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    Programmable logic block of FPGA using phase-change memory device
    1.
    发明授权
    Programmable logic block of FPGA using phase-change memory device 有权
    使用相变存储器件的FPGA的可编程逻辑块

    公开(公告)号：US07911227B2

    公开(公告)日：2011-03-22

    申请号：US12633731

    申请日：2009-12-08

    申请人： Byoung Gon Yu ,  Yong-Joo Kim ,  Sung Min Yoon ,  Seung-Yun Lee ,  Young Sam Park ,  Soonwon Jung

    发明人： Byoung Gon Yu ,  Yong-Joo Kim ,  Sung Min Yoon ,  Seung-Yun Lee ,  Young Sam Park ,  Soonwon Jung

    IPC分类号： G06F7/38 ,  H03K19/173

    CPC分类号： H03K19/17784 ,  H03K19/17728 ,  H03K19/17792

    摘要： Provided is a programmable logic block of a field-programmable gate array (FPGA). The programmable logic block includes a pull-up access transistor connected to a power source, an up-phase-change memory device connected to the pull-up access transistor, a down-phase-change memory device connected to the up-phase-change memory device, an output terminal between the up-phase-change memory device and the down-phase-change memory device, and a pull-down access transistor connected to the down-phase-change memory device and a ground. The resistance values of the up-phase-change memory device and the down-phase-change memory device are individually programmed.

    摘要翻译： 提供了现场可编程门阵列（FPGA）的可编程逻辑块。 可编程逻辑块包括连接到电源的上拉访问晶体管，连接到上拉存取晶体管的上变相存储器件，连接到上变相存储晶体管的下变相存储器件 存储器件，上变相存储器件和下变相存储器件之间的输出端子以及连接到下变相存储器件和地的下拉存取晶体管。 上变相存储器件和下变相存储器件的电阻值被单独编程。

    NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME
    5.
    发明申请
    NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME 有权
    使用相变存储器件的非易失性可编程开关器件及其制造方法

    公开(公告)号：US20100108977A1

    公开(公告)日：2010-05-06

    申请号：US12428628

    申请日：2009-04-23

    申请人： Sung Min YOON ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    发明人： Sung Min YOON ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    IPC分类号： H01L45/00 ,  H01L21/768 ,  H01L21/31

    CPC分类号： H01L45/1226 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.

    摘要翻译： 提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。 开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有 与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属 电极层和设置成填充通孔的第二金属电极层。 开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

    PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    相变存储器件及其制造方法

    公开(公告)号：US20090184307A1

    公开(公告)日：2009-07-23

    申请号：US12240013

    申请日：2008-09-29

    申请人： Sung Min YOON ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    发明人： Sung Min YOON ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    IPC分类号： H01L21/06 ,  H01L45/00

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

    摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12 <= x <= 0.32）形成，从而确定晶体状态 作为稳定的单相，不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变随着温度的升高直接转变为单稳态 非晶态。 结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位 可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

    Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same
    8.
    发明授权
    Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same 有权
    使用相变存储器件的非易失性可编程开关器件及其制造方法

    公开(公告)号：US08445887B2

    公开(公告)日：2013-05-21

    申请号：US12428628

    申请日：2009-04-23

    申请人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    发明人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1226 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.

    摘要翻译： 提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。 开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有 与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属 电极层和设置成填充通孔的第二金属电极层。 开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

    Phase change memory device and method of fabricating the same
    9.
    发明授权
    Phase change memory device and method of fabricating the same 有权
    相变存储器件及其制造方法

    公开(公告)号：US07977674B2

    公开(公告)日：2011-07-12

    申请号：US12240013

    申请日：2008-09-29

    申请人： Sung Min Yoon ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    发明人： Sung Min Yoon ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    IPC分类号： H01L29/08 ,  H01L29/18 ,  H01L29/02 ,  H01L47/00 ,  H01L21/06

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

    摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12＆nlE; x＆lt; lE; 0.32）形成，结晶状态被确定为 稳定的单相，而不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变，从非晶形态到单稳态相转变 州。 结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位 可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。