公开(公告)号：US20180350671A1

公开(公告)日：2018-12-06

申请号：US15986189

申请日：2018-05-22

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/532 ,  H01L21/02 ,  H01L23/528 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/285

CPC classification number: H01L21/76877 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/28568 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/76843 ,  H01L21/76888 ,  H01L23/528 ,  H01L23/53266 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US09711360B2

公开(公告)日：2017-07-18

申请号：US15203032

申请日：2016-07-06

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Kwangduk Douglas Lee ,  Abdul Aziz Khaja ,  Amit Kumar Bansal ,  Bok Hoen Kim ,  Prashant Kumar Kulshreshtha

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/455

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/5096 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31122

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.