H04B1/00 ,  H04B1/16 ,  H03L7/099 ,  H03F3/195 ,  H03G3/30 ,  H03F1/08

摘要： We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.

公开(公告)号：US11160390B2

公开(公告)日：2021-11-02

申请号：US16111989

申请日：2018-08-24

申请人： Sinomax USA Inc.

发明人： Josh Micklos ,  Michael Carter ,  Yee Mei Mok

IPC分类号： A47C31/10 ,  A47C27/14

摘要： A mattress cover, comprising a top layer; a first side layer comprising a first air-impermeable portion, a first air-permeable portion, a first air-impermeable flap, and first affixing apparatus, wherein the first affixing apparatus is configured to reversibly affix the first air-impermeable flap over the first air-permeable portion; a second side layer comprising a second air-impermeable portion, a second air-permeable portion, a second air-impermeable flap, and second affixing apparatus, wherein the second affixing apparatus is configured to reversibly affix the second air-impermeable flap over the second air-permeable portion; a head layer; and a foot layer.

公开(公告)号：US10944437B2

公开(公告)日：2021-03-09

申请号：US15967281

申请日：2018-04-30

申请人： GLOBALFOUNDRIES INC.

发明人： Abdellatif Bellaouar ,  Sher Jiun Fang ,  Frank Zhang

IPC分类号： H04B1/00 ,  H04B1/16 ,  H03L7/099 ,  H03F3/195 ,  H03G3/30 ,  H03F1/08

摘要： We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.

公开(公告)号：US10790276B2

公开(公告)日：2020-09-29

申请号：US16147303

申请日：2018-09-28

申请人： GLOBALFOUNDRIES INC.

发明人： Chien-Hsin Lee ,  Manjunatha Prabhu ,  Mahadeva Iyer Natarajan

IPC分类号： H01L27/02 ,  H01L29/417 ,  H01L23/535 ,  H01L21/768 ,  G05B19/4097

摘要： Methods, apparatus, and systems relating to a MOSFET with ESD resistance, specifically, to a semiconductor device comprising a field-effect transistor (FET) comprising a gate, a source, and a drain, all extending parallel to each other in a first direction; at least one source electrostatic discharge (ESD) protection circuit; a source terminal disposed above and in electrical contact with the at least one source ESD protection circuit, wherein the source terminal extends in the first direction; at least one drain ESD protection circuit; and a drain terminal disposed above and in electrical contact with the at least one drain ESD protection circuit, wherein the drain terminal extends in the first direction.

公开(公告)号：US10714068B2

公开(公告)日：2020-07-14

申请号：US15226764

申请日：2016-08-02

申请人： David Hopson

发明人： David Hopson

IPC分类号： A63H5/00 ,  G10K5/00 ,  A01M31/00

摘要： A whistle mouthpiece is provided that has a whistle mechanism that comprises one or more openings that may contain one or more reeds or other frequency producing mechanisms that produce the same or different resonant frequencies. The one or more openings may transversely cross the whistle mouthpiece in a parallel manner, or may alternatively exit the whistle mouthpiece at the front portion at a non-parallel location or at another location along the bottom or top of the mouthpiece.

公开(公告)号：US10438853B2

公开(公告)日：2019-10-08

申请号：US15821684

申请日：2017-11-22

申请人： GLOBALFOUNDRIES INC.

发明人： Shahab Siddiqui ,  Beth Baumert ,  Abu Naser M. Zainuddin ,  Luigi Pantisano

IPC分类号： H01L21/8234 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L27/088 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/311 ,  C23C16/50

摘要： At least one method, apparatus and system are provided for forming a hybrid oxide layer for providing for a first region of a finFET device to operate at a first voltage and a second region of the finFET to operate at a second voltage. A first set of fins are formed on an I/O device portion, and a second set of fins are formed on a core device portion of a substrate. A first and a second oxide layers are deposited on the first and second set of fins, wherein they merge to form a hybrid oxide layer. The thickness of the second oxide layer is based on a first operating voltage for the I/O device portion. The hybrid layer is removed from the core device portion such that the I/O device portion operates at the first voltage and the core device portion operates at a second voltage.

公开(公告)号：US10418455B2

公开(公告)日：2019-09-17

申请号：US15716287

申请日：2017-09-26

申请人： GLOBALFOUNDRIES INC.

发明人： Hui Zang ,  Daniel Jaeger ,  Haigou Huang ,  Veeraraghavan Basker ,  Christopher Nassar ,  Jinsheng Gao ,  Michael Aquilino

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L21/225 ,  H01L21/321 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/417 ,  H01L27/092

摘要： At least one method, apparatus and system disclosed herein involves forming trench in a gate region, wherein the trench having an oxide layer to a height to reduce or prevent process residue. A plurality of fins are formed on a semiconductor substrate. Over a first portion of the fins, an epitaxial (EPI) feature at a top portion of each fin of the first portion. Over a second portion of the fins, a gate region is formed. In a portion of the gate region, a trench is formed. A first oxide layer at a bottom region of the trench is formed. Prior to performing an amorphous-silicon (a-Si) deposition, a flowable oxide material is deposited into the trench for forming a second oxide layer. The second oxide layer comprises the flowable oxide and the first oxide layer. The second oxide layer has a first height.

公开(公告)号：US10411752B1

公开(公告)日：2019-09-10

申请号：US16174145

申请日：2018-10-29

申请人： GLOBALFOUNDRIES INC.

发明人： Saquib Bin Halim ,  MD Sayed Kaysar Bin Rahim ,  Marcel Wieland

IPC分类号： H04B1/38 ,  H04B1/40 ,  H01L23/31 ,  H01L23/48 ,  H01L23/552 ,  H01L21/56 ,  H01L21/768 ,  H01L23/66

摘要： A semiconductor device comprising an on-mold antenna for transmitting and/or receiving a millimeter-wave radio frequency signal is provided. The semiconductor device includes a semiconductor layer; a polymer layer proximal to the semiconductor layer; a mold proximal to the polymer layer; a plurality of nodes proximal to the semiconductor layer and distal to the polymer layer; an antenna disposed on the mold; and a conductive element providing electrical communication between the antenna and a first node. The mold may be from 500 μm to 1000 μm thick, such as from 750 μm to 800 μm thick, such as about 775 μm.