公开(公告)号：US08298943B1

公开(公告)日：2012-10-30

申请号：US13118034

申请日：2011-05-27

申请人： John Christopher Arnold ,  Sean D. Burns ,  Sivananda K. Kanakasabapathy ,  Yunpeng Yin

发明人： John Christopher Arnold ,  Sean D. Burns ,  Sivananda K. Kanakasabapathy ,  Yunpeng Yin

IPC分类号： H01L21/311 ,  H01L21/44

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897

摘要： A method for patterning self-aligned vias in a dielectric. The method includes forming a first trench partially through a hard mask, where the trench corresponds to a desired wiring path in the dielectric. The trench should be formed on a sub-lithographic scale. Form a second trench, also of a sub-lithographic scale, that intersects the first trench. The intersection forms a pattern extending through the depth of the hard mask, and corresponds to a via hole in the dielectric. The via hole is etched into the dielectric through the hard mask. The first trench is extended through the hard mask and the exposed area is etched to form the wiring path, which intersects the via hole. Conductive material is deposited to form a sub-lithographic via and wiring. This method may be used to form multiple vias of sub-lithographic proportions and with a sub-lithographic pitch.

摘要翻译： 用于在电介质中图案化自对准通孔的方法。 该方法包括通过硬掩模部分地形成第一沟槽，其中沟槽对应于电介质中期望的布线路径。 沟槽应该在亚光刻尺上形成。 形成与第一沟槽相交的第二沟槽，也是亚光刻标尺。 交叉点形成延伸穿过硬掩模的深度的图案，并且对应于电介质中的通孔。 通孔通过硬掩模蚀刻到电介质中。 第一沟槽延伸穿过硬掩模，并且暴露区域被蚀刻以形成与通孔相交的布线路径。 导电材料沉积以形成亚光刻通孔和布线。 该方法可以用于形成亚光刻比例的多个通孔和亚光刻间距。

公开(公告)号：US08293454B2

公开(公告)日：2012-10-23

申请号：US12199253

申请日：2008-11-18

申请人： Marie Angelopoulos ,  Katherina E. Babich ,  Sean D. Burns ,  Allen H. Gabor ,  Scott D. Halle ,  Arpan P. Mahorowala ,  Dirk Pfeiffer

发明人： Marie Angelopoulos ,  Katherina E. Babich ,  Sean D. Burns ,  Allen H. Gabor ,  Scott D. Halle ,  Arpan P. Mahorowala ,  Dirk Pfeiffer

IPC分类号： B32B9/04 ,  G03F7/075

CPC分类号： G03F7/091 ,  G03F7/0757 ,  Y10T428/24942 ,  Y10T428/31663

摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.

摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。

公开(公告)号：US07994060B2

公开(公告)日：2011-08-09

申请号：US12551801

申请日：2009-09-01

申请人： Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes

发明人： Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes

IPC分类号： H01L21/311 ,  H01L21/469

CPC分类号： H01L21/31144 ,  G03F7/0035 ,  H01L21/0271 ,  H01L21/0338

摘要： An integrated circuit is formed with structures spaced more closely together than a transverse dimension of such structures, such as for making contacts to electronic elements formed at minimum lithographically resolvable dimensions by dark field split pitch techniques. Acceptable overlay accuracy and process efficiency and throughput for the split pitch process that requires etching of a hard mark for each of a plurality of sequentially applied and patterned resist layers is supported by performing the etching of the hard mask entirely within a lithography track through using an acid sensitive hard mark material and an acidic overcoat which contacts areas of the hard mask through patterned apertures in the resist. The contacted areas of the hard mask are activated for development by baking of the acidic overcoat.

摘要翻译： 集成电路形成为具有比这种结构的横向尺寸更紧密地在一起的结构，例如用于通过暗场分割俯仰技术以最小可光滑分辨尺寸形成的电子元件的接触。 对于需要蚀刻多个顺序施加的和图案化的抗蚀剂层中的每一个的硬标记的分割间距处理的可接受的覆盖精度和处理效率和处理量通过使用 酸敏感的硬标记材料和通过抗蚀剂中的图案化孔接触硬掩模的区域的酸性外涂层。 通过烘烤酸性外涂层来激活硬掩模的接触区域以进行显影。

公开(公告)号：US07439302B2

公开(公告)日：2008-10-21

申请号：US11195566

申请日：2005-08-02

申请人： Wu-Song Huang ,  Sean D. Burns ,  Mahmoud Khojasteh

发明人： Wu-Song Huang ,  Sean D. Burns ,  Mahmoud Khojasteh

IPC分类号： G03F7/11 ,  C08F8/14 ,  C08F8/32

CPC分类号： G03F7/091 ,  G03F7/094 ,  Y10S438/952

摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.

摘要翻译： 公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。 底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。 本发明的聚合物的实例包括：其中每个R 1独立地选自有机部分或卤素; 每个A独立地是单键或有机部分; R 2是氢或甲基; X，Y，Z为0〜7的整数，Y + Z为7以下。 上述有机部分可以是选自直链或支链烷基，卤代直链或支链烷基，芳基，卤代芳基，环状烷基和卤代环状烷基的取代或未取代的烃及其任何组合。 该组合物适合用作多层光刻工艺中的平坦化底层，包括三层光刻工艺。

公开(公告)号：US07326523B2

公开(公告)日：2008-02-05

申请号：US11013971

申请日：2004-12-16

申请人： Wu-Song Huang ,  Sean D. Burns ,  Mahmoud Khojasteh

发明人： Wu-Song Huang ,  Sean D. Burns ,  Mahmoud Khojasteh

IPC分类号： G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03C1/835 ,  G03C1/825

CPC分类号： G03F7/091 ,  G03F7/094 ,  Y10S438/952

摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.

摘要翻译： 公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。 底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。 该组合物适合用作多层光刻工艺中的平坦化底层，包括三层光刻工艺。