公开(公告)号：US20100120224A1

公开(公告)日：2010-05-13

申请号：US12615613

申请日：2009-11-10

申请人： Akihisa SHIMOMURA ,  Masaki KOYAMA ,  Yasuhiro JINBO ,  Naoki OKUNO

发明人： Akihisa SHIMOMURA ,  Masaki KOYAMA ,  Yasuhiro JINBO ,  Naoki OKUNO

IPC分类号： H01L21/46

CPC分类号： H01L21/84 ,  H01L21/76254

摘要： An object is to provide a method for manufacturing an SOI substrate including a single crystal silicon film whose plane orientation is (100) and a single crystal silicon film whose plane orientation is (110) with high yield. A first single crystal silicon substrate whose plane orientation is (100) is doped with first ions to form a first embrittlement layer. A second single crystal silicon substrate whose plane orientation is (110) is doped with second ions to selectively form a second embrittlement layer. Only part of the first single crystal silicon substrate is separated along the first embrittlement layer by first heat treatment, thereby forming a first single crystal silicon film. A region of the second single crystal silicon substrate, in which the second embrittlement layer is not formed, is removed. Part of the second single crystal silicon substrate is separated along the second embrittlement layer by second heat treatment, thereby forming a second single crystal silicon film.

摘要翻译： 本发明的目的是提供一种制造包括其平面取向为（100）的单晶硅膜和具有高产率的平面取向为（110）的单晶硅膜的SOI衬底的方法。 其平面取向为（100）的第一单晶硅衬底被掺杂有第一离子以形成第一脆化层。 其平面取向为（110）的第二单晶硅衬底被掺杂有第二离子以选择性地形成第二脆化层。 通过第一热处理，仅第一单晶硅衬底的一部分沿着第一脆化层分离，从而形成第一单晶硅膜。 除去未形成第二脆性层的第二单晶硅衬底的区域。 通过第二热处理沿第二脆化层分离第二单晶硅衬底的一部分，从而形成第二单晶硅膜。

公开(公告)号：US07700463B2

公开(公告)日：2010-04-20

申请号：US11506855

申请日：2006-08-21

申请人： Akihisa Shimomura

发明人： Akihisa Shimomura

IPC分类号： H01L21/20

CPC分类号： H01L21/02675 ,  B23K26/067 ,  B23K26/0738 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1266 ,  H01L27/1285

摘要： A semiconductor device having high electrical characteristics is manufactured at low cost and with high throughput. A semiconductor film is crystallized or activated by being irradiated with a laser beam emitted from one fiber laser. Alternatively, laser beams are emitted from a plurality of fiber lasers and coupled by a coupler to be one laser beam, and then a semiconductor film is irradiated with the coupled laser beam so as to be crystallized or activated.

摘要翻译： 以低成本和高产量制造具有高电特性的半导体器件。 通过用从一根光纤激光器发出的激光束照射半导体膜而结晶或活化。 或者，激光束从多个光纤激光器发射并通过耦合器耦合为一个激光束，然后用耦合的激光束照射半导体膜以使其结晶或激活。

公开(公告)号：US20100093153A1

公开(公告)日：2010-04-15

申请号：US12575555

申请日：2009-10-08

申请人： Masaki Koyama ,  Junpei Momo ,  Eiji Higa ,  Hiroaki Honda ,  Tamae Moriwaka ,  Akihisa Shimomura

发明人： Masaki Koyama ,  Junpei Momo ,  Eiji Higa ,  Hiroaki Honda ,  Tamae Moriwaka ,  Akihisa Shimomura

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66772

摘要： To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one.

摘要翻译： 为了防止在用激光束照射单晶半导体层的情况下，在激光照射时将杂质元素摄入单晶半导体层。 在SOI衬底的制造方法中，制备单晶半导体衬底和基底衬底; 通过用加速的离子照射单晶半导体衬底，在单晶半导体衬底的表面的预定深度的区域中形成脆化区域; 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合; 通过加热单晶半导体衬底以使脆化区域作为边界进行分离，在基底衬底上形成绝缘层，形成单晶半导体层; 去除形成在单晶半导体层上的氧化膜; 并且在除去氧化膜之后，通过用激光束照射单晶半导体层的表面，使单晶半导体层的至少一个表面熔融。 单晶半导体层通过激光束的照射而熔化的次数是1。

公开(公告)号：US20100087047A1

公开(公告)日：2010-04-08

申请号：US12568768

申请日：2009-09-29

申请人： Akihisa Shimomura ,  Masaki Koyama ,  Eiji Higa

发明人： Akihisa Shimomura ,  Masaki Koyama ,  Eiji Higa

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： To increase adhesion between a single crystal semiconductor layer and a base substrate and to reduce bonding defects therebetween. To perform radical treatment on a surface of a semiconductor substrate to form a first insulating film on the semiconductor substrate; irradiate the semiconductor substrate with accelerated ions through the first insulating film to form an embrittlement region in the semiconductor substrate; form a second insulating film on the first insulating film; perform heat treatment after bonding a surface of the second insulating film and a surface of the base substrate to perform separation along the embrittlement region so that a semiconductor layer is formed over the base substrate with the first and second insulating films interposed therebetween; etch the semiconductor layer; and irradiate the semiconductor layer on which the etching is performed with a laser beam.

摘要翻译： 为了增加单晶半导体层与基底基板之间的粘合力并减小它们之间的接合缺陷。 在半导体衬底的表面进行自由基处理，以在半导体衬底上形成第一绝缘膜; 通过第一绝缘膜照射具有加速离子的半导体衬底，以在半导体衬底中形成脆化区域; 在第一绝缘膜上形成第二绝缘膜; 在接合第二绝缘膜的表面和基底表面之后进行热处理，以沿着脆化区域进行分离，使得半导体层在第一和第二绝缘膜之间形成在基底基板上; 蚀刻半导体层; 并用激光束照射进行了蚀刻的半导体层。

公开(公告)号：US20100087045A1

公开(公告)日：2010-04-08

申请号：US12568772

申请日：2009-09-29

申请人： Akihisa SHIMOMURA ,  Hajime TOKUNAGA

发明人： Akihisa SHIMOMURA ,  Hajime TOKUNAGA

IPC分类号： H01L21/762 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L27/1218 ,  H01L29/66772

摘要： An SOI substrate is manufactured by forming an embrittled layer in a bond substrate by increasing the dose of hydrogen ions in the formation of the embrittled layer to a value more than the dose of hydrogen ions of the lower limit for separation of the bond substrate, separating the bond substrate attached to the base substrate, forming an SOI substrate in which a single crystal semiconductor film is formed over the base substrate, and irradiating a surface of the single crystal semiconductor film with laser light.

摘要翻译： 通过将脆化层的形成中的氢离子的剂量增加到比用于分离接合基板的下限的氢离子的剂量的值更高的值，通过在接合基板上形成脆化层来制造SOI衬底 所述键合衬底附接到所述基底衬底，形成在所述基底衬底上形成单晶半导体膜的SOI衬底，以及用所述激光照射所述单晶半导体膜的表面。

公开(公告)号：US20100084734A1

公开(公告)日：2010-04-08

申请号：US12568761

申请日：2009-09-29

申请人： Junpei Momo ,  Kosei Nei ,  Hiroaki Honda ,  Masaki Koyama ,  Akihisa Shimomura

发明人： Junpei Momo ,  Kosei Nei ,  Hiroaki Honda ,  Masaki Koyama ,  Akihisa Shimomura

IPC分类号： H01L27/12 ,  H01L21/762

CPC分类号： H01L29/78603 ,  H01L21/76254 ,  H01L21/84

摘要： To provide a semiconductor substrate in which a semiconductor element having favorable crystallinity and high performance can be formed. A single crystal semiconductor substrate having an embrittlement layer and a base substrate are bonded with an insulating layer interposed therebetween; the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment; a single crystal semiconductor layer is fixed to the base substrate; the single crystal semiconductor layer is irradiated with a laser beam; the single crystal semiconductor layer is in a partially melted state to be recrystallized; and crystal defects are repaired. In addition, the energy density of a laser beam with which the best crystallinity of the single crystal semiconductor layer is obtained is detected by a microwave photoconductivity decay method.

摘要翻译： 提供可以形成具有良好的结晶性和高性能的半导体元件的半导体衬底。 具有脆化层的单晶半导体衬底和基底衬底之间的绝缘层接合; 通过热处理沿着脆化层分离单晶半导体衬底; 单晶半导体层固定在基底基板上; 用激光束照射单晶半导体层; 单晶半导体层处于部分熔融状态以进行再结晶; 并修复晶体缺陷。 此外，通过微波光电导衰减法检测获得了单晶半导体层的最佳结晶度的激光束的能量密度。

公开(公告)号：US20100078071A1

公开(公告)日：2010-04-01

申请号：US12566015

申请日：2009-09-24

申请人： Hidekazu Miyairi ,  Takuya Hirohashi ,  Akihisa Shimomura

发明人： Hidekazu Miyairi ,  Takuya Hirohashi ,  Akihisa Shimomura

IPC分类号： H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device includes one or more unit cells between a first electrode and a second electrode, in which a semiconductor junction is formed by sequentially stacking: a first impurity semiconductor layer of one conductivity type; an intrinsic non-single-crystal semiconductor layer including an NH group or an NH2 group; and a second impurity semiconductor layer of opposite conductivity type to the first impurity semiconductor layer. In the non-single-crystal semiconductor layer of a unit cell on a light incident side, the nitrogen concentration measured by secondary ion mass spectrometry is 5×1018/cm3 or more and 5×1020/cm3 or less and oxygen and carbon concentrations measured by secondary ion mass spectrometry are less than 5×1018/cm3.

摘要翻译： 光电转换装置包括在第一电极和第二电极之间的一个或多个单位电池，其中通过依次层叠形成半导体结：一种导电类型的第一杂质半导体层; 包含NH基或NH 2基的本征非单晶半导体层; 以及与第一杂质半导体层相反的导电类型的第二杂质半导体层。 在光入射侧的单电池的非单晶半导体层中，通过二次离子质谱法测定的氮浓度为5×1018 / cm 3以上且5×10 20 / cm 3以下，并且测量了氧和碳浓度 通过二次离子质谱分析，小于5×1018 / cm3。

公开(公告)号：US07678668B2

公开(公告)日：2010-03-16

申请号：US12213271

申请日：2008-06-17

申请人： Akihisa Shimomura ,  Hideto Ohnuma ,  Tetsuya Kakehata ,  Kenichiro Makino

发明人： Akihisa Shimomura ,  Hideto Ohnuma ,  Tetsuya Kakehata ,  Kenichiro Makino

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： It is object to provide a manufacturing method of an SOI substrate provided with a single-crystal semiconductor layer, even in the case where a substrate having a low allowable temperature limit, such as a glass substrate, is used and to manufacture a high-performance semiconductor device using such an SOI substrate. Light irradiation is performed on a semiconductor layer which is separated from a semiconductor substrate and bonded to a support substrate having an insulating surface, using light having a wavelength of 365 nm or more and 700 nm or less, and a film thickness d (nm) of the semiconductor layer which is irradiated with the light is made to satisfy d=λ/2n×m±α (nm), when a light wavelength is λ (nm), a refractive index of the semiconductor layer is n, m is a natural number greater than or equal to 1 (m=1, 2, 3, 4, . . . ), and 0≦α≦10 is satisfied.

摘要翻译： 目的在于提供一种具有单晶半导体层的SOI衬底的制造方法，即使使用诸如玻璃衬底等具有低允许温度极限的衬底并制造高性能 使用这种SOI衬底的半导体器件。 使用波长365nm以上且700nm以下的光和膜厚d（nm）在与半导体基板分离并与具有绝缘面的支撑基板接合的半导体层上进行光照射， 被照射到半导体层的半导体层的折射率为n时，满足d =λ/ 2n×m±α（nm），当光波长为λ（nm）时，m为 大于或等于1（m = 1,2,3,4，...），0＆nlE;α＆nlE; 10的自然数。

公开(公告)号：US20100029068A1

公开(公告)日：2010-02-04

申请号：US12533401

申请日：2009-07-31

申请人： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

发明人： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC分类号： H01L21/311 ,  H01L21/20

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US20090230503A1

公开(公告)日：2009-09-17

申请号：US12402518

申请日：2009-03-12

申请人： Akihisa SHIMOMURA ,  Masaki KOYAMA ,  Motoki NAKASHIMA

发明人： Akihisa SHIMOMURA ,  Masaki KOYAMA ,  Motoki NAKASHIMA

IPC分类号： H01L27/12 ,  H01L21/762 ,  B32B13/04

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： Methods for manufacturing a semiconductor substrate and a semiconductor device by which a high-performance semiconductor element can be formed are provided. A single crystal semiconductor substrate including an embrittlement layer and a base substrate are bonded to each other with an insulating layer interposed therebetween, and the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment to fix a single crystal semiconductor layer over the base substrate. Next, a plurality of regions of a monitor substrate are irradiated with laser light under conditions of different energy densities, and carbon concentration distribution and hydrogen concentration distribution in a depth direction of each region of the single crystal semiconductor layer which has been irradiated with the laser light is measured. Optimal irradiation intensity of laser light is irradiation intensity with which a local maximum of the carbon concentration and a shoulder peak of the hydrogen concentration are observed. A single crystal semiconductor layer is irradiated with optimal laser light at energy density detected by using the monitor substrate, whereby a semiconductor substrate is manufactured.

摘要翻译： 提供了可以形成高性能半导体元件的半导体衬底和半导体器件的制造方法。 将包含脆化层和基底基板的单晶半导体基板通过绝缘层彼此接合，通过热处理将单晶半导体基板沿着脆化层分离，将单晶半导体层固定在基板上 基质。 接下来，在能量密度不同的条件下，用激光照射监视器基板的多个区域，并且已经照射了激光的单晶半导体层的各区域的深度方向上的碳浓度分布和氢浓度分布 测光。 激光的最佳照射强度是观察到碳浓度的局部最大值和氢浓度的肩峰值的照射强度。 通过使用监视器基板检测到的能量密度的最佳激光照射单晶半导体层，由此制造半导体衬底。