公开(公告)号：US07268575B1

公开(公告)日：2007-09-11

申请号：US11278827

申请日：2006-04-06

申请人： Chia-Lin Chen ,  Ming-Chen Chen

发明人： Chia-Lin Chen ,  Ming-Chen Chen

IPC分类号： G01R31/26

CPC分类号： G01R31/2642 ,  G01R31/2858 ,  G01R31/3008

摘要： A method includes measuring a gate leakage current of at least one transistor. A single stress bias voltage is applied to the at least one transistor at a given temperature for a stress period t. The stress bias voltage causes a 10% degradation in a drive current of the transistor at the given temperature within the stress period t. A negative bias temperature instability (NBTI) lifetime τ of the transistor is estimated based on the measured gate leakage current and a relationship between drive current degradation and time observed during the applying step.

摘要翻译： 一种方法包括测量至少一个晶体管的栅极漏电流。 在给定温度下，对于至少一个晶体管施加单个应力偏置电压以施加应力周期t。 应力偏置电压在应力周期t内的给定温度下导致晶体管的驱动电流降低10％。 基于所测量的栅极泄漏电流和驱动电流劣化与施加步骤期间观察到的时间之间的关系来估计晶体管的负偏置温度不稳定性（NBTI）寿命ττ。

公开(公告)号：US20070181951A1

公开(公告)日：2007-08-09

申请号：US11349804

申请日：2006-02-08

申请人： Chia-Lin Chen ,  Min-Jan Chen ,  Jau-Jey Wang

发明人： Chia-Lin Chen ,  Min-Jan Chen ,  Jau-Jey Wang

IPC分类号： H01L29/76 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

摘要： A PMOS device less affected by negative bias time instability (NBTI) and a method for forming the same are provided. The PMOS device includes a barrier layer over at least a portion of a gate structure, a gate spacer, and source/drain regions of a PMOS device. A stressed layer is then formed over the barrier layer. The barrier layer is preferably an oxide layer and is preferably not formed for NMOS devices.

摘要翻译： 提供了较少受负偏压时间不稳定性（NBTI）影响的PMOS器件及其形成方法。 PMOS器件在PMOS器件的栅极结构，栅极间隔物和源极/漏极区域的至少一部分上包括阻挡层。 然后在阻挡层上形成应力层。 阻挡层优选为氧化物层，优选不为NMOS器件形成。

公开(公告)号：US20170190031A1

公开(公告)日：2017-07-06

申请号：US15356634

申请日：2016-11-20

申请人： Chia-Lin Chen

发明人： Chia-Lin Chen

IPC分类号： B25B23/12 ,  B25B23/00 ,  B25B13/06

CPC分类号： B25B23/12 ,  B25B13/06 ,  B25B23/0057

摘要： A magnetic socket contains: a body and at least one magnetic attraction element. The body includes a connection segment and a fitting section, the connection segment has a polygonal coupling orifice defined therein and configured to accommodate a socket wrench, and the fitting section has a locking orifice formed therein and configured to lock a screw or a nut made of metal, wherein the locking orifice is polygonal. The body further includes at least one through orifice arranged on the fitting section and communicating with the locking orifice, and each of the at least one magnetic attraction element is housed in each of the at least one through orifice. Thereby, the magnetic socket is driven by the socket wrench so as to rotatably lock or remove a screw or a nut, and the magnetic socket magnetically attracts the screw or the nut, after removing the screw or the nut.

公开(公告)号：US08106461B2

公开(公告)日：2012-01-31

申请号：US12887615

申请日：2010-09-22

申请人： Chia-Lin Chen ,  Yi-Miaw Lin ,  Ming-Chen Chen

发明人： Chia-Lin Chen ,  Yi-Miaw Lin ,  Ming-Chen Chen

IPC分类号： H01L29/40

CPC分类号： G01R31/2642 ,  G01R31/2858 ,  G01R31/3008

摘要： An apparatus comprises a circuit for measuring a gate leakage current of a plurality of transistors. A circuit is provided to apply heat to gates of the plurality of transistors. A circuit is provided to apply a single stress bias voltage to the plurality of transistors for a stress period t. The stress bias voltage is sufficient to cause a 10% degradation in a drive current of the transistor within the stress period t. A processor is provided for estimating a negative bias temperature instability (NBTI) lifetime τ of the transistor based on a relationship between the gate leakage current and one or more of the group consisting of gate voltage, gate length, gate temperature, and gate width of the plurality of transistors. The relationship is determined from data observed while applying the single stress bias voltage.

摘要翻译： 一种装置包括用于测量多个晶体管的栅极漏电流的电路。 提供电路以向多个晶体管的栅极施加热量。 提供电路以在单个应力偏置电压施加到多个晶体管的应力周期t。 应力偏置电压足以在应力周期t内导致晶体管的驱动电流10％的降低。 提供一种处理器，用于基于栅极泄漏电流与栅极电压，栅极长度，栅极温度和栅极宽度之间的一个或多个的关系来估计晶体管的负偏置温度不稳定性（NBTI）寿命τ 多个晶体管。 该关系是从应用单个应力偏置电压时观察到的数据确定的。

公开(公告)号：USD960573S1

公开(公告)日：2022-08-16

申请号：US29737818

申请日：2020-06-11

申请人： Chia-Lin Chen

设计人： Chia-Lin Chen

公开(公告)号：US09406825B2

公开(公告)日：2016-08-02

申请号：US14720188

申请日：2015-05-22

申请人： Chia-Lin Chen

发明人： Chia-Lin Chen

IPC分类号： H01L31/00 ,  H01L31/043 ,  H01L31/0445 ,  H01L31/054

CPC分类号： H01L31/0543 ,  H02S40/22 ,  Y02E10/52

摘要： A stacked and integrated electric power generating device for capturing multiple light sources for power generation has a first concentrating photovoltaic module and a second concentrating photovoltaic module. The first concentrating photovoltaic module 10 has a transparent solar concentrating panel and a thin film solar cell. The second concentrating photovoltaic module is positioned below the first concentrating photovoltaic module with an interval, such that the first and second concentrating photovoltaic modules are in the form of a stacked and integrated structure, and the second concentrating photovoltaic module can absorb the light concentrated by the transparent solar concentrating panel to generate electric power.

摘要翻译： 用于捕获用于发电的多个光源的堆叠和集成的发电装置具有第一集中光伏模块和第二集中光伏模块。 第一聚光光伏模块10具有透明太阳能集中板和薄膜太阳能电池。 第二集中光伏模块以一定的间隔位于第一聚光光伏模块的下方，使得第一和第二集中光伏模块呈堆叠且一体化的结构，第二聚光光伏模块可以吸收由 透明的太阳能集中板产生电力。

公开(公告)号：US08889507B2

公开(公告)日：2014-11-18

申请号：US11765971

申请日：2007-06-20

申请人： Chih-Ta Wu ,  Jason Lee ,  Chung Chien Wang ,  Hsing-Lien Lin ,  Yu-Jen Wang ,  Yeur-Luen Tu ,  Chern-Yow Hsu ,  Yuan-Hung Liu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai ,  Lucy Chang ,  Chia-Lin Chen ,  Ming-Chih Tsai

发明人： Chih-Ta Wu ,  Jason Lee ,  Chung Chien Wang ,  Hsing-Lien Lin ,  Yu-Jen Wang ,  Yeur-Luen Tu ,  Chern-Yow Hsu ,  Yuan-Hung Liu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai ,  Lucy Chang ,  Chia-Lin Chen ,  Ming-Chih Tsai

IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L49/02 ,  H01L27/108

CPC分类号： H01L27/10814 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/75

摘要： A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.

摘要翻译： 提供电容器及其形成方法。 该方法包括形成底部电极; 在含氧环境中处理底部电极以将底部电极的顶层转化为缓冲层; 在缓冲层上形成绝缘层; 并在所述绝缘层上形成顶部电极。

公开(公告)号：US20080236218A1

公开(公告)日：2008-10-02

申请号：US11694080

申请日：2007-03-30

申请人： Chia-Lin Chen

发明人： Chia-Lin Chen

IPC分类号： B60R25/02

CPC分类号： B60R25/0225 ,  Y10T70/5765

摘要： A steering wheel locking device includes a lock rod, a lock base, a locking device and a fixing unit. The lock rod has a chamber, two pairs of first holes longitudinally aligned, a lock hole and a saddle. The lock base comprises a lock core to be inserted into the lock base through the lock hole. The top of the lock core is provided with a latch. The locking device has a pair of second holes in register with the pairs of first holes of the lock rod, and is engageable with the latch and moveable transversely along the lock rod between a locked position and an unlocked position. The fixing unit comprises a pair of fixing rods in register with the pairs of first holes of the lock rod and the pair of second holes of the locking device. The fixing rods are moveable longitudinally through the pairs of first holes and the pair of second holes to lock or unlock the locking device.

摘要翻译： 方向盘锁定装置包括锁定杆，锁定基座，锁定装置和固定单元。 锁杆具有一个腔室，两对纵向排列的第一孔，一个锁孔和一个鞍座。 锁定基座包括通过锁定孔插入到锁定基座中的锁芯。 锁芯的顶部设有闩锁。 锁定装置具有与锁定杆的成对的第一孔对准的一对第二孔，并且能够与闩锁接合并且可在锁定位置和解锁位置之间沿着锁定杆横向移动。 定影单元包括一对与锁定杆的成对的第一孔对准的固定杆和锁定装置的一对第二孔。 固定杆可纵向移动穿过成对的第一孔和一对第二孔，以锁定或解锁锁定装置。