摘要:
A complementary metal oxide semiconductor integrated circuit may be formed with a PMOS device formed using a replacement metal gate and a raised source drain. The raised source drain may be formed of epitaxially deposited silicon germanium material that is doped p-type. The replacement metal gate process results in a metal gate electrode and may involve the-removal of a nitride etch stop layer.
摘要:
A semiconductor device is described. That semiconductor device comprises a high-k gate dielectric layer that is formed on a substrate that applies strain to the high-k gate dielectric layer, and a metal gate electrode that is formed on the high-k gate dielectric layer.
摘要:
A transistor may be formed of different layers of silicon germanium, a lowest layer having a graded germanium concentration and upper layers having constant germanium concentrations such that the lowest layer is of the form Si1-xGex. The highest layer may be of the form Si1-yGey on the PMOS side. A source and drain may be formed of epitaxial silicon germanium of the form Si1-zGez on the PMOS side. In some embodiments, x is greater than y and z is greater than x in the PMOS device. Thus, a PMOS device may be formed with both uniaxial compressive stress in the channel direction and in-plane biaxial compressive stress. This combination of stress may result in higher mobility and increased device performance in some cases.
摘要翻译:晶体管可以由不同层的硅锗形成,具有梯度锗浓度的最低层和具有恒定锗浓度的上层,使得最底层具有Si 1-x Ge Ge > x SUB>。 在PMOS侧,最高层可以是Si 1-y N y O y的形式。 源极和漏极可以由PMOS侧的Si 1-z N z z z的外延硅锗形成。 在一些实施例中,在PMOS器件中,x大于y且z大于x。 因此,PMOS器件可以在通道方向上具有单轴压应力和面内双轴压应力。 在某些情况下,应力的这种组合可能导致较高的移动性和增加的设备性能。
摘要:
A quantum well transistor or high electron mobility transistor may be formed using a replacement metal gate process. A dummy gate electrode may be used to define sidewall spacers and source drain contact metallizations. The dummy gate electrode may be removed and the remaining structure used as a mask to etch a doped layer to form sources and drains self-aligned to said opening. A high dielectric constant material may coat the sides of said opening and then a metal gate electrode may be deposited. As a result, the sources and drains are self-aligned to the metal gate electrode. In addition, the metal gate electrode is isolated from an underlying barrier layer by the high dielectric constant material.
摘要:
A method for making a titanium carbide layer is described. That method comprises alternately introducing a carbon containing precursor and a titanium containing precursor into a chemical vapor deposition reactor, while a substrate is maintained at a selected temperature. The reactor is operated for a sufficient time, and pulse times are selected for the carbon containing precursor and the titanium containing precursor, to form a titanium carbide layer of a desired thickness and workfunction on the substrate.
摘要:
A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
摘要:
A sacrificial gate structure, including nitride and fill layers, may be replaced with a metal gate electrode. The metal gate electrode may again be covered with a nitride layer covered by a fill layer. The replacement of the nitride and fill layers may reintroduce strain and provide an etch stop.
摘要:
A metal oxide layer on a substrate is converted at least partly to a metal layer. At least part of the metal layer is covered by an oxidation resistant cover. The covered layer and underlying metal may be removed, for example, using acid.
摘要:
Complementary metal oxide semiconductor integrated circuits may be formed with NMOS and PMOS transistors having different gate dielectrics. The different gate dielectrics may be formed, for example, by a replacement process. The gate dielectrics may differ in material, thickness, or formation techniques, as a few examples.
摘要:
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition.