公开(公告)号：US07605014B2

公开(公告)日：2009-10-20

申请号：US11498095

申请日：2006-08-03

申请人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00

CPC分类号： G11B9/1418 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16 ,  G01Q80/00

摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.

摘要翻译： 一种制造具有自对准金属屏蔽的电阻式探头的方法。 该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

公开(公告)号：US07528371B2

公开(公告)日：2009-05-05

申请号：US11448723

申请日：2006-06-08

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： G01N23/00

CPC分类号： G01Q70/16 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/02 ,  G11B9/1409 ,  Y10S977/861

摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.

摘要翻译： 提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。 半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。 掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区 并重掺杂第二杂质。 电阻尖端的高度小于电阻尖端的半径。 因此，提高了半导体探针的空间分辨率。

公开(公告)号：US20080225678A1

公开(公告)日：2008-09-18

申请号：US12128788

申请日：2008-05-29

申请人： Hyoung-soo KO ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

发明人： Hyoung-soo KO ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G11B7/00

CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

公开(公告)号：US07419843B2

公开(公告)日：2008-09-02

申请号：US11212605

申请日：2005-08-29

申请人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00

CPC分类号： G01Q70/10 ,  G01Q70/16

摘要： A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

摘要翻译： 一种制造具有电阻尖端的半导体探针的方法。 该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜，首先蚀刻硅衬底的上表面，通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜，形成 通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻，使尖端颈部的宽度达到预定宽度，并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。 可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

公开(公告)号：US20070137780A1

公开(公告)日：2007-06-21

申请号：US11595876

申请日：2006-11-13

申请人： Hong-sik Park ,  Seung-bum Hong ,  Jong-youp Shim

发明人： Hong-sik Park ,  Seung-bum Hong ,  Jong-youp Shim

IPC分类号： B32B37/00

CPC分类号： H02K41/0354 ,  B81B3/0062 ,  B81B2201/038 ,  B81B2201/11 ,  B81B2203/051 ,  B82Y10/00 ,  G11B9/1436 ,  H02K2201/18

摘要： A method of fabricating a micro actuator is provided including a media stage having a media loading surface and a coil for driving the media stage, formed on the opposite surface of the media stage to the media loading surface. The method includes forming a groove on a first surface of a first substrate, forming a coil on a first surface of a second substrate, bonding the first surface of the first substrate to the first surface of the second substrate, and forming the media loading surface on a second surface of the second substrate, which is opposite the first surface of the second substrate.

摘要翻译： 提供了一种制造微型致动器的方法，包括：介质台，其具有介质装载表面和用于驱动介质载物台的线圈，其形成在介质载台的相对表面上至介质装载表面。 该方法包括在第一基板的第一表面上形成凹槽，在第二基板的第一表面上形成线圈，将第一基板的第一表面接合到第二基板的第一表面，并且形成介质装载表面 在第二基板的与第二基板的第一表面相对的第二表面上。

公开(公告)号：US20070042522A1

公开(公告)日：2007-02-22

申请号：US11498095

申请日：2006-08-03

申请人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00

CPC分类号： G11B9/1418 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16 ,  G01Q80/00

摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.

摘要翻译： 一种制造具有自对准金属屏蔽的电阻式探头的方法。 该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

公开(公告)号：US20070040116A1

公开(公告)日：2007-02-22

申请号：US11448723

申请日：2006-06-08

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： G12B21/02

CPC分类号： G01Q70/16 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/02 ,  G11B9/1409 ,  Y10S977/861

摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.

摘要翻译： 提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。 半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。 掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区 并重掺杂第二杂质。 电阻尖端的高度小于电阻尖端的半径。 因此，提高了半导体探针的空间分辨率。

公开(公告)号：US20060060779A1

公开(公告)日：2006-03-23

申请号：US11219732

申请日：2005-09-07

申请人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

发明人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G21K7/00

CPC分类号： G11B9/1409 ,  G01Q60/30 ,  Y10S977/875 ,  Y10S977/878 ,  Y10S977/879

摘要： A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist layer orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist layer on the substrate to cover a portion of the first photoresist layer and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresist layers; and removing the first and second photoresist layers, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.

摘要翻译： 具有电阻尖端的半导体探针及其制造方法。 该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂层，并且蚀刻所述掩模层使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂层以覆盖所述第一光致抗蚀剂层的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂层覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂层，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

公开(公告)号：US08523555B2

公开(公告)日：2013-09-03

申请号：US13621204

申请日：2012-09-15

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： B29C59/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US08248906B2

公开(公告)日：2012-08-21

申请号：US11964328

申请日：2007-12-26

申请人： Seung-bum Hong ,  Sung-hoon Choa ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Yong Kwan Kim

发明人： Seung-bum Hong ,  Sung-hoon Choa ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Yong Kwan Kim

IPC分类号： G11B9/00

CPC分类号： G11B9/02

摘要： A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.

摘要翻译： 提供了一种铁电硬盘装置，包括：铁电介质，具有设置在底部电极上的底部电极和铁电体层; 以及形成在铁电介质上方的头部，头部用于在铁电层上写入和再现信息。