Electron beam monitoring sensor and electron beam monitoring method
    51.
    发明授权
    Electron beam monitoring sensor and electron beam monitoring method 有权
    电子束监测传感器和电子束监测方法

    公开(公告)号:US06768118B2

    公开(公告)日:2004-07-27

    申请号:US10350188

    申请日:2003-01-24

    IPC分类号: H01J326

    摘要: The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.

    摘要翻译: 本发明提供了一种能够在多电子束书写系统中提供远光监测精度和高速监测的光束监测传感器以及使用其的监测方法。在用于电子束监测的法拉第杯中,钽或重金属 使用原子序数大于钽的材料来提供具有高纵横比的法拉第杯结构。 微法拉第杯允许电子束监测具有较少的光束泄漏到高加速度电子束。

    Electron beam lithography apparatus and pattern forming method
    52.
    发明授权
    Electron beam lithography apparatus and pattern forming method 失效
    电子束光刻设备和图案形成方法

    公开(公告)号:US06511048B1

    公开(公告)日:2003-01-28

    申请号:US09191383

    申请日:1998-11-13

    IPC分类号: H01J3730

    摘要: An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.

    摘要翻译: 一种电子束光刻设备和用于在单元掩模的周围精确地写入图案的半导体器件图案形成方法,从而以高产率制造大规模集成电路和精细结构器件。 具有较低孔径率的单元图形位于外围,并且具有较高孔径率的单元图形位于更接近于采用单元投影的本发明设备的第二掩模上提供的每个孔组内的中心部分。 示例性地,在用于半导体器件制造的掩模上,用于形成线图案和栅极图案的单元图形位于中央,并且用于形成孔图案的单元图形周边地定位在每个孔组中。 这允许在每个孔径组中精确地写入外围定位的图形。

    Charged particle beam lithography apparatus for forming pattern on semi-conductor
    54.
    发明授权
    Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
    用于在半导体上形成图案的带电粒子束光刻设备

    公开(公告)号:US06441383B1

    公开(公告)日:2002-08-27

    申请号:US09814062

    申请日:2001-03-22

    IPC分类号: H01J37304

    摘要: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil masks with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

    摘要翻译: 为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置,提供了安装传送孔和传输孔的多个模板掩模,并且通过驱动级定位,电子束通过 通过其他模板掩模的透射孔,同时用光束偏转装置在模板掩模上选择光圈,传送孔径被连续地用于掩模传送方向,模板掩模在与光束一起传播的同时被移动,而其它模版 当指定的模板掩模孔组被曝光时,执行掩模转印。 重复这些操作,以便执行所有曝光处理。

    Charged particle beam lithography method and apparatus thereof
    56.
    发明授权
    Charged particle beam lithography method and apparatus thereof 失效
    带电粒子束光刻方法及其装置

    公开(公告)号:US5831273A

    公开(公告)日:1998-11-03

    申请号:US811927

    申请日:1997-03-05

    摘要: A method of adjusting a shaped beam in a charged particle beam writing method of writing a pattern on the surface of a written target using the above shaped beam is disclosed. The above method of adjusting the above shaped beam consists of a process for measuring the point of the center of the intensity of the shaped beam projected on the surface of the written target, a process for calculating a projected position correcting amount for correcting the projected position on the surface of the written target of the shaped beam based upon the measured point of the center of the intensity and a process for correcting the projected position on the surface of the written target of the shaped beam by the obtained projected position correcting amount. According to this method of correcting the projected position of the beam based upon the point of the center of the intensity of the shaped beam, a positioning error in a connection between the parts of patterns written on the surface of the written target can be greatly reduced.

    摘要翻译: 公开了一种使用上述成形光束在写入目标的表面上写入图案的带电粒子束写入方法中调整成形光束的方法。 上述调整上述成形光束的方法由用于测量投影在被写入的目标的表面上的成形光束的强度的中心点的测量的处理,用于计算用于校正投影位置的投影位置校正量的处理 基于强度中心的测量点的成形光束的写入目标的表面,以及通过所获得的投影位​​置校正量校正成形光束的写入目标的表面上的投影位置的处理。 根据这种根据成形光束强度的中心点校正光束的投影位置的方法,可以大大减少写在写入目标表面上的图案部分之间的连接中的定位误差 。

    Electron beam device
    58.
    发明授权
    Electron beam device 有权
    电子束装置

    公开(公告)号:US08735814B2

    公开(公告)日:2014-05-27

    申请号:US13879051

    申请日:2011-10-05

    IPC分类号: G01N23/00 G21K7/00

    摘要: The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.

    摘要翻译: 电子束装置包括电子源和物镜偏转器。 电子束装置基于通过投射的电子束从材料发射的二次电子等的信号获得图像。 电子束装置还包括偏置色差校正元件,该偏置色差校正元件还包括位于比物镜偏转器更靠近电子源的电磁偏转器和具有比电磁偏转器更窄的内径的静电偏转器, 在电磁偏转器内,使得材料的高度位置与电磁偏转器重叠,并且能够施加偏移电压。 因此,可以提供一种电子束装置,通过该电子束装置可以减轻由偏转引起的几何像差(寄生像差),并且在高分辨率的宽视角上实现偏转。

    Scanning electron microscope
    59.
    发明授权
    Scanning electron microscope 有权
    扫描电子显微镜

    公开(公告)号:US08704175B2

    公开(公告)日:2014-04-22

    申请号:US13812451

    申请日:2011-08-26

    IPC分类号: H01J37/28

    摘要: Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector (201) with high-speed and high-precision, to correct the astigmatism, by using both a method of obtaining the astigmatism from the qualities of two-dimensional images to be acquired upon changing the intensity of the astigmatism corrector (201), and a method of measuring the astigmatism from the change in the position displacement of an electron beam that occurs when the electron beam is tilted using a tilt deflector (202).

    摘要翻译: 本发明提供一种扫描电子显微镜,其配备有当由电子束柱产生的散光和从测量样品的周围产生的散光存在时使用的高速和高精度散光测量装置。 该扫描电子显微镜的特征在于以高速和高精度控制像散校正器(201),以通过使用从改变后获得的二维图像的质量获得散光的方法来校正像散 散光校正器(201)的强度,以及根据使用倾斜偏转器(202)使电子束倾斜时发生的电子束的位置偏移的变化来测量像散的方法。

    CHARGED PARTICLE INSTRUMENT
    60.
    发明申请
    CHARGED PARTICLE INSTRUMENT 有权
    充电颗粒仪

    公开(公告)号:US20120286160A1

    公开(公告)日:2012-11-15

    申请号:US13451596

    申请日:2012-04-20

    IPC分类号: H01J37/28

    摘要: A charged particle instrument including a controlling and operating unit for controlling a charged particle source, deflecting means, and focus changing means and making a data for an image by an electric signal detected by a detector, and a recording unit for preserving a correction coefficient registered at each image-acquisition, in which the controlling and operating unit acquires plural images while changing a focus, and controls an optical condition such that a landing angle of a charged particle beam becomes perpendicular when an image for measurement is acquired on the basis of a position shift amount of a mark in the image and a correction coefficient registered to the recording unit.

    摘要翻译: 一种带电粒子仪器,包括用于控制带电粒子源的控制和操作单元,偏转装置和聚焦改变装置,以及通过由检测器检测的电信号为图像提供数据;以及记录单元,用于保持记录的校正系数 在每次图像获取期间,控制和操作单元在改变焦点的同时获取多个图像,并且控制光学条件,使得当基于以下步骤获得用于测量的图像时,带电粒子束的着陆角变为垂直 图像中的标记的位置偏移量和登记到记录单元的校正系数。