摘要:
A wet etching system for selectively patterning substrates having regions covered with self-assembled monolayers (SAM) thereby controlling the etch profile. The system contains a) a liquid etching solution; and b) at least one additive to the liquid etching solution having a higher affinity to the regions of the substrate covered with the SAMs than to the other regions of the substrate. Also provided is a method of selectively patterning substrates having regions covered with self-assembled monolayers (SAMs), thereby controlling the etch profile, the method consisting of the steps of a) providing a liquid etching solution; b) adding at least one additive to said etching solution having a higher affinity to the regions of the substrate covered with the SAMs than to the other regions of the substrate; and c) etching said substrate with said liquid etching solution containing at least one additive.
摘要:
A frame (14) that includes a smart card connector (12), is mounted primarily behind a window (18) in a panel (16) so a smart card can be inserted rearwardly though the window and against contacts that read and/or write to the card. The panel has window edge portions that lie around the window, and the frame includes a pair of lugs (42) that are projected into the window and that are then raised so lug slots (45) receive an upper edge portion of the window. The frame also has a pair of fingers (60) that are resiliently biased forwardly, that press against the rear of the panel when the lugs are first projected into the window, and that snap forward and lie against window lower edge portions when the lugs are raised. The fingers lie at the ends of laterally extending beams that project from a main portion of the frame. The lugs and fingers form ramps (56, 78) that vertically guide the leading edge of a card being inserted, and the lugs form side guides (112).
摘要:
Provides semiconductor devices and method for fabricating devices having a high thermal dissipation efficiency. An example device comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
摘要:
The invention relates to a method for creating a pattern on a substrate comprising a first alignment structure, using an elastomeric stamp comprising a patterning structure and a second alignment structure. The method comprises a moving step for moving the elastomeric stamp towards the substrate, and a deformation step for deforming the patterning structure with a tensile or compressive force generated by cooperation of the first alignment structure and the second alignment structure.
摘要:
A method for forming an electrically conductive layer having predetermined patterns for semiconductor devices includes providing a substrate, forming an insulation layer having OH functional groups on the substrate, forming a patterned polymer layer on the insulation layer, etching the insulation layer to create a patterned insulation layer which has the same patterns as the patterned polymer layer, stripping the patterned polymer layer to expose the patterned insulation layer, treating the patterned insulation layer with a coupling agent which reacts with the OH functional groups, treating the patterned insulation layer with a catalyst-containing solution in which the catalyst reacts with the coupling agent, and depositing electrically conductive material on the patterned insulation layer which is catalytically active.
摘要:
The design of a current-to-voltage converter with a uniform transfer function in its feedback loop (12) is proposed. It employs a very large, double-shielded measuring resistance (13) and a two-stage setup to perform a fully linear I/V conversion with a conversion factor of 10.sup.10 V/A and a bandwidth of 1 MHz. With the low noise level attained, and with the bandwidth and conversion factor mentioned, it will be possible to monitor events involving as few as 300 electrons. The current-to-voltage converter comprises a differential input amplifier (8), a current source (11) for supplying said differential amplifier (8), at least one operational amplifier (10, 14), and a high-valued measuring resistance (13) the voltage drop across which is being taken as a measure of the current to be detected. The measuring resistance (13) is arranged in a feedback loop (12) associated with said differential amplifier (8). The measuring resistance (13) is double-shielded from the remainder of the current/voltage converter circuitry through its arrangement inside a cylindrical capacitor C which acts as a first shield, and which is in turn connected to a casing (15, 25) surrounding the differential amplifier (8) and the feedback loop (12) and which constitutes a second shield.
摘要:
Integrated adsorption and heat exchanger devices are provided for solid sorption refrigeration systems (1), together with methods for making such devices. An integrated adsorption and heat exchanger device (20, 30, 45, 52) comprises a solid material having formed therein both a porous adsorption structure (21, 31, 44, 53), which is pervious to an adsorbate of said system (1), and a heat exchanger structure (22, 32), which is impervious to said adsorbate, for heat exchange with the porous adsorption structure in operation of the system (1).
摘要:
An integrated circuit coupling device includes an integrated circuit package; and an optical data transmission medium connected to the integrated circuit package, and comprising a movable coolant, adapted to remove heat from the integrated circuit package, in operation.
摘要:
An assembly includes a chip including an integrated circuit, a casing including an integrated circuit and having an upper portion formed on a side of the chip and lower portion formed on another side of the chip, plural through-wafer vias (TWVs) for electrically connecting the integrated circuit of the chip and the integrated circuit of the casing, and a card connected to the casing for electrically connecting the casing to a system board.
摘要:
Integrated adsorption and heat exchanger devices are provided for solid sorption refrigeration systems (1), together with methods for making such devices. An integrated adsorption and heat exchanger device (20, 30, 45, 52) comprises a solid material having formed therein both a porous adsorption structure (21, 31, 44, 53), which is pervious to an adsorbate of said system (1), and a heat exchanger structure (22, 32), which is impervious to said adsorbate, for heat exchange with the porous adsorption structure in operation of the system (1).