公开(公告)号：US06720273B1

公开(公告)日：2004-04-13

申请号：US09763138

申请日：2001-04-20

申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp ,  Thomas Beck

发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp ,  Thomas Beck

IPC分类号： H01L213065

CPC分类号： H01J37/32174 ,  C30B33/12 ,  H01J37/32082 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3085 ,  H01L21/3086

摘要： A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate (10), in particular, a patterned silicon body, with the assistance of a plasma (14), is proposed. In the process, the plasma (14) is produced by a plasma source (13) to which a high-frequency generator (17) is connected for applying a high-frequency power. Moreover, this high-frequency generator is in communication with a first means which periodically changes the high-frequency power applied to the plasma source (13). Besides, provision is preferably made for a second means which adapts the output impedance of the high-frequency generator (17) to the prevailing impedance of the plasma source (13) which changes as a function of the high-frequency power. The proposed anisotropic etching method is carried out in separate and alternating etching and polymerization steps, a higher high-frequency power of up to 5000 watts being, at least temporarily, applied to the plasma source (13) during the etching steps than during the deposition steps. The proposed device is also suitable for igniting a plasma (14) and for adjusting upward or pulsing a plasma power from a starting value to up to 5000 watts.

摘要翻译： 提出了一种借助于等离子体（14）能够进行优选地各向异性地蚀刻衬底（10）特别是图案化硅体的装置和方法。 在该过程中，等离子体（14）由连接有高频发生器（17）的等离子体源（13）产生，以施加高频电力。 此外，该高频发生器与周期性地改变施加到等离子体源（13）的高频功率的第一装置通信。 此外，优选地对于将高频发生器（17）的输出阻抗适配为等离子体源（13）的主要阻抗（其随高频功率变化而变化）的第二装置进行设置。 所提出的各向异性蚀刻方法在分离和交替的蚀刻和聚合步骤中进行，在蚀刻步骤期间至少暂时施加高达5000瓦特的高频功率至等离子体源（13）比在沉积期间更高 脚步。 所提出的装置还适用于点燃等离子体（14）并且用于将等离子体功率从起始值向上调节或脉冲至高达5000瓦特。

公开(公告)号：US06592664B1

公开(公告)日：2003-07-15

申请号：US09656546

申请日：2000-09-06

申请人： Wilhelm Frey ,  Franz Laermer ,  Klaus Heyers

发明人： Wilhelm Frey ,  Franz Laermer ,  Klaus Heyers

IPC分类号： C30B2508

CPC分类号： C30B25/105 ,  Y10T117/10

摘要： A method for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate is described. The method includes the following steps: a first amount of energy is supplied by heating at least the deposition surface; and an ionized inert gas is conducted, at least from time to time, onto the deposition surface in order to supply, at least from time to time, a second amount of energy through the effect of ions of the ionized inert gas on the deposition surface. The first amount of energy is less than the energy amount necessary for the epitaxial deposition of atoms or molecules of the reactive gas on the deposition surface. A sum of the first energy amount and the second energy equaling, at least from time to time, a total amount of energy that is sufficient for the epitaxial deposition of atoms or molecules of the reactive gas onto the deposition surface.

摘要翻译： 描述了从衬底的沉积表面上的反应性气体外延沉积原子或分子的方法。 该方法包括以下步骤：通过至少加热沉积表面来提供第一量的能量; 并且电离惰性气体至少不时地进行到沉积表面上，以便至少通过电离惰性气体的离子在沉积表面上的时间来供应第二量的能量。 第一量的能量小于沉积表面上的反应气体的原子或分子的外延沉积所需的能量。 至少不时地使第一能量和第二能量的总和等于足以将反应气体的原子或分子外延沉积到沉积表面上的能量的总量。

公开(公告)号：US06531068B2

公开(公告)日：2003-03-11

申请号：US09328019

申请日：1999-06-08

申请人： Franz Laermer ,  Andrea Schilp

发明人： Franz Laermer ,  Andrea Schilp

IPC分类号： H01L21308

CPC分类号： H01L21/3065

摘要： A method of anisotropic etching of silicon with structures, preferably defined with an etching mask, by using a plasma, with a polymer being applied during a polymerization step to the lateral border of the structures defined by the etching mask, then being partially removed again during the following etching step and being redeposited in deeper side walls of the structure newly formed due to the etching reaction, and the etching is performed with an etching gas containing 3 to 40 vol % oxygen. In this way it is possible to prevent sulfur contamination in the exhaust gas area in high rate etching of silicon.

摘要翻译： 通过使用等离子体，优选用蚀刻掩模限定的硅，在聚合步骤期间将聚合物施加到由蚀刻掩模限定的结构的侧边缘上的各向异性蚀刻硅的方法，然后再次在 以下蚀刻步骤，并且由于蚀刻反应而重新沉积在新形成的结构的更深的侧壁中，并且用含有3至40体积％氧气的蚀刻气体进行蚀刻。 以这种方式，可以在硅的高速蚀刻中防止废气区域中的硫污染。

公开(公告)号：US06462566B1

公开(公告)日：2002-10-08

申请号：US09508559

申请日：2000-08-16

申请人： Martin Schoefthaler ,  Ralf Schellin ,  Bernd Maihoefer ,  Franz Laermer ,  Markus Lutz ,  Harald Emmerich ,  Joerg Kaienburg

发明人： Martin Schoefthaler ,  Ralf Schellin ,  Bernd Maihoefer ,  Franz Laermer ,  Markus Lutz ,  Harald Emmerich ,  Joerg Kaienburg

IPC分类号： G01R31302

CPC分类号： G01R33/028 ,  G01D21/02

摘要： A sensor element, in particular for determining an angle of rotation, has a detection medium whose position varies as a function of a change in a parameter to be measured, where the change in the position of the detection medium leads to a change in an analyzable signal of the sensor element which is influenced by the detection medium. The detection medium has at least one conductor loop carrying current which is exposed to an external magnetic field; the detection medium is rotationally movably mounted so that a rotational motion of the sensor element about an angle of rotation in the plane of the magnetic field is converted into a deflection of the detection medium perpendicular to the magnetic field.

摘要翻译： 特别是用于确定旋转角度的传感器元件具有检测介质，其检测介质的位置根据要测量的参数的变化而变化，其中检测介质的位置变化导致可分析的变化 由检测介质影响的传感器元件的信号。 检测介质具有暴露于外部磁场的至少一个承载电流的导体回路; 检测介质被可旋转地移动地安装，使得传感器元件围绕磁场平面中的旋转角度的旋转运动被转换为垂直于磁场的检测介质的偏转。

公开(公告)号：US06324910B1

公开(公告)日：2001-12-04

申请号：US09284907

申请日：1999-06-22

申请人： Karsten Funk ,  Hans-Martin Kulcke ,  Franz Laermer ,  Andrea Schilp

发明人： Karsten Funk ,  Hans-Martin Kulcke ,  Franz Laermer ,  Andrea Schilp

IPC分类号： G01H1300

CPC分类号： G01P15/097 ,  G01C19/5726 ,  G01P2015/0814

摘要： A method for measuring a physical variable in which a structure is put in resonant oscillations and a change in the oscillation frequency of the structure as a result of a change in the physical variable to be measured is detected, and a frequency-analog signal is provided. A structure oscillating with a resonance frequency receives an electrostatic force.

摘要翻译： 检测结构被置于共振振荡中的物理变量的测量方法以及由待测物理变化引起的结构振荡频率的变化的方法，并提供频率模拟信号 。 以共振频率振荡的结构接收静电力。

公开(公告)号：US06303512B1

公开(公告)日：2001-10-16

申请号：US09171516

申请日：1999-04-29

申请人： Franz Laermer ,  Andrea Schilp

发明人： Franz Laermer ,  Andrea Schilp

IPC分类号： H01L213065

CPC分类号： H01L21/30655 ,  H01L21/3065

摘要： A method for anisotropic plasma etching of laterally defined patterns in a silicon substrate is described. Protective layers made of at least one silicon compound with a second reaction partner that is entirely compatible with the chemistry of the etching process are deposited before and/or during plasma etching onto the sidewalls of the laterally defined patterns.

摘要翻译： 描述了硅衬底中侧向限定图案的各向异性等离子体蚀刻的方法。 由与至少一种硅化合物制成的保护层与第二反应对象制成，其与蚀刻工艺的化学完全相容，在等离子体蚀刻之前和/或等离子体蚀刻之间沉积到横向限定图案的侧壁上。

公开(公告)号：US06259350B1

公开(公告)日：2001-07-10

申请号：US08784660

申请日：1997-01-21

申请人： Roland Mueller-Fiedler ,  Christoph Treutler ,  Michael Gundlach ,  Manfred Moellendorf ,  Steffen Schmidt ,  Franz Laermer ,  Christoph Kampshoff ,  Klaus Heyers ,  Joerg Buth

发明人： Roland Mueller-Fiedler ,  Christoph Treutler ,  Michael Gundlach ,  Manfred Moellendorf ,  Steffen Schmidt ,  Franz Laermer ,  Christoph Kampshoff ,  Klaus Heyers ,  Joerg Buth

IPC分类号： H01C304

CPC分类号： C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2111/00844 ,  G01F1/6845 ,  G01K7/18 ,  C04B41/4558 ,  C04B41/5071 ,  C04B41/5122 ,  C04B35/00

摘要： With a sensor and method, it is possible for platinum resistor elements to be used advantageously as heating elements, temperature sensors, printed circuit traces, or as chemically resistant electron beam sensitive layers. To ensure a long-lasting adhesion of the platinum resistance layer to a dielectric substrate, even during exposure to temperatures which are elevated over ambient temperature and under dry and most atmospheric conditions, a thin adhesion layer of platinum silicide, for example, is deposited between the platinum resistance layer and the dielectric substrate. Resistor elements patterned from the platinum layer can advantageously be used in temperature sensors, mass flow sensors, chemical sensors, gas sensors, or humidity sensors.

摘要翻译： 利用传感器和方法，可以将铂电阻元件有利地用作加热元件，温度传感器，印刷电路迹线或化学抗性电子束敏感层。 为了确保铂电阻层与电介质基板的长时间粘附，即使在暴露于环境温度升高的环境温度和干燥和大气环境条件下的温度下，例如，将诸如硅化钛的薄粘附层沉积在 铂电阻层和电介质基板。 从铂层图案化的电阻元件可有利地用于温度传感器，质量流量传感器，化学传感器，气体传感器或湿度传感器。

公开(公告)号：US06200822B1

公开(公告)日：2001-03-13

申请号：US09269007

申请日：1999-06-17

申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

IPC分类号： H01L2100

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01L21/30655 ,  H01L22/26

摘要： A method for detecting the transition between different materials in semiconductor structures during alternating etching and covering steps for anisotropic depthwise etching of defined patterns performed using a plasma. Provision is made for ascertaining, by way of an intensity measurement of at least one specific substance contained in the plasma, the beginning of each etching step by the fact that a characteristic threshold is reached, this also being achievable by way of an external synchronization signal which indicates the beginning and end of each etching step; for then, when the threshold value is reached, starting a delay time which is longer than the course of a first concentration maximum; for a second concentration maximum then to be ascertained after the delay time has elapsed; and for the second concentration maxima of the etching steps to be monitored as to whether they exceed or fall below the predefined value, in order to detect a material transition.

摘要翻译： 一种用于在交替蚀刻期间检测半导体结构中的不同材料之间的转变的方法以及使用等离子体进行的限定图案的各向异性深度蚀刻的覆盖步骤。 提供了通过对等离子体中包含的至少一种特定物质的强度测量来确定通过达到特征阈值的事实开始每个蚀刻步骤，这也可以通过外部同步信号来实现 其表示每个蚀刻步骤的开始和结束; 然后，当达到阈值时，启动比第一浓度最大值的过程更长的延迟时间; 对于第二浓度最大值，然后在延迟时间过去之后确定; 并且为了监测蚀刻步骤的第二浓度最大值是否超过或低于预定值，为了检测材料转变。

公开(公告)号：US09032608B2

公开(公告)日：2015-05-19

申请号：US13061919

申请日：2009-07-08

申请人： Franz Laermer ,  Thorsten Pannek ,  Ralf Reichenbach ,  Marian Keck

发明人： Franz Laermer ,  Thorsten Pannek ,  Ralf Reichenbach ,  Marian Keck

IPC分类号： B23P21/00 ,  B60C23/04 ,  H02N2/18 ,  H01L41/25 ,  H01L41/313

CPC分类号： B60C23/0411 ,  H01L41/25 ,  H01L41/313 ,  H02N2/18 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49128 ,  Y10T29/49169 ,  Y10T29/49828 ,  Y10T29/49904

摘要： In a method for manufacturing at least one mechanical-electrical energy conversion system including multiple individual parts, and a mechanical-electrical energy conversion, multiple different individual parts are positioned in an assembly device and joined in joining areas assigned to the individual parts in the assembly device, the individual parts including at least one piezoelectric element, one support structure and one seismic mass.

摘要翻译： 在用于制造至少一个包括多个独立部件的机电能转换系统和机电能转换的方法中，将多个不同的单独部件定位在组装装置中并且连接到分配给组件中的各个部件的接合区域 装置，各个部件包括至少一个压电元件，一个支撑结构和一个地震块。

公开(公告)号：US08671746B2

公开(公告)日：2014-03-18

申请号：US13202561

申请日：2010-01-11

申请人： Franz Laermer ,  Thorsten Pannek ,  Ralf Reichenbach ,  Marian Keck

发明人： Franz Laermer ,  Thorsten Pannek ,  Ralf Reichenbach ,  Marian Keck

IPC分类号： G01M17/02

CPC分类号： B60C23/041 ,  H01L41/1134

摘要： A piezoelectric generator includes a piezoelectric element, a spring element, a mass element, and at least one stop. The piezoelectric element, the spring element, and the mass element form a system which can oscillate. The stop limits the oscillation of the system which can oscillate, at least on one side. The stop is formed from a ductile material or has a coating of a ductile material.

摘要翻译： 压电发电机包括压电元件，弹簧元件，质量元件和至少一个止动件。 压电元件，弹簧元件和质量元件形成可振荡的系统。 停止限制系统的振荡，该系统至少可以在一侧振荡。 止动件由延性材料形成或具有延性材料的涂层。