公开(公告)号：US09733579B2

公开(公告)日：2017-08-15

申请号：US14581632

申请日：2014-12-23

Applicant: Applied Materials, Inc.

Inventor： Sang Ki Nam ,  Peng Xie ,  Qiwei Liang ,  Ludovic Godet

IPC: G03F7/38 ,  G03F7/20 ,  G03F7/40

CPC classification number: G03F7/70733 ,  G03F7/38 ,  G03F7/40 ,  G03F7/70325

Abstract: A method of processing a substrate is disclosed herein. The method includes applying a photoresist layer comprising a photoacid generator to a substrate, wherein a first portion of the photoresist layer has been exposed unprotected by a photomask to a radiation light in a lithographic exposure process. The method also includes applying an electric field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction, wherein the electric field is applied by a first alternating pair of a positive voltage electrode and a negative voltage electrode and a second alternating pair of a positive voltage electrode and a negative voltage electrode.

公开(公告)号：US20170154797A1

公开(公告)日：2017-06-01

申请号：US14989488

申请日：2016-01-06

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, JR. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: H01L21/67 ,  G03F7/20

CPC classification number: G03F7/2035 ,  G03F7/168 ,  G03F7/26 ,  G03F7/38 ,  H01L21/68764

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US20150351166A1

公开(公告)日：2015-12-03

申请号：US14293123

申请日：2014-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael W. Stowell ,  Qiwei Liang

IPC: H05B6/80 ,  H05B6/64

CPC classification number: H05B6/80 ,  H05B6/6402 ,  H05B6/642 ,  H05B6/707 ,  H05B6/725 ,  H05B6/806

Abstract: In a processing reactor having a microwave plasma source, the microwave radiator is mounted on a rotary microwave coupling for continuous rotation.

Abstract translation: 在具有微波等离子体源的处理反应器中，微波辐射器安装在用于连续旋转的旋转微波耦合器上。

公开(公告)号：US20250022694A1

公开(公告)日：2025-01-16

申请号：US18762865

申请日：2024-07-03

Applicant: Applied Materials, Inc.

Inventor： Pranav Vijay Gadre ,  Adib M. Khan ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Hyun Joo Lee ,  Paneendra Prakash Bhat ,  Douglas A. Buchberger, JR. ,  Onkara Swamy Korasiddaramaiah ,  Vijay D. Parkhe ,  Junghoon Kim ,  Kallol Bera ,  Rupali Sahu ,  Sathya Swaroop Ganta

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  H05B6/54 ,  H05B6/62

Abstract: A substrate support assembly includes a heater plate including a dielectric material, a heater electrode embedded within the heater plate, a set of distributed purge channels formed within the heater plate, wherein the set of distributed purge channels provides a set of gas flow paths to equalize a gas flow from within the heater plate and direct the gas flow in a direction below the heater plate, a ground electrode embedded within the heater plate, and a radio frequency (RF) mesh embedded within the plate.

公开(公告)号：US12142467B2

公开(公告)日：2024-11-12

申请号：US17333533

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Keith Tatseun Wong ,  Antony K. Jan

IPC: H01J37/32 ,  C23C16/04 ,  H01L21/027 ,  H01L21/32

Abstract: The present disclosure generally relates to a substrate processing chamber, a substrate processing apparatus, and a substrate processing method for self-assembled monolayer (SAM) deposition of low vapor pressure organic molecules (OM) followed by further substrate processing, such as atomic layer deposition.

公开(公告)号：US20240234108A1

公开(公告)日：2024-07-11

申请号：US18403982

申请日：2024-01-04

Applicant: Applied Materials, Inc.

Inventor： Paneendra Prakash Bhat ,  Qiwei Liang ,  Douglas Buchberger ,  Dmitry Lubomirsky ,  Naveen Kumar Nagaraja ,  Vijay D. Parkhe

IPC: H01J37/32 ,  G03F7/00 ,  G03F7/38 ,  H01L21/683

CPC classification number: H01J37/32724 ,  G03F7/38 ,  G03F7/70708 ,  H01J37/32642 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/2007

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The electrostatic chuck body may define a backside gas lumen that extends through a surface of the substrate seat. The assemblies may include a bias electrode coupled with the electrostatic chuck body. The bias electrode may include a plurality of conductive mesas that protrude upward across the substrate seat. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include at least one chucking electrode embedded within the electrostatic chuck body. The assemblies may include at least one heater embedded within the electrostatic chuck body.

公开(公告)号：US11948828B2

公开(公告)日：2024-04-02

申请号：US16744478

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Sultan Malik ,  Srinivas D. Nemani ,  Adib M. Khan ,  Qiwei Liang

IPC: H01L21/687 ,  H01L21/677

CPC classification number: H01L21/68735 ,  H01L21/67706 ,  H01L21/67748 ,  H01L21/68707 ,  H01L21/68742

Abstract: The present disclosure generally relates to a pin-less substrate transfer apparatus and method for a processing chamber. The processing chamber includes a pedestal. The pedestal includes a pedestal plate. The pedestal plate has a radius, a top surface, and a bottom surface. The pedestal plate further includes a plurality of cut outs on a perimeter of the pedestal plate. Flat edges are disposed on opposite sides of the pedestal plate. Recesses are disposed in the bottom surface below each of the flat edges.

公开(公告)号：US11682556B2

公开(公告)日：2023-06-20

申请号：US17672305

申请日：2022-02-15

Applicant: Applied Materials, Inc.

Inventor： Jie Zhou ,  Erica Chen ,  Qiwei Liang ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

CPC classification number: H01L21/02527 ,  C23C16/02 ,  C23C16/26 ,  H01L21/0262 ,  H01L21/02425 ,  H01L21/02488

Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.

公开(公告)号：US11244808B2

公开(公告)日：2022-02-08

申请号：US15858789

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065 ,  C23C16/503 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/67

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

公开(公告)号：US11222771B2

公开(公告)日：2022-01-11

申请号：US16268488

申请日：2019-02-05

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Rohit Sharma ,  Jingyu Qiao

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  C23C16/452 ,  C23C16/50

Abstract: Gas distribution assemblies are described including a first plate and a second plate. The first plate may define a plurality of first apertures, and the second plate may define a plurality of second apertures in a first region of the second plate and a plurality of third apertures in a second region of the second plate. The second apertures may align with the first apertures. An area defined by the second region may be less than an area defined by the first region. The second plate may be sealingly coupled with the first plate to define a volume between the first plate and the second plate. The volume may be fluidly accessible from the third apertures, and fluidly isolated from the first and second apertures.