公开(公告)号：US09178135B2

公开(公告)日：2015-11-03

申请号：US14254858

申请日：2014-04-16

Applicant: Young-hyun Kim ,  Hee-ju Shin ,  Woo-jin Kim ,  Sang-hwan Park

Inventor： Young-hyun Kim ,  Hee-ju Shin ,  Woo-jin Kim ,  Sang-hwan Park

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni.

Abstract translation: 磁性装置可以包括隧道沐浴器和邻近隧道屏障设置的混合磁化层。 混合磁化层可以包括第一垂直磁各向异性（PMA）层，第二PMA层和设置在第一和第二PMA层之间的非晶形阻挡层。 第一PMA层可以包括多层膜，其中由Co形成的第一层和由Pt或Pd形成的第二层交替堆叠。 由与第一层和第二层不同的元素形成的第一掺杂剂也可以包括在第一PMA层中。 第二PMA层可以设置在第一PMA层和隧道势垒之间，并且可以包括选自由Co，Fe和Ni组成的组中的至少一种元素。

公开(公告)号：US09087977B2

公开(公告)日：2015-07-21

申请号：US14254871

申请日：2014-04-16

Applicant: Jeong-Heon Park ,  Ki-Woong Kim ,  Hee-Ju Shin ,  Joon-Myoung Lee ,  Woo-Jin Kim ,  Jae-Hoon Kim ,  Se-Chung Oh ,  Yun-Jae Lee

Inventor： Jeong-Heon Park ,  Ki-Woong Kim ,  Hee-Ju Shin ,  Joon-Myoung Lee ,  Woo-Jin Kim ,  Jae-Hoon Kim ,  Se-Chung Oh ,  Yun-Jae Lee

IPC: H01L43/02 ,  H01L43/08 ,  H01F10/32 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/30 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3272 ,  H01L23/528 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device is provided having a free layer and a pinned layer spaced apart from each other. A tunnel barrier layer is formed between the free layer and the pinned layer. The pinned layer may include a lower pinned layer, and an upper pinned layer spaced apart from the lower pinned layer. A spacer may be formed between the lower pinned layer and the upper pinned layer. A non-magnetic junction layer may be disposed adjacent to the spacer or between layers in the upper or lower pinned layer.

Abstract translation: 提供了具有彼此间隔开的自由层和钉扎层的半导体器件。 在自由层和钉扎层之间形成隧道势垒层。 被钉扎层可以包括下钉扎层和与下钉扎层隔开的上钉扎层。 可以在下钉扎层和上钉扎层之间形成间隔件。 非磁性接合层可以邻近间隔物设置在上或下钉扎层中的层之间。

公开(公告)号：US08041408B2

公开(公告)日：2011-10-18

申请号：US11453044

申请日：2006-06-15

Applicant: Woo Jin Kim

Inventor： Woo Jin Kim

IPC: H04M1/00

CPC classification number: H04M1/0262 ,  H01M2/0207 ,  H01M2/1066

Abstract: A battery fastening apparatus and a portable terminal using the same includes a case an exterior and having a battery seating portion formed on a side so as to be exposed to a surface of the case. A battery is seated on the battery seating portion. A locking knob has a latching protrusion protruding into the battery seating portion so that the battery remains fastened to the battery seating portion. The locking knob is partially exposed to an outside of the case and supported by an elastic member so that the latching protrusion engages with the battery. A stopping lever limits movement of the locking knob when the latching protrusion engages the battery. The battery fastening apparatus prevents the battery from unintentionally detaching from the body of the terminal during operation.

Abstract translation: 电池紧固装置和使用该电池固定装置的便携式终端包括外壳，并且具有形成在侧面上以便暴露于外壳表面的电池座部分的外壳。 电池座位在电池座上。 锁定旋钮具有突出到电池座部分中的闩锁突起，使得电池保持固定到电池座部分。 锁定旋钮部分地暴露于壳体的外部并由弹性构件支撑，使得闩锁突起与电池接合。 当闩锁突起接合电池时，止动杆限制锁定旋钮的移动。 电池固定装置防止电池在操作期间被无意地从终端的主体上分离。

公开(公告)号：US20110149647A1

公开(公告)日：2011-06-23

申请号：US12926442

申请日：2010-11-18

Applicant: Kwang-seok Kim ,  Taek-dong Lee ,  Woo-jin Kim ,  Sun-ae Seo ,  Kee-won Kim ,  Sun-ok Kim

Inventor： Kwang-seok Kim ,  Taek-dong Lee ,  Woo-jin Kim ,  Sun-ae Seo ,  Kee-won Kim ,  Sun-ok Kim

IPC: G11C11/14 ,  H01L29/82 ,  H01L21/02

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: Provided are a perpendicular magnetic tunnel junction (MTJ), a magnetic device including the same, and a method of manufacturing the MTJ, the perpendicular MTJ includes a lower magnetic layer; a tunnelling layer on the lower magnetic layer; and an upper magnetic layer on the tunnelling layer. One of the upper and lower magnetic layers includes a free magnetic layer that exhibits perpendicular magnetic anisotropy, wherein the magnetizing direction of the free magnetic layer is changed by a spin polarization current. A polarization enhancing layer (PEL) and an exchange blocking layer (EBL) are stacked between the tunnelling layer and the free magnetic layer.

Abstract translation: 提供垂直磁性隧道结（MTJ），包括该垂直磁性隧道结（MTJ）的磁性装置以及制造MTJ的方法，垂直MTJ包括下部磁性层; 下层磁性层上的隧道层; 和隧道层上的上层磁性层。 上下磁性层中的一个包括具有垂直磁各向异性的自由磁性层，其中自由磁性层的磁化方向由自旋极化电流改变。 极化增强层（PEL）和交换阻挡层（EBL）堆叠在隧穿层和自由磁性层之间。

公开(公告)号：US07588996B2

公开(公告)日：2009-09-15

申请号：US11770983

申请日：2007-06-29

Applicant: Hyo Geun Yoon ,  Woo Jin Kim ,  Dong Joo Kim ,  Ji Yong Park ,  Yong Soo Jung ,  Geun Min Choi ,  Young Wok Song ,  Sang Hyun Lee

Inventor： Hyo Geun Yoon ,  Woo Jin Kim ,  Dong Joo Kim ,  Ji Yong Park ,  Yong Soo Jung ,  Geun Min Choi ,  Young Wok Song ,  Sang Hyun Lee

IPC: H01L21/76

CPC classification number: H01L21/3086 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31155

Abstract: An oxide pattern forming method comprises forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0×1016 atoms/cm2 onto the oxide layer in a given region, and wet-etching the oxide layer in the remaining region where the boron ions are not implanted.

Abstract translation: 氧化物图案形成方法包括在半导体衬底上形成氧化物层，在给定区域中的氧化物层上注入不少于1.0×10 16原子/ cm 2的硼离子，并在剩余的区域中湿法蚀刻氧化物层，其中硼 离子不被植入。

公开(公告)号：US20090206427A1

公开(公告)日：2009-08-20

申请号：US12372083

申请日：2009-02-17

Applicant: Se-Chung Oh ,  Jang-Eun Lee ,  Kyung-Tae Nam ,  Woo-Jin Kim ,  Dae-Kyom Kim ,  Jun-ho Jeong ,  Seung-Yool Lee

Inventor： Se-Chung Oh ,  Jang-Eun Lee ,  Kyung-Tae Nam ,  Woo-Jin Kim ,  Dae-Kyom Kim ,  Jun-ho Jeong ,  Seung-Yool Lee

IPC: H01L29/82

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/10

Abstract: A magnetic memory device and a method of fabricating the same. The magnetic memory device includes a free layer, a write element, and a read element. The write element changes the magnetization direction of the free layer, and the read element senses the magnetization direction of the free layer. Herein, the write element includes a current confinement layer having a width smaller than the minimum width of the free layer to locally increase the density of a current flowing through the write element.

Abstract translation: 一种磁存储器件及其制造方法。 磁存储器件包括自由层，写入元件和读取元件。 写入元件改变自由层的磁化方向，并且读取元件感测自由层的磁化方向。 这里，写元件包括具有小于自由层的最小宽度的宽度的电流限制层，以局部地增加流过写入元件的电流的密度。

公开(公告)号：US20090122461A1

公开(公告)日：2009-05-14

申请号：US12358175

申请日：2009-01-22

Applicant: Pyeong Won OH ,  Woo Jin Kim ,  Hoon Jung Oh ,  Hyo Gun Yoon ,  Hyo Seob Yoon ,  Baik II Choi

Inventor： Pyeong Won OH ,  Woo Jin Kim ,  Hoon Jung Oh ,  Hyo Gun Yoon ,  Hyo Seob Yoon ,  Baik II Choi

IPC: H01G4/06

CPC classification number: H01L28/56 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/31616 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

Abstract: Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.

Abstract translation: 公开了一种用于半导体器件的电容器，包括：在半导体衬底上形成在预定下部结构上的下电极; 形成在下电极上并具有低漏电流特性的氧氮化铝膜; 形成在氮氧化铝膜上并具有比氮氧化铝膜更高的介电常数的氧化钇膜; 和形成在氧氮化钇膜上的上电极及其制造方法。

公开(公告)号：US20090051635A1

公开(公告)日：2009-02-26

申请号：US12195506

申请日：2008-08-21

Applicant: Jung-Hong Park ,  Woo-Jin Kim

Inventor： Jung-Hong Park ,  Woo-Jin Kim

IPC: G09G3/36

CPC classification number: G02F1/133604 ,  G02F1/133608 ,  G02F2001/133628

Abstract: A liquid crystal display includes: a liquid crystal panel; a plurality of lamps supplying light to the liquid crystal panel; external electrodes provided at both ends of the lamps; common electrodes including a plurality of electrode holders for fixing the external electrodes of the lamps in a surrounding manner and supplying power to the lamps; a first support side disposed on the external electrodes provided at the plurality of lamps and the common electrodes; and a common electrode support extending from the first support side to support the common electrodes and having a heat circulation passage.

Abstract translation: 液晶显示器包括：液晶面板; 向所述液晶面板供给光的多个灯; 设置在灯的两端的外部电极; 公共电极包括多个电极保持器，用于以周围的方式固定灯的外部电极并向灯供电; 设置在设置在所述多个灯和所述公共电极的外部电极上的第一支撑侧; 以及从第一支撑侧延伸以支撑公共电极并具有热循环通道的公共电极支撑件。

公开(公告)号：US07410909B2

公开(公告)日：2008-08-12

申请号：US11646700

申请日：2006-12-28

Applicant: Ji Hye Han ,  Ok Min Moon ,  Woo Jin Kim ,  Hyo Seob Yoon ,  Ji Yong Park ,  Kee Joon Oh

Inventor： Ji Hye Han ,  Ok Min Moon ,  Woo Jin Kim ,  Hyo Seob Yoon ,  Ji Yong Park ,  Kee Joon Oh

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/31133 ,  G03F7/423 ,  G03F7/428

Abstract: A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using cold deionized water, drying the semiconductor substrate, removing the ion implanted photoresist, and second cleaning the semiconductor wafer using an SPM solution.

Abstract translation: 去除离子注入光致抗蚀剂的方法包括使用施加了兆声波处理的热去离子水对第一次清洗具有离子注入光致抗蚀剂的半导体衬底，首先使用冷去离子水冲洗半导体衬底，干燥半导体衬底，去除离子 并且使用SPM解决方案来第二次清洁半导体晶片。

公开(公告)号：US20080003769A1

公开(公告)日：2008-01-03

申请号：US11647929

申请日：2006-12-29

Applicant: Hyo Seob Yoon ,  Woo Jin Kim ,  Ok Min Moon ,  Ji Yong Park

Inventor： Hyo Seob Yoon ,  Woo Jin Kim ,  Ok Min Moon ,  Ji Yong Park

IPC: H01L21/76

CPC classification number: H01L21/76224 ,  H01L27/105 ,  H01L27/1052

Abstract: A method for fabricating a device isolation structure of a semiconductor device includes the steps of forming a pad oxide layer and a pad nitride layer over a semiconductor substrate including a cell region and a dummy region, etching a portion of the pad nitride layer, the pad oxide layer and the semiconductor substrate to form a trench, forming a sidewall oxide layer over the sidewalls of the trench; removing the sidewall oxide layer in the dummy region, forming a silicon nitride layer over the sidewalls of the sidewall oxide layer both in the cell region and in the dummy region, filling the trench with an insulating layer, polishing the insulating layer to expose the pad nitride layer, and removing the pad nitride layer.

Abstract translation: 一种制造半导体器件的器件隔离结构的方法包括以下步骤：在包括单元区域和虚拟区域的半导体衬底上形成衬垫氧化物层和衬垫氮化物层，蚀刻衬垫氮化物层的一部分，衬垫 氧化物层和半导体衬底以形成沟槽，在沟槽的侧壁上形成侧壁氧化物层; 去除虚设区域中的侧壁氧化物层，在单元区域和虚拟区域中的侧壁氧化物层的侧壁上形成氮化硅层，用绝缘层填充沟槽，抛光绝缘层以露出衬垫 氮化物层，以及去除衬垫氮化物层。