摘要:
A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (C) a resin having at least one repeating unit selected from fluorine atom-containing repeating units represented by the following formulae (1-1), (1-2) and (1-3), the resin being stable to an acid and insoluble in an alkali developer, and (D) a solvent: wherein R1 represents a hydrogen atom or an alkyl group; R2 represents a fluoroalkyl group; R3 represents a hydrogen atom or a monovalent organic group; R4 to R7 each independently represents a hydrogen atom, a fluorine atom, an alkyl group, a fluoroalkyl group, an alkoxy group or a fluoroalkoxy group, provided that at least one of R4 to R7 represents a fluorine atom, and R4 and R5, or R6 and R7 may combine to form a ring; R8 represents a hydrogen atom, a fluorine atom or a monovalent organic group; Rf represents a fluorine atom or a fluorine atom-containing monovalent organic group; L represents a single bond or a divalent linking group; Q represents an alicyclic structure; and k represents an integer of 0 to 3.
摘要翻译:正型抗蚀剂组合物包括:(A)在酸性作用下在碱性显影剂中的溶解度增加的树脂,(B)在用光化射线或辐射照射时能够产生酸的化合物,(C)具有 选自由下式(1-1),(1-2)和(1-3)表示的含氟原子的重复单元中的至少一种重复单元,该树脂对酸稳定且不溶于碱性显影剂, 和(D)溶剂:其中R 1表示氢原子或烷基; R 2表示氟代烷基; R 3表示氢原子或一价有机基团; R 4至R 7各自独立地表示氢原子,氟原子,烷基,氟烷基,烷氧基或氟烷氧基,条件是至少 R 4至R 7中的一个表示氟原子,R 4和R 5,或R 5, SUB> 6和R 7可以结合形成环; R 8表示氢原子,氟原子或一价有机基团; Rf表示氟原子或含氟原子的一价有机基团; L表示单键或二价连接基团; Q表示脂环结构; k表示0〜3的整数。
摘要:
A positive resist composition comprises (A) a resin which comprises a specified repeating units and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation.
摘要:
A positive resist composition is disclosed, comprising (A) a resin containing at least one repeating unit represented by the following formula (I) and at least one repeating unit represented by formula (VII), which decomposes under the action of an acid to increase the solubility in an alkali developer, and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation.
摘要:
A positive resist composition comprising (A) a compound generating a specific sulfonimide compound by irradiation with an actinic ray or a radiation and (B) a resin having a group, which is decomposed by the action of an acid to increase the solubility of the composition in an alkali developer. The resist composition has an improved resolving power and an improved process allowance such as exposure margin and the depth of focus in a lithographic technique using a light source of short wavelengths capable of super fine working and a positive chemically amplified resist.
摘要:
A method of producing a color filter includes (a) forming a colored pattern on a substrate by exposing and developing a colored curable composition containing a dye, a polymerizable monomer and an organic solvent, (b) forming a transparent protective film on the colored pattern, and (c) irradiating at least the transparent protective film with light after forming the transparent protective film on the colored pattern.
摘要:
A photosensitive resin composition which can form a pattern attaining high resolution and having a high refractive index and a high transmittance is provided. The photosensitive resin composition includes a dispersion composition including (A) titanium dioxide particles having an average primary particle diameter of from 1 nm to 100 nm, (B) a graft copolymer that has a graft chain having a number of atoms other than hydrogen atoms in a range of from 40 to 10,000 and (C) a solvent, and (D) a polymerizable compound, and (E) a polymerization initiator.
摘要:
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
摘要:
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
摘要:
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
摘要:
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.