公开(公告)号：US20110132002A1

公开(公告)日：2011-06-09

申请号：US12957075

申请日：2010-11-30

Applicant: Eun-kyung LEE ,  Byoung-lyong CHOI ,  Dongmok WHANG ,  Sang-jin LEE ,  Jong-woon LEE

Inventor： Eun-kyung LEE ,  Byoung-lyong CHOI ,  Dongmok WHANG ,  Sang-jin LEE ,  Jong-woon LEE

IPC: F25B21/02 ,  H01L35/32 ,  H01L35/34

CPC classification number: H01L35/32 ,  B82Y10/00 ,  H01L29/0665 ,  H01L35/26

Abstract: A core-shell nanowire with an uneven surface structure can be advantageously used in thermoelectric devices. The core-shell nanowire with the uneven surface structure includes a core region and a shell region, wherein the uneven surface structure is formed in the shell region.

Abstract translation: 具有不均匀表面结构的核 - 壳纳米线可有利地用于热电装置。 具有不均匀表面结构的核 - 壳纳米线包括芯区域和壳区域，其中不均匀表面结构形成在壳区域中。

公开(公告)号：US07800302B2

公开(公告)日：2010-09-21

申请号：US11442875

申请日：2006-05-30

Applicant: Byoung Lyong Choi ,  Kyung Sang Cho ,  Soon Jae Kwon ,  Eun Kyung Lee ,  Jae Ho Lee

Inventor： Byoung Lyong Choi ,  Kyung Sang Cho ,  Soon Jae Kwon ,  Eun Kyung Lee ,  Jae Ho Lee

IPC: H05B33/14

CPC classification number: H05B33/20 ,  Y10T428/2929

Abstract: An electroluminescent element and an electronic device including the electroluminescent element include a glass template having a silica layer as a matrix, electrodes and a luminescent material. Since the electroluminescent element according to the present invention includes silica as a matrix, the electroluminescent element has a stabilized structure even though a space between the luminescent layer and the electrode of the glass template is not filled. Further, such an electroluminescent element may be easily prepared, and thus may be effectively applied to various electronic devices, such as display devices, illumination devices and backlight units.

Abstract translation: 包括电致发光元件的电致发光元件和电子器件包括具有二氧化硅层作为基体的玻璃模板，电极和发光材料。 由于根据本发明的电致发光元件包括二氧化硅作为基质，所以即使未填充玻璃模板的发光层和电极之间的空间，电致发光元件也具有稳定的结构。 此外，这种电致发光元件可以容易地制备，并且因此可以有效地应用于诸如显示装置，照明装置和背光单元的各种电子装置。

公开(公告)号：US07754508B2

公开(公告)日：2010-07-13

申请号：US11335503

申请日：2006-01-20

Applicant: Eun-kyung Lee ,  Byoung-iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

Inventor： Eun-kyung Lee ,  Byoung-iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC: H01L21/00

CPC classification number: H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

Abstract translation: 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

公开(公告)号：US07737435B2

公开(公告)日：2010-06-15

申请号：US11706985

申请日：2007-02-16

Applicant: Jung Seok Hahn ,  Tae-Sang Kim ,  Bang-Lin Lee ,  Sang-Yoon Lee ,  Eun Kyung Lee

Inventor： Jung Seok Hahn ,  Tae-Sang Kim ,  Bang-Lin Lee ,  Sang-Yoon Lee ,  Eun Kyung Lee

IPC: H01L51/30

CPC classification number: C08L65/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

Abstract: Example embodiments pertain to an organic semiconductor composition, in which low-molecular-weight oligomer compounds are distributed in the spaces of a polymer compound so that the free spaces of the organic semiconductor polymer compound are filled with the low-molecular-weight oligomer compounds upon the formation of an organic semiconductor thin film, thereby increasing π-π stacking effects, and to an organic semiconductor thin film using the same and an organic electronic device employing the thin film. Using the organic semiconductor composition according to example embodiments, a semiconductor thin film and an organic electronic device having improved electrical properties may be manufactured.

Abstract translation: 示例性实施方案涉及有机半导体组合物，其中低分子量低聚物化合物分布在高分子化合物的空间中，使得有机半导体聚合物化合物的自由空间填充有低分子量低聚物化合物 有机半导体薄膜的形成，从而增加了＆pgr; 堆叠效应，以及使用该有机半导体薄膜的有机半导体薄膜和使用薄膜的有机电子器件。 使用根据示例性实施方案的有机半导体组合物，可以制造具有改善的电性能的半导体薄膜和有机电子器件。

公开(公告)号：US07714018B2

公开(公告)日：2010-05-11

申请号：US11637423

申请日：2006-12-11

Applicant: Eun Kyung Lee ,  Chris Richard Melville ,  David Mark Rotstein

Inventor： Eun Kyung Lee ,  Chris Richard Melville ,  David Mark Rotstein

IPC: A61K31/40 ,  C07D487/02 ,  C07D491/02 ,  C07D495/02 ,  C07D497/02 ,  C07D209/44 ,  C07D209/52

CPC classification number: C07D487/04

Abstract: Chemokine receptor antagonists, in particular, 3,7-diazabicyclo[3.3.0]octane compounds according to formula (I) are antagonists of chemokine CCR5 receptors which are useful for treating or preventing an human immunodeficiency virus (HIV) infection, or treating AIDS or ARC. The invention further provides methods for treating diseases that are alleviated with CCR5 antagonists. The invention includes pharmaceutical compositions and methods of using the compounds for the treatment of these diseases. The invention further includes processes for the preparation of compounds according to formula I.

Abstract translation: 趋化因子受体拮抗剂，特别是根据式（I）的3,7-二氮杂双环[3.3.0]辛烷化合物是可用于治疗或预防人类免疫缺陷病毒（HIV）感染或治疗AIDS的趋化因子CCR5受体的拮抗剂 或ARC。 本发明还提供了用于治疗被CCR5拮抗剂缓解的疾病的方法。 本发明包括药物组合物和使用该化合物治疗这些疾病的方法。 本发明还包括制备式I化合物的方法。

公开(公告)号：US07696105B2

公开(公告)日：2010-04-13

申请号：US12128362

申请日：2008-05-28

Applicant: Eun Kyung Lee ,  Dongmock Whang ,  Byoung Lyong Choi ,  Byung Sung Kim

Inventor： Eun Kyung Lee ,  Dongmock Whang ,  Byoung Lyong Choi ,  Byung Sung Kim

IPC: H01L21/461

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/0673 ,  H01L29/0676 ,  Y10S977/762 ,  Y10S977/89 ,  Y10S977/891 ,  Y10S977/892 ,  Y10S977/893

Abstract: Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires.

Abstract translation: 本文公开了一种生产无催化剂的单晶硅纳米线的方法。 根据该方法，可以简单且经济地制造纳米线，而不使用任何金属催化剂。 此外，可以防止包含在金属催化剂中的杂质被引入纳米线中，有助于纳米线的电学和光学性质的改善。 本文还公开了通过包括纳米线的方法和纳米器件制备的纳米线。

公开(公告)号：US20100065809A1

公开(公告)日：2010-03-18

申请号：US12350709

申请日：2009-01-08

Applicant: Eun Kyung LEE ,  Byoung Lyong CHOI ,  Gyeong Su PARK ,  Jai Yong HAN

Inventor： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Gyeong Su PARK ,  Jai Yong HAN

IPC: H01L29/66 ,  H01L21/20

CPC classification number: B82Y20/00 ,  B82Y40/00 ,  C01B33/113 ,  H01L29/0669 ,  H01L29/068 ,  H01L29/66 ,  H01L33/18

Abstract: Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like.

Abstract translation: 本文公开了包含富硅氧化物的纳米线及其制造方法。 纳米线表现出优异的导电性能和光学特性，因此有效地用于各种应用中，包括例如太阳能电池，传感器，光电探测器，发光二极管，激光二极管，EL器件，PL器件，CL器件，FET ，CTF，表面等离子体波导，MOS电容器等。

公开(公告)号：US20100016312A1

公开(公告)日：2010-01-21

申请号：US12460199

申请日：2009-07-15

Applicant: Eun Kyung Lee ,  Ryan Craig Schoenfeld ,  Robert James Weikert

Inventor： Eun Kyung Lee ,  Ryan Craig Schoenfeld ,  Robert James Weikert

IPC: A61K31/5377 ,  C07D209/18 ,  C07D209/14 ,  C07D401/10 ,  C07D403/10 ,  C07D413/10 ,  A61K31/404 ,  A61K31/4725 ,  A61K31/496 ,  A61P25/22

CPC classification number: C07D401/10 ,  C07D209/08 ,  C07D209/30 ,  C07D209/42 ,  C07D231/56 ,  C07D403/10 ,  C07D413/10 ,  C07D417/10 ,  C07D471/04

Abstract: This application discloses compounds of generic Formula I: or pharmaceutically acceptable salts thereof, wherein A, R1, R2, R3, R4, Q, X, Y, m, p, and q are defined as described herein, useful for treatment of diseases associated with monoamine reuptake inhibitors. Also provided are pharmaceutical compositions, methods of using, and methods of preparing the compounds.

Abstract translation: 本申请公开了通式I的化合物或其药学上可接受的盐，其中A，R1，R2，R3，R4，Q，X，Y，m，p和q如本文所述定义，可用于治疗相关疾病 与单胺再摄取抑制剂。 还提供药物组合物，使用方法和制备化合物的方法。

公开(公告)号：US07646014B2

公开(公告)日：2010-01-12

申请号：US11606287

申请日：2006-11-30

Applicant: Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

Inventor： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

IPC: H01L35/24

CPC classification number: H01L51/105 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0545

Abstract: Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

Abstract translation: 公开了一种有机薄膜晶体管，其包括基板，栅极电极，栅极绝缘层，有机半导体层和源极/漏极，其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例，由于源/漏电极和有机半导体层之间的接触电阻降低，有机薄膜晶体管可能具有增加的电荷迁移率和Ion / Ioff比。 此外，在形成有机半导体层和绝缘膜时，可以更容易地应用湿法，从而简化制造工艺并降低制造成本。

公开(公告)号：US07608902B2

公开(公告)日：2009-10-27

申请号：US11441989

申请日：2006-05-26

Applicant: Soon Jae Kwon ,  Byoung Lyong Choi ,  Eun Kyung Lee ,  Kyung Sang Cho ,  In Taek Han ,  Jae Ho Lee ,  Seong Jae Choi

Inventor： Soon Jae Kwon ,  Byoung Lyong Choi ,  Eun Kyung Lee ,  Kyung Sang Cho ,  In Taek Han ,  Jae Ho Lee ,  Seong Jae Choi

IPC: H01L27/12

CPC classification number: C30B29/62 ,  C23C16/045 ,  C30B25/005 ,  Y10S977/764 ,  Y10S977/784 ,  Y10S977/785 ,  Y10S977/953 ,  Y10S977/957

Abstract: A nanowire composite and a method of preparing the nanowire composite comprise a template having a plurality of hollow channels, nanowires formed within the respective channels of the template, and a functional element formed by removing a portion of the template so that one or more of the nanowires formed within the portion of the template are exposed. Since the nanowire composite can be prepared in a simple manner at low costs and can be miniaturized, the nanowire composite finds application in resonators and a variety of sensors.

Abstract translation: 纳米线复合材料和制备纳米线复合材料的方法包括具有多个中空通道的模板，形成在模板的相应通道内的纳米线，以及通过去除模板的一部分而形成的功能元件，使得一个或多个 形成在模板部分内的纳米线被暴露。 由于纳米线复合材料可以以简单的方式以低成本制备并且可以小型化，纳米线复合材料可应用于谐振器和各种传感器。