公开(公告)号：US07524761B2

公开(公告)日：2009-04-28

申请号：US11776905

申请日：2007-07-12

申请人： Soo Hyun Kim ,  Baek Mann Kim ,  Young Jin Lee ,  Sun Woo Hwang ,  Dong Ha Jung ,  Jeong Tae Kim

发明人： Soo Hyun Kim ,  Baek Mann Kim ,  Young Jin Lee ,  Sun Woo Hwang ,  Dong Ha Jung ,  Jeong Tae Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/76826 ,  H01L21/76838 ,  H01L27/10885 ,  H01L27/10888

摘要： A semiconductor memory device is manufactured by: forming a hole by etching an interlayer insulation film formed over a semiconductor substrate; forming a barrier film over the interlayer insulation film including a surface of the hole; forming a first metal film over the barrier film so as to fill in the hole; forming a bit line contact plug in the hole by removing the first metal film and the barrier film so as to expose the interlayer insulation film; carrying out a gas treatment to a surface of the interlayer insulation film including the bit line contact plug so as to promote a growth of metal nucleation; forming a second metal film over the gas treated interlayer insulation film; and forming a bit line in contact with the bit line contact plug by etching the second metal film.

摘要翻译： 半导体存储器件通过：通过蚀刻形成在半导体衬底上的层间绝缘膜来形成孔; 在包括所述孔的表面的所述层间绝缘膜上形成阻挡膜; 在所述阻挡膜上形成第一金属膜以填充所述孔; 通过去除第一金属膜和阻挡膜以形成层间绝缘膜，从而在孔中形成位线接触插塞; 对包含位线接触插塞的层间绝缘膜的表面进行气体处理，以促进金属成核的生长; 在气体处理的层间绝缘膜上形成第二金属膜; 并通过蚀刻第二金属膜形成与位线接触插塞接触的位线。

公开(公告)号：US20080157369A1

公开(公告)日：2008-07-03

申请号：US11755852

申请日：2007-05-31

申请人： Jeong Tae Kim ,  Baek Mann Kim ,  Soo Hyun Kim ,  Young Jin Lee ,  Dong Ha Jung

发明人： Jeong Tae Kim ,  Baek Mann Kim ,  Soo Hyun Kim ,  Young Jin Lee ,  Dong Ha Jung

IPC分类号： H01L23/52 ,  H01L21/3205

CPC分类号： H01L21/76843 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L23/5226 ,  H01L23/53214 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multi-layered metal line of a semiconductor device includes a semiconductor substrate; a lower metal line formed on the semiconductor substrate and recessed on a surface thereof; an insulation layer formed on the semiconductor substrate including the lower metal line and having a damascene pattern for exposing a recessed portion of the lower metal line and for delimiting an upper metal line forming region; a glue layer formed on a surface of the recessed portion of the lower metal line; a first diffusion barrier formed on the glue layer to fill the recessed portion of the lower metal line; a second diffusion barrier formed on the glue layer and the first diffusion barrier; a third diffusion barrier formed on the second diffusion barrier and a surface of the damascene pattern; and an upper metal line formed on the third diffusion barrier to fill the damascene pattern.

摘要翻译： 半导体器件的多层金属线包括半导体衬底; 形成在半导体衬底上并在其表面上凹陷的下金属线; 形成在所述半导体衬底上的绝缘层，所述绝缘层包括所述下金属线并且具有用于暴露所述下金属线的凹陷部分并限定上金属线形成区域的镶嵌图案; 形成在下金属线的凹部的表面上的胶层; 形成在所述胶层上以填充所述下金属线的凹部的第一扩散阻挡层; 形成在所述胶层和所述第一扩散阻挡层上的第二扩散阻挡层; 形成在所述第二扩散阻挡层上的第三扩散阻挡层和所述镶嵌图案的表面; 以及形成在第三扩散阻挡层上以填充镶嵌图案的上金属线。

公开(公告)号：USD518667S1

公开(公告)日：2006-04-11

申请号：US29217560

申请日：2004-11-19

申请人： Sung Gu Joe ,  Seh Dong Yoo ,  Seung Ho Oh ,  Young Jin Lee

设计人： Sung Gu Joe ,  Seh Dong Yoo ,  Seung Ho Oh ,  Young Jin Lee

公开(公告)号：US20140168965A1

公开(公告)日：2014-06-19

申请号：US14236369

申请日：2011-08-16

申请人： Kyung Mi Moon ,  Young Jin Lee ,  Jung Hye Chae ,  Hyung Kun Kim

发明人： Kyung Mi Moon ,  Young Jin Lee ,  Jung Hye Chae ,  Hyung Kun Kim

IPC分类号： F21K99/00

CPC分类号： F21V23/0442 ,  H05B33/0857

摘要： An LED device according to an embodiment of the present invention may include a first LED light source unit including at least one first white LED and emitting white light of a first color temperature; a second LED light source unit including at least one second white LED and emitting white light of a second color temperature different from the first color temperature; and a variable resistor connected to at least one of the first LED light source unit and the second LED light source unit, being configured to control a current supplied to the at least one of the first LED light source unit and the second LED light source unit.

摘要翻译： 根据本发明的实施例的LED装置可以包括：第一LED光源单元，其包括至少一个第一白色LED和发射第一色温的白光; 第二LED光源单元，其包括至少一个第二白色LED并发射与第一色温不同的第二色温的白光; 以及连接到第一LED光源单元和第二LED光源单元中的至少一个的可变电阻器，被配置为控制提供给第一LED光源单元和第二LED光源单元中的至少一个的电流 。

公开(公告)号：US08754578B2

公开(公告)日：2014-06-17

申请号：US13482781

申请日：2012-05-29

申请人： Grigory Onushkin ,  Gil Han Park ,  Jung Ja Yang ,  Young Jin Lee

发明人： Grigory Onushkin ,  Gil Han Park ,  Jung Ja Yang ,  Young Jin Lee

IPC分类号： H05B33/02 ,  H01L27/15

CPC分类号： H01L27/156 ,  F21K9/00 ,  H01L33/62 ,  H01L2224/49107 ,  H05B33/0821 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.

摘要翻译： 交流（AC）驱动的发光器件包括基板，K个在衬底的顶表面上排列成一排的第一发光二极管（LED）单元，其中K是满足K≥3的整数，K数 在所述基板的上表面上与所述第一LED单元的行平行配置的第二LED单元，以及在所述第一和第二LED单元的各行之间排列成行的第（K-1）个第三LED单元， 在基板的顶表面上。 交流驱动发光器件具有可在AC工作的LED电池之间的连接结构。

公开(公告)号：US08736181B2

公开(公告)日：2014-05-27

申请号：US13215619

申请日：2011-08-23

申请人： Young Jin Lee ,  Hyung Kun Kim ,  Kyung Mi Moon

发明人： Young Jin Lee ,  Hyung Kun Kim ,  Kyung Mi Moon

IPC分类号： H05B37/02

CPC分类号： H05B33/0821 ,  H05B33/0806

摘要： There is provided an alternating current (AC) driven light emitting device including a plurality of LED arrays connected in series, each having a structure in which a plurality of LEDs are electrically connected to form a two-terminal circuit and emit light by a bidirectional voltage when an AC voltage is applied to the two-terminal circuit; and a switching device connected to at least one of the plurality of LED arrays and controlling a total driving voltage with respect to the plurality of LED arrays. The AC driven light emitting device permits operation from a low driving voltage Vf while having a high driving voltage at a high voltage Vf, thereby achieving excellence in terms of power factor, THD, and energy efficiency.

摘要翻译： 提供了一种包括串联连接的多个LED阵列的交流（AC）驱动的发光器件，每个LED阵列具有多个LED电连接以形成两端电路并通过双向电压发光的结构 当对两端电路施加交流电压时; 以及连接到所述多个LED阵列中的至少一个并且控制相对于所述多个LED阵列的总驱动电压的开关装置。 交流驱动发光器件允许从低驱动电压Vf进行操作，同时具有高电压Vf的高驱动电压，从而在功率因数，THD和能量效率方面实现卓越。

公开(公告)号：US08633643B2

公开(公告)日：2014-01-21

申请号：US12956812

申请日：2010-11-30

申请人： Young Jin Lee ,  Hyung Kun Kim

发明人： Young Jin Lee ,  Hyung Kun Kim

IPC分类号： H01J1/62 ,  F21V1/00 ,  H01L21/00 ,  H01L33/00

CPC分类号： H01L33/647 ,  F21S41/147 ,  F21V29/677 ,  F21V29/89 ,  H01L2224/13 ,  H05K1/056 ,  H05K2201/09054 ,  H05K2201/10106 ,  H05K2201/10174 ,  H05K2201/10969

摘要： Disclosed are an LED package, an LED package module having the same and a manufacturing method thereof, and a head lamp module having the same and a control method thereof. The light emitting diode package includes: a package substrate; a light emitting diode chip mounted on one surface of the package substrate; an electrode pad formed on the other surface of the package substrate and electrically connected to the light emitting diode chip; and a heat radiation pad formed on the other surface of the package substrate and electrically insulated from the electrode pad.

摘要翻译： 公开了一种LED封装，具有该LED封装的LED封装模块及其制造方法以及具有该LED封装模块及其控制方法的头灯模块。 发光二极管封装包括：封装衬底; 安装在所述封装基板的一个表面上的发光二极管芯片; 电极焊盘，形成在所述封装基板的另一个表面上并电连接到所述发光二极管芯片; 以及形成在所述封装基板的另一表面上并与所述电极焊盘电绝缘的散热焊盘。

公开(公告)号：US08519539B2

公开(公告)日：2013-08-27

申请号：US13238570

申请日：2011-09-21

申请人： Dong Ha Jung ,  Baek Mann Kim ,  Soo Hyun Kim ,  Young Jin Lee ,  Sun Woo Hwang ,  Jeong Tae Kim

发明人： Dong Ha Jung ,  Baek Mann Kim ,  Soo Hyun Kim ,  Young Jin Lee ,  Sun Woo Hwang ,  Jeong Tae Kim

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76879 ,  H01L21/76831 ,  H01L21/76856 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2 layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.

摘要翻译： 半导体器件的金属布线包括半导体衬底; 绝缘层，设置有形成在所述半导体衬底上的镶嵌图案; 包含在镶嵌图案的表面上形成的RuO 2层的扩散阻挡层和形成在该镶嵌图案的两侧上部的RuO 2层的一部分上的Al沉积抑制层; 以及通过MOCVD法在扩散阻挡层上形成的包括Al的布线金属层，以填充镶嵌图案。

公开(公告)号：US08338951B2

公开(公告)日：2012-12-25

申请号：US13152665

申请日：2011-06-03

申请人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

发明人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.

摘要翻译： 半导体器件中的金属线包括形成在半导体衬底上的绝缘层。 在绝缘层中形成金属线形成区域。 形成金属线以填充绝缘层的金属线形成区域。 并且在金属线和绝缘层之间形成包括非晶态TaBN层的扩散阻挡层。 无定形TaBN层防止铜成分扩散到半导体衬底中，从而改善器件的特性和可靠性。

公开(公告)号：US08278671B2

公开(公告)日：2012-10-02

申请号：US13404924

申请日：2012-02-24

申请人： Suk Ho Jung ,  Hyung Kun Kim ,  Hak Hwan Kim ,  Young Jin Lee ,  Ho Sun Paek

发明人： Suk Ho Jung ,  Hyung Kun Kim ,  Hak Hwan Kim ,  Young Jin Lee ,  Ho Sun Paek

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L33/486 ,  H01L33/504 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48235 ,  H01L2924/00014

摘要： An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion.

摘要翻译： 根据本发明的一个方面的LED封装模块可以包括：其上具有预定电极的基板; 安装在基板上的多个LED芯片，以预定间隔彼此分开，并与电极电连接; 围绕所述多个LED芯片中的至少一个模制的第一颜色树脂部分; 围绕除了第一着色树脂部分成型的LED芯片之外的所有LED芯片的第二颜色树脂部分模制，并且具有与第一着色树脂部分不同的颜色; 以及第三颜色树脂部分，其包围第一着色树脂部分和第二颜色树脂部分，并且具有与第一着色树脂部分和第二着色树脂部分不同的颜色。