公开(公告)号：US5451693A

公开(公告)日：1995-09-19

申请号：US301880

申请日：1994-09-07

申请人： Tohru Kubota ,  Akira Yamamoto ,  Muneo Kudo

发明人： Tohru Kubota ,  Akira Yamamoto ,  Muneo Kudo

IPC分类号： C04B41/49 ,  C07F7/18

CPC分类号： C07F7/188 ,  C04B41/4922 ,  C07F7/184 ,  C07F7/1876

摘要： Herein disclosed are a tert-butyl cycloalkyl dialkoxysilane compound which is quite useful as a water repellant for treating the surface of a variety of construction materials such as wood, concrete and marble and which can easily be used, and a method for preparing the compound. A Grignard reagent represented by the formula: R.sup.1 MgX is reacted with a silane compound represented by the formula: (CH.sub.3).sub.3 CSiH(OR.sup.2).sub.2. Then the resulting silane compound: (CH.sub.3).sub.3 CSiHR.sup.1 (OR.sup.2) is further reacted with an alcohol: R.sup.2 OH in the presence of a catalyst to give a tert-butyl cycloalkyl dialkoxysilane compound: (CH.sub.3).sub.3 CSiR.sup.1 (OR.sup.2).sub.2.

摘要翻译： 本文公开了叔丁基环烷基二烷氧基硅烷化合物，其作为用于处理各种建筑材料如木材，混凝土和大理石的表面的防水剂是非常有用的，并且可以容易地使用，以及制备该化合物的方法。 由式：R1MgX表示的格利雅试剂与由式（CH3）3CSiH（OR2）2表示的硅烷化合物反应。 然后将得到的硅烷化合物：（CH3）3CSiHR1（OR2）与醇：R2OH在催化剂存在下进一步反应，得到叔丁基环烷基二烷氧基硅烷化合物：（CH3）3CSiR1（OR2）2。

公开(公告)号：US5440063A

公开(公告)日：1995-08-08

申请号：US335415

申请日：1994-11-03

申请人： Masaki Takeuchi ,  Akira Yamamoto ,  Mikio Endo ,  Tohru Kubota ,  Yasufumi Kubota

发明人： Masaki Takeuchi ,  Akira Yamamoto ,  Mikio Endo ,  Tohru Kubota ,  Yasufumi Kubota

IPC分类号： C07B61/00 ,  C07F7/12 ,  C07F7/08

CPC分类号： C07F7/126 ,  C07F7/123

摘要： Dimethylchlorosilane and a triorganochlorosilane of the formula: R.sup.1 R.sup.2 R.sup.3 SiCl wherein R.sup.1, R.sup.2, and R.sup.3 are independently selected from monovalent hydrocarbon groups are concurrently prepared by reacting dimethyldichlorosilane with a SiH bond-containing silane compound of the formula: R.sup.1 R.sup.2 R.sup.3 SiH in the presence of a Lewis acid catalyst. The method is especially effective for concomitant preparation of dimethylchlorosilane and trimethylchlorosilane or t-butyldimethylchlorosilane in an inexpensive, simple, safe manner and in high yields.

摘要翻译： 二甲基氯硅烷和式R 1 R 2 R 3 SiCl其中R 1，R 2和R 3独立地选自一价烃基的三有机氯硅烷同时通过在路易斯酸催化剂存在下使二甲基二氯硅烷与下式的R 1 R 2 R 3 SiH的含SiH键的硅烷化合物反应制备： 。 该方法对于以廉价，简单，安全的方式并以高产率同时制备二甲基氯硅烷和三甲基氯硅烷或叔丁基二甲基氯硅烷是特别有效的。

公开(公告)号：US5425988A

公开(公告)日：1995-06-20

申请号：US127288

申请日：1993-09-27

申请人： Kazufumi Ogawa ,  Norihisa Mino ,  Toshinobu Ishihara ,  Mikio Endo ,  Tohru Kubota ,  Yasuhisa Tanaka

发明人： Kazufumi Ogawa ,  Norihisa Mino ,  Toshinobu Ishihara ,  Mikio Endo ,  Tohru Kubota ,  Yasuhisa Tanaka

IPC分类号： B05D1/18 ,  C10M105/76 ,  C10M107/50 ,  C10N40/18 ,  G11B5/187 ,  G11B5/255 ,  G11B5/64 ,  G11B5/72 ,  G11B5/725 ,  G11B5/00

CPC分类号： B82Y30/00 ,  B05D1/185 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/255 ,  G11B5/72 ,  G11B5/725 ,  Y10S428/90 ,  Y10T428/261 ,  Y10T428/268 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31663

摘要： A recording and reproducing device is provided. The device comprises a recording medium, a head giving and receiving recording signals to or from the recording medium, and a mechanism section and a circuit section giving and receiving the recording signals, wherein at least one protective film, and at least one fluorine-containing monomolecular film are formed in this order on the recording layer of the recording medium or on the surface of the head which comes into contact with said recording layer, wherein said protective film is a metal film, oxidized metal film, semi-conductor film, oxidized semi-conductor film, or organic monomolecular film, and wherein said fluorine-containing monomolecular film is formed by the chemical adsorption of a specific-type of silane compound that contains a perfluoroalkyl group at the molecular end on the surface of the protective film.

摘要翻译： 提供了一种记录和再现装置。 该装置包括记录介质，向记录介质提供和接收记录信号的磁头，以及提供和接收记录信号的机构部分和电路部分，其中至少一个保护膜和至少一个含氟 单分子膜依次形成在记录介质的记录层上或与记录层接触的头的表面上，其中所述保护膜是金属膜，氧化金属膜，半导体膜，氧化物 半导体膜或有机单分子膜，并且其中所述含氟单分子膜通过在保护膜的表面上的分子末端的含有全氟烷基的特定类型的硅烷化合物的化学吸附而形成。

公开(公告)号：US5326895A

公开(公告)日：1994-07-05

申请号：US976845

申请日：1992-11-16

申请人： Tohru Kubota ,  Toshinobu Ishihara ,  Mikio Endo ,  Katsuhiro Uehara

发明人： Tohru Kubota ,  Toshinobu Ishihara ,  Mikio Endo ,  Katsuhiro Uehara

IPC分类号： C07F7/18 ,  C07F7/14 ,  C08F30/08 ,  C07F7/08

CPC分类号： C07F7/14 ,  C07F7/1832 ,  C08F30/08

摘要： 3-(Vinylbenzyloxy)propylsilane compounds represented by the general formula, CH.sub.2 CH.PHI. CH.sub.2 OCH.sub. CH.sub.2 CH.sub.2 SiR.sup.1.sub.n (OR.sup.2).sub.3-n (wherein R.sup.1 and R.sup.2 each represent a hydrocarbon residue containing 1 to 4 carbon atoms, and n represents an integer from 0 to 2) are provided as novel styrene skeleton-containing alkoxysilane compounds which are highly useful as silane coupling agent or polymerizing monomer.

摘要翻译： 由通式CH 2 CH PHI CH 2 OCHCH 2 CH 2 SiRnn（OR 2）3-n表示的3-（乙烯基苄氧基）丙基硅烷化合物（其中R 1和R 2各自表示含有1至4个碳原子的烃基，n表示0的整数 提供作为硅烷偶联剂或聚合单体非常有用的新型含苯乙烯骨架的烷氧基硅烷化合物。

公开(公告)号：US5254439A

公开(公告)日：1993-10-19

申请号：US854696

申请日：1992-03-20

申请人： Yoshiyuki Tani ,  Masayuki Endou ,  Kazufumi Ogawa ,  Yasuhisa Tanaka ,  Toshinobu Ishihara ,  Tohru Kubota

发明人： Yoshiyuki Tani ,  Masayuki Endou ,  Kazufumi Ogawa ,  Yasuhisa Tanaka ,  Toshinobu Ishihara ,  Tohru Kubota

IPC分类号： C08G77/48 ,  C08G77/60 ,  G03F7/075 ,  G03F7/30

CPC分类号： C08G77/48 ,  C08G77/60 ,  G03F7/0754 ,  G03F7/0757 ,  Y10S430/146

摘要： There is disclosed a polymer having linear --Si--O--Si-- bonds and --Si--Si--Si-- bonds, or polysilane bonds that are greater than trisilane bonds, sensitive to far ultraviolet rays. The polymer is prepared by polymerizing a dichlorosiloxane alone or with at least one dichlorosilane in an inert solvent in the presence of sodium. The polymer undergoes oxidation with oxygen plasma to form SiO.sub.2 resistant to oxygen dry etching, exhibits absorption peaks only in far ultraviolet, and is suitable for preparing a single layered resist or an upper resist of a two-layered system.

摘要翻译： 公开了具有对远紫外线敏感的线性-Si-O-Si键和-Si-Si-Si键或大于丙硅烷键的聚硅烷键的聚合物。 聚合物是通过在惰性溶剂中在钠的存在下单独或与至少一种二氯硅烷聚合二氯硅烷来制备的。 聚合物用氧等离子体进行氧化以形成耐氧干蚀刻的SiO 2，仅在远紫外线下显示吸收峰，并且适用于制备双层系统的单层抗蚀剂或上抗蚀剂。

公开(公告)号：US5126419A

公开(公告)日：1992-06-30

申请号：US622152

申请日：1990-12-03

申请人： Yoshiyuki Tani ,  Masayuki Endou ,  Kazufumi Ogawa ,  Yasuhisa Tanaka ,  Toshinobu Ishihara ,  Tohru Kubota

发明人： Yoshiyuki Tani ,  Masayuki Endou ,  Kazufumi Ogawa ,  Yasuhisa Tanaka ,  Toshinobu Ishihara ,  Tohru Kubota

IPC分类号： C08G77/48 ,  C08G77/60 ,  G03F7/075

CPC分类号： G03F7/0754 ,  C08G77/48 ,  C08G77/60 ,  G03F7/0757

摘要： A polymer having linear --Si--O--Si-- bonds and --Si--Si--Si-- bonds, or polysilane bonds more than trisilane bonds, sensitive to far ultraviolet rays. The light-sensitive polymer can be prepared by copolymerizing a dichlorodisiloxane and a dichlorosilane in an inert solvent in the presence of sodium. The polymer undergoes oxidation with oxygen plasma to form SiO.sub.2 resistant to oxygen dry etching, exhibits absorption peaks only in far ultraviolet and is suitable for preparing a single layered resist or an upper resist of a two layered resist system.

摘要翻译： 具有线性-Si-O-Si-键和-Si-Si-Si-键的聚合物，或聚硅烷键多于丙硅烷键，对远紫外线敏感。 感光性聚合物可以通过在惰性溶剂中在钠的存在下使二氯二硅氧烷和二氯硅烷共聚来制备。 聚合物用氧等离子体进行氧化以形成耐氧干蚀刻的SiO 2，仅在远紫外线下表现出吸收峰，并且适用于制备双层抗蚀剂体系的单层抗蚀剂或上抗蚀剂。

公开(公告)号：US4921989A

公开(公告)日：1990-05-01

申请号：US359897

申请日：1989-06-01

申请人： Toshinobu Ishihara ,  Mikio Endo ,  Tohru Kubota ,  Yasuhisa Tanaka

发明人： Toshinobu Ishihara ,  Mikio Endo ,  Tohru Kubota ,  Yasuhisa Tanaka

IPC分类号： C07F7/12 ,  C07F7/18

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C07F7/12 ,  C07F7/1832 ,  C07F7/1836

摘要： The novel organosilicon compound of the invention is an .omega.-silylalkynyl silane compound represented by the general formula R.sub.3 SiC.tbd.C(CH.sub.2).sub.n Si(CH.sub.3).sub.m X.sub.3-m, in which each R is, independently from the others, a hydrogen atom, lower alkyl group or aryl group, X is a halogen atom or a lower alkoxy group, the subscript m is 0,1 or 2 and the subscript n is an integer in the range from 10 to 30 which forms a uniform monomolecular layer on a substrate surface with silyl ethynyl groups arranged in alignment. The compound can be prepared by a Grignard reaction starting form an .omega.-silylalkynyl halide represented by the general formula R.sub.3 SiC.tbd.C(CH.sub.2).sub.n Y, in which R and n each have the same meaning as defined above and Y is a halogen atom, and a methyl alkoxy or halosilane of the formula (CH.sub.3).sub.m SiX.sub.4-m, in which X and m each have the same meaning as defined before.

摘要翻译： 本发明的新型有机硅化合物是通式为R 3 SiC 3 CF（CH 2）n Si（CH 3）m X 3-m表示的ω-甲硅烷基炔基硅烷化合物，其中R各自独立地为氢原子，低级烷基 基团或芳基，X为卤素原子或低级烷氧基，下标m为0,1或2，下标n为10〜30的整数，在基材表面上形成均匀的单分子层， 甲硅烷基乙炔基排列成对齐。 该化合物可以通过由通式R3SiC 3BOND C（CH2）nY表示的ω-甲硅烷基炔基卤化物的格利雅反应制备，其中R和n各自具有与上述相同的含义，Y是卤素原子， 式（CH3）mSiX4-m的甲基烷氧基或卤代硅烷，其中X和m各自具有与上述相同的含义。

公开(公告)号：US4883569A

公开(公告)日：1989-11-28

申请号：US154691

申请日：1988-02-11

申请人： Mikio Endo ,  Minoru Takamizawa ,  Toshinobu Ishihara ,  Tohru Kubota ,  Toshio Shinohara

发明人： Mikio Endo ,  Minoru Takamizawa ,  Toshinobu Ishihara ,  Tohru Kubota ,  Toshio Shinohara

IPC分类号： C07F7/12 ,  C07B61/00 ,  C07F7/08 ,  C07F7/14 ,  C07F7/18

CPC分类号： C07F7/0801 ,  C07F7/14 ,  C07F7/1876

摘要： Cycloalkyl silane compound such as cyclohexyl methyl dichlorosilane can be efficiently prepared by the photochemically induced hydrosilylation reaction. For example, an equimolar mixture of cyclohexene and methyl dichlorosilane with admixture of a catalytic amount of an alcoholic solution of, chloroplatinic acid, is irradiated at a temperature up to 70.degree. C. with ultraviolet light so that the hydrosilylation reaction takes place and proceeds almost to completeness without deactivation of the platinum catalyst to give the desired product in a yield of 90% or even higher.

公开(公告)号：US09567354B2

公开(公告)日：2017-02-14

申请号：US13370426

申请日：2012-02-10

申请人： Yoichi Tonomura ,  Tohru Kubota ,  Takayuki Honma

发明人： Yoichi Tonomura ,  Tohru Kubota ,  Takayuki Honma

IPC分类号： C07F7/18

CPC分类号： C07F7/1804

摘要： Novel amino acid-modified silane compounds having a weakly acidic amino group and a weakly basic carboxyl group are useful as a surface treating agent or textile treating agent.

摘要翻译： 具有弱酸性氨基和弱碱性羧基的新型氨基酸改性硅烷化合物可用作表面处理剂或纺织品处理剂。

公开(公告)号：US09126838B2

公开(公告)日：2015-09-08

申请号：US13822673

申请日：2011-09-02

申请人： Masayuki Hasegawa ,  Yoichi Tonomura ,  Tohru Kubota ,  Takeshi Aoyama ,  Shuji Tanaka

发明人： Masayuki Hasegawa ,  Yoichi Tonomura ,  Tohru Kubota ,  Takeshi Aoyama ,  Shuji Tanaka

IPC分类号： C01B33/08 ,  C01B33/107

CPC分类号： C01B33/10794 ,  C01B33/1071 ,  C01B33/10763 ,  C01B33/10778

摘要： The method comprises at least three steps of a hydrogenation step (101) and/or a chlorination step (102), an impurity conversion step (103), and a purification step (104). In the impurity conversion step (103), an aldehyde compound represented by the general formula Ar—R—CHO (Ar; denotes a substituted or unsubstituted aryl group, R; denotes an organic group having two or more carbon atoms) is added to convert donor impurities and acceptor impurities contained in a chlorosilane distillate to a high-boiling substance. The chlorosilane distillate after the donor impurities and acceptor impurities have been converted to a high-boiling substance is sent to the purification step (104). In the purification step (104), high purity chlorosilanes from which the donor impurities and acceptor impurities have been thoroughly removed are obtained by using a distillation column or the like, where the high purity chlorosilanes are recovered outside the system from the top of the column.

摘要翻译： 该方法包括氢化步骤（101）和/或氯化步骤（102），杂质转化步骤（103）和纯化步骤（104）的至少三个步骤。 在杂质转化步骤（103）中，添加由通式Ar-R-CHO（Ar;表示取代或未取代的芳基R表示具有两个或更多个碳原子的有机基团）表示的醛化合物以转化 供体杂质和包含在氯硅烷馏出物中的受主杂质转化成高沸点物质。 将供体杂质和受体杂质转化为高沸点物质后的氯硅烷馏出物送至纯化步骤（104）。 在纯化步骤（104）中，通过使用蒸馏塔等获得供体杂质和受体杂质被彻底除去的高纯度氯硅烷，其中高纯度氯硅烷从塔顶返回到系统外部 。