公开(公告)号：US20210257307A1

公开(公告)日：2021-08-19

申请号：US17227983

申请日：2021-04-12

申请人： Applied Materials, Inc.

发明人： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Guan Huei SEE ,  Giback PARK ,  Giorgio CELLERE ,  Diego TONINI ,  Vincent DICAPRIO ,  Kyuil CHO

IPC分类号： H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06

摘要： The present disclosure relates to thin-form-factor reconstituted substrates and methods for forming the same. The reconstituted substrates described herein may be utilized to fabricate homogeneous or heterogeneous high-density 3D integrated devices. In one embodiment, a silicon substrate is structured by direct laser patterning to include one or more cavities and one or more vias. One or more semiconductor dies of the same or different types may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. One or more conductive interconnections are formed in the vias and may have contact points redistributed to desired surfaces of the reconstituted substrate. The reconstituted substrate may thereafter be integrated into a stacked 3D device.

公开(公告)号：US20210257306A1

公开(公告)日：2021-08-19

申请号：US17227811

申请日：2021-04-12

申请人： Applied Materials, Inc.

发明人： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Giback PARK ,  Giorgio CELLERE ,  Diego TONINI ,  Vincent DICAPRIO ,  Kyuil CHO

IPC分类号： H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06

摘要： The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.

公开(公告)号：US20210257289A1

公开(公告)日：2021-08-19

申请号：US17227837

申请日：2021-04-12

申请人： Applied Materials, Inc.

发明人： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Giback PARK ,  Kyuil CHO ,  Kurtis LESCHKIES ,  Roman GOUK ,  Chintan BUCH ,  Vincent DICAPRIO ,  Bernhard STONAS ,  Jean DELMAS

IPC分类号： H01L23/498 ,  H01L23/14 ,  H01L21/48

摘要： The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US20210249345A1

公开(公告)日：2021-08-12

申请号：US17227867

申请日：2021-04-12

申请人： Applied Materials, Inc.

发明人： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Giback PARK ,  Kyuil CHO ,  Kurtis LESCHKIES ,  Roman GOUK ,  Chintan BUCH ,  Vincent DICAPRIO ,  Bernhard STONAS ,  Jean DELMAS

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/14

摘要： The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US20210159158A1

公开(公告)日：2021-05-27

申请号：US16698680

申请日：2019-11-27

申请人： Applied Materials, Inc.

发明人： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Giback PARK ,  Kyuil CHO ,  Kurtis LESCHKIES ,  Roman GOUK ,  Chintan BUCH ,  Vincent DICAPRIO

IPC分类号： H01L23/498 ,  H01L23/14 ,  H01L21/48

摘要： The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US20190237345A1

公开(公告)日：2019-08-01

申请号：US16378140

申请日：2019-04-08

申请人： Applied Materials, Inc.

发明人： Jean DELMAS ,  Steven VERHAVERBEKE ,  Kurtis LESCHKIES

IPC分类号： H01L21/67 ,  H01L21/677 ,  F27B9/36 ,  H01L21/324

CPC分类号： H01L21/67109 ,  F27B9/36 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/67748 ,  H01L21/67754

摘要： Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.

公开(公告)号：US20190189435A1

公开(公告)日：2019-06-20

申请号：US16201095

申请日：2018-11-27

申请人： Applied Materials, Inc.

发明人： Shishi JIANG ,  Kurtis LESCHKIES ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Steven VERHAVERBEKE

IPC分类号： H01L21/02 ,  C23C8/10

摘要： Implementations described herein generally relate to methods for forming a low-k dielectric material on a semiconductor substrate. More specifically, implementations described herein relate to methods of forming a silicon oxide film at high pressure and low temperatures. In one implementation, a method of forming a silicon oxide film is provided. The method comprises loading a substrate having a silicon-containing film formed thereon into a processing region of a high-pressure vessel. The method further comprises forming a silicon oxide film on the silicon-containing film. Forming the silicon oxide film on the silicon-containing film comprises exposing the silicon-containing film to a processing gas comprising steam at a pressure greater than about 1 bar and maintaining the high-pressure vessel at a temperature between about 100 degrees Celsius and about 500 degrees Celsius.

公开(公告)号：US20190018189A1

公开(公告)日：2019-01-17

申请号：US15647348

申请日：2017-07-12

申请人： Applied Materials, Inc.

发明人： Rutger MEYER TIMMERMAN THIJSSEN ,  Steven VERHAVERBEKE ,  Joseph R. JOHNSON

IPC分类号： G02B6/122 ,  G02B6/136

摘要： Embodiments described herein generally relate to a wave guide and a method of creating a wave guide. In one embodiment, a method of forming a wave guide is disclosed herein. An inverse master substrate having a plurality of projections extending therefrom is formed. A high refractive index material is formed on a top surface of the inverse master substrate. A glass layer is positioned on a top surface of the high refractive index material. The inverse master substrate is removed from the high refractive index material.

公开(公告)号：US20180350593A1

公开(公告)日：2018-12-06

申请号：US16039224

申请日：2018-07-18

申请人： Applied Materials, Inc.

发明人： Roman GOUK ,  Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Jean DELMAS

IPC分类号： H01L21/02 ,  H01L21/687 ,  H01L21/67

摘要： A substrate support apparatus is provided. The apparatus includes a circular base plate and one or more spacers disposed about a circumference of the base plate. The spacers may extend from a top surface of the base plate and a ring body may be coupled to the spacers. The ring body may be spaced from the base plate to define apertures between the base plate and the ring body. One or more support posts may be coupled to the base plate and extend therefrom. The support posts may be coupled to the base plate at positions radially inward from an inner surface of the ring body.

公开(公告)号：US20180323063A1

公开(公告)日：2018-11-08

申请号：US15586208

申请日：2017-05-03

申请人： Applied Materials, Inc.

发明人： Jean DELMAS ,  Steven VERHAVERBEKE

IPC分类号： H01L21/02 ,  H01L21/67 ,  B08B7/00 ,  F25J3/02

CPC分类号： H01L21/02101 ,  B08B7/0021 ,  F25J3/0266 ,  F25J2220/02 ,  H01L21/67023

摘要： A method and apparatus for processing a substrate is provided. A feed stream of carbon dioxide liquid is supplied under pressure from a feed supply to a purification vessel. The carbon dioxide liquid in the purification vessel is distilled to form a purified carbon dioxide gas in a single stage distillation process. The processing method includes condensing the purified carbon dioxide gas in the condenser by heat exchange with a refrigerant from a refrigeration system to form a purified carbon dioxide liquid. The purified carbon dioxide liquid is heated to a target temperature above a critical point to change the purified carbon dioxide liquid to a supercritical carbon dioxide fluid. The processing method includes using the supercritical carbon dioxide fluid to clean a substrate disposed in a processing chamber.