Method of depositing an amorphous silicon film by APCVD
    51.
    发明授权
    Method of depositing an amorphous silicon film by APCVD 失效
    通过APCVD沉积非晶硅膜的方法

    公开(公告)号:US5930657A

    公开(公告)日:1999-07-27

    申请号:US731751

    申请日:1996-10-18

    摘要: This invention relates to a method for fabricating a thin film transistor used for LCD which can improve performance and productivity of an element by forming it with atmospheric pressure CVD method including processes for forming a gate electrode having sloped sides on an insulation substrate, forming a gate insulation film, a semiconductor layer and a channel protection layer successively with atmospheric pressure chemical vapor deposition method on all over the insulation substrate, patterning the channel protection layer such that the channel protection layer is to have a narrower pattern width than the pattern width of the gate electrode remaining the channel protection layer only on the semiconductor layer over the gate electrode, forming an impurity injected semiconductor layer for making resistive contact by injecting impurities into the semiconductor layer using the channel protection layer as a mask, and forming source and drain electrodes over the channel protection layer, the impurity injected semiconductor layer and the gate insulation film so that upper surface of the channel protection layer between them can be exposed.

    摘要翻译: 本发明涉及一种用于制造用于LCD的薄膜晶体管的方法,其可以通过用大气压CVD法形成元件的性能和生产率来提高元件的性能和生产率,该方法包括在绝缘基板上形成具有倾斜侧面的栅电极的工艺,形成栅极 绝缘膜,半导体层和沟道保护层,连续地使用大气压化学气相沉积法遍及绝缘基板,图案化沟道保护层,使得沟道保护层具有比图案宽度更窄的图案宽度 栅电极仅在栅电极上的半导体层上保留沟道保护层,通过使用沟道保护层作为掩模,形成用于通过将杂质注入到半导体层中的电阻接触的杂质注入半导体层,并且形成源极和漏极 通道保护层,t 他杂质注入半导体层和栅极绝缘膜,使它们之间的沟道保护层的上表面可以暴露。

    ORGANIC LIGHT EMITTING DIODE DEVICE
    52.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DEVICE 有权
    有机发光二极管装置

    公开(公告)号:US20110033960A1

    公开(公告)日:2011-02-10

    申请号:US12905808

    申请日:2010-10-15

    IPC分类号: H01L51/40

    摘要: An organic light emitting diode (OLED) device according to the present invention includes a first substrate; a first electrode on the first substrate in the pixel region, the first electrode formed of a metal; an organic light-emitting layer on the first electrode; a second electrode on the organic light-emitting layer, the second electrode formed of a transparent conductive material; and a transparent layer on the second electrode, the transparent layer including an inorganic material or a semiconductor material.

    摘要翻译: 根据本发明的有机发光二极管(OLED)器件包括第一衬底; 在所述像素区域中的所述第一基板上的第一电极,所述第一电极由金属形成; 在第一电极上的有机发光层; 有机发光层上的第二电极,由透明导电材料形成的第二电极; 以及第二电极上的透明层,所述透明层包括无机材料或半导体材料。

    Method of manufacturing color filter substrate of liquid crystal display device
    53.
    发明授权
    Method of manufacturing color filter substrate of liquid crystal display device 有权
    制造液晶显示装置滤色片基板的方法

    公开(公告)号:US07316873B2

    公开(公告)日:2008-01-08

    申请号:US11543918

    申请日:2006-10-06

    IPC分类号: G02B5/20 G02F1/1335

    摘要: A method of manufacturing color filter substrate of an LCD device is disclosed. The method includes forming black matrix layers on a substrate except in pixel regions, positioning a printing film above the substrate, the printing film including a color filter printing layer, an overcoat layer, and a transforming layer, and patterning a corresponding color filter layer and a corresponding overcoat layer in each of the pixel regions by applying light to the printing film in a region corresponding to any one of the pixel regions.

    摘要翻译: 公开了一种制造LCD装置的滤色器基板的方法。 该方法包括在像素区域之外的基板上形成黑矩阵层,将印刷膜定位在基板上方,印刷膜包括滤色器印刷层,外涂层和变换层,并且对相应的滤色器层进行图案化, 通过在对应于任一像素区域的区域中对印刷膜施加光,在每个像素区域中的相应的外涂层。

    Array substrate for liquid crystal display device and method of manufacturing the same
    55.
    发明授权
    Array substrate for liquid crystal display device and method of manufacturing the same 有权
    液晶显示装置用阵列基板及其制造方法

    公开(公告)号:US07027114B2

    公开(公告)日:2006-04-11

    申请号:US10847370

    申请日:2004-05-18

    IPC分类号: G02F1/1335

    摘要: An array substrate for and LCD device and a method of manufacturing the same is disclosed, to improve an aperture ratio with a simplified manufacturing process, which includes gate and data lines crossing each other on an insulating substrate to define a pixel region; a thin film transistor including a gate electrode and source and drain electrodes where the gate and data lines cross; a color filter formed on the source and drain electrodes and the pixel region, and having a contact hole exposing a predetermined portion of the drain electrode; and a pixel electrode on the color filter to be connected with the drain electrode through the contact hole.

    摘要翻译: 公开了一种用于LCD装置的阵列基板及其制造方法,以通过简化的制造工艺来提高开口率,该制造工艺包括在绝缘基板上彼此交叉以限定像素区域的栅极和数据线; 薄膜晶体管,其包括栅电极和栅极和数据线交叉的源极和漏极; 形成在所述源极和漏极以及所述像素区域上的滤色器,并且具有暴露所述漏电极的预定部分的接触孔; 以及通过接触孔与滤波电极连接的滤色器上的像素电极。

    Thin film transistor type optical sensor
    56.
    发明授权
    Thin film transistor type optical sensor 有权
    薄膜晶体管型光学传感器

    公开(公告)号:US06774396B1

    公开(公告)日:2004-08-10

    申请号:US09487173

    申请日:2000-01-19

    IPC分类号: H01L2904

    摘要: A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor, a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.

    摘要翻译: 图像检测器包括用于根据预定信号照射光的光源; 用于从光源透射光的窗口; 用于根据外部光的强度产生光电流的薄膜光电晶体管; 用于存储从薄膜光电晶体管传送的电荷信息的存储电容器; 薄膜开关晶体管,用于根据外部控制信号输出存储在存储电容器中的信息; 用于覆盖窗口的绝缘层,薄膜光电晶体管,存储电容器和薄膜开关晶体管,形成在绝缘层上的保护层; 以及形成在所述保护层上的导电物体检测图案,以在导电性物体接触所述导电性物体检测图案时向所述光源施加电力供应信号。

    Color filter panel of an LCD device
    57.
    发明授权
    Color filter panel of an LCD device 有权
    液晶显示装置的滤色片

    公开(公告)号:US6064454A

    公开(公告)日:2000-05-16

    申请号:US359645

    申请日:1999-07-26

    摘要: A device and method for manufacturing a high aperture ratio color filter panel of a liquid crystal display by reducing the resistance of the common electrode is disclosed. The method includes the steps of forming a black matrix array on a substrate, the black matrix array including a plurality of horizontal black matrix strips and a plurality of vertical black matrix strips, forming a plurality of color filters on the substrate, and the horizontal black matrix strips, so that portions of the horizontal black matrix strips are exposed, and forming a common electrode over the color filters.

    摘要翻译: 公开了一种通过降低公共电极的电阻来制造液晶显示器的高开口率滤色器面板的装置和方法。 该方法包括在基板上形成黑矩阵阵列的步骤,黑矩阵阵列包括多个水平黑矩阵条和多个垂直黑矩阵条,在基片上形成多个彩色滤光片,水平黑 矩阵条,使得水平黑矩阵条的部分被暴露,并且在滤色器上形成公共电极。

    Method of fabricating liquid crystal display device having alignment
direction determined
    58.
    发明授权
    Method of fabricating liquid crystal display device having alignment direction determined 失效
    制造具有取向方向的液晶显示装置的方法

    公开(公告)号:US5953584A

    公开(公告)日:1999-09-14

    申请号:US942197

    申请日:1997-10-01

    摘要: A method of fabricating a liquid crystal display device having a substrate includes the steps of forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode, forming a semiconductor layer on the gate insulating layer, forming source/drain electrodes on the semiconductor layer, forming a pixel electrode on the source/drain electrodes including the gate insulating layer, forming a passivation layer on the pixel electrode including the source/drain electrodes, forming a light shielding layer on the passivation layer, forming an alignment layer on the light shielding layer including the passivation layer, and determining an alignment direction by exposing the alignment layer to a light.

    摘要翻译: 一种制造具有基板的液晶显示装置的方法包括以下步骤:在基板上形成栅电极,在栅电极上形成栅极绝缘层,在栅极绝缘层上形成半导体层,形成源/漏电极 所述半导体层在包括所述栅极绝缘层的所述源极/漏极上形成像素电极,在包括所述源极/漏极的所述像素电极上形成钝化层,在所述钝化层上形成遮光层,在所述钝化层上形成取向层 所述遮光层包括所述钝化层,并且通过将所述取向层暴露于光来确定取向方向。

    Method for manfacturing a thin film transistor by using temperature
difference
    59.
    发明授权
    Method for manfacturing a thin film transistor by using temperature difference 失效
    通过使用温度差制造薄膜晶体管的方法

    公开(公告)号:US5851859A

    公开(公告)日:1998-12-22

    申请号:US812535

    申请日:1997-03-07

    申请人: Jeong Hyun Kim

    发明人: Jeong Hyun Kim

    IPC分类号: H01L21/336 H01L21/20

    摘要: The present invention is related to a method for manufacturing a thin film transistor which can improve the yield, characteristics and reliability of the thin film transistor by selectively forming a semiconductor layer on a desired portion using a of a substrate using a temperature difference of the surface of a substrate achieve by heating the substrate with a lamp. The method comprises the steps of forming a black matrix layer of metal on a portion of the whole surface of an insulating glass substrate, forming an insulating layer for protecting the substrate on the whole substrate including the black matrix layer, forming source/drain electrodes on the insulating layer over the black matrix, selectively forming a semiconductor layer on the insulating layer including the source/drain electrodes, forming a gate insulating layer and forming a gate electrode.

    摘要翻译: 本发明涉及一种制造薄膜晶体管的方法,该薄膜晶体管可以通过使用基板的温度差选择性地在所需部分上形成半导体层来提高薄膜晶体管的产量,特性和可靠性 通过用灯加热衬底来实现。 该方法包括以下步骤:在绝缘玻璃基板的整个表面的一部分上形成金属黑矩阵层,形成用于保护包括黑矩阵层的整个基板上的基板的绝缘层,形成源/漏电极 在黑矩阵上的绝缘层,在包括源极/漏极的绝缘层上选择性地形成半导体层,形成栅极绝缘层并形成栅电极。

    Method for forming semiconductor layer of thin film transistor by using
temperature difference
    60.
    发明授权
    Method for forming semiconductor layer of thin film transistor by using temperature difference 失效
    通过使用温度差形成薄膜晶体管的半导体层的方法

    公开(公告)号:US5686320A

    公开(公告)日:1997-11-11

    申请号:US375643

    申请日:1995-01-20

    申请人: Jeong Hyun Kim

    发明人: Jeong Hyun Kim

    IPC分类号: H01L21/336

    摘要: The present invention relates to a method for manufacturing a thin film transistor which can improve the yield, characteristics and reliability of the thin film transistor by selectively forming a semiconductor layer on a desired portion of a substrate using a temperature difference on the surface of the substrate achieved by heating the substrate with a lamp. The method comprises the steps of forming a black matrix layer of metal on a portion of the whole surface of an insulating glass substrate, forming an insulating layer for protecting the substrate on the whole substrate including the black matrix layer, forming source/drain electrodes on the insulating layer over the black matrix, selectively forming a semiconductor layer on the insulating layer including the source/drain electrodes, forming a gate insulating layer and forming a gate electrode.

    摘要翻译: 薄膜晶体管的制造方法技术领域本发明涉及一种薄膜晶体管的制造方法,该薄膜晶体管可以通过使用基板表面上的温度差选择性地在基板的所需部分上形成半导体层来提高薄膜晶体管的产量,特性和可靠性 通过用灯加热衬底来实现。 该方法包括以下步骤:在绝缘玻璃基板的整个表面的一部分上形成金属黑矩阵层,形成用于保护包括黑矩阵层的整个基板上的基板的绝缘层,形成源/漏电极 在黑矩阵上的绝缘层,在包括源极/漏极的绝缘层上选择性地形成半导体层,形成栅极绝缘层并形成栅电极。