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公开(公告)号:US12020965B2
公开(公告)日:2024-06-25
申请号:US17076024
申请日:2020-10-21
Applicant: Applied Materials, Inc.
Inventor: Andrew Nguyen , Sathya Swaroop Ganta , Kallol Bera , Canfeng Lai
IPC: C23C16/00 , C23C16/513 , H01J37/32 , H01L21/00 , H01L21/02 , H01L21/677
CPC classification number: H01L21/67709 , C23C16/513 , H01J37/3266 , H01L21/02274
Abstract: Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In an embodiment, a magnet holding structure for a plasma-enhanced chemical vapor deposition chamber is provided. The magnet holding structure includes a top piece having a plurality of magnet retention members and a bottom piece having a plurality of magnet retention members. The top piece has a first inside edge and a first outside edge, and the bottom piece has a second inside edge and a second outside edge. The magnet holding structure further includes a plurality of casings. Each casing of the plurality of casings is configured to at least partially encapsulate a magnet, and each casing positioned between a magnet retention member of the top piece and a magnet retention member of the bottom piece.
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公开(公告)号:US12033835B2
公开(公告)日:2024-07-09
申请号:US16898259
申请日:2020-06-10
Applicant: Applied Materials, Inc.
Inventor: Philip Allan Kraus , Robert Moore , James Carducci , Richard Fovell , Sathya Swaroop Ganta , Karthikeyan Balaraman , Silverst Rodrigues
IPC: H01J37/32
CPC classification number: H01J37/32467 , H01J37/3222 , H01J37/3244 , H01J37/32513
Abstract: Embodiments disclosed herein include a modular microwave source array. In an embodiment, a housing assembly for the source array comprises a first conductive layer, wherein the first conductive layer comprises a first coefficient of thermal expansion (CTE), and a second conductive layer over the first conductive layer, wherein the second conductive layer comprises a second CTE that is different than the first CTE. In an embodiment, the housing assembly further comprises a plurality of openings through the housing assembly, where each opening passes through the first conductive layer and the second conductive layer.
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公开(公告)号:US20250022694A1
公开(公告)日:2025-01-16
申请号:US18762865
申请日:2024-07-03
Applicant: Applied Materials, Inc.
Inventor: Pranav Vijay Gadre , Adib M. Khan , Qiwei Liang , Dmitry Lubomirsky , Hyun Joo Lee , Paneendra Prakash Bhat , Douglas A. Buchberger, JR. , Onkara Swamy Korasiddaramaiah , Vijay D. Parkhe , Junghoon Kim , Kallol Bera , Rupali Sahu , Sathya Swaroop Ganta
IPC: H01J37/32 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/509 , H05B6/54 , H05B6/62
Abstract: A substrate support assembly includes a heater plate including a dielectric material, a heater electrode embedded within the heater plate, a set of distributed purge channels formed within the heater plate, wherein the set of distributed purge channels provides a set of gas flow paths to equalize a gas flow from within the heater plate and direct the gas flow in a direction below the heater plate, a ground electrode embedded within the heater plate, and a radio frequency (RF) mesh embedded within the plate.
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公开(公告)号:US20210391149A1
公开(公告)日:2021-12-16
申请号:US16898259
申请日:2020-06-10
Applicant: Applied Materials, Inc.
Inventor: Philip Allan Kraus , Robert Moore , James Carducci , Richard Fovell , Sathya Swaroop Ganta , Karthikeyan Balaraman , Silverst Rodrigues
IPC: H01J37/32
Abstract: Embodiments disclosed herein include a modular microwave source array. In an embodiment, a housing assembly for the source array comprises a first conductive layer, wherein the first conductive layer comprises a first coefficient of thermal expansion (CTE), and a second conductive layer over the first conductive layer, wherein the second conductive layer comprises a second CTE that is different than the first CTE. In an embodiment, the housing assembly further comprises a plurality of openings through the housing assembly, where each opening passes through the first conductive layer and the second conductive layer.
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公开(公告)号:US20240395506A1
公开(公告)日:2024-11-28
申请号:US18388250
申请日:2023-11-09
Applicant: Applied Materials, Inc.
Inventor: Kenneth Brian Doering , Xiaokang Yang , Sathya Swaroop Ganta
IPC: H01J37/32
Abstract: A microwave plasma impedance transformers comprising a thermal break and methods of use are described. The impedance transformer comprises a housing having a first end and a second end defining a length of the housing. The housing has a channel with channel walls extending through the length from the first end to the second end, and the channel has an opening in the first end of the housing with a first end diameter and an opening in the second end of the housing with a second end diameter. The first end diameter being greater than the second end diameter. The channel acts as a conical impedance transformer.
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公开(公告)号:US11984302B2
公开(公告)日:2024-05-14
申请号:US17088407
申请日:2020-11-03
Applicant: Applied Materials, Inc.
Inventor: Job George Konnoth Joseph , Sathya Swaroop Ganta , Kallol Bera , Andrew Nguyen , Jay D. Pinson, II , Akshay Dhanakshirur , Kaushik Comandoor Alayavalli , Canfeng Lai , Ren-Guan Duan , Jennifer Y. Sun , Anil Kumar Kalal , Abhishek Pandey
CPC classification number: H01J37/32669 , H01J37/20 , H01J2237/0264
Abstract: A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.
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公开(公告)号:US11959174B2
公开(公告)日:2024-04-16
申请号:US17131315
申请日:2020-12-22
Applicant: Applied Materials, Inc.
Inventor: Kallol Bera , Sathya Swaroop Ganta , Timothy Joseph Franklin , Kaushik Alayavalli , Akshay Dhanakshirur , Stephen C. Garner , Bhaskar Kumar
IPC: C23C16/52 , C23C16/505 , C23C16/54 , H01J37/32
CPC classification number: C23C16/52 , C23C16/505 , C23C16/54 , H01J37/32082 , H01J37/32174 , H01J37/3266 , H01J37/32669
Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.
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