摘要:
A memory module configured to connect to a slot of a data processing system. A set of tabs is connected to the module and configured to electrically connect the module to the slot and to electrically connect the module to a clock of the data processing system. The set of tabs includes a first tab, a second tab, a third tab, and a fourth tab. The first tab and the second tab are opposite the third tab and the fourth tab. The first tab comprises a positive type tab, the second tab comprises a negative type tab, the third tab comprises a positive type tab, and the fourth tab comprises a negative type tab. The first and third tabs are configured to provide a first electrical connection to the clock. The second and fourth tabs are configured to provide a second electrical connection to the clock. Together, the first, second, third, and fourth tabs comprise two dual tabs.
摘要:
A memory device including a memory array storing data, a variable delay controller, a passive variable delay circuit and an output driver. The variable delay controller periodically receives delay commands from a first source external to the memory device during operation of the memory device, and outputs delay instruction bits responsive to the received delay commands. The passive variable delay circuit receives a clock from a second source external to the memory device, receives the delay instruction bits from the variable delay controller, generates a delayed clock having a time relation to the received clock as determined by the delay instruction bits, and outputting the delayed clock. The output driver receives the data from the memory array and the delayed clock, and outputs the data at a time responsive to the delayed clock.
摘要:
A variable input voltage regulator includes a first circuit configured to convert a first voltage from a first voltage source to a first current, and a second circuit electrically coupled to the first circuit and configured to mirror the first current to a voltage output node. The variable input voltage regulator further includes a third circuit electrically coupled to the voltage output node of the second circuit and configured to supply additional current to the voltage output node from a second voltage of a second voltage source in response to a control input.
摘要:
Memory systems are disclosed that include a memory controller; an outbound link, the memory controller connected to the outbound link, the outbound link comprising a number of conductive pathways that conduct memory signals from the memory controller to memory buffer devices in a first memory layer; and at least two memory buffer devices in a first memory layer, each memory buffer device in the first memory layer connected to the outbound link to receive memory signals from the memory controller.
摘要:
Embodiments of the invention are directed to a single driver that can be used to transmit data with configurable levels of pre-emphasis, and can have either a constant or adjustable driver output impendence, selectively. One embodiment, directed to a driver apparatus, is associated with a digital communication channel for transmitting data signals, wherein at least one of the signals includes a higher frequency component. The apparatus comprises a first sub-driver that has a constant output impedance, and is selectively configurable to implement two or more different levels of pre-emphasis. The apparatus further comprises one or more second sub-drivers. A set of connector elements are provided for connecting the first sub-driver and each of the second sub-drivers in parallel relationship with one another, so that the first sub-driver and each of the second sub-drivers all have inputs that respectively receive a specified driver apparatus input signal, and all have outputs that are connected together to selectively provide a specified driver apparatus output impedance. The apparatus further includes a device that is connected to selectively disable and enable each of the second sub-drivers.
摘要:
A memory interface device, system, method, and design structure for controlling for variable impedance and voltage in a memory system are provided. The memory interface device includes a calibration cell configurable to adjust an output impedance relative to an external reference resistor, and driver circuitry including multiple positive drive circuits and multiple negative drive circuits coupled to a driver output in a memory system. The memory interface device further includes impedance control logic to adjust the output impedance of the calibration cell and selectively enable the positive and negative drive circuits as a function of a drive voltage and a target impedance.
摘要:
A signal history controlled slew-rate transmission method and bus interface transmitter provide an improved channel equalization mechanism having low complexity. A variable slew-rate feed-forward pre-emphasis circuit changes the slew rate of the applied pre-emphasis in conformity with the history of the transmitted signal. The pre-emphasis circuit may be implemented by a pair of current sources supplying the output of the transmitter, and having differing current values. The current sources are controlled such that upon a signal value change, a high slew rate is provided and when the signal value does not change for two consecutive signal periods, the slew rate is reduced. A current source having a controlled magnitude may be employed to provide a slew rate that changes over time and is continuously reduced until another transmission value change occurs.
摘要:
A variable input voltage regulator includes a first circuit configured to convert a first voltage from a first voltage source to a first current, and a second circuit electrically coupled to the first circuit and configured to mirror the first current to a voltage output node. The variable input voltage regulator further includes a third circuit electrically coupled to the voltage output node of the second circuit and configured to supply additional current to the voltage output node from a second voltage of a second voltage source in response to a control input.
摘要:
A memory interface device, system, method, and design structure for controlling for variable impedance and voltage in a memory system are provided. The memory interface device includes a calibration cell configurable to adjust an output impedance relative to an external reference resistor, and driver circuitry including multiple positive drive circuits and multiple negative drive circuits coupled to a driver output in a memory system. The memory interface device further includes impedance control logic to adjust the output impedance of the calibration cell and selectively enable the positive and negative drive circuits as a function of a drive voltage and a target impedance.
摘要:
A communications system that may include a transmitter, a receiver, connected over a communications network. A communication link on the communications network may transfer data between the transmitter and the receiver. The system may also include a logic unit to scramble a plurality of portions of the data at the transmitter based upon the communication link and may unscramble the plurality of portions of the data at the receiver. As a result, the logic unit may provide improved performance of the communication link and/or reduced power consumption of the communication link.