Abstract:
A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.
Abstract:
This invention in one aspect relates to a pixel structure. In one embodiment, the pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode having a first portion and a second portion extending from the first portion, and formed over the scan line, the data line and the switch, where the first portion is overlapped with the switch and the second portion is overlapped with the data line, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode in the pixel area, where the first portion is overlapped with the first portion of the shielding electrode so as to define a storage capacitor therebetween and the second portion has no overlapping with the second portion of the shielding electrode.
Abstract:
An array substrate and method for manufacturing the same is provided, wherein a data line is composed of first and second segments connected by a contact pad. First and second insulation layers are disposed between the first segment of the data line and a shielding electrode. In addition, the first insulation layer is disposed between the second segment of the data line and a gate line in their overlapping area. Accordingly, the coupling effect between the conductive layers can be reduced. For example, the RC delay problem due to parasitic capacitance between the shielding electrode and the data line is solved. As a result of the design of the two insulator layers between the first segment of the data line and the shielding electrode, the shorting between the conductive layers can also be simultaneously solved and the product yield can be increased.
Abstract:
An active matrix array structure, disposed on a substrate, includes a first patterned conductive layer, a patterned gate insulating layer, a patterned semiconductor layer, a second patterned conductive layer, a patterned overcoat layer and a transparent conductive layer. The patterned gate insulating layer has first openings that expose a part of the first patterned conductive layer. The patterned semiconductor layer is disposed on the patterned gate insulating layer. The second patterned conductive layer is disposed on the patterned semiconductor layer. The patterned overcoat layer has second openings that expose a part of the first patterned conductive layer and a part of the second patterned conductive layer. The transparent conductive layer is completely disposed on the substrate. The transparent conductive layer disposed in the first openings and the second openings is broken off at a position that is in between the substrate and the patterned overcoat layer.
Abstract:
A pixel structure of a display panel is provided. The pixel structure includes a first storage capacitor formed by a pixel electrode and a common electrode pattern, and a second storage capacitor formed by an electrode pattern and the common electrode pattern. Accordingly, the storage capacitance is greatly improved without sacrificing the aperture ratio, or the aperture ratio is improved by reducing the area of the storage capacitor while the storage capacitance is maintained.
Abstract:
A pixel structure of a display panel is provided. The pixel structure includes a first storage capacitor formed by a pixel electrode and a common electrode pattern, and a second storage capacitor formed by an electrode pattern and the common electrode pattern. Accordingly, the storage capacitance is greatly improved without sacrificing the aperture ratio, or the aperture ratio is improved by reducing the area of the storage capacitor while the storage capacitance is maintained.
Abstract:
A pixel structure is provided. The pixel structure comprises a lower substrate with a transistor and pixel area; a first patterned conductive layer, which has a data line and a gate within the transistor area that is disposed on the lower substrate; a patterned insulator layer covering the first patterned conductive layer; an active layer disposed on the patterned insulator layer above the gate; a second patterned conductive layer with a gate line disposed on the patterned insulator layer, source and drain, wherein the source and the drain are disposed on the active layer; a pixel electrode disposed on the patterned insulator layer and electrically connected to the drain; a patterned passivation layer disposed on the patterned insulator layer, gate line, source, drain and pixel electrode; and a third patterned conductive layer, which has a data line connecting electrode, a gate line connecting electrode, at least one alignment electrode and a common electrode. The data line is electrically connected to the source through the data line connecting electrode; the gate line is electrically connected to the gate through the gate line connecting electrode; the alignment electrode is electrically connected to the pixel electrode; and a portion of the common electrode is disposed above the data line.
Abstract:
A pixel structure is disclosed. The pixel structure includes a substrate, a first data line having at least one end formed on the substrate, a first insulation layer overlying the first data line and exposing a part of the end of the first data line, a shielding electrode disposed on the first insulation layer and overlapped with the first data line, a second data line formed on the first insulation layer and electrically connected to the exposed end of the first data line, a second insulation layer overlying the shielding electrode and the second data line, and a pixel electrode formed on the second insulation layer and overlapped with the shielding electrode. The invention also provides a method for fabricating the pixel structure.
Abstract:
A liquid crystal display includes: a substrate; a plurality of pixel electrodes formed on the substrate and arranged corresponding to a pixel array; a first data line and a second data line formed on the substrate; a plurality of scan lines formed on the substrate, in which the scan lines cross the first data line and the second data line; a first branch electrode electrically connects a pixel electrode and partially overlaps the first data line; and a second branch electrode electrically connects the pixel electrode and partially overlaps the second data line, in which the first branch electrode and the second branch electrode are disposed opposite to the pixel electrode.
Abstract:
A pixel structure of a liquid crystal display (LCD) includes a scan line, a data line and a thin film transistor (TFT) disposed on the substrate. The TFT has a source electrically connected to the date line and a gate electrically connected to the scan line. A shielding electrode disposes on the substrate, wherein the same metal layer makes the shielding electrode, the source and the drain. Furthermore, the data line makes at least two different patterned metal, layers which are not formed simultaneously and the patterned metal layers are electrically connected to each other. A pixel electrode covers the part of the shielding electrode and electrically connects to the drain.