公开(公告)号：US20100202088A1

公开(公告)日：2010-08-12

申请号：US12320878

申请日：2009-02-06

申请人： Naoki Ohta ,  Hiroshi Yamazaki ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Kei Hirata

发明人： Naoki Ohta ,  Hiroshi Yamazaki ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Kei Hirata

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  G01R33/098

摘要： The invention is devised to provide a magnetoresistive element that is hardly susceptible to harmful influence of unnecessary magnetic fields and noise of heat even when reduction in size is achieved to be adaptable to higher recording density, and therefore that is excellent in operational reliability. The magnetoresistive element includes a stacked structure including, in order: a magnetically pinned layer whose magnetization direction is fixed in a given direction; a non-magnetic layer; a magnetically free layer whose magnetization direction changes according to an external magnetic field; and an antiferromagnetic bias layer exchange-coupled with the magnetically free layer. The exchange-coupling magnetic field between the magnetically free layer and the antiferromagnetic bias layer is smaller than a saturation magnetic field of the magnetically free layer.

摘要翻译： 本发明的目的在于提供一种磁阻元件，即使实现了适应于较高记录密度的尺寸减小，几乎不易受不必要的磁场的有害影响和热噪声的影响，因此具有优异的操作可靠性。 磁阻元件包括层叠结构，其顺序包括：磁性固定层，其磁化方向在给定方向上固定; 非磁性层; 磁化方向根据外部磁场而变化的无磁性层; 和与磁性层交换耦合的反铁磁偏置层。 磁性层和反铁磁偏置层之间的交换耦合磁场小于无磁层的饱和磁场。

公开(公告)号：US07743666B2

公开(公告)日：2010-06-29

申请号：US11389065

申请日：2006-03-27

申请人： Tetsuya Kuwashima ,  Naoki Ohta

发明人： Tetsuya Kuwashima ,  Naoki Ohta

IPC分类号： G01L1/00

CPC分类号： G01L1/005 ,  G01P15/0894 ,  G01P15/18 ,  H01L45/00

摘要： A tunneling effect element, including an insulating layer that forms a tunneling barrier, a lower electrode that is conductive and non-magnetic, and is formed on a bottom surface of said insulating layer, an upper electrode that is conductive and non-magnetic, and is formed on a top surface of said insulating layer, and a transmission member. The transmission member is made of insulating material that is formed surrounding the insulating layer and the lower and upper electrodes. The transmission member is also formed on a surface of an object to be detected, and transmits deformation of the object to be detected to the insulating layer. The tunneling effect element detects a change in stress of the object to be detected as a change in electric resistance.

摘要翻译： 隧道效应元件，包括形成隧道势垒的绝缘层，导电和非磁性的下电极，并且形成在所述绝缘层的底表面上，导电和非磁性的上电极，以及 形成在所述绝缘层的上表面和透射构件上。 传输构件由形成在绝缘层和下电极和上电极周围的绝缘材料制成。 传输构件也形成在待检测物体的表面上，并且将被检测物体的变形发送到绝缘层。 隧道效应元件检测作为电阻变化的待检测物体的应力变化。

公开(公告)号：US07631416B2

公开(公告)日：2009-12-15

申请号：US11798427

申请日：2007-05-14

申请人： Naoki Ohta ,  Kazuki Sato

发明人： Naoki Ohta ,  Kazuki Sato

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3173 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3967 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T428/1121

摘要： A reticle having a convex portion and a concave portion is used to form a convex portion and concave portion in the resist pattern for magnetic detection element and conductive layer, respectively. Then, with each resist pattern as a mask, unnecessary portions are removed to determine an initial height and to form a convex portion and concave portion in the magnetic detection element layer and in the conductive layer, respectively. Then, based on a ratio between widths of the convex portion and of the concave portion of the magnetic detection element layer, a deviation of the magnetic detection element layer is obtained, and a deviation of the conductive layer is obtained in a similar way, and based on these deviations the medium facing surface is ground with the conductive layer as a resistance sensor so that the height of the magnetic detection element layer be a desired value.

摘要翻译： 使用具有凸部和凹部的掩模版，在用于磁检测元件和导电层的抗蚀剂图案中分别形成凸部和凹部。 然后，以每个抗蚀剂图案作为掩模，去除不需要的部分以确定初始高度，并且在磁检测元件层和导电层中分别形成凸部和凹部。 然后，基于磁检测元件层的凸部和凹部的宽度之间的比例，获得磁检测元件层的偏差，并且以类似的方式获得导电层的偏差，并且 基于这些偏差，将介质表面用导电层作为电阻传感器研磨，使得磁性检测元件层的高度为期望值。

公开(公告)号：US20090231762A1

公开(公告)日：2009-09-17

申请号：US12047722

申请日：2008-03-13

申请人： Naoki Ohta ,  Satoshi Miura ,  Tomohito Mizuno

发明人： Naoki Ohta ,  Satoshi Miura ,  Tomohito Mizuno

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286

摘要： An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof.

摘要翻译： MR元件包括被钉扎层，自由层和非磁性空间层或夹在被钉扎层和自由层之间的隧道势垒层。 自由层的磁化方向基本上垂直于其膜表面，并且被钉扎层的磁化方向基本上平行于其膜表面。

公开(公告)号：US07583462B2

公开(公告)日：2009-09-01

申请号：US11851043

申请日：2007-09-06

申请人： Naoki Ohta ,  Tetsuya Kuwashima

发明人： Naoki Ohta ,  Tetsuya Kuwashima

IPC分类号： G11B5/09 ,  G11B21/02

CPC分类号： G11B5/3136 ,  G11B5/3133 ,  G11B5/6064 ,  G11B5/607

摘要： Timely and proper flying height adjustment is achieved using a controller, which is designed for a magnetic recording and reproducing apparatus that does not use a magnetic head having a heating element for flying height adjustment without any modification. A head amplifier includes a write amplifier for applying a write current to a write head element, a read amplifier for amplifying a read voltage output from a read head element and outputting a read signal, a heating element driver for applying a heat generating current to at least one heating element for adjusting a flying height, and a heat controller for controlling the heating element driver.

摘要翻译： 使用控制器实现及时和适当的飞行高度调节，所述控制器被设计用于不使用具有用于飞行高度调节的加热元件的磁头的磁记录和再现装置，而不进行任何修改。 头放大器包括用于向写头元件施加写入电流的写入放大器，用于放大从读取头元件输出的读取电压并输出读取信号的读取放大器，用于向发生电流施加发热电流的加热元件驱动器 用于调节飞行高度的至少一个加热元件和用于控制加热元件驱动器的热控制器。

公开(公告)号：US07564653B2

公开(公告)日：2009-07-21

申请号：US11617201

申请日：2006-12-28

申请人： Naoki Ohta ,  Kazuki Sato

发明人： Naoki Ohta ,  Kazuki Sato

IPC分类号： G11B5/54

CPC分类号： G11B5/54 ,  G11B5/40

摘要： A magnetic disk drive apparatus includes a magnetic disk, a ramp mechanism, a pair of magnetic head sliders each having an MR read head element, and a load/unload mechanism for retracting the pair of magnetic head sliders to the ramp mechanism under unloading states and for putting the pair of magnetic head sliders back to face front and back surfaces of the magnetic disk respectively under loading states. The ramp mechanism has head resting portions and a pair of permanent magnets. The pair of magnetic head sliders respectively resting in the head resting portions in a manner to face to each other during unloaded states. The pair of permanent magnets generates a closed loop magnetic field applied to the pair of magnetic head sliders rested in the respective head resting portions. The magnetic fields applied to the respective magnetic head sliders are in opposite directions along the track width of the magnetic head sliders.

摘要翻译： 磁盘驱动装置包括磁盘，斜坡机构，每个具有MR读取头元件的一对磁头滑块，以及用于在卸载状态下将一对磁头滑块回缩到斜坡机构的装载/卸载机构，以及 用于将一对磁头滑块分别放置在负载状态下面对磁盘的前表面和后表面。 斜坡机构具有头部静止部分和一对永磁体。 一对磁头滑块在卸载状态下以彼此面对的方式分别搁置在头部静止部分中。 一对永磁体产生一个闭环磁场，该磁场施加到搁置在相应磁头固定部分中的一对磁头滑块。 施加到相应的磁头滑块的磁场沿着磁头滑块的轨道宽度处于相反的方向。

公开(公告)号：US20080285178A1

公开(公告)日：2008-11-20

申请号：US11798744

申请日：2007-05-16

申请人： Naoki Ohta ,  Kosuke Tanaka ,  Kazuki Sato

发明人： Naoki Ohta ,  Kosuke Tanaka ,  Kazuki Sato

IPC分类号： G11B5/10

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： A thin film magnetic head comprises a lower magnetic shield layer and an upper magnetic shield layer which are mutually opposed in the layering direction, a magnetoresistance effect element having a free layer, and a bias-applying layer which applies a bias magnetic field to the magnetoresistance effect element. The free layer is positioned between the lower magnetic shield layer and the upper magnetic shield layer, and is positioned on the side of the media-opposed surface. The bias-applying layer has a first portion, a second portion, and a third portion. The first portion and the second portion are positioned at a distance in the track width direction so as to enclose the magnetoresistance effect element therebetween. The third portion is positioned either between the magnetoresistance effect element and the lower magnetic shield layer or between the magnetoresistance effect element and the upper magnetic shield layer, and connects the first portion and the second portion.

摘要翻译： 薄膜磁头包括在分层方向上相互相对的下磁屏蔽层和上磁屏蔽层，具有自由层的磁阻效应元件和向磁阻施加偏置磁场的偏置施加层 效果元素。 自由层位于下磁屏蔽层和上磁屏蔽层之间，并位于介质相对表面的一侧。 偏置施加层具有第一部分，第二部分和第三部分。 第一部分和第二部分位于轨道宽度方向上的一定距离处，以便在其间包围磁阻效应元件。 第三部分位于磁阻效应元件和下磁屏蔽层之间，或位于磁阻效应元件和上磁屏蔽层之间，并连接第一部分和第二部分。

公开(公告)号：US20060220781A1

公开(公告)日：2006-10-05

申请号：US11389065

申请日：2006-03-27

申请人： Tetsuya Kuwashima ,  Naoki Ohta

发明人： Tetsuya Kuwashima ,  Naoki Ohta

IPC分类号： H01L43/00

CPC分类号： G01L1/005 ,  G01P15/0894 ,  G01P15/18 ,  H01L45/00

摘要： This invention provides a tunneling effect element that has versatility and that does not receive the effects of drift due to differences in the thermal-expansion coefficient of the lower and upper electrodes, and is not easily affected by external magnetic fields. The disclosed tunneling effect element 1 comprises: an insulating layer 11 that forms a tunneling barrier, a lower electrode 12 that is conductive and is formed on the bottom surface of the insulating layer 11, an upper electrode 13 that is conductive and is formed on the top surface of the insulating layer 11, and a transmission member 5 that is formed around the insulating layer 11, lower electrode 12 and upper electrode 13, and transmits the behavior of the object to be detected to the insulating layer 11.

摘要翻译： 本发明提供了具有通用性的隧道效应元件，并且由于上下电极的热膨胀系数的差异而不会受到漂移的影响，并且不容易受到外部磁场的影响。 所公开的隧道效应元件1包括：形成隧道势垒的绝缘层11，导电并形成在绝缘层11的底表面上的下电极12，导电并形成在绝缘层11上的上电极13 绝缘层11的上表面和形成在绝缘层11，下电极12和上电极13周围的透射构件5，并将被检测物体的行为传递到绝缘层11。

公开(公告)号：US06656538B2

公开(公告)日：2003-12-02

申请号：US10272860

申请日：2002-10-18

申请人： Kazuki Sato ,  Noriaki Kasahara ,  Naoki Ohta

发明人： Kazuki Sato ,  Noriaki Kasahara ,  Naoki Ohta

IPC分类号： B05D300

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3133 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3173 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F41/308

摘要： Provided are a method of manufacturing a magnetoresistive device and a method of manufacturing a thin film magnetic head capable of efficiently forming a magnetoresistive device having an extremely small magnetoresistive film pattern, and capable of reducing variations in dimensions of the magnetoresistive film pattern. Further, provided is a method of forming a thin film pattern capable of efficiently forming a plurality of thin film patterns with different sizes on a same base with accuracy according to the thin film patterns. Electron beam lithography or photolithography is selectively used according to the sizes of patterns to be formed, so while the dimensional accuracy of a portion specifically requiring higher accuracy can be secured, the patterns can be efficiently formed.

公开(公告)号：US6013806A

公开(公告)日：2000-01-11

申请号：US112379

申请日：1998-07-09

申请人： Toshifumi Akiba ,  Tutomu Ebata ,  Tatsuru Saito ,  Sadahiro Shimizu ,  Keiichi Hirai ,  Naoki Ohta ,  Toshiaki Tojo

发明人： Toshifumi Akiba ,  Tutomu Ebata ,  Tatsuru Saito ,  Sadahiro Shimizu ,  Keiichi Hirai ,  Naoki Ohta ,  Toshiaki Tojo

IPC分类号： C07C255/31 ,  C07C271/22 ,  C07D209/54

CPC分类号： C07C271/22 ,  C07C255/31 ,  C07D209/54 ,  C07C2101/02 ,  C07C2101/04 ,  C07C2101/08 ,  C07C2101/14

摘要： This invention is to provide a compound represented by the following formula (I) and a compound represented by the following formula (II) useful as an antibacterial agent which is obtained by the compound of formula (I), and also to provide a novel synthetic process for the inexpensive, short-step and industrially advantageous production thereof. ##STR1##

摘要翻译： 本发明提供由下式（I）表示的化合物和由下式（II）表示的化合物，其可用作通过式（I）化合物获得的抗菌剂，并且还提供新的合成 其制造成本低廉且工业上有利的生产方法。