公开(公告)号：US20180286674A1

公开(公告)日：2018-10-04

申请号：US15936751

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Rui CHENG ,  Abhijit Basu MALLICK

IPC: H01L21/02

CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02592 ,  H01L21/02617 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/76224 ,  H01L29/0649

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon film are provided. First, a substrate having features formed in a first surface thereof is positioned in a processing chamber. A conformal deposition process is then performed to deposit a conformal silicon liner layer on the sidewalls of the features and the exposed first surface of the substrate between the features. A flowable deposition process is then performed to deposit a flowable silicon layer over the conformal silicon liner layer. A curing process is then performed to increase silicon density of the flowable silicon layer. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition two-step process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20190237325A1

公开(公告)日：2019-08-01

申请号：US15880702

申请日：2018-01-26

Applicant: Applied Materials, Inc.

Inventor： Fei WANG ,  Miaojun WANG ,  Shishi JIANG ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Robert Jan VISSER

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/0273 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/31116 ,  H01L21/31138

Abstract: Embodiments described herein relate to methods for forming patterns of semiconductor devices utilizing parylene gapfill layers deposited using a thermal chemical vapor deposition (CVD) process. In one embodiment the patterns of semiconductor devices are formed by forming amorphous carbon (a-C) mandrels on first layers, depositing amorphous silicon (a-Si) layers over the a-C mandrels and the first layers, etching the a-Si spacer layers to expose top surfaces of the a-C mandrels and to expose the first layers, depositing parylene gapfill layers using the CVD process, removing portions of the parylene gapfill layers until the top surfaces are exposed; and removing the a-Si spacer layers to expose the first layers and form patterns of semiconductor devices having a-C mandrels and parylene mandrels.

公开(公告)号：US20180350621A1

公开(公告)日：2018-12-06

申请号：US15995698

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Abhijit Basu MALLICK ,  Kurtis LESCHKIES

IPC: H01L21/311 ,  H01L21/02

Abstract: Embodiments of the disclosure generally relate to a method for dry stripping a boron carbide layer deposited on a semiconductor substrate. In one embodiment, the method includes loading the substrate with the boron carbide layer into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure between about 500 Torr and 60 bar, heating the pressure vessel to a temperature greater than a condensation point of the processing gas and removing one or more products of a reaction between the processing gas and the boron carbide layer from the pressure vessel.

公开(公告)号：US20180350563A1

公开(公告)日：2018-12-06

申请号：US15991877

申请日：2018-05-29

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Abhijit Basu MALLICK ,  Kurtis LESCHKIES ,  Steven VERHAVERBEKE ,  Sanjay KAMATH ,  Zongbin WANG ,  Hanwen ZHANG ,  Shishi JIANG

IPC: H01J37/32

Abstract: Embodiments of the disclosure generally relate to a method of processing a semiconductor substrate at a temperature less than 250 degrees Celsius. In one embodiment, the method includes loading the substrate with the deposited film into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure greater than about 2 bars, and maintaining the pressure vessel at a temperature between a condensation point of the processing gas and about 250 degrees Celsius.

公开(公告)号：US20210210339A1

公开(公告)日：2021-07-08

申请号：US15778167

申请日：2017-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Pramit MANNA ,  Rui CHENG ,  Abhijit Basu MALLICK ,  Shishi JIANG

IPC: H01L21/02

Abstract: A method for forming a conformal hermetic silicon nitride film. The method includes using thermal chemical vapor deposition with a polysilane gas to produce an ultra-conformal amorphous silicon film on a substrate, then treating the film with ammonia or nitrogen plasmas to convert the amorphous silicon film to a conformal hermetic silicon nitride. In some embodiments, the amorphous silicon deposition and the plasma treatment are performed in the same processing chamber. In some embodiments, the amorphous silicon deposition and the plasma treatment are repeated until a desired silicon nitride film thickness is reached.

公开(公告)号：US20210025058A1

公开(公告)日：2021-01-28

申请号：US17041403

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Shishi JIANG ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Suresh Chand SETH ,  Srinivas D. NEMANI

IPC: C23C16/505 ,  H01L21/3205 ,  H01L21/321 ,  H01J37/32 ,  C23C16/24 ,  C23C16/56

Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process. The FCVD process includes positioning the substrate on the substrate support, flowing a processing gas into the processing volume, forming a deposition plasma of the processing gas, exposing the surface of the substrate to the deposition plasma, and depositing the amorphous silicon layer on the surface of the substrate.

公开(公告)号：US20200075329A1

公开(公告)日：2020-03-05

申请号：US16679899

申请日：2019-11-11

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/04 ,  H01L21/762 ,  C23C16/24 ,  C23C16/505

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon (a-Si) film that involves pretreating the surface of the substrate to modify the underlying hydroxy-terminated silicon (Si—OH) or hydrogen-terminated silicon (Si—H) surface to oxynitride-terminated silicon (Si—ON) or nitride-terminated silicon (Si—N) and enhance the subsequent a-Si deposition are provided. First, a substrate having features formed in a first surface of the substrate is provided. The surface of the substrate is then pretreated to enhance the surface of the substrate for the flowable deposition of amorphous silicon that follows. A flowable deposition process is then performed to deposit a flowable silicon layer over the surface of the substrate. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20180294154A1

公开(公告)日：2018-10-11

申请号：US15936740

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  H01L21/762 ,  C23C16/04

CPC classification number: H01L21/02532 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/24 ,  C23C16/505 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76224

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon (a-Si) film that involves pretreating the surface of the substrate to modify the underlying hydroxy-terminated silicon (Si—OH) or hydrogen-terminated silicon (Si—H) surface to oxynitride-terminated silicon (Si—ON) or nitride-terminated silicon (Si—N) and enhance the subsequent a-Si deposition are provided. First, a substrate having features formed in a first surface of the substrate is provided. The surface of the substrate is then pretreated to enhance the surface of the substrate for the flowable deposition of amorphous silicon that follows. A flowable deposition process is then performed to deposit a flowable silicon layer over the surface of the substrate. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20200161178A1

公开(公告)日：2020-05-21

申请号：US16675385

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Shishi JIANG ,  Kurtis LESCHKIES ,  Pramit MANNA ,  Abhijit MALLICK

IPC: H01L21/768 ,  H01L21/02

Abstract: Embodiments described herein relate to methods of seam-free gapfilling and seam healing that can be carried out using a chamber operable to maintain a supra-atmospheric pressure (e.g., a pressure greater than atmospheric pressure). One embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber and exposing the one or more features of the substrate to at least one precursor at a pressure of about 1 bar or greater. Another embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber. Each of the one or more features has seams of a material. The seams of the material are exposed to at least one precursor at a pressure of about 1 bar or greater.

公开(公告)号：US20200051815A1

公开(公告)日：2020-02-13

申请号：US16659194

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Rui CHENG ,  Abhijit Basu MALLICK

IPC: H01L21/02

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon film are provided. First, a substrate having features formed in a first surface thereof is positioned in a processing chamber. A conformal deposition process is then performed to deposit a conformal silicon liner layer on the sidewalls of the features and the exposed first surface of the substrate between the features. A flowable deposition process is then performed to deposit a flowable silicon layer over the conformal silicon liner layer. A curing process is then performed to increase silicon density of the flowable silicon layer. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition two-step process to realize seam-free gapfilling between features with high quality amorphous silicon film.