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    NOVEL TARC MATERIAL FOR IMMERSION WATERMARK REDUCTION
    52.
    发明申请
    NOVEL TARC MATERIAL FOR IMMERSION WATERMARK REDUCTION 有权
    新型TARC材料用于降低水分降低

    公开(公告)号：US20110262871A1

    公开(公告)日：2011-10-27

    申请号：US13177741

    申请日：2011-07-07

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F7/20

    CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

    Abstract: Various lithography methods are disclosed herein. In an example, a method includes forming a resist layer over a substrate; forming a coating material layer that includes one of an acid and a chelate compound over the resist layer; and exposing the resist layer and the coating material layer to radiation, wherein during the exposing, the one of the acid and the chelate compound in the coating material layer substantially neutralizes any quencher that diffuses into the coating material layer from the resist layer.

    Abstract translation: 本文公开了各种光刻方法。 在一个实例中，一种方法包括在衬底上形成抗蚀剂层; 在抗蚀剂层上形成包含酸和螯合物中的一种的涂料层; 以及将抗蚀剂层和涂层材料层暴露于辐射，其中在曝光期间，涂层材料层中的酸和螯合物之一基本上中和从抗蚀剂层扩散到涂层材料层中的任何猝灭剂。

    Method and Apparatus of Patterning a Semiconductor Device
    54.
    发明申请
    Method and Apparatus of Patterning a Semiconductor Device 有权
    图案化半导体器件的方法和装置

    公开(公告)号：US20110159670A1

    公开(公告)日：2011-06-30

    申请号：US12649462

    申请日：2009-12-30

    Applicant: Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

    Inventor： Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

    IPC: H01L21/265 ,  G03F7/004 ,  G03F7/027 ,  H01L21/302

    CPC classification number: G03F7/42 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/30604 ,  H01L21/31133

    Abstract: Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.

    Abstract translation: 提供一种光致抗蚀剂，其包括具有可破坏的主链的聚合物和不与聚合物结合的光酸产生剂。 此外，提供了制造半导体器件的方法。 该方法包括提供器件衬底。 材料层形成在衬底上。 在材料层上形成光致抗蚀剂材料。 光致抗蚀剂材料具有包括骨架的聚合物。 图案化光致抗蚀剂材料以形成图案化的光致抗蚀剂层。 然后对材料层进行制造工艺，其中图案化的光致抗蚀剂层在制造过程中用作掩模。 此后，以破坏聚合物主链的方式处理图案化的光刻胶层。 然后去除图案化的光致抗蚀剂层。

    PHOTORESIST AND PATTERNING PROCESS
    55.
    发明申请
    PHOTORESIST AND PATTERNING PROCESS 有权
    光电和绘图工艺

    公开(公告)号：US20110070542A1

    公开(公告)日：2011-03-24

    申请号：US12562761

    申请日：2009-09-18

    Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

    Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

    IPC: G03F7/20 ,  G03F7/004

    CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11

    Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer

    Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分

    Photolithography process and photomask structure implemented in a photolithography process
    57.
    发明授权
    Photolithography process and photomask structure implemented in a photolithography process 有权
    在光刻工艺中实现的光刻工艺和光掩模结构

    公开(公告)号：US07718348B2

    公开(公告)日：2010-05-18

    申请号：US12244857

    申请日：2008-10-03

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03C5/00

    CPC classification number: G03F7/70441 ,  G03F1/36

    Abstract: In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.

    Abstract translation: 在光刻工艺中，在基板上形成光致抗蚀剂层。 光掩模在衬底上对准以传输在衬底上的光掩模中限定的图案图像。 光掩模包括不同透光率的第一和第二图案，以及围绕第二图案的虚拟图案，其透光率低于第一图案的透光率。 将基板暴露于通过光掩模的光辐射。 然后将光致抗蚀剂层显影以形成图案图像。 虚拟图案被尺寸地构造成允许光透射，但是基本上是这样的，使得在曝光期间伪图案不被成像。

    METHOD OF FORMING A SACRIFICIAL LAYER
    58.
    发明申请
    METHOD OF FORMING A SACRIFICIAL LAYER 有权
    形成真实层的方法

    公开(公告)号：US20100093176A1

    公开(公告)日：2010-04-15

    申请号：US12536805

    申请日：2009-08-06

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/306

    CPC classification number: H01L21/32139 ,  H01L21/31111 ,  H01L21/31133

    Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a material layer on a substrate; forming a sacrificial layer on the material layer, where the material layer and sacrificial layer each as a thickness less than 100 angstrom; forming a patterned photoresist layer on the sacrificial layer; applying a first wet etching process to etch the sacrificial layer to form a patterned sacrificial layer using the patterned photoresist layer as a mask; applying a second wet etching process to etch the first material layer; and applying a third wet etching process to remove the patterned sacrificial layer.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基板上形成材料层; 在材料层上形成牺牲层，其中材料层和牺牲层各自的厚度小于100埃; 在所述牺牲层上形成图案化的光致抗蚀剂层; 施加第一湿蚀刻工艺以蚀刻牺牲层以使用图案化的光致抗蚀剂层作为掩模形成图案化的牺牲层; 施加第二湿蚀刻工艺以蚀刻第一材料层; 以及施加第三湿蚀刻工艺以去除图案化的牺牲层。

    Method of forming high etch resistant resist patterns
    59.
    发明授权
    Method of forming high etch resistant resist patterns 有权
    形成高耐腐蚀抗蚀剂图案的方法

    公开(公告)号：US07531296B2

    公开(公告)日：2009-05-12

    申请号：US11209684

    申请日：2005-08-24

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03F7/26

    CPC classification number: G03F7/40 ,  G03F7/405

    Abstract: A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.

    Abstract translation: 提供了一种在半导体衬底上形成耐蚀刻光刻胶图案的方法。 在一个实施例中，在基板上形成光致抗蚀剂层。 光致抗蚀剂层被曝光和显影以形成光致抗蚀剂图案。 在光致抗蚀剂图案上形成含聚合物的层。 光致抗蚀剂图案和含聚合物的层被热处理，使得聚合物基本上扩散到光致抗蚀剂图案中，从而增强光致抗蚀剂图案的耐蚀刻性。 然后除去含聚合物的层。

    Method for forming a lithography pattern
    60.
    发明授权
    Method for forming a lithography pattern 有权
    光刻图案的形成方法

    公开(公告)号：US07482280B2

    公开(公告)日：2009-01-27

    申请号：US11426233

    申请日：2006-06-23

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    IPC: H01L21/302 ,  G03F7/00

    CPC classification number: G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086

    Abstract: A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.

    Abstract translation: 光刻图案的方法包括在基底上形成第一材料层，第一材料层基本上不含硅，并且在第一材料层上方形成包括至少一个开口的图案化抗蚀剂层。 在图案化的抗蚀剂层上形成含有硅的第二材料层，并且使用第二材料层作为掩模在第一材料层中形成开口。

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