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    Dual damascene process
    51.
    发明授权
    Dual damascene process 有权
    双镶嵌工艺

    公开(公告)号：US07253112B2

    公开(公告)日：2007-08-07

    申请号：US10915633

    申请日：2004-08-10

    申请人： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

    发明人： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

    IPC分类号： H01L21/311

    CPC分类号： H01L21/76808

    摘要： A method of fabricating semiconductor devices using dual damascene processes to form plugs in the via holes composed of various high etch materials and bottom anti-reflection coating (BARC) materials. After via hole etch, a layer of high etch rate plug material is spin coated to fill the via holes. Next, a layer of photoresist is applied. The photoresist is then exposed through a mask and developed to form an etch opening. Using the remaining photoresist as an etch mask and with a bottom anti-reflection coating (BARC) as protection, the oxide or low k layer is etched to form subsequent wiring. The etch step is known as a damascene etch step. The remaining photoresist is removed and the trench/via openings are filled with metal forming inlaid metal interconnect wiring and contact vias.

    摘要翻译： 使用双镶嵌工艺制造半导体器件的方法来在由各种高蚀刻材料和底部抗反射涂层（BARC）材料组成的通孔中形成插塞。 在通孔蚀刻之后，旋涂一层高蚀刻速率的塞材料以填充通孔。 接下来，施加一层光致抗蚀剂。 然后将光致抗蚀剂通过掩模曝光并显影以形成蚀刻开口。 使用剩余的光致抗蚀剂作为蚀刻掩模和底部防反射涂层（BARC）作为保护，氧化物或低k层被蚀刻以形成后续布线。 蚀刻步骤被称为镶嵌蚀刻步骤。 去除剩余的光致抗蚀剂，并且通过金属形成金属互连布线和接触通孔填充沟槽/通孔开口。

    Contact hole printing by packing and unpacking
    53.
    发明授权
    Contact hole printing by packing and unpacking 有权
    接缝孔打印通过包装和拆包

    公开(公告)号：US07094686B2

    公开(公告)日：2006-08-22

    申请号：US10737024

    申请日：2003-12-16

    申请人： Dahchung Oweyang ,  Jian-Hong Chen ,  Bang-Chein Ho

    发明人： Dahchung Oweyang ,  Jian-Hong Chen ,  Bang-Chein Ho

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76816 ,  G03F1/70 ,  G03F7/0035 ,  H01L21/0274

    摘要： A method is provided for the creation of contact holes. The invention provides two masks. The first mask, referred to as the packed mask, comprises the desired contact holes, which are part of the creation of a semiconductor device. To the packed mask are added padding holes in order to increase the hole density of the packed mask. An insulation layer is formed to protect the first layer of material. The second mask, referred to an the unpacking mask, comprises openings at the same locations as the locations of the padding holes of the first mask, the openings provided in the second mask have slightly larger dimensions than the padding holes of the first mask. A first exposure is made using the packed mask, a second exposure of the same surface area is made using the unpacking mask. The unpacking mask is used to selectively cover the padding contact holes, resulting in the final image. Two types of unpacking masks can be used, a first type having unpacking holes that surround the desired hole pattern, a second type having unpacking holes that align with the desired hole pattern.

    摘要翻译： 提供了一种创建接触孔的方法。 本发明提供了两个掩模。 称为包装掩模的第一掩模包括期望的接触孔，这是半导体器件的创建的一部分。 为了增加包装面罩的孔密度，向包装的面膜中加入填充孔。 形成绝缘层以保护第一层材料。 第二掩模（称为开封掩模）包括与第一掩模的填充孔的位置相同位置处的开口，设置在第二掩模中的开口具有比第一掩模的填充孔稍大的尺寸。 使用包装掩模进行第一次曝光，使用开封掩模进行相同表面积的第二次曝光。 打开包装的面罩用于选择性地覆盖填充接触孔，产生最终的图像。 可以使用两种类型的开封掩模，第一类型具有围绕所需孔图案的开封孔，第二类型具有与期望的孔图案对准的开封孔。

    Water soluble negative tone photoresist
    54.
    发明申请
    Water soluble negative tone photoresist 有权

    公开(公告)号：US20060154177A1

    公开(公告)日：2006-07-13

    申请号：US11373648

    申请日：2006-03-10

    申请人： Bang-Chien Ho ,  Jian-Hong Chen

    发明人： Bang-Chien Ho ,  Jian-Hong Chen

    IPC分类号： G03C1/76

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/038

    摘要： A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

    Method of forming a dual damascene structure
    56.
    发明申请
    Method of forming a dual damascene structure 有权
    形成双镶嵌结构的方法

    公开(公告)号：US20050191840A1

    公开(公告)日：2005-09-01

    申请号：US10789083

    申请日：2004-02-27

    申请人： Bang-Chein Ho ,  Jian-Hong Chen ,  D.J. Ou-Yang

    发明人： Bang-Chein Ho ,  Jian-Hong Chen ,  D.J. Ou-Yang

    IPC分类号： H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/76808

    摘要： An improved method of forming an integrated circuit that includes a dual damascene interconnect is described. A contact via hole is formed in a dielectric layer disposed above a semiconductor substrate. A protective layer is disposed on top of the dielectric layer and in the contact via hole, and subsequently forming as a recessed plug in the via, followed by etching to form a trench to complete formation of a dual damascene opening.

    摘要翻译： 描述了一种形成包括双镶嵌互连的集成电路的改进方法。 在设置在半导体衬底上的电介质层中形成接触通孔。 保护层设置在电介质层的顶部和接触通孔中，随后在通孔中形成凹入的塞子，然后蚀刻以形成沟槽以完成双镶嵌开口的形成。

    Method for preventing the etch transfer of sidelobes in contact hole patterns
    57.
    发明授权
    Method for preventing the etch transfer of sidelobes in contact hole patterns 失效
    用于防止接触孔图案中旁瓣蚀刻转移的方法

    公开(公告)号：US06905621B2

    公开(公告)日：2005-06-14

    申请号：US10268586

    申请日：2002-10-10

    申请人： Bang-Chein Ho ,  Jian-Hong Chen

    发明人： Bang-Chein Ho ,  Jian-Hong Chen

    IPC分类号： G03F7/00 ,  H01L21/027 ,  B44C1/22

    CPC分类号： H01L21/0274 ,  G03F7/0035

    摘要： A method is provided for removing sidelobes that are formed when patterning a positive photoresist layer with an Att. PSM, Alt. PSM or a binary mask with scattering bars. A water soluble negative tone photoresist is coated over the positive photoresist pattern and is exposed through a mask having small islands that correspond in shape, size and location to the small holes in the mask used to pattern the positive tone photoresist. After development, exposed negative tone photoresist covers sidelobes formed by the positive tone process. The negative tone photoresist functions as a mask for a subsequent etch transfer of the positive tone pattern into the substrate. A method of aligning openings in a positive tone pattern over the same openings in a negative tone pattern is also useful in preventing sidelobes in the positive tone photoresist from being transferred into the substrate.

    摘要翻译： 提供了一种用于去除在用Ar形成正性光致抗蚀剂层时形成的旁瓣的方法。 PSM，Alt PSM或具有散射条的二进制掩码。 将水溶性负色调光致抗蚀剂涂覆在正性光致抗蚀剂图案上，并通过具有小形状的掩模将其形状，尺寸和位置对应于用于图案化正色调光致抗蚀剂的掩模中的小孔曝光。 显影后，曝光的负光致抗蚀剂覆盖由正色调处理形成的旁瓣。 负色调光阻用作掩模，用于随后将正色调图案蚀刻转移到衬底中。 在负色调图案的相同开口上以正色调图案对准开口的方法也可用于防止正色调光致抗蚀剂中的旁瓣被转移到基底中。