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公开(公告)号：US20250069854A1
公开(公告)日：2025-02-27
申请号：US18947903
申请日：2024-11-14
Applicant: Tokyo Electron Limited
Inventor： Takafumi NOGAMI , Kenichi KOTE
IPC: H01J37/32
Abstract: A method of modifying a film formed on a substrate, includes: generating plasma by a microwave in an interior of a processing container in which a stage on which a substrate is placed is provided; and periodically applying a DC voltage to the stage in the interior of the processing container in which the plasma is generated by the generating the plasma, and irradiating the substrate with electrons in the plasma.
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公开(公告)号：US20250068059A1
公开(公告)日：2025-02-27
申请号：US18813332
申请日：2024-08-23
Applicant: Tokyo Electron Limited
Inventor： Hiroyuki Ide
Abstract: A substrate processing method of patterning a resist film formed on a substrate by exposing and developing the resist film is provided. The substrate processing method includes performing, before forming the resist film containing a metal on the substrate, an auxiliary process of adjusting moisture adhesion to a formation surface of the substrate on which the resist film is to be formed.
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公开(公告)号：US12237166B2
公开(公告)日：2025-02-25
申请号：US17838440
申请日：2022-06-13
Applicant: Tokyo Electron Limited
Inventor： Omid Zandi , Paul Abel , Mengistie Debasu
Abstract: The present disclosure provides new processes and methods to pre-treat metal surfaces in the back end of line (BEOL) fabrication of integrated circuits (ICs). More specifically, the present disclosure provides selective, self-limiting processes and methods for stripping native oxide surface layers that may form on exposed metal surfaces during processing of ICs. The processes and methods disclosed herein utilize the fundamental concepts of metal complexation to provide a novel solution, which enables native oxide surface layers to be selectively removed from exposed metal films in a self-limiting manner. In particular, the disclosed processes and methods use complexing agents (e.g., ligands) to selectively dissolve native oxide surface layers, without significantly etching or removing the underlying metal film.
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公开(公告)号：US20250059640A1
公开(公告)日：2025-02-20
申请号：US18938913
申请日：2024-11-06
Applicant: TOKYO ELECTRON LIMITED
Inventor： Koji MAEDA , Atsushi SHIMADA , Katsushi OIKAWA , Tetsuya MIYASHITA
Abstract: A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.
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公开(公告)号：US12230523B2
公开(公告)日：2025-02-18
申请号：US17889624
申请日：2022-08-17
Applicant: Tokyo Electron Limited
Inventor： Tadashi Enomoto , Nao Akashi , Yutai Matsuhashi , Masakazu Yamamoto
IPC: H01L21/67 , H01L21/673 , H01L21/68
Abstract: A substrate processing apparatus includes: a chamber that accommodates a boat; a transfer mechanism that is provided inside the chamber, and transfers a substrate; a first camera that captures an image of a support column of the boat and the substrate; a support member that is inserted through an opening formed in a wall surface of the chamber, and supports the first camera; and a driver that drives the support member in order to move the first camera between a standby position and a measurement position.
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Patent Agency Ranking
56.发明授权公开(公告)号：US12228390B2
公开(公告)日：2025-02-18
申请号：US17177289
申请日：2021-02-17
Applicant: Tokyo Electron Limited
Inventor： Masahide Tadokoro , Masashi Enomoto , Toyohisa Tsuruda , Hiroshi Nakamura , Kazuhiro Shiba
Abstract: An information processing apparatus includes a prediction unit configured to calculate, based on a film thickness model representing a relationship between a state of a substrate processing apparatus and a film thickness of a coating film formed on a front surface of a substrate by the substrate processing apparatus and pre-data representing the state of the substrate processing apparatus before the substrate is processed by the substrate processing apparatus, a predicted film thickness when the substrate is processed by the substrate processing apparatus; and an output unit configured to output, based on the predicted film thickness, instruction information on a processing of the substrate before the substrate is processed by the substrate processing apparatus.
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公开(公告)号：US12226796B2
公开(公告)日：2025-02-18
申请号：US18351245
申请日：2023-07-12
Applicant: Tokyo Electron Limited
Inventor： Michael Carcasi , Ihsan Simms , Joel Estrella , Antonio Luis Pacheco Rotondaro , Joshua Hooge , Hiroshi Marumoto
Abstract: A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.
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公开(公告)号：US20250054782A1
公开(公告)日：2025-02-13
申请号：US18722860
申请日：2022-12-26
Applicant: Tokyo Electron Limited
Inventor： Takumi HONDA
IPC: H01L21/67 , C23F1/26 , H01L21/3213
Abstract: A substrate processing apparatus etches a molybdenum film of a substrate having a device structure that includes, in a multistage manner, multilayer films including the molybdenum film. A processing tank retains therein etchant including acetic acid, phosphoric acid, nitric acid, and water as components. A controller is configured to: based on concentrations of the components, an amount of the etchant, a preliminarily-set target amount of the etchant, and preliminarily-set target concentrations of the respective components; decide a discharging amount of the etchant from the processing tank, and replenishing amounts of acetic acid, phosphoric acid, and nitric acid to the processing tank; control an open/close valve to discharge the decided discharging amount of the etchant from the processing tank; and control a supply unit to replenish the processing tank with the decided replenishing amounts of acetic acid, phosphoric acid, and nitric acid.
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公开(公告)号：US12224193B2
公开(公告)日：2025-02-11
申请号：US17474644
申请日：2021-09-14
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takehiro Shindo
IPC: H01L21/677 , B25J9/16 , H01L21/67 , H01L21/68
Abstract: An control method of a transfer mechanism is provided. The transfer mechanism transfers a substrate and has a holder for holding the substrate. In the control method, an outer edge of the substrate transferred by the transfer mechanism is detected and a center position of the substrate using a preset adjustment value corresponding to a path for transferring the substrate is measured. Further, in the control method, a target position is corrected based on the amount of displacement between the center position of the substrate and a preset reference position of the holder, and the transfer mechanism is controlled such that the reference position of the holder becomes the corrected target position.
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公开(公告)号：US12221693B2
公开(公告)日：2025-02-11
申请号：US18096217
申请日：2023-01-12
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takuya Kawaguchi , Takanobu Hotta , Hideaki Yamasaki
Abstract: There is provided a stress reducing method comprising: preparing a film forming apparatus configured to form a tungsten film on a substrate in a chamber by supplying a tungsten raw material gas and a reducing gas into the chamber; and making at least a part of a tungsten film deposited on an in-chamber component into a chlorine-containing tungsten film whose film stress is reduced by adjusting a chlorine concentration, when performing pre-coating in the chamber and/or when forming the tungsten film on the substrate, using the tungsten raw material gas and the reducing gas.
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