公开(公告)号：US06732007B1

公开(公告)日：2004-05-04

申请号：US10164133

申请日：2002-06-05

申请人： Alexander J. Pasadyn ,  Christopher A. Bode

发明人： Alexander J. Pasadyn ,  Christopher A. Bode

IPC分类号： G06F1900

CPC分类号： H01L21/67276

摘要： A method includes retrieving current state information associated with a process tool. A dynamic qualification recipe is generated based on the current state information. The dynamic qualification recipe is provided to the process tool for subsequent processing of at least one test workpiece. A system includes a process tool and a qualification recipe controller. The qualification recipe controller is configured to retrieve current state information associated with the process tool, generate a dynamic qualification recipe based on the current state information, and provide the dynamic qualification recipe to the process tool for subsequent processing of at least one test workpiece.

摘要翻译： 一种方法包括检索与处理工具相关联的当前状态信息。 基于当前状态信息生成动态限定条件。 将动态鉴定配方提供给处理工具用于随后处理至少一个测试工件。 系统包括处理工具和资格配方控制器。 鉴定配方控制器被配置为检索与处理工具相关联的当前状态信息，基于当前状态信息生成动态鉴定配方，并且向处理工具提供动态鉴定配方以用于随后处理至少一个测试工件。

公开(公告)号：US06725121B1

公开(公告)日：2004-04-20

申请号：US09864692

申请日：2001-05-24

申请人： Alexander J. Pasadyn ,  Anthony J. Toprac

发明人： Alexander J. Pasadyn ,  Anthony J. Toprac

IPC分类号： G06F1900

CPC分类号： G05B19/41865 ,  G05B2219/32237 ,  G05B2219/32249 ,  Y02P90/20 ,  Y02P90/86

摘要： A method for processing an interrupted workpiece includes providing a dynamic control model defining the processing characteristics of a processing tool throughout a processing run; providing a partially processed workpiece; determining an extent of processing metric for the partially processed workpiece; and determining at least one operating recipe parameter of the processing tool based on the dynamic control model and the extent of processing metric. A manufacturing system includes a processing tool and a process controller. The processing tool is adapted to process a partially processed workpiece in accordance with an operating recipe. The process controller is adapted to determine an extent of processing metric for the partially processed workpiece and determine at least one parameter of the operating recipe based on a dynamic control model defining the processing characteristics of the processing tool throughout a processing run and the extent of processing metric.

摘要翻译： 一种用于处理中断的工件的方法包括提供定义整个处理过程中处理工具的处理特性的动态控制模型; 提供部分加工的工件; 确定部分加工的工件的加工度量的程度; 以及基于所述动态控制模型和所述处理度量的程度来确定所述处理工具的至少一个操作配方参数。 制造系统包括处理工具和过程控制器。 处理工具适于根据操作配方处理部分处理的工件。 过程控制器适于确定部分处理的工件的处理度量的程度，并且基于在整个处理运行中定义处理工具的处理特性的动态控制模型以及处理程度来确定操作配方的至少一个参数 度量。

公开(公告)号：US06708129B1

公开(公告)日：2004-03-16

申请号：US10023225

申请日：2001-12-13

申请人： Alexander J. Pasadyn ,  Matthew A. Purdy

发明人： Alexander J. Pasadyn ,  Matthew A. Purdy

IPC分类号： G06F1900

CPC分类号： H01L21/67253

摘要： A method and an apparatus for performing a process control using partial measurement data. A process operation is performed on a semiconductor wafer. Inline metrology data related to the process of the semiconductor wafer is acquired. A partial measurement data acquisition process is performed based upon the inline metrology data, the partial measurement data acquisition process comprising determining a time period for acquiring the inline metrology data, determining a number of wafers to be sampled based upon the time period, and determining a number of wafer sites for data acquisition. At least one of a feedback adjustment on a second semiconductor wafer and a feed-forward adjustment relating to a subsequent processing of the first semiconductor wafer based upon the partial measurement data acquisition process is performed.

摘要翻译： 一种使用部分测量数据执行过程控制的方法和装置。 在半导体晶片上进行处理操作。 获取与半导体晶片的工艺相关的内联测量数据。 基于内联计量数据执行部分测量数据获取过程，部分测量数据获取过程包括确定用于获取在线测量数据的时间段，基于该时间段确定要采样的晶片数量，以及确定 用于数据采集的晶圆站点数。 执行基于部分测量数据获取处理的第二半导体晶片上的反馈调整和与第一半导体晶片的后续处理有关的前馈调整中的至少一个。

公开(公告)号：US06687561B1

公开(公告)日：2004-02-03

申请号：US10115432

申请日：2002-04-03

申请人： Alexander J. Pasadyn ,  Christopher A. Bode

发明人： Alexander J. Pasadyn ,  Christopher A. Bode

IPC分类号： G06F1900

CPC分类号： G05B19/41875 ,  G05B23/0243 ,  G05B2219/32191 ,  G05B2219/32199 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/22

摘要： A method includes processing a plurality of workpieces in accordance with an operating recipe. A defectivity metric is determined based on the operating recipe. A sampling plan for measuring a characteristic of selected workpieces processed using the operating recipe is determined based on the defectivity metric. A manufacturing system includes a process tool and a sampling controller. The process tool is configured to process a plurality of workpieces in accordance with an operating recipe. The sampling controller is configured to determine a defectivity metric based on the operating recipe and determine a sampling plan for measuring a characteristic of selected workpieces processed using the operating recipe based on the defectivity metric.

摘要翻译： 一种方法包括根据操作配方处理多个工件。 基于操作配方确定缺陷度量。 基于缺陷率度量确定用于测量使用操作配方处理的所选择的工件的特性的采样计划。 制造系统包括处理工具和采样控制器。 处理工具被配置为根据操作配方处理多个工件。 采样控制器被配置为基于操作配方来确定缺陷度量，并且基于缺陷率度量确定用于测量使用操作配方处理的所选择的工件的特性的采样计划。

公开(公告)号：US06678570B1

公开(公告)日：2004-01-13

申请号：US09891898

申请日：2001-06-26

申请人： Alexander J. Pasadyn ,  Thomas J. Sonderman

发明人： Alexander J. Pasadyn ,  Thomas J. Sonderman

IPC分类号： G06F1900

CPC分类号： G05B19/41865 ,  Y02P90/20 ,  Y10T29/41

摘要： A method for determining output characteristics of a workpiece includes generating a tool state trace related to the processing of a workpiece in a tool; comparing the generated tool state trace to a library of reference tool state traces, each reference tool state trace having an output characteristic metric; selecting a reference tool state trace closest to the generated tool state trace; and determining an output characteristic of the workpiece based on the output characteristic metric associated with the selected reference tool state trace. A manufacturing system includes a tool and a tool state monitor. The tool is adapted to process a workpiece. The tool state monitor is adapted to generate a tool state trace related to the processing of a workpiece in the tool, compare the generated tool state trace to a library of reference tool state traces, each reference tool state trace having an output characteristic metric, select a reference tool state trace closest to the generated tool state trace, and determine an output characteristic of the workpiece based on the output characteristic metric associated with the selected reference tool state trace.

摘要翻译： 一种用于确定工件的输出特性的方法包括产生与工具中的工件的加工相关的工具状态迹线; 将生成的刀具状态跟踪与参考刀具状态轨迹库进行比较，每个参考刀具状态轨迹具有输出特征量度; 选择最接近生成的刀具状态轨迹的参考刀具状态轨迹; 以及基于与所选择的参考工具状态轨迹相关联的输出特性度量来确定工件的输出特性。 制造系统包括工具和工具状态监视器。 该工具适用于加工工件。 刀具状态监视器适于生成与刀具中的工件的处理相关的刀具状态跟踪，将生成的刀具状态跟踪与参考刀具状态轨迹库进行比较，每个刀具状态轨迹具有输出特性量度，选择 最接近生成的刀具状态轨迹的参考刀具状态轨迹，并且基于与所选择的参考刀具状态轨迹相关联的输出特性量度来确定工件的输出特性。

公开(公告)号：US06660539B1

公开(公告)日：2003-12-09

申请号：US10040299

申请日：2001-11-07

申请人： Thomas J. Sonderman ,  Alexander J. Pasadyn

发明人： Thomas J. Sonderman ,  Alexander J. Pasadyn

IPC分类号： H01L2166

CPC分类号： H01L22/20 ,  H01L21/31116 ,  H01L21/31138

摘要： A method comprising performing an etch process recipe comprised of an endpoint etch process and a timed over-etch process on each of a first plurality of substrates to form at least one opening in each layer of insulating material, determining a duration of the endpoint etch process performed on the first plurality of substrates, determining a duration of the timed over-etch process of the etch process recipe to be performed on a second plurality of substrates based upon the determined duration of the endpoint etch process performed on the first plurality of substrates, and performing the etch process recipe comprised of the endpoint etch process and the timed over-etch process of the determined duration on the second plurality of semiconducting substrates. A system comprised of an etch tool for forming at least one opening in a layer of insulating material formed above each of a first plurality of semiconducting substrates by performing an etch recipe comprised of an endpoint etch process and a timed over-etch process on each of the substrates, and a controller that determines a duration of the endpoint etch process performed on the first plurality of substrates and determines a duration of the timed over-etch process of the etch recipe to be performed on a second plurality of semiconducting substrates based upon the determined duration of the endpoint etch process performed on the first plurality of substrates.

摘要翻译： 一种方法，包括在第一多个基板中的每一个上执行包括端点蚀刻工艺和定时过蚀刻工艺的蚀刻工艺配方，以在每层绝缘材料中形成至少一个开口，确定端点蚀刻工艺的持续时间 在所述第一多个基板上执行，基于在所述第一多个基板上执行的所述端点蚀刻工艺的所确定的持续时间，确定将在第二多个基板上执行的所述蚀刻工艺配方的定时过蚀刻工艺的持续时间， 以及执行包括端点蚀刻工艺和在第二多个半导体衬底上确定的持续时间的定时过蚀刻工艺的蚀刻工艺配方。 一种系统，包括用于在绝缘材料层中形成至少一个开口的蚀刻工具，所述绝缘材料层通过执行由端点蚀刻工艺和定时过蚀刻工艺组成的蚀刻配方，所述蚀刻配方由第一多个半导体衬底 基板和控制器，其确定在第一多个基板上执行的端点蚀刻工艺的持续时间，并且基于第二多个半导体基板确定要对第二多个半导体基板执行的蚀刻配方的定时过蚀刻工艺的持续时间 确定在第一多个基板上执行的端点蚀刻工艺的持续时间。

公开(公告)号：US06610550B1

公开(公告)日：2003-08-26

申请号：US10114782

申请日：2002-04-03

申请人： Alexander J. Pasadyn ,  Christopher A. Bode

发明人： Alexander J. Pasadyn ,  Christopher A. Bode

IPC分类号： H01L2166

CPC分类号： H01L22/20 ,  H01L2223/54453

摘要： A method and an apparatus for correlating error data with detect data. A semiconductor wafer in a first lot is processed. Defect data based upon analysis of the processed semiconductor wafer is acquired. Electrical test data based upon analysis of the processed semiconductor wafer is acquired. The electrical test data is acquired by performing a wafer electrical testing process on the processed semiconductor wafer. The electrical test data is correlated with the defect data to produce correlated data. At least one of the following is performed: a yield prediction or the performance prediction of a second lot based upon the correlated data. The yield prediction comprises predicting a percentage yield of acceptable semiconductor wafers in the second lot. The performance prediction comprises predicting the performance of the acceptable semiconductor wafers.

摘要翻译： 一种用于将错误数据与检测数据相关的方法和装置。 处理第一批中的半导体晶片。 获取基于处理的半导体晶片的分析的缺陷数据。 获取基于处理的半导体晶片的分析的电气测试数据。 通过在经处理的半导体晶片上进行晶片电气测试处理来获得电测试数据。 电气测试数据与缺陷数据相关，以产生相关数据。 执行以下中的至少一个：基于相关数据的产量预测或第二批次的性能预测。 产量预测包括预测第二批中可接受的半导体晶片的百分比产率。 性能预测包括预测可接受的半导体晶片的性能。

公开(公告)号：US06540591B1

公开(公告)日：2003-04-01

申请号：US09837606

申请日：2001-04-18

申请人： Alexander J. Pasadyn ,  Christopher H. Raeder ,  Anthony J. Toprac

发明人： Alexander J. Pasadyn ,  Christopher H. Raeder ,  Anthony J. Toprac

IPC分类号： B24B100

CPC分类号： B24B37/013 ,  B24B21/10 ,  B24B37/042 ,  B24B49/04

摘要： A method for polishing wafers includes providing a wafer having a process layer formed thereon; providing a polishing tool having a plurality of control zones and being adapted to polish the process layer based on an operating recipe, the operating recipe having a control variable corresponding to each of the control zones; measuring a pre-polish thickness profile of the process layer; comparing the pre-polish thickness profile to a target thickness profile to determine a desired removal profile; determining values for the control variables associated with the control zones based on the desired removal profile; and modifying the operating recipe of the polishing tool based on the values determined for the control variables. A processing line includes a polishing tool, a metrology tool, and a process controller. The polishing tool is adapted to polish a wafer having a process layer formed thereon based on an operating recipe. The polishing tool includes a plurality of control zones and the operating recipe includes a control variable corresponding to each of the control zones. The metrology tool is adapted to measure a pre-polish thickness profile of the process layer. The process controller is adapted to compare the pre-polish thickness profile to a target thickness profile to determine a desired removal profile, determine values for the control variables associated with the control zones based on the desired removal profile, and modify the operating recipe of the polishing tool based on the values determined for the control variables.

摘要翻译： 抛光晶片的方法包括提供其上形成有工艺层的晶片; 提供具有多个控制区域并且适于基于操作配方抛光所述处理层的抛光工具，所述操作配方具有对应于每个所述控制区域的控制变量; 测量处理层的预抛光厚度轮廓; 将预抛光厚度轮廓与目标厚度轮廓进行比较以确定期望的移除轮廓; 基于期望的移除轮廓来确定与控制区域相关联的控制变量的值; 并且基于为控制变量确定的值来修改抛光工具的操作配方。 处理线包括抛光工具，计量工具和过程控制器。 抛光工具适于基于操作配方抛光其上形成有工艺层的晶片。 抛光工具包括多个控制区，操作配方包括对应于每个控制区的控制变量。 测量工具适用于测量工艺层的预抛光厚度轮廓。 过程控制器适于将预抛光厚度分布与目标厚度分布进行比较以确定期望的去除曲线，基于期望的去除曲线来确定与控制区域相关联的控制变量的值，并修改其中的操作配方 基于为控制变量确定的值的抛光工具。

公开(公告)号：US06444481B1

公开(公告)日：2002-09-03

申请号：US09897626

申请日：2001-07-02

申请人： Alexander J. Pasadyn ,  Thomas J. Sonderman

发明人： Alexander J. Pasadyn ,  Thomas J. Sonderman

IPC分类号： H01L2100

CPC分类号： H01L22/26 ,  H01L21/2885 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for controlling a plating process includes plating a process layer on a wafer in accordance with a recipe; measuring a thickness of the process layer; and determining at least one plating parameter of the recipe for subsequently formed process layers based on the measured thickness. A processing line includes a plating tool, a metrology tool, and a process controller. The plating tool is adapted to form a process layer on a wafer in accordance with a recipe. The metrology tool is adapted to measure a thickness of the process layer. The process controller is adapted to determine at least one plating parameter of the recipe for subsequently formed process layers based on the measured thickness.

摘要翻译： 一种控制电镀工艺的方法包括根据配方在晶片上镀覆工艺层; 测量处理层的厚度; 以及基于测量的厚度，确定随后形成的处理层的配方的至少一个电镀参数。 处理线包括电镀工具，计量工具和过程控制器。 电镀工具适于根据配方在晶片上形成工艺层。 测量工具适用于测量工艺层的厚度。 过程控制器适于基于测量的厚度来确定随后形成的处理层的配方的至少一个电镀参数。