公开(公告)号：US20180374696A1

公开(公告)日：2018-12-27

申请号：US15844989

申请日：2017-12-18

Applicant: Applied Materials, Inc.

Inventor： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Roman GOUK ,  Guan Huei SEE ,  Yu GU ,  Arvind SUNDARRAJAN

IPC: H01L21/02 ,  H01L23/538 ,  H01L21/027 ,  H01L21/311 ,  G03F7/00 ,  H01L21/48

Abstract: Embodiments of the present disclosure generally describe methods of forming one or more device terminal redistribution layers using imprint lithography. The methods disclosed herein enable the formation of high aspect ratio interconnect structures at lower costs than conventional photolithography and etch processes. Further, the processes and methods described herein desirably remove, reduce, and/or substantially eliminate voids in the surrounding polymer layer formed during the polymer deposition process or subsequent thereto.

公开(公告)号：US20170148624A1

公开(公告)日：2017-05-25

申请号：US15325419

申请日：2015-07-10

Applicant: Applied Materials, Inc.

Inventor： Steven VERHAVERBEKE ,  Han-Wen CHEN ,  Roman GOUK ,  Kurtis LESCHKIES

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/0206 ,  H01J37/32357 ,  H01L21/02101 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02334 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67207

Abstract: The present disclosure generally relates to apparatus and methods for forming a low-k dielectric material on a substrate. The method includes various substrate processing steps utilizing a wet processing chamber, a solvent exchange chamber, and a supercritical fluid chamber. More specifically, a dielectric material in an aqueous solution may be deposited on the substrate and a solvent exchange process may be performed to prepare the substrate for a supercritical drying process. During the supercritical drying process, liquids present in the solution and remaining on the substrate from the solvent exchange process are removed via sublimation during the supercritical drying process. The resulting dielectric material formed on the substrate may be considered a silica aerogel which exhibits a very low k-value.

公开(公告)号：US20230282498A1

公开(公告)日：2023-09-07

申请号：US18195234

申请日：2023-05-09

Applicant: Applied Materials, Inc.

Inventor： Kurtis LESCHKIES ,  Jeffrey L. FRANKLIN ,  Wei-Sheng LEI ,  Steven VERHAVERBEKE ,  Jean DELMAS ,  Han-Wen CHEN ,  Giback PARK

IPC: H01L21/67 ,  H01L21/48 ,  B23K26/0622 ,  B23K26/382

CPC classification number: H01L21/67121 ,  H01L21/486 ,  B23K26/0622 ,  B23K26/382 ,  H01L23/49827

Abstract: The present disclosure relates to systems and methods for fabricating semiconductor packages, and more particularly, for forming features in semiconductor packages by laser ablation. In one embodiment, the laser systems and methods described herein can be utilized to pattern a substrate to be utilized as a package frame for a semiconductor package having one or more interconnections formed therethrough and/or one or more semiconductor dies disposed therein. The laser systems described herein can produce tunable laser beams for forming features in a substrate or other package structure. Specifically, frequency, pulse width, pulse shape, and pulse energy of laser beams are tunable based on desired sizes of patterned features and on the material in which the patterned features are formed. The adjustability of the laser beams enables rapid and accurate formation of features in semiconductor substrates and packages with controlled depth and topography.

公开(公告)号：US20220278248A1

公开(公告)日：2022-09-01

申请号：US17747408

申请日：2022-05-18

Applicant: Applied Materials, Inc.

Inventor： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Giback PARK

IPC: H01L31/18 ,  H01L21/027 ,  H01L21/304 ,  H01L21/768 ,  H01L21/308 ,  H01L21/306

Abstract: The present disclosure relates to methods and apparatus for structuring a semiconductor substrate. In one embodiment, a method of substrate structuring includes applying a resist layer to a substrate optionally disposed on a carrier. The resist layer is patterned using ultraviolet radiation or laser ablation. The patterned portions of the resist layer are then transferred onto the substrate by micro-blasting to form desired features in the substrate while unexposed or un-ablated portions of the resist layer shield the rest of the substrate. The substrate is then exposed to an etch process and a de-bonding process to remove the resist layer and release the carrier.

公开(公告)号：US20210346983A1

公开(公告)日：2021-11-11

申请号：US16871302

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Kurtis LESCHKIES ,  Wei-Sheng LEI ,  Jeffrey L. FRANKLIN ,  Jean DELMAS ,  Han-Wen CHEN ,  Giback PARK ,  Steven VERHAVERBEKE

IPC: B23K26/0622 ,  B23K26/382 ,  B23K26/40 ,  H01L21/48 ,  H01L25/00

Abstract: A method of fabricating a frame to enclose one or more semiconductor dies includes forming one or more features including one or more cavities and one or more through-vias in a substrate by a first laser ablation process, filling the one or more through-vias with a dielectric material, and forming a via-in-via in the dielectric material filled in each of the one or more through-vias by a second laser ablation process. The one or more cavities is configured to enclose one or more semiconductor dies therein. In the first laser ablation process, frequency, pulse width, and pulse energy of a first pulsed laser beam to irradiate the substrate are tuned based on a depth of the one or more features. In the second laser ablation process, frequency, pulse width, and pulse energy of a second pulsed laser beam to irradiate the dielectric material are tuned based on a depth of the via-in-via.

公开(公告)号：US20190287823A1

公开(公告)日：2019-09-19

申请号：US16422477

申请日：2019-05-24

Applicant: Applied Materials, Inc.

Inventor： Steven VERHAVERBEKE ,  Han-Wen CHEN ,  Roman GOUK

IPC: H01L21/67 ,  B08B7/00 ,  B08B3/08 ,  H01L21/02 ,  H01L21/677

Abstract: Embodiments of the present disclosure generally relate to a method of cleaning a substrate. More specifically, embodiments of the present disclosure relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. In an embodiment, a method of cleaning a substrate includes exposing a substrate having high aspect ratio features formed thereon to a first solvent to remove an amount of a residual cleaning solution disposed on a surface of the substrate, exposing the surface of the substrate to a second solvent to remove the first solvent disposed on the surface of the substrate, exposing the surface of the substrate to a supercritical fluid to remove the second solvent disposed on the surface of the substrate, and exposing the surface of the substrate to electromagnetic energy.

公开(公告)号：US20190214247A1

公开(公告)日：2019-07-11

申请号：US16352631

申请日：2019-03-13

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Jean DELMAS

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02101 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/6719

Abstract: Embodiments described herein generally relate to a processing chamber having a reduced volume for performing supercritical drying processes or other phase transition processes. The chamber includes a substrate support moveably disposed on a first track and a door moveably disposed on a second track. The substrate support and door may be configured to move independently of one another and the chamber may be configured to minimize vertical movement of the substrate within the chamber.

公开(公告)号：US20190181019A1

公开(公告)日：2019-06-13

申请号：US16276866

申请日：2019-02-15

Applicant: Applied Materials, Inc.

Inventor： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Roman GOUK ,  Guan Huei SEE ,  Yu GU ,  Arvind SUNDARRAJAN ,  Kyuil CHO ,  Colin Costano NEIKIRK ,  Boyi FU

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/13 ,  H01L23/00 ,  H01L21/48 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  G03F7/00

Abstract: Embodiments of the present disclosure generally describe methods for minimizing the occurrence and the extent of die shift during the formation of a reconstituted substrate in fan-out wafer level packaging processes and reconstituted substrates formed therefrom. Die shift is a process defect that occurs when a die (device) moves from its intended position within a reconstituted substrate during the formation thereof. Generally, the reconstituted substrates disclosed herein include a device immobilization layer and/or a plurality of device immobilization beads over and/or adjacent to a plurality of singular devices (individual dies), and a cured epoxy molding compound formed there over. The device immobilization layer and/or the plurality of device immobilization beads immobilize the plurality of singular devices and prevents them from shifting on the carrier substrate during the molding process.

公开(公告)号：US20170098537A1

公开(公告)日：2017-04-06

申请号：US15268173

申请日：2016-09-16

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Jean DELMAS

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02101 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/6719

Abstract: Embodiments described herein generally relate to a processing chamber having a reduced volume for performing supercritical drying processes or other phase transition processes. The chamber includes a substrate support moveably disposed on a first track and a door moveably disposed on a second track. The substrate support and door may be configured to move independently of one another and the chamber may be configured to minimize vertical movement of the substrate within the chamber.

公开(公告)号：US20230187370A1

公开(公告)日：2023-06-15

申请号：US18075141

申请日：2022-12-05

Applicant: Applied Materials, Inc.

Inventor： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Giback PARK ,  Giorgio CELLERE ,  Diego TONINI ,  Vincent DICAPRIO ,  Kyuil CHO

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06

CPC classification number: H01L23/5389 ,  H01L21/486 ,  H01L21/4864 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/105 ,  H01L23/66 ,  H01Q1/2283 ,  H01Q1/243 ,  H05K1/0243 ,  H01L21/50 ,  H01L21/76802 ,  H01L23/5385 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2225/1035 ,  H01L2225/107 ,  H01L2021/60007

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.