公开(公告)号：US07094333B2

公开(公告)日：2006-08-22

申请号：US10726935

申请日：2003-12-03

申请人： Ralph T. Yang ,  Arturo J. Hernandez-Maldonado ,  Frances H. Yang ,  Akira Takahashi

发明人： Ralph T. Yang ,  Arturo J. Hernandez-Maldonado ,  Frances H. Yang ,  Akira Takahashi

IPC分类号： C10G29/00

CPC分类号： C10G25/05 ,  B01J20/186 ,  C10G25/03

摘要： A method for removing thiophene and thiophene compounds from liquid fuel includes contacting the liquid fuel with an adsorbent which preferentially adsorbs the thiophene and thiophene compounds. The adsorption takes place at a selected temperature and pressure, thereby producing a non-adsorbed component and a thiophene/thiophene compound-rich adsorbed component. The adsorbent includes either a metal or a metal cation that is adapted to form π-complexation bonds with the thiophene and/or thiophene compounds, and the preferential adsorption occurs by π-complexation. A further method includes selective removal of aromatic compounds from a mixture of aromatic and aliphatic compounds.

摘要翻译： 从液体燃料中除去噻吩和噻吩化合物的方法包括使液体燃料与优先吸附噻吩和噻吩化合物的吸附剂接触。 吸附在选定的温度和压力下进行，从而产生非吸附组分和富含噻吩/噻吩化合物的吸附组分。 吸附剂包括适于与噻吩和/或噻吩化合物形成π-络合键的金属或金属阳离子，并且优先吸附通过π-络合而发生。 另一种方法包括从芳族和脂族化合物的混合物中选择性除去芳族化合物。

公开(公告)号：US20060094173A1

公开(公告)日：2006-05-04

申请号：US11311365

申请日：2005-12-20

申请人： Akira Takahashi

发明人： Akira Takahashi

IPC分类号： H01L21/84

CPC分类号： H01L29/66772 ,  H01L21/743 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78648 ,  H01L29/78654

摘要： In a method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, substrate-biasing between an SOI transistor and the silicon substrate is performed via a plug. As a result, the contact hole for the substrate-biasing does not need to pass through an insulating layer, a silicon layer, and an interlayer insulating layer. Therefore, the interlayer insulating layer can be made to have shallow depth. Ions can be implanted to the surface of the substrate via the contact hole for substrate biasing. As a result, contact holes for substrate-biasing can be formed without the contact holes for substrate-biasing causing an opening fault.

摘要翻译： 在形成提供给基板的固定电位的接触的绝缘体上硅FET的方法中，通过插头进行SOI晶体管和硅衬底之间的衬底偏置。 结果，用于衬底偏压的接触孔不需要通过绝缘层，硅层和层间绝缘层。 因此，可以使层间绝缘层的深度较浅。 离子可以通过用于衬底偏压的接触孔植入衬底的表面。 结果，可以形成用于基板偏压的接触孔，而不会产生用于基板偏置的接触孔，从而导致打开故障。

公开(公告)号：US07029574B2

公开(公告)日：2006-04-18

申请号：US10393962

申请日：2003-03-21

申请人： Ralph T. Yang ,  Frances H. Yang ,  Akira Takahashi ,  Arturo J. Hernandez-Maldonado

发明人： Ralph T. Yang ,  Frances H. Yang ,  Akira Takahashi ,  Arturo J. Hernandez-Maldonado

IPC分类号： C10G29/10

CPC分类号： B01J20/186 ,  C10G25/03 ,  C10G25/05

摘要： A method for removing thiophene and thiophene compounds from liquid fuel includes contacting the liquid fuel with an adsorbent which preferentially adsorbs the thiophene and thiophene compounds. The adsorption takes place at a selected temperature and pressure, thereby producing a non-adsorbed component and a thiophene/thiophene compound-rich adsorbed component. The adsorbent includes either a metal or a metal ion that is adapted to form π-complexation bonds with the thiophene and/or thiophene compounds, and the preferential adsorption occurs by π-complexation. A further method includes selective removal of aromatic compounds from a mixture of aromatic and aliphatic compounds.

摘要翻译： 从液体燃料中除去噻吩和噻吩化合物的方法包括使液体燃料与优先吸附噻吩和噻吩化合物的吸附剂接触。 吸附在选定的温度和压力下进行，从而产生非吸附组分和富含噻吩/噻吩化合物的吸附组分。 吸附剂包括适于与噻吩和/或噻吩化合物形成π-络合键的金属或金属离子，并且通过π络合发生优先吸附。 另一种方法包括从芳族和脂族化合物的混合物中选择性除去芳族化合物。

公开(公告)号：US20060035096A1

公开(公告)日：2006-02-16

申请号：US10507126

申请日：2003-05-16

申请人： Masayuki Tsutsumi ,  Hisato Kobayashi ,  Keizo Kawahara ,  Shigeto Yoshida ,  Shinsuke Yamaguchi ,  Kazutaka Okamoto ,  Akira Takahashi ,  Eiji Kumagai ,  Akinobu Nagara ,  Yoshiko Akitomo ,  Kazumoto Imai ,  Naonobu Oda

发明人： Masayuki Tsutsumi ,  Hisato Kobayashi ,  Keizo Kawahara ,  Shigeto Yoshida ,  Shinsuke Yamaguchi ,  Kazutaka Okamoto ,  Akira Takahashi ,  Eiji Kumagai ,  Akinobu Nagara ,  Yoshiko Akitomo ,  Kazumoto Imai ,  Naonobu Oda

IPC分类号： B32B27/00

CPC分类号： C08J7/047 ,  C08J2325/06 ,  Y10T428/28 ,  Y10T428/2878 ,  Y10T428/2887 ,  Y10T428/2891 ,  Y10T428/2896 ,  Y10T428/31573 ,  Y10T428/31583 ,  Y10T428/31587 ,  Y10T428/31721 ,  Y10T428/3175 ,  Y10T428/31757 ,  Y10T428/31786 ,  Y10T428/31797 ,  Y10T428/31801 ,  Y10T428/31855 ,  Y10T428/31909 ,  Y10T428/31913 ,  Y10T428/31928 ,  Y10T428/31935 ,  Y10T428/31938

摘要： An oriented syndiotactic polystyrene-based film composed of an oriented film made of a syndiotactic styrene polymer and an adhesiveness-improving layer formed from a specific water-dispersible resin on at least one surface of the oriented film, which is excellent in the tight adhesion between the oriented film and the adhesiveness-improving layer, the adhesion between the adhesiveness-improving layer and an ink layer or laminate layer applied thereon, economical efficiency, recyclability, and environmental compatibility in production. It is particularly preferable that the film be produced by applying the aqueous dispersion of the water-dispersible resin on unstretched or uniaxially stretched film to form the adhesiveness-improving layer, stretching the obtained laminate uni- or bi-axially at least one time, and then heat-treating the resulting laminate.

公开(公告)号：US06995049B2

公开(公告)日：2006-02-07

申请号：US10445859

申请日：2003-05-28

申请人： Akira Takahashi

发明人： Akira Takahashi

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66772 ,  H01L21/743 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78648 ,  H01L29/78654

摘要： In a method for forming a silicon-on-insulator FET having a contact that provides a fixed potential to a substrate, the substrate-biasing between the SOI transistor and the silicon substrate is performed via a plug. As a result, a contact hole for the substrate-biasing does not need to pass through the insulating layer, the silicon layer, and the interlayer insulating layer of the structure. Therefore, the interlayer insulating layer can be made to have shallow depth. Ions can thus be implanted to the surface of the substrate via the contact hole for substrate-biasing. The contact hole for substrate-biasing can be formed without causing an opening fault.

摘要翻译： 在形成具有向衬底提供固定电位的接触的绝缘体上硅FET的方法中，通过插头来执行SOI晶体管和硅衬底之间的衬底偏置。 结果，用于基板偏置的接触孔不需要通过该结构的绝缘层，硅层和层间绝缘层。 因此，可以使层间绝缘层的深度较浅。 因此，离子可以经由用于衬底偏置的接触孔植入到衬底的表面。 可以形成用于基板偏置的接触孔而不引起打开故障。

公开(公告)号：US06939786B2

公开(公告)日：2005-09-06

申请号：US10779752

申请日：2004-02-18

申请人： Akira Takahashi

发明人： Akira Takahashi

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/088 ,  H01L29/78 ,  H01L21/3205

CPC分类号： H01L21/76897 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device having self-aligned contact structure with side wall spacers and offset nitride films. The method includes forming the side wall spacers as having lower side wall spacers that are composed of silicon oxide films and that are in contact with lower sides of gate electrode side walls, and as having upper side wall spacers that are composed of silicon nitride films and that are in contact with upper sides of the gate electrodes side walls. A distance is thus formed between the device substrate and an interface between the silicon nitride film and the silicon oxide film. This suppresses the hot carrier phenomenon and the occurence of poor contact.

摘要翻译： 一种制造具有侧壁间隔物和偏移氮化物膜的自对准接触结构的半导体器件的方法。 该方法包括将侧壁间隔物形成为具有由氧化硅膜构成并与栅电极侧壁的下侧接触的下侧壁间隔物，以及具有由氮化硅膜构成的上侧壁间隔物， 其与栅电极侧壁的上侧接触。 因此在器件基板和氮化硅膜与氧化硅膜之间的界面之间形成距离。 这样就抑制了热载体现象和接触不良的发生。

公开(公告)号：US20050186792A1

公开(公告)日：2005-08-25

申请号：US11055770

申请日：2005-02-11

申请人： Akira Takahashi

发明人： Akira Takahashi

IPC分类号： H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/336 ,  H01L21/44 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L21/76897 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/823475

摘要： In a manufacturing method of a semiconductor device, a metallic gate electrode film, a protective film and an offset nitride film are formed on a semiconductor substrate to compose a stacked structure. An insulating film which covers the stacked structure is etched to expose the offset nitride film, and the exposed offset nitride film is etched to expose the protective film. The exposed protective film may be etched to expose the metallic gate electrode film under predetermined etching conditions. An etching rate of the protective film is greater than that of the metallic gate electrode film. The etching of the insulating film and the etching of the exposed offset nitride film may form a contact hole. Alternatively, a refractory metallic film may be formed on the exposed protective film in the contact hole, which is chemically reacted with the protective film to form a conductive film on the metallic gate electrode film. A conductive plug is formed in the contact hole.

摘要翻译： 在半导体装置的制造方法中，在半导体基板上形成金属栅电极膜，保护膜和偏移氮化物膜，构成层叠结构。 蚀刻覆盖堆叠结构的绝缘膜，以露出偏移氮化物膜，并且暴露的偏移氮化物膜被蚀刻以露出保护膜。 可以蚀刻暴露的保护膜，以在预定的蚀刻条件下暴露金属栅电极膜。 保护膜的蚀刻速率大于金属栅电极膜的蚀刻速率。 绝缘膜的蚀刻和暴露的偏移氮化物膜的蚀刻可以形成接触孔。 或者，可以在接触孔中暴露的保护膜上形成难熔金属膜，该保护膜与保护膜发生化学反应，以在金属栅电极膜上形成导电膜。 导电插塞形成在接触孔中。

公开(公告)号：US06927537B2

公开(公告)日：2005-08-09

申请号：US10745479

申请日：2003-12-29

申请人： Akira Takahashi

发明人： Akira Takahashi

IPC分类号： B32B9/00 ,  B32B19/00 ,  C09K11/06 ,  H01J1/62 ,  H01J63/04 ,  H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H05B33/14 ,  H05B33/22

CPC分类号： H01L51/5048 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0081 ,  H01L51/5012

摘要： An organic electroluminescence device comprising an anode layer, a cathode layer, a light-emitting layer present between the anode layer and the cathode layer, and a hole transporting thin film layer present between the light-emitting layer and the anode layer, wherein the hole transporting thin film layer in contact with the anode layer, contains at least 5 mass % of a polymer compound, and the value of the lowest unoccupied molecular orbit of the thin film layer is at least 2.1 eV.

摘要翻译： 一种有机电致发光元件，其特征在于，具有阳极层，阴极层，存在于所述阳极层和所述阴极层之间的发光层，以及存在于所述发光层与所述阳极层之间的空穴传输性薄膜层， 输送与阳极层接触的薄膜层，含有至少5质量％的高分子化合物，薄膜层的最低未占分子轨道的值为2.1eV以上。

公开(公告)号：US20050154505A1

公开(公告)日：2005-07-14

申请号：US11001584

申请日：2004-12-02

申请人： Koji Nakamura ,  Hiroshi Ando ,  Akira Kamiya ,  Nobuaki Kawahara ,  Kazuya Yasuda ,  Masaru Kakizaki ,  Nozomi Kitagawa ,  Tomoo Aoki ,  Yoshio Shinoda ,  Naoyuki Aoki ,  Shinji Kashiwada ,  Junya Inada ,  Akira Takahashi ,  Takayuki Fujikawa

发明人： Koji Nakamura ,  Hiroshi Ando ,  Akira Kamiya ,  Nobuaki Kawahara ,  Kazuya Yasuda ,  Masaru Kakizaki ,  Nozomi Kitagawa ,  Tomoo Aoki ,  Yoshio Shinoda ,  Naoyuki Aoki ,  Shinji Kashiwada ,  Junya Inada ,  Akira Takahashi ,  Takayuki Fujikawa

IPC分类号： G01C21/36 ,  G02B27/00 ,  G02B27/01 ,  G06F17/00

CPC分类号： G01C21/365 ,  G02B27/01 ,  G02B27/0101 ,  G02B2027/0138 ,  G02B2027/014 ,  G08G1/166

摘要： A vehicle information display system includes a head-up display for reflecting an image on a windshield of a vehicle and displaying the image so that a driver recognizes the image as a virtual image. Information is collected for being displayed by the head-up display. A circumstance of the vehicle, a circumstance of surrounding of the vehicle, or a circumstance of the driver is detected. The collected information is classified in accordance with a detection result. Then, display contents of the head-up display are controlled in accordance with a classification result.

摘要翻译： 车辆信息显示系统包括用于将图像反映在车辆的挡风玻璃上并且显示图像的平视显示器，使得驾驶员将图像识别为虚像。 收集由平视显示器显示的信息。 检测到车辆的情况，车辆的周围环境或驾驶员的情况。 收集的信息根据检测结果进行分类。 然后，根据分类结果来控制平视显示器的显示内容。

公开(公告)号：US20050084192A1

公开(公告)日：2005-04-21

申请号：US10929438

申请日：2004-08-31

申请人： Noriyuki Takeo ,  Satoshi Kadokawa ,  Akira Takahashi

发明人： Noriyuki Takeo ,  Satoshi Kadokawa ,  Akira Takahashi

IPC分类号： F16C9/02 ,  F16C9/04 ,  F16C19/26 ,  F16C33/60 ,  F16C33/64 ,  F16C32/02

CPC分类号： F16C33/64 ,  F16C9/02 ,  F16C9/04 ,  F16C19/26 ,  F16C33/60 ,  F16C41/008 ,  F16C2360/22 ,  Y10S384/906 ,  Y10T29/49643

摘要： A roller bearing for rotatably supporting a rotating shaft of an internal combustion engine between a main body and a cap of the internal combustion engine. The roller bearing including: a plurality of rollers; a retainer which is cirumferentially splittable and supports the plurality of rollers; and an outer race which is cirumferentially splittable and forms a raceway surface for the plurality of rollers. The retainer is split into a plurality of retaining members. The outer race is split into a plurality of race plates. At least one of the race plates is provided with one of a projection and a cavity to be engaged with one of the main body and the cap to restrict a relative movement between the one of the race plates and the one of the cylinder head and the cap.

摘要翻译： 一种用于在内燃机的主体和盖子之间可旋转地支撑内燃机的旋转轴的滚子轴承。 滚子轴承包括：多个滚子; 保持器，其被圆周地可分开并支撑所述多个辊; 以及外圈，其圆周地可分开，并且形成用于多个辊的滚道表面。 保持器被分成多个保持构件。 外圈分为多个座圈板。 所述座板中的至少一个设置有与所述主体和所述盖中的一个接合的突起和空腔中的一个，以限制所述座板中的一个与所述气缸盖和所述盖中的所述一个之间的相对运动 帽。