公开(公告)号：US07371671B2

公开(公告)日：2008-05-13

申请号：US11050312

申请日：2005-02-03

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

IPC: H01L21/3205 ,  H01L21/4763

CPC classification number: H01L21/76802 ,  H01L21/31144

Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

Abstract translation: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层，并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后，第二层用于修改基板以产生半导体器件的至少一部分。

公开(公告)号：US07356380B2

公开(公告)日：2008-04-08

申请号：US11027412

申请日：2004-12-30

Applicant: Shing-Sheng Yu ,  Chih-Ming Ke ,  Burn Jeng Lin

Inventor： Shing-Sheng Yu ,  Chih-Ming Ke ,  Burn Jeng Lin

IPC: G06F19/00

CPC classification number: G05D23/24 ,  G05D23/1934

Abstract: A methodology for doing process control by using a heating apparatus comprising heating zones is revealed. First, a target CD (critical dimension) map is assigned. A baseline CD map corresponding to a substrate processed with the heating apparatus at a baseline setting is also obtained. An original CD map corresponding to a substrate processed at an original setting is obtained. For each heating zone, a perturbed CD map corresponding to a substrate processed at a perturbed setting is also obtained. The temperature distribution of the heating apparatus is adjusted according to the error CD map defined by the baseline CD map and the target CD map, basis functions defined by the original CD map and perturbed CD maps, and expansion coefficients expanding the error CD map with basis functions.

Abstract translation: 揭示了通过使用包括加热区域的加热装置进行过程控制的方法。 首先，分配目标CD（关键尺寸）图。 还获得了对应于在加热装置处理的基板在基线设置处的基线CD图。 获得与以原始设置处理的基板对应的原始CD图。 对于每个加热区域，也获得对应于在扰动设置处理的基板的扰动的CD图。 根据由基准CD映射和目标CD映射定义的误差CD映射，由原始CD映射和扰动CD映射定义的基函数以及扩展系数扩展错误CD映射的基础来调节加热设备的温度分布 功能。

公开(公告)号：US20060187440A1

公开(公告)日：2006-08-24

申请号：US11412555

申请日：2006-04-27

Applicant: Burn Jeng Lin

Inventor： Burn Jeng Lin

IPC: G03B27/62

CPC classification number: G03F1/62 ,  G03F7/70866 ,  G03F7/70975 ,  G03F7/70983 ,  G03F7/70991

Abstract: An apparatus for mounting at least one hard pellicle to a mask which includes an enclosure having an interior cavity, demounting means for removing a protective cover from a mask, mounting means for mounting at least one hard pellicle to the mask and conduit means for pumping a light-transmitting gas into the interior cavity between the hard pellicle and the mask.

Abstract translation: 一种用于将至少一个硬膜安装到掩模上的装置，其包括具有内腔的外壳，用于从掩模移除保护盖的拆卸装置，用于将至少一个硬膜安装到所述掩模的安装装置和用于泵送 透光气体进入硬膜和面罩之间的内腔。

公开(公告)号：US5715064A

公开(公告)日：1998-02-03

申请号：US261630

申请日：1994-06-17

Applicant: Burn Jeng Lin

Inventor： Burn Jeng Lin

IPC: G03F7/20 ,  H01L21/027 ,  G01B11/00

CPC classification number: G03F9/7011 ,  G03F7/70716 ,  G03F7/70733

Abstract: A multi-station Step and Repeat Apparatus (Stepper) for imaging semiconductor wafers. The stepper has at least 2 stations, at least one of which is for imaging. The second station may be used for image field characterization, or image defect correction, or for Phase Shift Mask (PSM) loop cutting. Multiple laser beams directed in orthogonal directions provide interferometric monitoring to track wafer locations for wafers on the stepper.

Abstract translation: 用于对半导体晶片进行成像的多工位步进和重复装置（步进）。 步进电机至少有2个电台，其中至少有一个用于成像。 第二站可用于图像场表征或图像缺陷校正，或用于相移掩模（PSM）循环切割。 在正交方向上引导的多个激光束提供干涉测量以跟踪步进器上的晶片的晶片位置。

公开(公告)号：US3971887A

公开(公告)日：1976-07-27

申请号：US575908

申请日：1975-05-09

Applicant: Burn Jeng Lin ,  Yeong Show Lin

Inventor： Burn Jeng Lin ,  Yeong Show Lin

IPC: G11C11/14 ,  G02F1/09 ,  G03H1/04 ,  G09F9/30 ,  G09G3/00 ,  G09G3/02 ,  G09G3/34 ,  G11C13/04 ,  G11C13/06 ,  H04N5/66

CPC classification number: G09G3/34 ,  G02F1/09 ,  G11C13/043

Abstract: A dynamic pattern display and optical data processing system is provided including magnetic bubble devices which may be operated in real-time to produce a multi-tone (gray scale) two dimensional pattern. The display pattern is obtained by directing a light beam, which in certain applications may be linearly polarized, through a plurality of two-dimensional magnetic bubble arrays combined in a stack arrangement. Each magnetic bubble array constitutes a layer which differs in thickness from the other magnetic bubble layers. Each magnetic bubble array is also electronically driven by its own bubble propagating circuit which produces, in most embodiments, a different "local transmissivity" which is determined by whether a bubble or an empty space is propagated to the location. The degree of transmitted intensity is an exponential function of the number of magnetic bubble layers, thus n layers provides 2.sup.n steps of transmitted intensity and a four layer structure provides a sixteen tone gray scale display. The electronic portion of the structure may be driven by signals representing mathematical expressions, patterns, manual inputs and the like to generate holograms, holographic complex filters, three-dimensional television pictures, spatial intensity filters, or ordinary two-dimensional multi-tone television pictures.

Abstract translation: 提供动态图案显示和光学数据处理系统，其包括可以实时操作以产生多色调（灰度）二维图案的磁性气泡装置。 显示图案是通过在堆叠布置中组合的多个二维磁性气泡阵列来引导在某些应用中可以是线偏振的光束而获得的。 每个磁气泡阵列构成厚度与其它磁性气泡层不同的层。 每个磁性气泡阵列也由其自身的气泡传播电路进行电子驱动，在大多数实施例中，其产生不同的“局部透射率”，其由气泡或空白空间传播到该位置来确定。 透射强度的程度是磁泡层数量的指数函数，因此n层提供了传输强度的2n个步长，而四层结构提供了十六色灰度显示。 结构的电子部分可以由表示数学表达式，图案，手动输入等的信号驱动，以产生全息图，全息复合滤波器，三维电视图像，空间强度滤波器或普通的二维多色调电视图像 。

公开(公告)号：US08987689B2

公开(公告)日：2015-03-24

申请号：US13484524

申请日：2012-05-31

Applicant: Cheng-Hung Chen ,  Shih-Chi Wang ,  Jeng-Horng Chen ,  Burn Jeng Lin

Inventor： Cheng-Hung Chen ,  Shih-Chi Wang ,  Jeng-Horng Chen ,  Burn Jeng Lin

IPC: A61N5/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31761

Abstract: The present disclosure provides a method of increasing the wafer throughput by an electron beam lithography system. The method includes scanning a wafer using the maximum scan slit width (MSSW) of the electron beam writer. By constraining the integrated circuit (IC) field size to allow the MSSW to cover a complete field, the MSSW is applied to decrease the scan lanes of a wafer and thereby increase the throughput. When scanning the wafer with the MSSW, the next scan lane data can be rearranged and loaded into a memory buffer. Thus, once one scan lane is finished, the next scan lane data in the memory buffer is read for scanning.

Abstract translation: 本公开提供了一种通过电子束光刻系统增加晶片通过量的方法。 该方法包括使用电子束写入器的最大扫描狭缝宽度（MSSW）扫描晶片。 通过限制集成电路（IC）场尺寸以允许MSSW覆盖整个场，MSSW被应用于减小晶片的扫描通道，从而增加吞吐量。 当用MSSW扫描晶片时，可以将下一个扫描通道数据重新排列并加载到存储器缓冲器中。 因此，一旦一个扫描通道完成，读取存储器缓冲器中的下一个扫描通道数据进行扫描。

公开(公告)号：US08956806B2

公开(公告)日：2015-02-17

申请号：US12562761

申请日：2009-09-18

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11

Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer.

Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分。

公开(公告)号：US08762899B2

公开(公告)日：2014-06-24

申请号：US13743087

申请日：2013-01-16

Applicant: Burn Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Wen-Chun Huang

Inventor： Burn Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Wen-Chun Huang

IPC: G06F17/50

CPC classification number: H01L22/10 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70466 ,  G06F17/5036 ,  G06F17/5072 ,  G06F17/5081 ,  H01L21/31144 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of via patterning mask assignment for a via layer using double patterning technology, the method includes determining, using a processor, if a via of the via layer intercepts an underlying or overlaying metal structure assigned to a first metal mask. If the via intercepts the metal structure assigned to the first metal mask, assigning the via to a first via mask, wherein the first via mask aligns with the first metal mask. Otherwise, assigning the via to a second via mask, wherein the second via mask aligns with a second metal mask different from the first metal mask.

Abstract translation: 一种通过使用双重图案化技术对通孔层进行图案掩模分配的方法，所述方法包括使用处理器来确定通孔层的通孔是否拦截分配给第一金属掩模的下面或重叠的金属结构。 如果通孔截取分配给第一金属掩模的金属结构，则将通孔分配给第一通孔掩模，其中第一通孔掩模与第一金属掩模对准。 否则，将通孔分配给第二通孔掩模，其中第二通孔掩模与不同于第一金属掩模的第二金属掩模对准。

公开(公告)号：US08564759B2

公开(公告)日：2013-10-22

申请号：US11697469

申请日：2007-04-06

Applicant: Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03B27/42

CPC classification number: B08B3/12 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70925

Abstract: A lithography apparatus includes an imaging lens module, a substrate table positioned underlying the imaging lens module and configured to hold a substrate, and a cleaning module adapted to clean the lithography apparatus. The cleaning module comprises one inlet and one outlet for providing a cleaning fluid to and from a portion of the lithography apparatus to be cleaned, and an ultrasonic unit configured to provide ultrasonic energy to the cleaning fluid.

Abstract translation: 光刻设备包括成像透镜模块，位于成像透镜模块下方并构造成保持基板的基板台，以及适于清洁光刻设备的清洁模块。 清洁模块包括一个入口和一个出口，用于向待清洁的光刻设备的一部分提供清洁流体;以及超声波单元，被配置为向清洁流体提供超声波能量。

公开(公告)号：US08530121B2

公开(公告)日：2013-09-10

申请号：US13368877

申请日：2012-02-08

Applicant: Wen Chuan Wang ,  Shy-Jay Lin ,  Pei-Yi Liu ,  Jaw-Jung Shin ,  Burn Jeng Lin

Inventor： Wen Chuan Wang ,  Shy-Jay Lin ,  Pei-Yi Liu ,  Jaw-Jung Shin ,  Burn Jeng Lin

IPC: G03F9/00 ,  G03G5/00

CPC classification number: G03F7/2022 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/20 ,  G03F7/704 ,  H01J37/3026 ,  H01J37/3174 ,  Y10S430/143

Abstract: A method for fabricating a semiconductor device is disclosed. An exemplary method includes receiving an integrated circuit (IC) layout design including a target pattern on a grid. The method further includes receiving a multiple-grid structure. The multiple-grid structure includes a number of exposure grid segments offset one from the other by an offset amount in a first direction. The method further includes performing a multiple-grid exposure to expose the target pattern on a substrate and thereby form a circuit feature pattern on the substrate. Performing the multiple-grid exposure includes scanning the substrate with the multiple-grid structure in a second direction such that a sub-pixel shift of the exposed target pattern occurs in the first direction, and using a delta time (Δt) such that a sub-pixel shift of the exposed target pattern occurs in the second direction.

Abstract translation: 公开了一种制造半导体器件的方法。 一种示例性方法包括接收包括网格上的目标图案的集成电路（IC）布局设计。 该方法还包括接收多网格结构。 多栅格结构包括多个曝光网格段，其在第一方向上彼此偏移一个偏移量。 该方法还包括执行多栅格曝光以将衬底上的目标图案曝光，从而在衬底上形成电路特征图案。 执行多栅格曝光包括在第二方向上以多栅格结构扫描衬底，使得暴露的目标图案的子像素偏移在第一方向上发生，并且使用增量时间（Deltat）使得子像素 曝光的目标图案的像素位移在第二方向发生。