公开(公告)号：US06891212B2

公开(公告)日：2005-05-10

申请号：US10697191

申请日：2003-10-30

申请人： Manish Sharma ,  Thomas C. Anthony ,  Lung Tran

发明人： Manish Sharma ,  Thomas C. Anthony ,  Lung Tran

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/76

CPC分类号： G11C11/16

摘要： A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.

摘要翻译： 磁存储器件包括第一和第二铁磁层。 每个铁磁层具有可以在两个方向中的任一方向上取向的磁化。 第一铁磁层具有比第二铁磁层更高的矫顽力。 磁存储器件还包括用于与第二铁磁层形成闭合磁通路径的结构。

公开(公告)号：US06597049B1

公开(公告)日：2003-07-22

申请号：US10132998

申请日：2002-04-25

申请人： Manoj Bhattacharyya ,  Thomas C. Anthony

发明人： Manoj Bhattacharyya ,  Thomas C. Anthony

IPC分类号： H01L2348

CPC分类号： H01L27/222 ,  G11C11/16 ,  H01L43/08

摘要： A conductor structure for a magnetic memory is disclosed. The conductor structure includes one or more conductors that have a width that is less than a dimension of a memory cell in a direction the conductor crosses the memory cell. A thickness of the conductor is preselected to reduce a cross-sectional area of the conductor and increase a current density within the conductor. A magnetic field sufficient to rotate an alterable orientation of magnetization in a data layer of the memory cell can be generated by a reduced magnitude of a current flowing in the conductor due to the increased current density. Alternatively, the magnitude of the current can be reduced by increasing a thickness of the conductor to increase its area and reduce its resistance to the flow of electrons and partially cladding the conductor to reduce a total magnetic path around the conductor thereby increasing the magnetic field.

摘要翻译： 公开了一种用于磁存储器的导体结构。 导体结构包括一个或多个导体，其宽度小于存储单元在导体与存储单元交叉的方向上的尺寸。 预先选择导体的厚度以减小导体的横截面积并增加导体内的电流密度。 由于增加的电流密度，可以通过在导体中流动的电流的幅度减小来产生足以旋转存储器单元的数据层中的可变取向磁化的磁场。 或者，可以通过增加导体的厚度以增加其面积并降低其对电子流的阻力并部分地包覆导体以减小导体周围的总磁路，从而增加磁场来减小电流的大小。

公开(公告)号：US06358757B2

公开(公告)日：2002-03-19

申请号：US09824810

申请日：2001-04-03

申请人： Thomas C. Anthony

发明人： Thomas C. Anthony

IPC分类号： H01L2100

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C11/15 ,  H01L27/222

摘要： A magnetic memory cell is disclosed having a structure that prevents disruptions to the magnetization in the sense layer of the magnetic memory cell. In one embodiment, the structure includes a high permeability magnetic film that serves as a keeper for the sense layer magnetization. The keeper structure provides a flux closure path that directs demagnetization fields away from the sense layer. In another embodiment, the structure contains a hard ferromagnetic film that applies a local magnetic field to the sense layer in the magnetic memory cell.

摘要翻译： 公开了一种具有防止磁存储单元的感测层中的磁化破坏的结构的磁存储单元。 在一个实施例中，该结构包括用作感测层磁化的保持器的高磁导率磁性膜。 保持器结构提供了将去磁场远离感测层的磁通闭合路径。 在另一个实施例中，该结构包含将局部磁场施加到磁存储单元中的感测层的硬铁磁膜。

公开(公告)号：US06205053B1

公开(公告)日：2001-03-20

申请号：US09597958

申请日：2000-06-20

申请人： Thomas C. Anthony

发明人： Thomas C. Anthony

IPC分类号： G11C1115

CPC分类号： G11C11/15

摘要： A magnetoresistive memory cell includes first and second conductive magnetic layers. One of the first and second layers is substantially “H” or “I” shaped. A separation layer is disposed between the first and second layers. In various embodiments, the separation layer is either conductive or nonconductive. In various embodiments, at least one of the first and second layers comprises one of a nickel-iron (NiFe), cobalt-iron (CoFe), or a nickel-iron-cobalt (NiFeCo) alloy. In one embodiment, the memory cell apparatus includes conductive magnetic reference and data layers. The data layer is substantially “H” or “I” shaped. A separation layer is disposed between the reference and data layers. The cell may be a tunneling magnetoresistive cell or a giant magnetoresistive cell. The separation layer is nonconductive in one embodiment and conductive in an alternative embodiment. In various embodiments, one of the reference and data layers comprises one of a nickel-iron, cobalt-iron, or a nickel-iron-cobalt alloy.

摘要翻译： 磁阻存储单元包括第一和第二导电磁性层。 第一层和第二层之一基本上为“H”或“I”形。 分离层设置在第一层和第二层之间。 在各种实施方案中，分离层是导电的或不导电的。 在各种实施例中，第一层和第二层中的至少一层包括镍 - 铁（NiFe），钴 - 铁（CoFe）或镍 - 铁 - 钴（NiFeCo）合金中的一种。 在一个实施例中，存储单元设备包括导电磁性参考和数据层。 数据层基本上是“H”或“I”形。 分离层设置在参考层和数据层之间。 该电池可以是隧道磁阻电池或巨磁阻电池。 在一个实施例中，分离层是非导电的，并且在另一实施例中是导电的。 在各种实施例中，参考和数据层之一包括镍铁，钴铁或镍 - 铁 - 钴合金中的一种。

公开(公告)号：US5302461A

公开(公告)日：1994-04-12

申请号：US894398

申请日：1992-06-05

申请人： Thomas C. Anthony

发明人： Thomas C. Anthony

IPC分类号： G11B5/39 ,  H01B3/00 ,  H01B3/10 ,  H01L43/08 ,  G11B5/30

CPC分类号： G11B5/3903 ,  H01L43/08

摘要： A new class of materials for use as a dielectric to separate various metallic layers within a magnetoresistive transducer. The materials include oxides of Ta, Hf, Zr, Y, Ti, or Nb. Thin films of these materials, when fabricated in accordance with the teachings of the invention, constitute dielectric films which maintain their integrity as insulators at thicknesses down to 5 nm. Additionally, the adhesion of this class of dielectrics equals or exceeds that of commonly used dielectrics.

摘要翻译： 一种新的材料，用作电介质以分离磁阻换能器内的各种金属层。 这些材料包括Ta，Hf，Zr，Y，Ti或Nb的氧化物。 当根据本发明的教导制造时，这些材料的薄膜构成了作为绝缘体的厚度维持在5nm以下的绝缘体的电介质膜。 此外，这类电介质的粘合力等于或超过常用电介质的粘附。

公开(公告)号：US20110050764A1

公开(公告)日：2011-03-03

申请号：US12547597

申请日：2009-08-26

申请人： Henryk Birecki ,  Napoleon Leoni ,  Omer Gila ,  Thomas C. Anthony

发明人： Henryk Birecki ,  Napoleon Leoni ,  Omer Gila ,  Thomas C. Anthony

IPC分类号： B41J29/38 ,  B41J2/015

CPC分类号： B41J11/0015 ,  B41J2/0057

摘要： An imaging method includes coating a transfer member with an adhesion promoter in a liquid state, changing the adhesion promoter on the transfer member from the liquid state to at least one of a solid state and a gel state, depositing a liquid marking agent on the solidified adhesion promoter corresponding to an image, changing a state of the adhesion promoter from the solid state to the flowable state, and transferring the liquid marking agent and the adhesion promoter in the flowable state from the transfer member to a substrate to form a hard version of the image thereon.

摘要翻译： 一种成像方法包括用液态粘合促进剂涂覆转印部件，将转印部件上的粘合促进剂从液态改变为固态和凝胶状态中的至少一种，在凝固状态下沉积液体标记试剂 对应于图像的粘合促进剂，将粘合促进剂的状态从固体状态改变为可流动状态，以及将可流动状态的液体标记剂和粘合促进剂从转印构件转移到基底以形成硬版本 其上的图像。

公开(公告)号：US07057920B2

公开(公告)日：2006-06-06

申请号：US10832912

申请日：2004-04-26

申请人： Frederick A. Perner ,  Thomas C. Anthony ,  Robert C Walmsley ,  Lung Tran

发明人： Frederick A. Perner ,  Thomas C. Anthony ,  Robert C Walmsley ,  Lung Tran

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.

摘要翻译： 在具有其中矫顽力在温度升高时减小的材料的所选择的两个导体自旋阀存储器（SVM）单元上进行热辅助写入操作的方法。 在特定实施例中，当施加到第一导体时，通过从第一电压电位流向第二电压电位的第一写入电流建立第一写入磁场。 第二写入磁场通过施加到第二导体的从第三电压电位流向第四电压电位的第二写入电流来建立。 第一导体的电压电位大于第二导体的电压电位。 结果，第三电流从第一导体流过SVM电池流到第二导体。 SVM单元具有内部电阻，使得流动电流在SVM单元内产生热量。 由于SVM单元是自加热的，所以SVM单元的矫顽力低于组合的写入磁场。

公开(公告)号：US06937506B2

公开(公告)日：2005-08-30

申请号：US10753539

申请日：2004-01-08

申请人： Thomas C. Anthony ,  Frederick A. Perner ,  Heon Lee

发明人： Thomas C. Anthony ,  Frederick A. Perner ,  Heon Lee

IPC分类号： G11C11/02 ,  G11C11/14 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L43/08

CPC分类号： G11C11/15

摘要： A random access memory (MRAM) that includes a magnetic memory cell that is switchable between two states under the influence of a magnetic field. The MARAM also includes an electrical bit line coupled to the magnetic memory cell for generating the magnetic field. The electrical bit line includes a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell. A thermal insulator is positioned between the conductive portion and the magnetic memory cell, and the magnetic component has at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.

摘要翻译： 一种随机存取存储器（MRAM），其包括在磁场影响下在两个状态之间切换的磁存储单元。 MARAM还包括耦合到磁存储单元的电位线，用于产生磁场。 电位线包括导电部件和磁性部件，以将与磁场相关联的磁通量引向磁存储器单元。 热绝缘体位于导电部分和磁存储单元之间，并且磁性部件具有至少一个引导部分，该引导部分从导电部件朝向磁存储器单元延伸，以引导围绕热绝缘体的至少一部分的磁通量 。

公开(公告)号：US06936903B2

公开(公告)日：2005-08-30

申请号：US10692546

申请日：2003-10-24

申请人： Thomas C. Anthony ,  Manish Sharma ,  Manoj K. Bhottacharyya

发明人： Thomas C. Anthony ,  Manish Sharma ,  Manoj K. Bhottacharyya

IPC分类号： H01L27/105 ,  G11C11/16 ,  H01L21/82 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/00 ,  G11C11/00 ,  G11C11/14

CPC分类号： H01L27/222 ,  G11C11/16 ,  H01L43/08

摘要： An exemplary magnetic memory cell comprises a data layer, a soft reference layer having a lower magnetic energy than the data layer, and spacer layer between the data layer and the soft reference layer.

摘要翻译： 示例性磁存储单元包括数据层，具有比数据层低的磁能的软参考层以及数据层和软参考层之间的间隔层。

公开(公告)号：US06919594B2

公开(公告)日：2005-07-19

申请号：US10696991

申请日：2003-10-30

申请人： Manish Sharma ,  Thomas C. Anthony ,  Manoj Bhattacharyya

发明人： Manish Sharma ,  Thomas C. Anthony ,  Manoj Bhattacharyya

IPC分类号： H01L27/105 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/08 ,  H01L29/76

CPC分类号： G11C11/16 ,  G11C11/161

摘要： An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.

摘要翻译： 公开了一种诸如磁存储器件的电磁器件，其包括用于在产生磁阻响应中的偏移的边界处构造，衰减或消除杂散场的装置。 该装置包括导电第一层，并且衰减装置包括电磁耦合到第一层的吸收层，以在电操作期间衰减第一层边界处的杂散边界磁阻偏移。