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    High-sensitivity z-axis vibration sensor and method of fabricating the same
    53.
    发明授权
    High-sensitivity z-axis vibration sensor and method of fabricating the same 失效
    高灵敏度z轴振动传感器及其制造方法

    公开(公告)号：US08263426B2

    公开(公告)日：2012-09-11

    申请号：US12509360

    申请日：2009-07-24

    申请人： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： H01L21/00

    CPC分类号： G01P15/0802 ,  G01H11/06 ,  G01P1/023 ,  G01P15/125 ,  H04R19/005

    摘要： Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.

    摘要翻译： 提供了一种高灵敏度的MEMS型z轴振动传感器，其可以通过将掺杂的上硅层和上电极之间的电容从正向或者反向偏移来感测z轴振动，当中心质量为 掺杂多晶硅层由于z轴振动而移动。 特别地，由于掺杂的上硅层的一部分另外连接到掺杂多晶硅层的中心质量块，因此由掺杂多晶硅层的中心质量造成的误差最小化，可以敏感地响应低的振动弱 频率如地震波。 因此，由于高灵敏度的MEMS型z轴振动传感器对低频带中的少量振动敏感地作出响应，因此可以应用于地震仪中，以便感测具有极小振动频率的低频地震波 和低振动速度。 此外，由于高灵敏度的MEMS型z轴振动传感器具有比相同尺寸的MEMS型z轴振动传感器更高的振动灵敏度，所以在逐渐减小的电子设备中是有用的。

    Apparatus and method for writing data to phase-change memory by using power calculation and data inversion
    54.
    发明授权
    Apparatus and method for writing data to phase-change memory by using power calculation and data inversion 有权
    通过使用功率计算和数据反演将数据写入相变存储器的装置和方法

    公开(公告)号：US07920413B2

    公开(公告)日：2011-04-05

    申请号：US12040137

    申请日：2008-02-29

    申请人： Byoung-Gon Yu ,  Byung-Do Yang ,  Seung-Yun Lee ,  Sung-Min Yoon ,  Young Sam Park ,  Nam Yeal Lee

    发明人： Byoung-Gon Yu ,  Byung-Do Yang ,  Seung-Yun Lee ,  Sung-Min Yoon ,  Young Sam Park ,  Nam Yeal Lee

    IPC分类号： G11C11/00

    CPC分类号： G11C7/1006 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2211/5647

    摘要： Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time. According to the present invention, since the PRAM consumes different amounts of power when writing data with a value of 0 and data with a value of 1, the power consumed when input original data is stored and the power consumed when the input original data is inverted and stored are compared to each other, the data with a smaller power consumption is stored when the data is written to the PRAM as a word unit, and thus the power consumption of the PRAM can be reduced.

    摘要翻译： 提供了一种通过使用写入功率计算和数据反转功能将数据写入相变随机存取存储器（PRAM）的装置和方法，更具体地，涉及一种用于写入数据的装置和方法，该装置和方法可通过计算功率来最小化功耗 在输入原始数据或反相数据被写入PRAM并存储消耗较少功率的数据时消耗。 由于需要大电流长时间流动，所以PRAM消耗大量的功率以便将数据存储在存储单元中。 根据本发明，由于在写入值为0的数据和值为1的数据时，PRAM消耗不同的功率量，所以当输入原始数据被存储时消耗的功率和当输入的原始数据被反相时消耗的功率 并将其进行存储，将数据作为字单元写入PRAM时，存储具有较小功耗的数据，从而能够降低PRAM的功耗。

    Programmable logic block of FPGA using phase-change memory device
    55.
    发明授权
    Programmable logic block of FPGA using phase-change memory device 有权
    使用相变存储器件的FPGA的可编程逻辑块

    公开(公告)号：US07911227B2

    公开(公告)日：2011-03-22

    申请号：US12633731

    申请日：2009-12-08

    申请人： Byoung Gon Yu ,  Yong-Joo Kim ,  Sung Min Yoon ,  Seung-Yun Lee ,  Young Sam Park ,  Soonwon Jung

    发明人： Byoung Gon Yu ,  Yong-Joo Kim ,  Sung Min Yoon ,  Seung-Yun Lee ,  Young Sam Park ,  Soonwon Jung

    IPC分类号： G06F7/38 ,  H03K19/173

    CPC分类号： H03K19/17784 ,  H03K19/17728 ,  H03K19/17792

    摘要： Provided is a programmable logic block of a field-programmable gate array (FPGA). The programmable logic block includes a pull-up access transistor connected to a power source, an up-phase-change memory device connected to the pull-up access transistor, a down-phase-change memory device connected to the up-phase-change memory device, an output terminal between the up-phase-change memory device and the down-phase-change memory device, and a pull-down access transistor connected to the down-phase-change memory device and a ground. The resistance values of the up-phase-change memory device and the down-phase-change memory device are individually programmed.

    摘要翻译： 提供了现场可编程门阵列（FPGA）的可编程逻辑块。 可编程逻辑块包括连接到电源的上拉访问晶体管，连接到上拉存取晶体管的上变相存储器件，连接到上变相存储晶体管的下变相存储器件 存储器件，上变相存储器件和下变相存储器件之间的输出端子以及连接到下变相存储器件和地的下拉存取晶体管。 上变相存储器件和下变相存储器件的电阻值被单独编程。

    Phase-change memory device and method of fabricating the same
    56.
    发明授权
    Phase-change memory device and method of fabricating the same 有权
    相变存储器件及其制造方法

    公开(公告)号：US07884347B2

    公开(公告)日：2011-02-08

    申请号：US12425152

    申请日：2009-04-16

    申请人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    发明人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    IPC分类号： H01L29/06

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

    摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.

    摘要翻译： 提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。 相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层， 形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。 作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。

    THIN COOLING DEVICE
    57.
    发明申请
    THIN COOLING DEVICE 审中-公开
    薄冷却装置

    公开(公告)号：US20100108296A1

    公开(公告)日：2010-05-06

    申请号：US12507676

    申请日：2009-07-22

    申请人： Seok Hwan MOON ,  In Kyu You ,  Kyoung Ik Cho ,  Byoung Gon Yu

    发明人： Seok Hwan MOON ,  In Kyu You ,  Kyoung Ik Cho ,  Byoung Gon Yu

    IPC分类号： F28D15/04

    CPC分类号： F28D15/04 ,  F28D15/0233

    摘要： Provided is a vapor-liquid phase change cooling device, which may be manufactured with no limitation of thickness.The cooling device includes a first thin plate including a groove-shaped capillary region, an evaporator section for evaporating a working fluid injected from outside, and a condenser section having a vapor condensation space for condensing the evaporated working fluid, a second thin plate having a vapor pathway for transporting the evaporated working fluid to the condenser section, and a third thin plate having a liquid pathway for transporting the working fluid condensed in the condenser section to the evaporator section.

    摘要翻译： 提供一种气液相变冷却装置，可以制造而不限制厚度。 冷却装置包括：第一薄板，其包括槽状毛细管区域，用于蒸发从外部喷射的工作流体的蒸发器部分和具有用于冷凝蒸发的工作流体的蒸气冷凝空间的冷凝器部分;第二薄板，具有 用于将蒸发的工作流体输送到冷凝器部分的蒸气通道，以及具有用于将在冷凝器部分中冷凝的工作流体输送到蒸发器部分的液体通路的第三薄板。

    Multilayer-structured bolometer and method of fabricating the same
    58.
    发明授权
    Multilayer-structured bolometer and method of fabricating the same 失效
    多层结构测辐射热计及其制造方法

    公开(公告)号：US07667202B2

    公开(公告)日：2010-02-23

    申请号：US12182456

    申请日：2008-07-30

    申请人： Sang Hoon Cheon ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Sang Hoon Cheon ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： G01J5/20

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023

    摘要： Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.

    摘要翻译： 提供一种多层结构的测辐射热计及其制造方法。 在多层结构的测辐射热计中，支撑传感器结构的主体的支撑臂的数量减少到一个，并且在一个支撑臂上形成两个电极。 因此，传感器结构通过仅一个支撑臂与基板电连接。 根据多层结构的测辐射热计和制造测辐射热计的方法，传感器结构的导热性显着降低，显着提高了对温度的敏感性，还减小了测辐射热计的像素尺寸以获得高分辨率的热图像。 此外，由于具有足够大的红外线吸收层，多层结构的测辐射热计可以具有高的填充因子，因此可以提高红外吸收。

    PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    59.
    发明申请
    PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    相变存储器件及其制造方法

    公开(公告)号：US20100012915A1

    公开(公告)日：2010-01-21

    申请号：US12425152

    申请日：2009-04-16

    申请人： Sung Min YOON ,  Byoung Gon YU ,  Soon Won JUNG ,  Seung Yun LEE ,  Young Sam PARK ,  Joon Suk LEE

    发明人： Sung Min YOON ,  Byoung Gon YU ,  Soon Won JUNG ,  Seung Yun LEE ,  Young Sam PARK ,  Joon Suk LEE

    IPC分类号： H01L47/00 ,  H01L21/06

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

    摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.

    摘要翻译： 提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。 相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层， 形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。 作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。